ETC2 FZT792ATA Sot223 pnp silicon planar high gain medium power transistor Datasheet

SOT223 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
FZT792A
ISSUE 3 - NOVEMBER 1995
FEATURES
* High gain and Very low saturation voltage
C
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE PARTMARKING DETAIL -
E
C
FZT692B
FZT792A
B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-75
V
Collector-Emitter Voltage
VCEO
-70
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-5
A
Continuous Collector Current
IC
-2
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Breakdown Voltages
V(BR)CBO
-75
-100
V
IC=-100µ A
V(BR)CEO
-70
-90
V
IC=-10mA*
V(BR)EBO
-5
-8.5
V
IE=-100µ A
Cut-Off Currents
Saturation Voltages
MAX. UNIT
CONDITIONS.
ICBO
-0.1
-10
µA
µA
VCB=-40V
VCB=-40V,
Tamb=100°C
IEBO
-0.1
µA
VEB=-4V
VCE(sat)
-0.30
-0.30
-0.30
-0.45
-0.50
-0.50
V
V
V
IC=-500mA, IB=-5mA*
IC=-1A, IB=-25mA*
IC=-2A, IB=-200mA*
VBE(sat)
-0.80
-0.95
V
IC=-1A, IB=-25mA*
3 - 250
FZT792A
FZT792A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.8
IC=-1A, VCE=-2V*
1.6
- (Volts)
MHz
IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Cibo
225
pF
VEB=0.5V, f=1MHz
Output Capacitance
Cobo
22
pF
VCB=-10V, f=1MHz
Switching Times
ton
toff
35
750
ns
ns
IC=-500mA,
IB1=-50mA,
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
0.6
1.6
0.01
0.1
1
0
0.1
1
10
VCE(sat) v IC
+100°C
+25°C
-55°C
VCE=2V
500
250
-55°C
+25°C
+100°C
+175°C
1.6
750
0.4
0.2
1.4
IC/IB=40
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.6
0.01
VCE(sat) v IC
0.6
1.4
0.4
IC - Collector Current (Amps)
0.8
1.2
0.8
IC - Collector Current (Amps)
1.0
1.6
1.0
0.2
0
10
1.4
1.2
1.4
1.2
IC/IB=100
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
1.6
1.0
- Normalised Gain
160
1.8
Tamb=25°C
0.8
h
100
IC/IB=40
IC/IB=20
IC/IB=10
1.2
- (Volts)
fT
IC=-10mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
V
1.4
800
300
250
200
V
Transition Frequency
V
- (Volts)
hFE
-0.75
CONDITIONS.
V
Static Forward
Current Transfer
TYPICAL CHARACTERISTICS
MAX. UNIT
- (Volts)
VBE(on)
TYP.
V
Base-Emitter
Turn-On Voltage
MIN.
- Typical Gain
SYMBOL
h
PARAMETER
0.1
10
1
0
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
10
10
VCE=2V
1
1.0
0.8
0.1
0.4
DC
1s
100ms
10ms
1ms
100µs
0.2
0
0.01
0.1
1
10
IC - Collector Current (Amps)
0.1
1
V
CE
10
- Collector Emitter Voltage (V)
Safe Operating Area
VBE(on) v IC
3 - 251
0.01
3 - 252
100
FZT792A
FZT792A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.8
IC=-1A, VCE=-2V*
1.6
- (Volts)
MHz
IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Cibo
225
pF
VEB=0.5V, f=1MHz
Output Capacitance
Cobo
22
pF
VCB=-10V, f=1MHz
Switching Times
ton
toff
35
750
ns
ns
IC=-500mA,
IB1=-50mA,
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
0.6
1.6
0.01
0.1
1
0
0.1
1
10
VCE(sat) v IC
+100°C
+25°C
-55°C
VCE=2V
500
250
-55°C
+25°C
+100°C
+175°C
1.6
750
0.4
0.2
1.4
IC/IB=40
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.6
0.01
VCE(sat) v IC
0.6
1.4
0.4
IC - Collector Current (Amps)
0.8
1.2
0.8
IC - Collector Current (Amps)
1.0
1.6
1.0
0.2
0
10
1.4
1.2
1.4
1.2
IC/IB=100
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
1.6
1.0
- Normalised Gain
160
1.8
Tamb=25°C
0.8
h
100
IC/IB=40
IC/IB=20
IC/IB=10
1.2
- (Volts)
fT
IC=-10mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
V
1.4
800
300
250
200
V
Transition Frequency
V
- (Volts)
hFE
-0.75
CONDITIONS.
V
Static Forward
Current Transfer
TYPICAL CHARACTERISTICS
MAX. UNIT
- (Volts)
VBE(on)
TYP.
V
Base-Emitter
Turn-On Voltage
MIN.
- Typical Gain
SYMBOL
h
PARAMETER
0.1
10
1
0
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
10
10
VCE=2V
1
1.0
0.8
0.1
0.4
DC
1s
100ms
10ms
1ms
100µs
0.2
0
0.01
0.1
1
10
IC - Collector Current (Amps)
0.1
1
V
CE
10
- Collector Emitter Voltage (V)
Safe Operating Area
VBE(on) v IC
3 - 251
0.01
3 - 252
100
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