Hamamatsu G9494-512D Ingaas linear image sensor Datasheet

IMAGE SENSOR
InGaAs linear image sensor
G9494-256D/-512D
Near infrared image sensor (0.9 to 1.7 µm) with high-speed data rate
HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These
image sensors use square-shaped pixels that are ideally suited for software processing in pattern recognition systems.
The signal processing circuit employs CTIA (Capacitive Transfer Impedance Amplifier) method to perform simultaneous charge integration on all pixels,
so there is no time lag among the pixel output signals.
Features
Applications
l High-speed data rate: 2 MHz Typ.
l Selectable conversion gain (Cf=0.1 pF, 1 pF)
l Pixel size
l Foreign object detection monitors
l Near infrared spectroscopy
G9494-256D: 50 × 50 µm
G9494-512D: 25 × 25 µm
l CMOS readout circuit incorporated
l Low dark current
l Room temperature operation
■ S e le c t io n g u id e
Typ e N o .
G 9 4 9 4 -2 5 6 D
G 9 4 9 4 -5 1 2 D
C o o lin g
N um ber of
p ix e ls
P ix e l p itc h
(µ m )
N o n - c o o le d
256
512
50
25
P ix e l s iz e
[µ m (H ) × µ m
( V )]
50 × 50
25 × 25
S p e c tra l re s p o n s e ra n g e
(µ m )
D e fe c tiv e p ix e l
0 .9 to 1 .7 (2 5 ° C )
L e s s th a n 1 %
■ A b s o lu te m a x im u m r a tin g s
P a ra m e te r
S u p p ly v o lta g e
C lo c k p u ls e v o lta g e
R e s e t p u ls e v o lta g e
G a in s e le c tio n te rm in a l v o lta g e
O p e ra tin g te m p e ra tu r e * 1
S to ra g e te m p e ra tu r e * 1
* 1 : N o c o n d e n s a tio n
S ym bol
Vdd
Vφ
V (R E S )
V c fS E L
To p r
Ts tg
V a lu e
-0 .3 to + 6
-0 .3 to + 6
-0 .3 to + 6
-0 .3 to + 6
-2 0 to + 7 0
-2 0 to + 8 5
U n it
V
V
V
V
°C
°C
■ E le c tr ic a l c h a r a c te r is tic s ( Ta = 2 5 ° C )
P a ra m e te r
G 9 4 9 4 -2 5 6 D
G 9 4 9 4 -5 1 2 D
S u p p ly v o lta g e
G 9 4 9 4 -2 5 6 D
S u p p ly c u rr e n t
G 9 4 9 4 -5 1 2 D
S u p p ly v o lta g e
G ro u n d
E le m e n t b ia s
C lo c k fr e q u e n c y
C lo c k p u ls e v o lta g e
H ig h
Low
V re f
IV d d
R e s e t p u ls e v o lta g e
H ig h
Low
V (R E S )
H ig h
Low
tr ( R E S ), tf
(R E S )
tp w ( R E S )
VH
VL
Zv
H ig h
V trig
Low
R e s e t p u ls e ris e / fa ll tim e s
2
V id e o o u tp u t v o lta g e
V id e o o u tp u t im p e d a n c e
A /D tr ig g e r v o lta g e
A /D tr ig g e r d r iv e fu n c tio n
Vφ
tr φ , tf φ
tp w φ
C lo c k p u ls e ris e / fa ll tim e s
C lo c k p u ls e w id th
D a ta r a te
*2 : 6 µ s o r m o re
Vdd
IV re f
I IN P
Vss
IN P
f
S u p p ly c u r re n t
R e s e t p u ls e w id th *
S ym bol
Va d
fv
M in .
4 .5
4 .5
3 .3
0 .1
4 .5
0
100
4 .5
-
Typ .
5 .0
5 .0
1 .2 6
40
80
0
3 .5
2
5 .0
0
20
5 .0
0
M a x.
5 .5
5 .5
75
150
1
1
3 .6
4
5 .5
0 .4
100
5 .5
0 .4
U n it
mA
mA
V
V
MHz
0
20
100
ns
6 /f
74HC244
1 ch
-
3 .5
1 .2 6
5
Vdd
GND
IN P
-
µs
-
-
-
f
-
Hz
V
V
mA
V
ns
ns
V
V
kΩ
V
1
InGaAs linear image sensor
G9494-256D/-512D
■ S pecification (Ta= 25 °C , V dd= 5 V, IN P = 3.5 V, Vref= 1.26 V, C f= 0.1 pF, f= 2 M H z, integration tim e 200 µ s, per 1 elem ent)
Parameter
Peak sensitivity wavelength
Saturation charge
Symbol
λp
Qsat
256 ch
512 ch
Dark current
Condition
Vφ=5 V
ID
RMS noise voltage (readout noise)
Standard deriation
Number of
integration 50
N
Saturation voltage
Photo response non uniformity
Detective pixel
Vsat
PRNU
-
Min.
-
Typ.
1.55
0.2
4
1
Max.
