HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. FEATURES • High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3 • High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA • Low leakage current at elevated temperature (maximum 100 µA at 80°C) • Underwriters Laboratory (UL) recognized File# E90700 APPLICATIONS • • • • • CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer ANODE 1 CATHODE 2 N/C 3 6 BASE 5 COLLECTOR 4 EMITTER NOTE All dimensions are in inches (millimeters) ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C Input-Output Isolation Voltage EMITTER Forward Input Current Reverse Input Voltage Forward Current - Peak (1µs pulse, 300pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage H11G1 H11G2 H11G3 Detector Power Dissipation @ TA = 25°C Derate above 25°C Symbol Value Units TSTG -55 to +150 °C TOPR TSOL VISO -55 to +100 260 for 10 sec 260 3.5 5300 °C °C mW mW/°C Vac(rms) IF 60 mA VR IF(pk) 6.0 3.0 100 1.8 V A mW mW/°C 100 80 55 200 2.67 V PD PD VCEO PD mW mW/°C 7/21/00 200045A HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Characteristic Test Conditions EMITTER (IF = 10 mA) Forward Voltage Symbol Device VF Forward Voltage Temp. VF Coefficient TA Reverse Breakdown Voltage Junction Capacitance (IR = 10 µA) (VF = 0 V, f = 1 MHz) (VF = 1 V, f = 1 MHz) Reverse Leakage Current (VR = 3.0 V) BVR CJ IR DETECTOR Breakdown Voltage (IC = 1.0 mA, IF = 0) BVCEO Collector to Emitter Collector to Base (IC = 100 µA) Emitter to Base BVCBO BVEBO (VCE = 80 V, IF = 0) Collector to Emitter (VCE = 30 V, IF = 0) Max Unit ALL 1.3 1.50 V ALL -1.8 3.0 ALL 25 V 50 pF ALL 65 ALL 0.001 H11G1 100 H11G2 80 H11G3 55 H11G1 100 H11G2 80 H11G3 55 ALL 7 mV/°C pF 10 µA V 10 H11G1 (VCE = 60 V, IF = 0) Leakage Current Typ** ALL Min H11G2 ICEO 100 nA 100 µA Max Unit H11G3 (VCE = 80 V, IF = 0, TA = 80°C) H11G1 (VCE = 60 V, IF = 0, TA = 80°C) H11G2 TRANSFER CHARACTERISTICS DC Characteristic Test Conditions Symbol Device Min Typ** EMITTER Current Transfer Ratio (IF = 10 mA, VCE = 1 V) H11G1/2 100 (1000) CTR Collector to Emitter (IF = 1 mA, VCE = 5 V) Saturation Voltage mA (%) H11G1/2 5 (500) H11G3 2 (200) (IF = 16 mA, IC = 50 mA) H11G1/2 0.85 1.0 (IF = 1 mA, IC = 1 mA) VCE (SAT) H11G1/2 0.75 1.0 0.85 1.2 Typ** Max (IF = 20 mA, IC = 50 mA) H11G3 V TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Device (RL = 100 1, IF = 10 mA) ton ALL 5 (VCE = 5 V) Pulse Width 6300 µs, f 630 Hz) toff ALL 100 SWITCHING TIMES Turn-on Time Turn-off Time Min Unit µs ** All typical values at TA = 25°C 7/21/00 200045A HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 Fig. 2 Normalized Output Current vs. Temperature Fig. 1 Output Current vs. Input Current 100 1 Normalized to: VCE = 5 V IF = 1 mA 0.1 0.01 0.001 0.1 1 IC - NORMALIZED OUTPUT CURRENT IC - NORMALIZED OUTPUT CURRENT 10 IF = 50 mA 10 IF = 5 mA IF = 1 mA 1 IF = 0.5 mA 0.1 0.01 -60 10 -40 Fig. 3 Output Current vs. Collector - Emitter Voltage 0 20 40 60 80 100 120 90 100 Fig. 4 Collector-Emitter Dark Current vs. Ambient Temperature 1000 100 Normalized to: VCE = 