IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared (0.9 to 1.7 um) image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low cost is also achieved by using inexpensive ceramic packages. Feedback capacitance for the signal processing circuit formed on the CMOS chip can be selected from 10 pF or 0.5 pF by external voltage. Features Applications l Element pitch l Near infrared spectroscopy l Foreign matter detection monitors l DWDM monitors G9203-256D: 50 µm G9204-512D: 25 µm l CMOS readout l Low dark current l Room temperature operation l Selectable feedback capacitance (Cf): 10 pF or 0.5 pF ■ Selection guide Type No. G9203-256D G9204-512D Cooling Non-cooled Number of pixels 256 512 Pixel pitch (µm) Pixel size [µm (H) × µm (V)] Spectral response range (µm) Defective pixel 50 25 50 × 500 25 × 500 0.9 to 1.7 (25 °C) 0 ■ Absolute maximum ratings Parameter Clock pulse voltage Operating temperature * Storage temperature * * Non condensation Symbol Vφmax. Topr Tstg Value 5.5 -40 to +70 -40 to +85 Unit V °C °C ■ Electrical characteristics (Ta=25°C) Parameter Supply voltage Supply voltage Ground Element bias Clock frequency Clock pulse voltage Symbol Vdd Vref Vss INP f High Low Clock pulse rise/fall times Clock pulse width Reset pulse voltage High Low Reset pulse rise/fall times Reset pulse width Video output voltage Date rate High Low Vφ trφ tfφ tpwφ V (RES) tr (RES) tr (RES) tpw (RES) VH VL fV Min. 4.9 4.4 0.01 4.5 - Typ. 5.0 1.26 0 4.5 5.0 - Max. 5.1 4.6 4 5.5 0.4 Unit V V V V MHz 0 20 100 ns 200 4.5 - 5.0 - 5.5 0.4 ns 0 20 100 ns 6000 - 4.4 1.26 f/8 INP - ns V V V Hz 1 InGaAs linear image sensor G9203-256D, G9204-512D ■ Specification (Ta=25 °C, Vdd=5 V, INP=4.5 V, Vref=1.26 V, Cf=10 pF, per 1 element) Parameter Peak sensitivity wavelength Saturation charge 256 ch Dark current 512 ch Symbol λp Qsat Condition Vφ=5 V ID RMS noise voltage (readout noise) Standard deviation Number of integration: 50 N Saturation voltage Photo response non uniformity Defective pixels Vsat PRNU - Integration time: 10 ms Min. - Typ. 1.55 30 4 1 Max. 20 5 Unit µm pC - 180 300 µVrms 3.0 - 3.2 - ±5 0 V % pixel ■ Equivalent circuit 1 PIXEL Cf=10 pF Cf=0.5 pF SHIFT REGISTER OFFSET COMPENSATION CDS VIDEO PHOTODIODE AD-TRIG TIMING GENERATOR Vdd INP Vss CLK RESET Vref EXTERNAL INPUT KMIRC0010EB ■ Basic circuit connection CLK RESET BUFFER AMP Vref VIDEO Vdd Cf SELECT AD-TRIG INP BUFFER AMP Vss KMIRC0012EA ■ Timing chart CLK (INPUT) RESET (INPUT) INTEGRATION 2 CLOCKS TIME 8 CLOCKS 8 CLOCKS 8 × N CLOCKS (READOUT TIME) 10 CLOCKS MIN. TRIGGER (OUTPUT) VIDEO (OUTPUT) 1 ch 2 ch (n-1) ch n ch KMIRC0016EB 2 pA InGaAs linear image sensor ■ Spectral response G9203-256D, G9204-512D ■ Photo sensitivity temperature characteristics (Typ. T=25 ˚C) 1.0 (Typ.) 120 RELATIVE SENSITIVITY (%) PHOTO SENSITIVITY (A/W) 70 ˚C 0.5 0 0.5 30 ˚C 80 -10 ˚C 60 40 20 0 1.52 2.0 1.5 1.0 100 1.56 1.54 WAVELENGTH (µm) 1.60 1.58 1.64 1.62 WAVELENGTH (µm) KMIRB0019EA ■ Noise vs. temperature 0.5 KMIRB0020EA ■ Dark current vs. temperature (Typ. date rate: 250 kHz, Cf=10 pF, integration time: 10 ms, number of integrations: 50) (Typ.) 100 pA 0.4 G9203-256D DARK CURRENT NOISE (mVrms) 10 pA 0.3 0.2 1 pA G9204-512D 100 fA 0.1 0 -20 -10 0 10 20 30 40 50 60 70 TEMPERATURE (˚C) 10 fA -20 -10 0 10 20 30 40 50 60 70 TEMPERATURE (˚C) KMIRB0017EA KMIRB0021EA 3 InGaAs linear image sensor G9203-256D, G9204-512D ■ Dimensional outlines (Unit: mm) G9203-256D ( , ) 3.0 ± 0.3 CMOS AMP 31.8 ± 0.3 1.70 ± 0.2 2.54 ± 0.1 10 11 4.0 ± 1.0 1 2 ACTIVE AREA 10.2 ± 0.3 2.1 ± 0.5 INDEX MARK 10.1 ± 0.3 13 12 22 21 0.51 ± 0.2 Pin No. 1 2 3 4 5 6 7 8 9 10 11 Function NC NC NC NC NC NC NC NC NC NC NC Pin No. 12 13 14 15 16 17 18 19 20 21 22 Function VIDEO Vref CLK NC INP Vss Vdd NC AD-TRIG RESET Cf-SELECT KMIRA0014EA G9204-512D 3.00 ± 0.3 CMOS AMP 31.8 ± 0.3 15.24 ± 0.3 13 12 15.1 ± 0.3 22 21 1.70 ± 0.2 INDEX MARK 2.54 ± 0.1 10 11 0.51 ± 0.2 4.0 ± 1.0 1 2 ACTIVE AREA Pin No. 1 2 3 4 5 6 7 8 9 10 11 Pin No. Function 12 NC 13 RESET-EVEN 14 AD-TRIG-EVEN 15 NC 16 NC 17 NC 18 NC 19 NC 20 CLK-EVEN 21 NC 22 VIDEO-EVEN Function VIDEO-ODD Vref CLK-ODD NC INP Vss Vdd NC AD-TRIG-ODD RESET-ODD Cf-SELECT KMIRA0013EB 4 InGaAs linear image sensor G9203-256D, G9204-512D ■ Pin connection Terminal name CLK Input/Output Input (CMOS logic) RESET Input (CMOS logic) Vdd Vss INP Input Input Cf SELECT Input Vref AD-TRIG VIDEO Input Output Output Function and recommended connection Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed on the CMOS chip. The width of the reset pulse determines integration time S u pply voltag e fo r o pe rating the sig nal p rocessin g circuit o n the C M O S chip . Ground for the signal processing circuit on the CMOS chip. Reset voltage for the charge amplifier array on the CMOS chip. Voltage that determines the feedback capacitance (Cf) on the CMOS chip. Cf=10 pF at 0 V, and Cf=0.5 pF at 5 V. Reset voltage for the offset compensating circuit on the CMOS chip. Digital signal for AD conversion; positive polarity Analog video signal; positive polarity Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMIR1013E02 Dec. 2004 DN 5