GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics INT-A-PAK • Industry standard package • Al2O3 DBC • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY • Designed for industrial level VCES 600 V IC DC 209 A BENEFITS VCE(on) at 200 A, 25 °C 2.6 V • Benchmark efficiency for UPS and welding application • Rugged transient performance • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS TC = 25 °C TC = 80 °C MAX. UNITS 600 V 209 142 Pulsed collector current ICM 400 Clamped inductive load current ILM 400 Diode continuous forward current IF Gate to emitter voltage VGE Maximum power dissipation PD Isolation voltage Document Number: 94503 Revision: 04-May-10 VISOL A TC = 25 °C 178 TC = 80 °C 121 ± 20 TC = 25 °C 781 TC = 80 °C 438 Any terminal to case, t = 1 minute 2500 For technical questions, contact: [email protected] V W V www.vishay.com 1 GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 500 μA 600 - - VGE = 15 V, IC = 100 A - 1.95 2.1 VGE = 15 V, IC = 200 A - 2.6 2.84 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.28 2.5 VGE = 15 V, IC = 200 A, TJ = 125 °C - 3.14 3.48 VCE = VGE, IC = 500 μA 3 4.2 6 VGE = 0 V, VCE = 600 V - 0.005 0.2 VGE = 0 V, VCE = 600 V, TJ = 150 °C - 0.01 15 IC = 100 A - 1.39 1.78 IC = 200 A - 1.64 2.2 IC = 100 A, TJ = 125 °C - 1.32 1.69 IC = 200 A, TJ = 125 °C - 1.67 2.30 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 3.65 - V mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching loss SYMBOL TEST CONDITIONS Eon IC = 200 A, VCC = 360 V, VGE = 15 V, Rg = 10 Ω, L = 200 μH, TJ = 25 °C Turn-off switching loss Eoff - 6.9 - Total switching loss Etot - 10.55 - Turn-on switching loss Eon - 3.8 - Turn-off switching loss Eoff - 7.8 - Total switching loss Etot - 11.6 - - 507 - tr - 133 - td(off) - 538 - - 92 - Turn-on delay time Rise time Turn-off delay time Fall time td(on) mJ IC = 200 A, VCC = 360 V, VGE = 15 V, Rg = 10 Ω, L = 200 μH, TJ = 125 °C ns tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 400 A, Rg = 27 Ω, VGE = 15 V to 0 Short circuit safe operating area SCSOA TJ = 150 °C, VCC = 400 V, VP = 600 V, Rg = 27 Ω, VGE = 15 V to 0 Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr www.vishay.com 2 IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 25 °C IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 125 °C For technical questions, contact: [email protected] Fullsquare 10 - - - 226 260 ns - 17 20 A - 1900 2600 nC - 290 330 ns - 25 30 A - 3600 5000 nC Document Number: 94503 Revision: 04-May-10 GB200TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 209 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction and storage temperature range SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - 0.13 0.16 - 0.19 0.32 - 0.1 - case to heatsink - - 4 case to terminal 1, 2, 3 - - 3 - 185 - IGBT Junction to case per leg Diode Case to sink per module RthJC RthCS °C/W Mounting torque Nm Weight 300 g 300 Vge = 18V Vge = 15V Vge = 12V 250 250 200 150 IcE (A) IcE (A) 200 Vge = 9V 150 100 100 50 50 Tj = 125°C Tj = 25°C 0 0 0 1 2 3 0 4 2 3 4 5 6 7 8 9 VGE (V) Fig. 1 - Typical IGBT Output Characteristics TJ = 25 °C, tp = 500 μs Fig. 3 - Typical Transfer Characteristics VCE = 20 V, tp = 500 μs 300 3.5 VCE, Collector -to-Emitter Voltage (V) Vge = 18V Vge = 15V Vge = 12V 250 200 IcE (A) 1 VCE (V) Vge = 9V 150 100 50 Ic = 200A 3 2.5 Ic = 100A 2 Ic = 50A 1.5 1 0 0 1 2 3 4 5 Fig. 2 - Typical IGBT Output Characteristics TJ = 125 °C, tp = 500 μs Document Number: 94503 Revision: 04-May-10 0 40 80 120 160 TJ, Junction Temperature (°C) VCE (V) Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A 1000 200 td(off) Switching Time (ns) IF (A) 150 100 Tj = 125°C 50 td(on) tf 100 tr Tj = 25°C 10 0 0.0 0.5 1.0 1.5 40 2.0 60 80 100 120 140 160 180 200 220 VF (V) IC (A) Fig. 8 - Typical Switching Time vs. IC TJ = 125 °C, L = 200 μH, VCC = 360 V, Rg = 10 Ω, VGE = 15 V Fig. 5 - Diode Forward Characteristics, tp = 500 μs 13000 160 