FYP2010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection 1.Anode 3.Anode 1 2 3 2. Cathode TO-220 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VRRM VR Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave TJ, TSTG @ TC = 120°C Operating Junction and Storage Temperature Value Units 100 V 100 V 20 A 150 A -65 to +150 °C Value Units 1.7 °C/W Value Units Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Electrical Characteristics (per diode) Symbol VFM * IRM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.77 0.65 0.75 Maximum Instantaneous Reverse Current @ rated VR TC = 25 °C TC = 125 °C 0.1 20 V mA * Pulse Test: Pulse Width=300μs, Duty Cycle=2% © 2009 Fairchild Semiconductor Corporation FYP2010DN Rev. B1 www.fairchildsemi.com 1 FYP2010DN — Schottky Barrier Rectifier August 2009 10 Reverse Current, IR[mA] Forward Current, I F[A] 100 10 1 o TJ=125 C o 0.1 TJ=75 C o T J=125 C 1 o TJ=75 C 0.1 0.01 o T J=25 C o TJ=25 C 1E-3 0.01 0.0 0.5 1.0 20 1.5 40 Forward Voltage Drop, VF[V] 60 80 100 Reverse Voltage, VR[V] Figure 1. Typical Forward Voltage Characteristics (per diode) Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode) Transient Thermal Impedance [ C/W] 10 1000 900 800 700 600 500 o Juntion Capacitance, C J[pF] o TJ=25 C 400 300 200 100 90 80 0 20 40 60 80 100 1 100µ Reverse Voltage, VR[V] 100m 1 10 Figure 4. Thermal Impedance Characteristics (per diode) 25 250 Max. Forward Surge Current, I FSM[A] Average Forward Current, IF(AV)[A] 10m Pulse Duration [s] Figure 3. Typical Junction Capacitance (per diode) DC 20 15 10 5 0 0 20 40 60 80 100 120 140 160 200 150 100 50 0 1 o Case Temperature, T C [ C] 10 100 Number of Cycles @ 60Hz Figure 6. Non-Repetive Surge Current (per diode) Figure 5. Forward Current Derating Curve © 2009 Fairchild Semiconductor Corporation FYP2010DN Rev. B1 1m www.fairchildsemi.com 2 FYP2010DN — Schottky Barrier Rectifier Typical Performance Characteristics FYP2010DN — Schottky Barrier Rectifier Physical Dimensions TO-220 © 2009 Fairchild Semiconductor Corporation FYP2010DN Rev. B1 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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