Ordering number:ENN6267 N-Channel Silicon MOSFET FTD2014 Load Switching Applications Package Dimensions · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2014] 3.0 0.65 0.425 5 4.5 6.4 0.5 8 0.95 Features 4 0.125 1.0 0.25 (0.95) 1 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 0.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 20 V ±10 V 4 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 20 A Allowable Power Dissipation Mounted on a ceramic board (1000mm2×0.8mm) 1unit 0.8 W Total Dissipation PD PT 1.3 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS Conditions ID=1mA, VGS=0 Ratings min typ Unit max 20 V VDS=20V, VGS=0 1 µA ±10 µA 1.3 V IGSS VGS(off) | yfs | VGS=±8V, VDS=0 RDS(on)1 ID=4A, VGS=4V ID=2A, VGS=2.5V 32 42 mΩ 42 59 mΩ 700 pF 200 pF 150 pF RDS(on)2 VDS=10V, ID=1mA VDS=10V, ID=4A Input Capacitance Ciss Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 0.4 7 Marking : D2014 10 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2166 No.6267–1/4 FTD2014 Continued from preceding page. Parameter Symbol Turn-ON Delay Time min typ Unit max td(on) See Specified Test Circuit 14 ns tr See Specified Test Circuit 130 ns td(off) See Specified Test Circuit 83 ns tf See Specified Test Circuit 110 ns 24 nC 1.4 nC Rise Time Turn-OFF Delay Time Ratings Conditions Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=10V, VGS=10V, ID=4A 3.2 IS=4A, VGS=0 Switching Time Test Circuit nC 0.85 1.2 V Electrical Connection VDD=10V D2 S2 S2 G2 VIN 4V 0V ID=4A RL=2.5Ω VIN D VOUT PW=10µs D.C.≤1% G P.G FTD2014 50Ω D1 S1 S1 G1 (Top view) S ID -- VDS VDS=10V 2.0V 10 6 1.5V 4 8 6 4 °C 25 2 --2 5 2 °C 8 Ta= 75° C Drain Current, ID – A Drain Current, ID – A 10 ID -- VGS 12 Ta=25°C 3.0V 2.5V 3.5V 4.0V 12 VGS=1.0V 0 0 0 0.5 1.0 1.5 2.0 2.5 Drain-to-Source Voltage, VDS – V 0 3.0 0.6 0.4 0.8 1.0 1.2 1.6 1.4 Gate-to-Source Voltage, VGS – V RDS(on) -- VGS 90 0.2 IT00425 1.8 2.0 IT00426 RDS(on) -- Ta 60 80 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Ta=25°C 70 4A 60 ID=2A 50 40 30 20 10 0 0 2 4 6 8 Gate-to-Source Voltage, VGS – V 10 IT00427 V =2.5 , VGS 50 A I D=2 =4.0V , V GS I D=4A 40 30 20 10 0 --50 --25 0 25 50 75 100 Ambient Temperature, Ta – °C 125 150 IT00428 No.6267-2/4 FTD2014 | yf s | - ID VDS=10V 7 5 7 5 C 75° 3 2 1.0 0.1 0.001 2 3 5 7 2 1.0 3 5 Drain Current, ID – A 10 IT00429 Gate-to-Source Voltage, VGS – V 3 2 Ciss 3 Coss 2 Crss 100 7 5 3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00430 VGS -- Qg VDS=10V ID=4A 8 7 6 5 4 3 2 1 2 0 0 10 2 4 6 8 10 12 14 16 20 18 Drain-to-Source Voltage, VDS – V tf td(off) 100 7 5 3 2 tr td(on) 10 7 5 3 2 1.0 0.1 100 7 5 3 2 VDD=10V VGS=4V 3 2 2 3 5 7 2 1.0 3 Drain Current, ID – A 5 7 10 IT00433 10 15 20 25 Total Gate Charge, Qg – nC SW Time -- ID 1000 7 5 5 IT00431 Drain Current, ID – A 0 Switching Time, SW Time – ns 0.4 10 9 1000 7 5 0.3 Diode Forward Voltage, VSD – V f=1MHz 7 5 Ciss, Coss, Crss – pF 0.2 7 Ciss, Coss, Crss -- VDS 10000 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT00432 ASO <100µs IDP 1m s ID 10 ms 10 DC 0m s op er ati Operation in this on area is limited by RDS(on) Ta= 25˚C 1 pulse, 1 unit Mounted on a ceramic board (1000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS – V 5 7 100 IT00434 PD -- Ta 1.4 Allowable Power Dissipation, PD – W 75 °C 25° C --25 °C °C --25 Ta= C 25° VGS=0 Ta = 3 2 10 IF -- VSD 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 Forward Current, IF – A Forward Transfer Admittance, | yfs | – S 100 Mounted on a ceramic board (1000mm2×0.8mm) 1.2 1.0 To 0.8 ta lD iss ip 1u 0.6 nit at io n 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT00435 No.6267-3/4 FTD2014 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. PS No.6267-4/4