GBJ25 SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 25A GBJ2504 Thru GBJ2512 30±0.3 3.6±0.1 ±0. 2 4.6±0.1 + ~ 5±0.2 11.2±0.2 20±0.3 3.2 ~ 2.2±0.2 2.7±0.1 1±0.1 60 0.65±0.05 7.5±0.2 °± 5° 0.5±0.1 0.5±0.1 10±0.2 17.5±0.2 4±0.2 2.5±0.2 7.5±0.2 All dimensions in millimeters FEATURES UL recognition file number E320098 Typical IR less than 2.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V + TYPICAL APPLICATIONS ~ ~ General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications. ADVANTAGE PRIMARY CHARACTERRISTICS IF(AV) 25A V RRM 400V to 1200V I FSM 350A International standard package IR Epoxy meets UL 94 V-O flammability rating V F Small volume, light weight T J max. Small thermal resistance High heat-conduction rate Low temperature rise High temperature soldering guaranteed : 260°C/10 second, 2.3kg tension force Weight: 6.5g (0.23 ozs) www.nellsemi.com Page 1 of 3 5 µA 1.10V 150ºC GBJ25 SEMICONDUCTOR RoHS RoHS Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) GBJ25 PARAMETER UNIT SYMBOL 04 06 08 10 12 Maximum repetitive peak reverse voltage V RRM 400 600 800 1000 1200 V Peak reverse non-repetitive voltage V RSM 500 700 900 1100 1300 V Maximum DC blocking voltage V DC 400 600 800 1000 1200 V Maximum average forward rectified output current, T c = 85 ° C I F(AV) 25 A I FSM 350 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 508 A 2s RMS isolation voltage from case to leads V ISO 2500 V TJ -40 to 150 ºC T STG -40 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range Storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) GBJ25 TEST CONDITIONS SYMBOL Maximum instantaneous forward drop per diode I F = 12.5A VF Maximum reverse DC current at rated DC blocking T A = 25 ° C PARAMETER voltage per diod 04 06 08 UNIT 10 12 1.10 V 5 IR T A = 150 ° C µA 500 THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted) GBJ25 TEST CONDITIONS PARAMETER UNIT SYMBOL 04 Typical thermal resistance junction to case Single-side heat dissipation, sine half wave Mounting torque ± 10 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink M3 R θJC (1) Approximate weight Notes (1) With heatsink, single side heat dissipation, half sine wave. Device code GBJ 25 10 3 www.nellsemi.com 1 - Product type : “GBJ” Package,1 2 - I F(AV) rating : "25" for 25 A 3 - Voltage code : code x 100 = VRRM Page 2 of 3 Bridge 06 08 10 12 1.0 °C/W 0.8 Nm 6.5 g GBJ25 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Derating curve for output rectified current Fig.2 Maximum non-repetitive peak forward surge current per bridge element T J = 25°C Average output current, amperes (A) Average forward output current, amperes (A) 400 25 20 15 10 5 0 200 100 0 0 20 60 40 80 100 120 140 160 10 1 100 Ambient temperature (°C) Number of cycles at 50H z Fig.3 Typical reverse characteristics per bridge element Fig.4 Typical forward characteristics per bridge element 100 100 Instantaneous forward current, amperes (A) Instantaneous reverse output micro, amperes ( μ A) 300 10 TJ = 100 °C 1.0 0.1 TJ = 2 5°C 10 1.0 T J = 25°C 0.1 0.01 0 20 40 60 80 100 120 140 Percent of rated peak reverse voltage (%) www.nellsemi.com 0.5 0.7 0.9 1.1 Forward voltage (v) Page 3 of 3 1.3