GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes ® TM RoHS Compliant KEY FEATURES The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. Available as packaged devices or as chips for hybrid applications Low Loss Suitable for applications to 18Ghz The NIP diode is used when negative bias current is available for forward conduction and will operate with as little as -10 mA bias. These diodes have somewhat faster speeds as compared with similar PIN diodes. High Speed Low Insertion Loss These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. High Isolation Reverse Polarity for Applications with special Bias Considerations This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. RoHS Compliant www.MICROSEMI.com DESCRIPTION 1 APPLICATIONS The GC4300 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR witches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). APPLICATIONS/BENEFITS RF / Microwave Switching The GC4300 series are also used as passive and active limiters for low to moderate RF power levels. Duplexers Digital Phase Shifting Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. Phased Array Radar ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Value Unit IR 0.5 uA Storage Temperature TSTG -65 to +200 ºC Operating Temperature TOP -55 to +150 ºC Maximum Leakage Current @80% of Minimum Rated VB IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change, consult the factory for further information. GC4310 – GC4375 Symbol 1 These devices are supplied with gold plated terminations. These devices are ESD sensitive and must be handled using ESD precautions. Copyright 2007 Rev: 2009-02-02 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes ® TM RoHS Compliant . DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E @20 mA TL(nS) IR=6mA/IF=10mA Thermal Resistance θ (˚C/W) (Max) (Typ) (Max) VB(V) CJ (pF) 2 RS(Ω) 3 (Min) (Max) IR=10μA @VR=10V GC4371 70 0.1 0.9 70 70 GC4372 70 0.2 0.7 70 70 GC4373 70 0.3 0.6 70 60 GC4374 70 0.4 0.5 70 50 GC4375 70 0.5 0.4 70 40 GC4310 100 0.06 1.5 170 80 GC4311 100 0.1 1 170 70 GC4312 100 0.2 0.9 170 70 GC4313 100 0.3 0.8 170 60 GC4314 100 0.4 0.6 170 50 GC4315 100 0.5 0.4 170 40 GC4320 200 0.06 1.5 200 80 GC4321 200 0.1 1.2 200 70 GC4322 200 0.2 1 200 70 GC4323 200 0.3 0.9 200 60 GC4324 200 0.4 0.8 200 50 GC4325 200 0.5 0.5 200 40 www.MICROSEMI.com Model Number 1 Notes: 1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request. 2. Capacitance is measured at 1 MHz. 3. Resistance is measured AT 1 GHz using transmission loss techniques. The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and characterization is completed using a style 30 package. Diodes are available in many case styles. Each type offers performance trade-offs. The proper choice of package style depends on the end application and operating environment. Consult factory for assistance. Standard polarity (PIN) diodes and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4200, GC4400, and GC4500 series respectively.) ELECTRICAL Copyright 2007 Rev: 2009-02-02 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes ® TM RoHS Compliant TYPICAL RS CURVES TYPICAL RS CURVES www.MICROSEMI.com TYPICAL RS CURVES GRAPHS Copyright 2007 Rev: 2009-02-02 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes ® TM RoHS Compliant PACKAGE STYLE 30 Dimensions vary by model. Consult factory for details. PACKAGE STYLE 35 PACKAGE STYLE 115 www.MICROSEMI.com PACKAGE STYLE 00 MECHANICAL 50 OHM BOLT CHANNEL MODULE OTHER PACKAGE STYLES AVAILABLE ON REQUEST CONSULT FACTORY Copyright 2007 Rev: 2009-02-02 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4