Pb Free Plating Product CORPORATION G6402 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID -20V 65m -4.2A Description The G6402 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G6402 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features Ultra Low RDS(ON) Fast Switching Applications Power Management in Notebook Computer Portable Equipment Battery Powered System. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings -20 12 -4.2 -3.4 -10 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 Min. BVDSS Typ. Max. -20 - - - -0.1 - Unit V V/ Test Conditions VGS=0, ID=-250uA Reference to 25 -0.5 - - V VDS= VGS, ID=-250uA gfs - 9 - S VDS=-5.0V, ID=-2.8A - - 100 nA VGS= - - -1 uA VDS=-20V, VGS=0 - - -10 uA VDS=-16V, VGS=0 IDSS RDS(ON) - - 65 - - 135 m 12V VGS=-4.5V, ID=-3.7A VGS=-2.5V, ID=-3.1A Total Gate Charge Qg - 10.6 - Gate-Source Charge Qgs - 2.32 - Qgd - 3.68 - VGS=-4.5V Td(on) - 5.9 ns VDS=-15V ID=-4.2A, VGS=-10V RG=6 RD=3.6 pF VGS=0V VDS=-15V f=1.0MHz Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time , ID=-1mA VGS(th) IGSS Drain-Source Leakage Current(Tj=25 Unless otherwise specified) Symbol BVDSS/ Tj Breakdown Voltage Temperature Coefficient ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Tr - 3.6 - Td(off) - 32.4 - Tf - 2.6 - Input Capacitance Ciss - 740 - Output Capacitance Coss - 167 - Reverse Transfer Capacitance Crss - 126 - ID=-4.2A nC VDS=-16V Source-Drain Diode Forward On Voltage2 VSD - - -1.2 V IS=-1.2A, VGS =0 Tj=25 Reverse Recovery Time Trr - 27.7 - ns Reverse Recovery Charge Qrr - 22 - nC IS=-4.2A,VGS=0 dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270 /w when mounted on min. copper pad. Characteristics Curve 2/4 CORPORATION ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B 3/4 CORPORATION ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4