CORPORATION G M 11 8 8 ISSUED DATE :2005/07/19 REVISED DATE :2005/10/19B PNP SILICON EPITAXIAL TRANSISTOR Description The GM1188 is designed for medium power amplifier applications. Features Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) Complementary pair with GM1766 Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -40 -32 -5 -2 0.5 (2.0*) Unit V V V A W *When mounted on a 40x40x0.7mm ceramic board. Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 - Typ. -500 150 50 ,unless otherwise noted) Max. Unit Test Conditions V IC=-50uA , IE=0 V IC=-1mA, IB=0 V IE=-50uA ,IC=0 -1 uA VCB=-20V, IE=0 -1 uA VEB=-4V, IC=0 -800 mV IC=-2A, IB=-200mA 390 VCE=-3V, IC=-500mA MHz VCE=-5V, IC=-500mA, f=30MHz pF VCB=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width Classification Of hFE Rank Range P 82 ~ 180 Q 120 ~ 270 380 s, Duty Cycle 2% R 180 ~ 390 1/2 CORPORATION ISSUED DATE :2005/07/19 REVISED DATE :2005/10/19B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2