12000 11000 120 Eoff 10000 Energy (mJ) TC, Case Temperature (°C) 140 100 80 DC 60 9000 8000 Eon 7000 6000 40 5000 20 4000 3000 0 0 50 100 150 200 5 250 10 15 20 25 30 35 40 45 50 Maximum DC Collector Current (A) RG (Ω) Fig. 6 - Maximum Collector Current vs. Case Temperature Fig. 9 - Typical Energy Loss vs. Rg TJ = 125 °C, L = 200 μH, VCC = 360 V, ICE = 200 A, VGE = 15 V 8000 10000 7000 5000 Energy Time (ns) Energy (mJ) 6000 Eoff 4000 3000 Eon 2000 1000 td(off) td(on) tr 100 tf 1000 0 10 50 100 150 200 0 10 Fig. 7 - Typical Energy Loss vs. IC TJ = 125 °C, L = 200 μH, VCC = 360 V, Rg = 10 Ω, VGE = 15 V www.vishay.com 4 20 30 40 50 RG (Ω) IC (A) Fig. 10 - Typical Switching Time vs. Rg TJ = 125 °C, L = 200 μH, VCC = 360 V, ICE = 200 A, VGE = 15 V For technical questions, contact: [email protected] Document Number: 94503 Revision: 04-May-10 GB200TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 209 A 100 Total Switching Losses (mJ) 10 ohm 90 80 IRR (A) 70 27 ohm 60 50 47 ohm 40 30 20 40 80 120 160 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 5 200 10 15 IF (A) 25 30 35 40 45 50 RG (Ω) Fig. 14 - Typical Switching Losses vs. Gate Resistance TJ = 125 °C, L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V Fig. 11 - Typical Diode Irr vs. IF TJ = 125 °C 100 100 Total Switching Losses (mJ) 90 80 IRR (A) 20 70 60 50 40 30 Ic = 200A 10 Ic = 100A Ic = 50A 1 0 10 20 30 40 50 0 25 50 75 100 125 RG (Ω) TJ - Junction Temperature (°C) Fig. 12 - Typical Diode Irr vs. Rg TJ = 125 °C, IF = 200 A Fig. 15 - Typical Switching Losses vs. Junction Temperature; L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V 100 12 Total Switching Losses (mJ) 11 IRR (A) 90 80 70 60 10 9 8 7 6 5 4 3 50 2 600 700 800 900 1000 1100 1200 1300 40 60 80 100 120 140 160 180 200 220 dIF / dt (A/μs) IC (A) Fig. 13 - Typical Diode Irr vs. dIF/dt TJ = 125 °C, VCC = 360 V, IF = 200 A, VGE = 15 V Fig. 16 - Typical Switching Losses vs. Collector to Emitter Current; TJ = 125 °C,Rg1 = 10 Ω, Rg2 = 0 Ω, VCC = 360 V, VGE = 15 V Document Number: 94503 Revision: 04-May-10 For technical questions, contact: [email protected] www.vishay.com 5 GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A Thermal response (Z thJC) 1 0.1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 0.01 D = 0.02 D = 0.01 Notes: 1. Duty Factor D = t1/t2 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 1E-02 2. Peak Tj = Pdm x ZthJC + Tc 1E-01 1E+00 1E+01 t1 , Rectangular Pulse Duration (sec) Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Thermal response (Z thJC) 1 D = 0.5 0.1 D = 0.2 D = 0.1 D = 0.05 0.01 D = 0.02 D = 0.01 Notes: 1. Duty Factor D = t1/t2 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 2. Peak Tj = Pdm x ZthJC + Tc 1E-02 1E-01 1E+00 t1 , Rectangular Pulse Duration (sec) Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED®) www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94503 Revision: 04-May-10 GB200TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 209 A ORDERING INFORMATION TABLE Device code G B 200 T S 60 N PbF 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - B = IGBT Generation 5 NPT 3 - Current rating (200 = 200 A) 4 - Circuit configuration (T = Half-bridge) 5 - Package indicator (S = INT-A-PAK) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (N = Ultrafast IGBT) 8 - Lead (Pb)-free CIRCUIT CONFIGURATION 3 6 7 1 4 5 2 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94503 Revision: 04-May-10 www.vishay.com/doc?95173 For technical questions, contact: [email protected] www.vishay.com 7 Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) Ø 6.5 (0.25 DIA) 80 (3.15) 23 (0.91) 7 6 4 5 (0.20) 5 23 (0.91) 1 3 screws M6 x 10 2 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 35 (1.38) 17 (0.67) 3 66 (2.60) 37 (1.44) 94 (3.70) Document Number: 95067 Revision: 15-Feb-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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