PD -50055B GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL recognition pending VCES = 600V VCE(on) typ. = 1.6V @VGE = 15V, IC = 100A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current• Peak Switching Current‚ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. Units 600 100 200 200 200 ±20 2500 320 170 -40 to +150 -40 to +125 V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS www.irf.com Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module Typ. Max. — — 0.1 — — 200 0.38 0.70 — 4.0 3.0 — Units °C/W N.m g 1 4/24/2000 GA100TS60U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 600 — — VGE = 0V, IC = 1mA — 1.6 2.1 VGE = 15V, IC = 100A — 1.6 — V VGE = 15V, IC = 100A, TJ = 125°C Gate Threshold Voltage 3.0 — 6.0 IC = 500µA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = V GE, IC = 500µA Forward Transconductance „ — 107 — S VCE = 25V, I C = 100A Collector-to-Emitter Leaking Current — — 1.0 mA VGE = 0V, VCE = 600V — — 10 VGE = 0V, VCE = 600V, TJ = 125°C Diode Forward Voltage - Maximum — 3.6 — V IF = 100A, VGE = 0V — 3.5 — IF = 100A, VGE = 0V, TJ = 125°C Gate-to-Emitter Leakage Current — — 100 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt 2 Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 443 86 150 168 145 320 242 4.0 7.0 11 9837 615 128 143 95 6813 1883 Max. Units Conditions 664 VCC = 400V 129 nC IC = 66A 225 TJ = 25°C — RG1 = 27Ω, RG2 = 0Ω — ns IC = 100A — VCC = 360V — VGE = ±15V — mJ — 17 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 100A — A RG1 = 27Ω — nC RG2 = 0Ω — A/µs VCC = 360V di/dt»1300A/µs www.irf.com GA100TS60U 100 F o r b o th : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d LOAD CURRENT (A) 80 P o w e r D is s ip a tio n = 73 W S q u a re w a v e : 60 60 % of ra ted vo ltag e 40 I Id e a l d io d e s 20 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 1000 TJ = 125 o C 100 TJ = 25 ° C TJ = 125 ° C 100 V GE = 15 V 20µs PULSE WIDTH 10 0.8 1.2 1.6 2.0 2.4 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 25 o C 10 VV = 50V 25V CC CE = 5µs PULSE 80µs PULSEWIDTH WIDTH 1 5 6 7 8 9 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 GA100TS60U 2.5 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 120 100 80 60 40 20 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH I C = 200 A 2.0 I C = 100 A 1.5 I C = 50 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) TC , Case Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature T h e rm a l Im p ed a n ce - Z th J C 1 D = 0 .5 0 0.1 0.20 0.10 0 .05 0.02 0.01 PDM t 1 t2 S in g le P u ls e (T h e rm a l R e sis ta n c e ) Notes: 1. Duty factor D = t 1 /t 2 2. Peak TJ = PDM x Z thJC + T C 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , R e c ta ng ular Pu lse D u ra tio n (S e co n d s ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA100TS60U 20000 VGE , Gate-to-Emitter Voltage (V) 16000 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies 12000 8000 Coes 4000 Cres VCC = 400V I C = 66A 16 12 8 4 0 0 1 10 0 100 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 100 V CC = 360V V GE = 15V °C 125°C TJ = 25 I = 100A 16 C 14 12 10 8 20 30 40 RGRG1 , Gate Resistance , Gate Resistance(Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 300 400 500 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 18 10 200 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) 50 RG1 Ω;RG2 = 0 Ω = Ohm G =15 VGE = 15V VCC = 360V IC = 200 A IC = 100 A 10 IC = 50 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 GA100TS60U Total Switching Losses (mJ) 30 300 RG1 Ω;RG2 = 0 Ω = Ohm G =15 T J = 150 ° C VCC = 0V 25 VGE = 15V 250 20 200 15 150 10 100 5 50 0 V G E = 20V T J = 125°C V C E m easured at term inal (Peak V oltage) SAFE O PERATING AREA A 0 0 40 80 120 160 200 0 I C , Collector-to-emitter Current (A) 100 200 300 400 500 600 700 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 1000 12000 I F = 1 00 A I F = 5 0A 8000 Q R R - (nC ) In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) I F = 2 00 A 10000 100 T J = 125°C T J = 25°C 6000 4000 2000 VR = 36 0 V TJ = 12 5 °C TJ = 25 °C 10 1.0 2.0 3.0 4.0 5.0 F o rwa rd V o lta g e D ro p - V FM (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 0 500 1000 1500 2000 di f /dt - (A /µs) Fig. 14 - Typical Stored Charge vs. dif/dt www.irf.com GA100TS60U 150 240 VR = 3 6 0V TJ = 1 25 °C TJ = 2 5°C I F = 2 00 A I F = 2 00 A 120 I F = 1 00 A 200 I F = 1 00 A I F = 50 A I IR R M - (A ) t rr - (n s) I F = 50 A 160 90 60 120 30 VR = 3 6 0 V T J = 1 2 5 °C T J = 2 5 °C 80 500 1000 1500 2000 di f /dt - (A /µs) Fig. 15 - Typical Reverse Recovery vs. dif/dt www.irf.com 0 500 1000 1500 2000 d i f /d t - (A /µ s ) Fig. 16 - Typical Recovery Current vs. dif/dt 7 GA100TS60U 90% Vge +Vge Vce Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e icIcd tdt Vce t1 Fig. 17 - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id t Icddt tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt E o n = VVce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc d t dt t3 t4 Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr www.irf.com GA100TS60U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 21. Macro Waveforms for Figure 17's Test Circuit RL= 480V 4 X IC @25°C 0 - 480V Figure 22. Pulsed Collector Current Test Circuit www.irf.com 9 GA100TS60U Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. R See fig. 17 S For screws M5x0.8 T Pulse width 80µs; single shot. Case Outline — INT-A-PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com