Ordering number:ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Package Dimensions · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2017] 3.0 0.65 0.425 5 4.5 6.4 0.5 8 0.95 Features 4 1.0 0.25 (0.95) 1 1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 0.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 20 V ±10 V 5 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 20 A Allowable Power Dissipation Mounted on a ceramic board (1000mm2×0.8mm) 1unit 0.8 W Total Dissipation PD PT 1.3 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS ID=1mA, VGS=0 VDS=20V, VGS=0 IGSS VGS(off) VGS=±8V, VDS=0 VDS=10V, ID=1mA | yfs | Static Drain-to-Source On-State Resistance Conditions RDS(on)1 RDS(on)2 VDS=10V, ID=5A ID=5A, VGS=4V Ratings min typ Unit max 20 V 1 µA ±10 µA 1.3 V 17 23 mΩ 20 29 mΩ 0.4 11.2 16 S Input Capacitance Ciss ID=2A, VGS=2.5V VDS=10V, f=1MHz 1500 pF Output Capacitance Coss VDS=10V, f=1MHz 350 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 230 pF Marking : D2017 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2502 No.6361–1/4 FTD2017 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Ratings Conditions min typ Unit max td(on) See Specified Test Circuit 19 ns tr See Specified Test Circuit 190 ns td(off) See Specified Test Circuit 90 ns tf See Specified Test Circuit 160 ns 42 nC 4 nC Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=5A Diode Forward Voltage VSD 8 IS=5A, VGS=0 Switching Time Test Circuit nC 0.8 1.2 V Electrical Connection VDD=10V 4V 0V VIN PW=10µs D.C.≤1% D2 S2 S2 G2 ID=5A RL=2Ω VIN D VOUT G P.G 50Ω FTD2017 S D1 S1 S1 G1 ID -- VDS 10 3.5V 3.0V 9 9 4 3 5 4 3 --2 5 2 1 1 VGS=1.0V 25°C 5 6 °C 6 7 5°C 1.5V Ta= 7 7 Drain Current, ID – A 2.0V 8 2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS – V 0.9 0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS – V IT00922 RDS(on) -- VGS 60 1.8 2.0 IT00923 RDS(on) -- Ta 50 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Static Drain-to-Source On-State Resistance, RDS(on) – mΩ ID -- VGS VDS=10V 2.5V 4.0V Drain Current, ID – A 8 10 50 40 30 ID=2A 5A 20 10 0 0 2 4 6 8 Gate-to-Source Voltage, VGS – V 10 12 IT00924 40 30 2.5V S= A, VG I D=2 20 =4.0V , V GS I D=5A 10 0 --50 --25 0 25 50 75 100 Ambient Temperature, Ta – °C 125 150 IT00925 No.6361-2/4 yfs -- ID 5°C --2 1.0 7 5 3 2 C 25° = Ta 75 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 2 3 °C 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID – A 0.4 0.5 0.6 0.7 0.8 0.9 tf 3 td(on) 2 1.0 10 7 5 1.1 1.2 IT00927 Ciss, Coss, Crss -- VDS f=1MHz 3 2 Ciss, Coss, Crss – pF Switching Time, SW Time – ns tr td(off) Ciss 1000 3 7 5 Coss 3 2 Crss 100 7 5 3 2 10 1.0 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID – A 7 0 10 100 7 5 3 2 Drain Current, ID – A 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 Total Gate Charge, Qg – nC 40 45 IT00930 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS – V VDS=10V ID=5A 9 2 IT00928 VGS -- Qg 10 Gate-to-Source Voltage, VGS – V 0.3 7 5 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 18 20 IT00929 ASO IDP=20A <10µs ID=5A 10 10 m s DC 1m s 0m s op era tio Operation in this n area is limited by RDS(on). Ta= 25°C Single pulse 0.01 Mounted on a ceramic board (1000mm ×0.8mm) 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS – V IT00931 2 PD -- Ta 1.5 Allowable Power Dissipation, PD – W 0.01 7 5 3 2 Diode Forward Voltage, VSD – V 3 100 7 5 0.1 7 5 3 2 10000 VDD=10V VGS=4V 2 1.0 7 5 3 2 0.001 0.2 5 7 10 IT00926 SW Time -- ID 1000 7 5 VGS = 0 25° C --25 °C 10 7 5 3 2 IF -- VSD 10 7 5 3 2 VDS=10V Ta= 75° C 100 7 5 3 2 Forward Current, IF – A Forward Transfer Admittance, | yfs | – S FTD2017 Mounted on a ceramic board (1000mm2×0.8mm) 1.3 1.0 To tal 0.8 Di ss 1u nit 0.5 ip ati on 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT00932 No.6361-3/4 FTD2017 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. PS No.6361-4/4