20
5
Unit
µm
pC
-
900
2000
µV rms
-
2
±5
-
±20
1
V
%
%
■ Equivalent circuit
q
(
)
1 PIXEL
Cf=1 pF
Cf=0.1 pF
SHIFT REGISTER
OFFSET
COMPENSATION
CIRCUIT
CDS
VIDEO
PHOTODIODE
AD-TRIG
TIMING GENERATOR
Vdd
INP Vss Cf SELECT
CLK
RESET
Vref
EXTERNAL INPUT
KMIRC0027EA
■ Basic circuit connection
CLK
RESET
BUFFER AMP
Vref
VIDEO
Vdd
Cf SELECT
INP
AD-TRIG
Vss
BUFFER AMP
KMIRC0012EA
2
pA
InGaAs linear image sensor
G9494-256D/-512D
■ Timing chart
tr (clk)
tf (clk)
CLK
t1
t2
tr (RES)
tf (RES)
RESET
INTEGRATION
TIME
INTEGRATION TIME
(ACCURACY)
BLANK PERIOD
AD_TIRG
VIDEO
1 ch 2 ch 3 ch 4 ch 5 ch
253 ch 255 ch
252 ch 254 ch 256 ch
KMIRC0025EB
Note) More than 3 µs is required for a blank period from the last pixel to the rising edge of RESET pulse.
Parameter
Clock pulse frequency
Clock pulse width
Clock pulse rise / fall times
Reset pulse width *3
Reset pulse rise / fall times
Clock pulse to start pulse timing
Video delay time
*3: 6 µs or more
Symbol
tpw (clk)
tr (clk), tf (clk)
tpw (RES)
tr (RES), tf (RES)
t1, t2
tvd
■ Spectral response
Min.
0.1
100
0
6/f
0
50
100
Typ.
2
20
20
-
Max.
4
100
100
-
Unit
MHz
ns
ns
µs
ns
ns
ns
■ Photo sensitivity temperature characteristics
(Typ. T=25 ˚C)
1.0
(Typ.)
120
RELATIVE SENSITIVITY (%)
PHOTO SENSITIVITY (A/W)
70 ˚C
0.5
0
0.5
1.0
1.5
2.0
100
30 ˚C
80
-10 ˚C
60
40
20
0
1.52
1.54
1.56
1.58
1.60
1.62
1.64
WAVELENGTH (µm)
WAVELENGTH (µm)
KMIRB0019EA
KMIRB0020EA
3
InGaAs linear image sensor
■ Noise vs. temperature
2.0
G9494-256D/-512D
■ Dark current vs. temperature
(Typ. Vdd=5 V, INP=3.5 V, Vref=1.26 V, Cf=0.1 pF, Integration time 200 µs, Number of integrations 50)
(Typ.)
100 pA
G9494-256D
10 pA
DARK CURRENT
NOISE (mV rms)
1.5
1.0
0.5
0
-20
1 pA
G9494-512D
100 fA
-10
0
10
20
30
40
50
60
10 fA
-20
70
TEMPERATURE (˚C)
-10
0
10
20
30
40
50
60
70
TEMPERATURE (˚C)
KMIRB0036EA
KMIRB0035EA
■ Dimensional outlines (unit: mm)
G9494-256D
3.0 ± 0.3
0.75 ± 0.08
1.3 ± 0.15
13 12
22 21
10.2 ± 0.25
10.05 ± 0.25
10.45 ± 0.25
2.1 ± 0.5
CMOS AMP
31.75 ± 0.3
4.0 ± 1.0
INDEX MARK
1 2
ACTIVE AREA
10 11
AR COATED
SAPPHIRE GLASS
2.54
25.4 ± 0.15
0.95 ± 0.3
Pin No.
1
2
3
4
5
6
7
8
9
10
11
Pin connection
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
Pin No.
12
13
14
15
16
17
18
19
20
21
22
Pin connection
VIDEO
Vref
CLK
NC
INP
Vss
Vdd
NC
AD-TRIG
RESET
Cf-SELECT
KMIRA0015EA
4
InGaAs linear image sensor
G9494-256D/-512D
G9494-512D
3.0 ± 0.3
CMOS AMP
15.24 ± 0.25
13 12
15.11 ± 0.25
22 21
15.49 ± 0.25
0.75 ± 0.08
1.0 ± 0.1
31.75 ± 0.3
1
2
+0.3
16.5-0.0
INDEX MARK
ACTIVE AREA
10 11
AR COATED
SAPPHIRE GLASS
2.54 ± 0.15
0.95 ± 0.3
Pin No.
1
2
3
4
5
6
7
8
9
10
11
Pin connection Pin No.
NC
12
RESET-EVEN
13
AD-TRIG-EVEN
14
NC
15
NC
16
NC
17
NC
18
NC
19
CLK-EVEN
20
NC
21
VIDEO-EVEN
22
Pin connection
VIDEO-ODD
Vref
CLK-ODD
NC
INP
Vss
Vdd
NC
AD-TRIG-ODD
RESET-ODD
Cf-SELECT
“-EVEN” FOR EVEN No. PIXELS,
“-ODD” FOR ODD No. PIXELS.
KMIRA0016EA
■ Pin connection
Terminal name
CLK
Input/Output
Input (CMOS logic)
RESET
Input (CMOS logic)
Vdd
Vss
INP
Input
Input
Cf SELECT
Input
Vref
AD-TRIG
VIDEO
Input
Output
Output
Function and recommended connection
Clock pulse for operating the CMOS shift register
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed on the CMOS chip. The width of the reset pulse determines
integration time.
Supply voltage for operating the signal processing circuit on the CMOS chip
Ground for the signal processing circuit on the CMOS chip
Reset voltage for the charge amplifier array on the CMOS chip
Voltage that determines the feedback capacitance (Cf) on the CMOS chip.
Cf=0.1 pF at 0 V, and Cf=1 pF at 5 V
Reset voltage for the offset compensation circuit at the CMOS chip
Digital signal for AD conversion; positive polarity
Analog video signal; positive polarity
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMIR1014E03
Aug. 2007 DN
5
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