Fairchild FYP1010DN Schottky barrier rectifier Datasheet

FYP1010DN
Schottky Barrier Rectifier
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
1.Anode
3.Anode
2. Cathode
1
TO220 (None Jedec type)
Absolute Maximum Ratings
Symbol
*TC=25°C unless otherwise noted
Parameter
VRRM
Maximum Repetitive Reverse Voltage
VR
Maximum DC Reverse Voltage
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
TJ, TSTG
Operating Junction and Storage Temperature
@ TC = 135°C
Value
Units
100
V
100
V
10
A
100
A
-65 to +150
°C
Value
Units
2.5
°C/W
Value
Units
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics (per diode)
Symbol
VFM *
IRM *
Parameter
Maximum Instantaneous Forward Voltage
IF = 5A
IF = 5A
IF = 10A
IF = 10A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
0.75
0.65
0.95
0.73
V
Maximum Instantaneous Reverse Current
@ rated VR
TC = 25 °C
TC = 125 °C
1
30
mA
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
©2007 Fairchild Semiconductor Corporation
FYP1010DN Rev. C
1
www.fairchildsemi.com
FYP1010DN
June 2007
Typical Performance Characteristics
2
Rev. C
www.fairchildsemi.com
Package Dimensions
TO-220
Dimensions in Millimeters
3
Rev. C
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tm
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Rev. I23
4
Rev. C
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