SUNMATE GS3AB Surface mount silicon rectifier diode Datasheet

GS3AB - GS3MB
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
!
Glass Passivated Die Construction
!
!
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop
Low Power Loss
!
Built-in Strain Relief
!
!
Plastic
Case
Material
has
UL
Flammability
B
SMB(DO-214AA)
Classification Rating 94V-O
Mechanical Data
!
!
!
!
!
A
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
C
D
J
H
Maximum Ratings and Electrical Characteristics
G
E
Dim
Min
A
3.30
Max
3.94
B
4.06
4.70
C
1.91
2.21
D
0.15
0.31
E
5.00
5.59
G
0.10
0.20
H
0.76
1.52
J
2.00
2.62
All Dimensions in mm
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TL = 75°C
GS3AB GS3BB GS3DB GS3GB GS3GB GS3KB GS3MB
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
100
A
Forward Voltage
@IF = 3.0A
VFM
1.20
V
@TA = 25°C
@TA = 125°C
IRM
5.0
250
µA
Reverse Recovery Time (Note 1)
trr
2.5
µS
Typical Junction Capacitance (Note 2)
Cj
60
pF
RJL
13
°C/W
Tj, TSTG
-65 to +150
°C
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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IF, INSTANTANEOUS FORWARD CURRENT (A)
IAV, AVERAGE FORWARD CURRENT (A)
3.0
Resistive or
Inductive Load
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
10
1.0
0.1
0.01
0
TL , LEAD TEMPERATURE (ºC)
Single Half-Sine-Wave
JEDEC Method
1.4
1.8
100
80
60
40
20
1000
IR, INSTANTANEOUS REVERSE CURRENT (µA)
IFSM , PEAK FORWARD SURGE CURRENT (A)
1.0
Fig. 2 Typical Forward Characteristics
120
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
0
10
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Current Derating Curve
1
0.4
20
40
60
80
100
120
140
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Forward Surge Current Derating Curve
Fig. 4 Typical Reverse Characteristics
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