GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique ® • Ideal for automated placement • Low forward voltage drop • Low leakage current ed* t n e Pat • High forward surge capability • Meets environmental standard MIL-S-19500 * Glass-plastic encapsulation technique is covered by patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 DO-214BA (GF1) • Meets MSL level 1, per J-STD-020C, LF max peak of 250 °C • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MAJOR RATINGS AND CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code GF1A GF1B GF1D GF1G GF1J GA GB GD GG GJ GF1K GF1M GK GM UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Maximum average forward rectified current at TL = 125 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number 88617 26-Jun-06 V www.vishay.com 1 GF1A thru GF1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL at 1.0 A GF1B VF TA = 25 °C TA = 125 °C Maximum DC reverse current at rated DC blocking voltage GF1A GF1D GF1G GF1J GF1K GF1M UNIT 1.2 V 1.1 IR 5.0 50 µA Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 3.0 µs Typical junction capacitance at 4.0 V, 1 MHz CJ 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GF1A GF1B GF1D GF1G RθJA RθJL Typical thermal resistance (1) GF1J GF1K GF1M 80 26 UNIT °C/W Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ORDERING INFORMATION UNIT WEIGHT (g) REFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GF1J-E3/67A PREFERRED P/N 0.104 67A 1500 7" Diameter Plastic Tape & Reel GF1J-E3/5CA 0.104 5CA 6500 13" Diameter Plastic Tape & Reel 30 60 Hz Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.0 0.5 P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0 100 25 20 15 10 5 0 110 120 130 140 150 160 Lead Temperature (°C) Figure 1. Forward Current Derating Curve www.vishay.com 2 Tj = Tj max. 8.3 ms Single Half Sine-Wave 175 1 10 100 Number of Cycles at 60 Hz Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 88617 26-Jun-06 GF1A thru GF1M Vishay General Semiconductor 30 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 1 0.1 Pulse Width = 300 µs 1 % Duty Cycle Tj = 25 °C 0.01 0.4 Tj = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.6 0.8 1.0 1.2 1.4 1 1.6 Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 10 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Leakage Current (mA) 100 10 Instantaneous Forward Voltage (V) 1 Tj = 100 °C 0.1 Tj = 25 °C 0.01 0 20 40 60 80 Mounted on 0.2 x 0.27" (5.0 x 7.0 mm) Copper Pad Areas 10 1 0.1 0.01 100 Percent of Rated Peak Reverse Voltage (%) 0.1 1 10 100 t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214BA (GF1) Cathode Band Mounting Pad Layout 0.066 (1.68) 0.040 (1.02) 0.076 MAX. (1.93 MAX.) 0.066 MIN. (1.68 MIN.) 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.060 MIN. (1.52 MIN.) 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.100 (2.54) 0.060 (1.52) 0.030 (0.76) Document Number 88617 26-Jun-06 0.006 (0.152) TYP. 0.220 (5.58) REF 0.114 (2.90) 0.094 (2.39) 0.226 (5.74) 0.196 (4.98) www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1