Ordering number:ENN6399 P-Channel Silicon MOSFET FSS134 DC/DC Converter Applications Features Package Dimensions · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS134] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Conditions Ratings Unit VDSS VGSS –30 V ±20 V ID –9 A Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% –52 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2×0.8mm) 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS ID=–1mA, VGS=0 VGS=±16V, VDS=0 | yfs | VDS=–10V, ID=–9A ID=–9A, VGS=–10V RDS(on)2 RDS(on)3 Ratings min typ max –30 VDS=–10V, ID=–1mA Unit V VDS=–30V, VGS=0 IGSS VGS(off) RDS(on)1 Static Drain-to-Source On-State Resistance Conditions –1.0 11 –1 µA ±10 µA –2.4 V 17 16 S 21 mΩ ID=–4A, VGS=–4.5V 24 34 mΩ ID=–4A, VGS=–4V 26 37 mΩ Marking : S134 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2274 No.6399-1/4 FSS134 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=–10V, f=1MHz 2300 pF Output Capacitance Coss 520 pF Reverse Transfer Capacitance Crss VDS=–10V, f=1MHz VDS=–10V, f=1MHz 320 pF Turn-ON Delay Time td(on) See specified Test Circuit 17 ns tr See specified Test Circuit 220 ns td(off) See specified Test Circuit 160 ns tf See specified Test Circuit 130 ns Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=–10V, VGS=–10V, ID=–9A 45 nC VDS=–10V, VGS=–10V, ID=–9A VDS=–10V, VGS=–10V, ID=–9A IS=–9A, VGS=0 6 nC 7 Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD nC –0.8 –1.5 V Switching Time Test Circuit VDD=--15V VIN 0V --10V ID=--9A RL=1.67Ω VIN D VOUT PW=10µs D.C.≤1% G P.G FSS134 50Ω S --7 .5V --3 ID -- VGS --16 VDS=--10V .0V --3 --14 --12 Drain Current, ID – A --10 --5 --4 --3 --8 --6 --4 --2 --2.0V --1 Ta= 7 --2 0 0 0 --0.1 --0.2 --0.3 --0.4 Drain-to-Source Voltage, VDS – V 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS – V IT00403 RDS(on) -- VGS 50 --0.5 25°C --2.5V 5°C --6 --2 5°C Drain Current, ID – A --8 --4 . 0V --6. 0V --4 .5V VG S=--1 0. --9 0V ID -- VDS --10 --3.0 IT00404 RDS(on) -- Ta 60 Ta=25°C Static Drain-to-Source On-State Resistance, RDS (on) – mΩ Static Drain-to-Source On-State Resistance, RDS (on) – mΩ --9A 40 ID=--4A 30 20 10 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS – V --18 --20 IT00405 50 40 V --4.0 S= VG , -4A I D=5V =--4. , VGS A 4 I D= --10.0V , V GS= I D=--9A 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta – ˚C 120 140 160 IT00406 No.6399-2/4 FSS134 yfs -- ID VDS=--10V 7 5 3 2 °C --25 Ta= 10 7 5 °C 25 C 75° 3 2 1.0 7 5 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --1.0 2 3 5 7 --10 2 3 0 Gate-to-Source Voltage, VGS – V 2 1000 7 Coss 5 3 Crss 2 --0.8 --1.0 --1.2 IT00408 VDS=--10V ID=--9A --9 Ciss --0.6 VGS -- Qg --10 7 5 --0.4 Diode Forward Voltage, VSD – V f=1MHz 3 --0.2 IT00407 Ciss, Coss, Crss -- VDS 10000 Ta= 75° C 25°C --25° C 2 Drain Current, ID – A Ciss, Coss, Crss – pF VGS=0 --0.01 7 5 3 2 --0.001 3 0.1 --0.1 IF -- VSD --100 7 5 3 2 Forward Current, IF – A Forward Transfer Admittance, | yfs | – S 100 --8 --7 --6 --5 --4 --3 --2 --1 100 0 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS – V VDD=--15V VGS=--10V 5 3 td(off) 2 tf 100 5 tr td(on) 2 3 5 --10 7 5 3 2 --0.1 7 5 3 2 3 10 --0.1 --100 7 5 3 2 --1.0 7 5 3 2 7 2 7 --1.0 2 3 5 10 7 --10 2 Drain Current, ID – A 3 IT00411 15 20 25 30 35 40 Total Gate Charge, Qg – nC Drain Current, ID – A Switching Time, SW Time – ns 7 5 IT00409 SW Time -- ID 1000 0 --30 45 IT00410 ASO IDP=--52A <10µs 100µs 1m ID=--9A 10 10 0m s m s s DC op era Operation in this tio area is limited by RDS(on). n Ta=25°C Single pulse Mounted on a ceramic board (1000mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS – V 2 3 5 7 --100 IT00412 PD -- Ta Allowable Power Dissipation, PD – W 2.5 2.0 M ou nt 1.5 ed on ac er am ic bo ar 1.0 d( 10 00 m m2 ×0 .8m 0.5 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT00413 No.6399-3/4 FSS134 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6399-4/4