5 V IF = 1 mA TA = 25˚C ICEO - DARK CURRENT (nA) IF = 50 mA IF = 10 mA IF = 2 mA IF = 1 mA 1 IF = 0.5 mA 0.1 VCE = 80V 100 VCE = 30V 10 VCE = 10V 1 0.1 0.01 0.01 1 0 10 10 20 30 40 50 60 70 80 TA - AMBIENT TEMPERATURE (˚C) VCE - COLLECTOR - EMITTER VOLTAGE (V) Fig. 5 Input Current vs. Total Switching Speed (Typical Values) 10 IF - FORWARD CURRENT (mA) IC - NORMALIZED OUTPUT CURRENT -20 TA - AMBIENT TEMPERATURE (˚C) IF - LED INPUT CURRENT(mA) 10 Normalized to: VCE = 5 V IF = 1 mA TA = 25˚C RL = 10 Ω RL = 100 Ω RL = 1k Ω 1 Normalized to: VCC = 5 V IF = 10 mA RL = 100 Ω 0.1 0.1 1 10 ton + toff - TOTAL SWITCHING SPEED (NORMALIZED) 7/21/00 200045A HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 Package Dimensions (Through Hole) 3 2 1 Package Dimensions (Surface Mount) 0.350 (8.89) 0.330 (8.38) PIN 1 ID. 3 2 PIN 1 ID. 1 0.270 (6.86) 0.240 (6.10) 0.270 (6.86) 0.240 (6.10) SEATING PLANE 4 5 6 0.350 (8.89) 0.330 (8.38) 4 5 0.070 (1.78) 0.045 (1.14) 6 0.300 (7.62) TYP 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.200 (5.08) 0.165 (4.18) 0.016 (0.41) 0.008 (0.20) 0.020 (0.51) MIN 0.154 (3.90) 0.100 (2.54) 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0° to 15° 0.100 (2.54) TYP 0.300 (7.62) TYP 0.100 (2.54) TYP 2 1 Recommended Pad Layout for Surface Mount Leadform PIN 1 ID. 5 0.070 (1.78) 0.060 (1.52) 6 SEATING PLANE 0.350 (8.89) 0.330 (8.38) 0.415 (10.54) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.315 (8.00) MIN 0.405 (10.30) MAX 0.270 (6.86) 0.240 (6.10) 4 0.016 (0.40) MIN Lead Coplanarity : 0.004 (0.10) MAX Package Dimensions (0.4”Lead Spacing) 3 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) 0.295 (7.49) 0.030 (0.76) 0.004 (0.10) MIN 0.154 (3.90) 0.100 (2.54) 0.016 (0.40) 0.008 (0.20) 0° to 15° 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.400 (10.16) TYP NOTE All dimensions are in inches (millimeters) 7/21/00 200045A HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1, H11G2, H11G3 ORDERING INFORMATION Order Entry Identifier Option S .S Description Surface Mount Lead Bend SD .SD Surface Mount; Tape and reel W .W 0.4” Lead Spacing 300 .300 VDE 0884 300W .300W VDE 0884, 0.4” Lead Spacing 3S .3S VDE 0884, Surface Mount 3SD .3SD VDE 0884, Surface Mount, Tape & Reel QT Carrier Tape Specifications (“D” Taping Orientation) 12.0 ± 0.1 4.85 ± 0.20 4.0 ± 0.1 0.30 ± 0.05 4.0 ± 0.1 Ø1.55 ± 0.05 1.75 ± 0.10 7.5 ± 0.1 16.0 ± 0.3 13.2 ± 0.2 9.55 ± 0.20 0.1 MAX 10.30 ± 0.20 Ø1.6 ± 0.1 User Direction of Feed NOTE All dimensions are in millimeters 7/21/00 200045A MARKING INFORMATION 1 H11G1 2 V XX YY K 6 3 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code Reflow Profile (Black Package, No Suffix) Temperature (°C) 300 215°C, 10–30 s 250 225 C peak 200 150 Time above 183°C, 60–150 sec 100 50 Ramp up = 3C/sec 0 0 0.5 1 1.5 2 2.5 Time (Minute) 3 3.5 4 4.5 • Peak reflow temperature: 225°C (package surface temperature) • Time of temperature higher than 183°C for 60–150 seconds • One time soldering reflow is recommended TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13