HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. FEATURES • High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute • Underwriters Laboratory (UL) recognized File# E90700 ANODE 1 APPLICATIONS • • • • • Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls CATHODE 2 N/C 3 6 BASE 5 COLLECTOR 4 EMITTER ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Symbol Value Units TSTG -55 to +150 °C Operating Temperature TOPR -55 to +100 °C Lead Solder Temperature TSOL 260 for 10 sec °C Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER *Forward DC Current *Reverse Input Voltage *Forward Current - Peak (1µs pulse, 300pps) *LED Power Dissipation @ TA = 25°C Derate above 25°C 260 mW 3.5 mW/°C IF 80 mA VR 6.0 V IF(pk) 3.0 A PD PD 150 mW 1.41 mW/°C 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 ABSOLUTE MAXIMUM RATINGS (Cont.) Parameter Symbol Value Units 300 mW 4.0 mW/°C DETECTOR *Power Dissipation @ TA = 25°C PD Derate linearly above 25°C H11D1 - H11D2 *Collector to Emitter Voltage *Collector Base Voltage 300 H11D3 - H11D4 200 VCER 4N38 80 H11D1 - H11D2 300 H11D3 - H11D4 VCBO 4N38 *Emitter to Collector Voltage V 200 80 H11D1 - H11D2 VECO H11D3 - H11D4 7 Collector Current (Continuous) 100 ELECTRICAL CHARACTERISTICS mA (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Characteristic Test Conditions EMITTER *Forward Voltage Forward Voltage Temp. Coefficient Reverse Breakdown Voltage (IF = 10 mA) Symbol Device VF !VF !TA BVR (IR = 10 µA) (VF = 0 V, f = 1 MHz) (VF = 1 V, f = 1 MHz) (VR = 6 V) (RBE = 1 M") (IC = 1.0 mA, IF = 0) (No RBE) (IC = 1.0 mA) BVCEO (IC = 100 µA, IF = 0) BVCBO Emitter to Base Emitter to Collector (IE = 100 µA , IF = 0) BVEBO BVECO *Leakage Current Collector to Emitter (RBE = 1 M") (VCE = 200 V, IF = 0, TA = 25°C) (VCE = 200 V, IF = 0, TA = 100°C) (VCE = 100 V, IF = 0, TA = 25°C) (VCE = 100 V, IF = 0, TA = 100°C) (No RBE) (VCE = 60 V, IF = 0, TA = 25°C) Junction Capacitance *Reverse Leakage Current DETECTOR *Breakdown Voltage Collector to Emitter *Collector to Base CJ IR BVCER Typ** Max Unit ALL 1.15 1.5 V ALL -1.8 mV/°C 25 50 65 0.05 V pF pF µA ALL ALL ALL ALL H11D1/2 H11D3/4 4N38 H11D1/2 H11D3/4 4N38 4N38 ALL H11D1/2 ICER H11D3/4 ICEO 4N38 Min 6 300 200 80 300 200 80 7 7 10 V 10 100 250 100 250 50 nA µA nA µA nA Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at TA = 25°C 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 TRANSFER CHARACTERISTICS DC Characteristic Test Conditions Symbol Device EMITTER Min Typ** Max Unit H11D1 (IF = 10 mA, VCE = 10 V) Current Transfer Ratio H11D2 (RBE = 1 M") Collector to Emitter CTR H11D3 (IF = 10 mA, VCE = 10 V) (IF = 10 mA, IC = 0.5 mA) *Saturation Voltage (RBE = 1 M") VCE (SAT) 2 (20) mA (%) H11D4 1 (10) 4N38 2 (20) H11D1/2/3/4 (IF = 20 mA, IC = 4 mA) 0.1 0.40 4N38 V 1.0 TRANSFER CHARACTERISTICS Characteristic Test Conditions SWITCHING TIMES Non-Saturated Turn-on Time Symbol Device (VCE =10 V, ICE = 2 mA) ton ALL 5 (RL = 100 ") toff ALL 5 Symbol Device (II-O #$1 µA, 1 min.) VISO ALL (VI-O = 500 VDC) RISO ALL (f = 1 MHz) CISO ALL Turn-off Time Min Typ** Max Unit µs ISOLATION CHARACTERISTICS Characteristic Test Conditions Isolation Voltage Isolation Resistance Isolation Capacitance Min Typ** Max Unit 5300 (VACRMS) 7500 (VACPEAK) 1011 " 0.5 pF Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at TA = 25°C Fig.1 LED Forward Voltage vs. Forward Current Fig.2 Normalized Output Characteristics NORMALIZED ICER - OUTPUT CURRENT 1.8 VF - FORWARD VOLTAGE (V) 1.7 1.6 1.5 1.4 TA = 55˚C 1.3 TA = 25˚C 1.2 1.1 TA = 100˚C 1.0 1 10 IF - LED FORWARDCURRENT (mA) 100 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 10 IF = 50 mA IF = 10 mA 1 IF = 5 mA 0.1 0.01 0.1 1 10 100 VCE - COLLECTOR VOLTAGE (V) 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 Fig.4 Normalized Output Current vs. Temperature Fig.3 Normalized Output Current vs. LED Input Current NORMALIZED ICER - OUTPUT CURRENT NORMALIZED ICER - OUTPUT CURRENT 10 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 1 0.1 0.01 1 IF = 20 mA IF = 10 mA 1 IF = 5 mA 0.1 -60 10 -40 IF - LED INPUT CURRENT (mA) 1000 VCE = 300 V VCE = 100 V VCE = 50 V 10 1 0.1 10 20 30 40 50 60 70 80 TA - AMBIENT TEMPERATURE (˚C) 0 20 40 60 80 100 90 100 110 Normalized Collector-Base Current vs. Temperature NORMALIZED ICBO - COLLECTOR-BASE CURRENT NORMALIZED ICER - DARK CURRENT Normalized to: VCE = 100 V RBE = 106 Ω TA = 25˚C 100 -20 TA - AMBIENT TEMPERATURE (˚C) Fig.5 Normalized Dark Current vs. Ambient Temperature 10000 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 10 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 9 8 IF = 50 mA 7 6 5 4 3 2 IF = 10 mA 1 0 -60 IF = 5 mA -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (˚C) 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 Package Dimensions (Through Hole) 3 2 1 Package Dimensions (Surface Mount) 0.350 (8.89) 0.330 (8.38) PIN 1 ID. 3 2 PIN 1 ID. 1 0.270 (6.86) 0.240 (6.10) 0.270 (6.86) 0.240 (6.10) SEATING PLANE 4 5 6 0.350 (8.89) 0.330 (8.38) 5 4 0.070 (1.78) 0.045 (1.14) 6 0.300 (7.62) TYP 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.200 (5.08) 0.165 (4.18) 0.016 (0.41) 0.008 (0.20) 0.020 (0.51) MIN 0.154 (3.90) 0.100 (2.54) 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0° to 15° 0.300 (7.62) TYP 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) MIN 0.315 (8.00) MIN 0.405 (10.30) MAX 0.100 (2.54) TYP Lead Coplanarity : 0.004 (0.10) MAX Package Dimensions (0.4”Lead Spacing) 3 2 1 Recommended Pad Layout for Surface Mount Leadform PIN 1 ID. 0.270 (6.86) 0.240 (6.10) 4 5 0.070 (1.78) 0.060 (1.52) 6 SEATING PLANE 0.350 (8.89) 0.330 (8.38) 0.415 (10.54) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.100 (2.54) 0.295 (7.49) 0.030 (0.76) 0.004 (0.10) MIN 0.154 (3.90) 0.100 (2.54) 0.016 (0.40) 0.008 (0.20) 0° to 15° 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.400 (10.16) TYP NOTE All dimensions are in inches (millimeters) 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 ORDERING INFORMATION Order Entry Identifier Option S .S Description Surface Mount Lead Bend SD .SD Surface Mount; Tape and reel W .W 0.4” Lead Spacing 300 .300 VDE 0884 300W .300W VDE 0884, 0.4” Lead Spacing 3S .3S VDE 0884, Surface Mount 3SD .3SD VDE 0884, Surface Mount, Tape & Reel QT Carrier Tape Specifications (“D” Taping Orientation) 12.0 ± 0.1 4.85 ± 0.20 4.0 ± 0.1 0.30 ± 0.05 4.0 ± 0.1 Ø1.55 ± 0.05 1.75 ± 0.10 7.5 ± 0.1 16.0 ± 0.3 13.2 ± 0.2 9.55 ± 0.20 0.1 MAX 10.30 ± 0.20 Ø1.6 ± 0.1 User Direction of Feed NOTE All dimensions are in millimeters 8/9/00 200046A MARKING INFORMATION 1 H11D1 2 V XX YY K 6 3 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code Reflow Profile (Black Package, No Suffix) Temperature (°C) 300 215°C, 10–30 s 250 225 C peak 200 150 Time above 183°C, 60–150 sec 100 50 Ramp up = 3C/sec 0 0 0.5 1 1.5 2 2.5 Time (Minute) 3 3.5 4 4.5 • Peak reflow temperature: 225°C (package surface temperature) • Time of temperature higher than 183°C for 60–150 seconds • One time soldering reflow is recommended TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13