Renesas H5N2007FN Silicon n channel mos fet high speed power switching Datasheet

H5N2007FN
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0370-0100Z
Rev.1.00
May.28.2004
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-220FN
D
1. Gate
2. Drain
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, May.28.2004, page 1 of 7
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
25
100
25
100
9
5.4
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
H5N2007FN
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Min
200
—
—
3.0
13
—
Typ
—
—
—
—
22
0.036
Max
—
1
±0.1
4.0
—
0.047
Unit
V
µA
µA
V
S
Ω
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 12.5 A, VDS = 10 V Note4
ID = 12.5 A, VGS = 10 VNote4
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
2200
410
54
35
120
110
85
56
13
26
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS = 25 V
VGS = 0
f = 1 MHz
VDD = 160 V
VGS = 10 V
ID = 25 A
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
VDF
trr
Qrr
—
—
—
0.9
140
0.7
1.5
—
—
V
ns
µC
IF = 25 A, VGS = 0 Note4
IF = 25 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00, May.28.2004, page 2 of 7
ID = 12.5 A
VGS = 10 V
RL = 8 Ω
Rg = 10 Ω
H5N2007FN
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
30
20
10
ID (A)
300
100
Drain Current
Channel Dissipation
Pch (W)
40
10
30
DC
50
100
Case Temperature
er
3
s(
at
ion
1s
(T
c=
1
0.3 Operation in
ho
t)
25
°C
)
this area is
0.1 limited by RDS(on)
150
200
Tc (°C)
Ta = 25°C
0.01
0.1 0.3 1 3
10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
100
100
10 V
VDS = 10 V
Pulse Test
Pulse Test
8V
7V
ID (A)
80
60
6V
40
20
Drain Current
ID (A)
Op
0.03
0
Drain Current
10
µ
0µ s
1m
=
s
10
m s
10
PW
VGS = 5 V
0
4
8
12
Drain to Source Voltage
4
3
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage
VDS(on) (V)
Pulse Test
60
40
20
Tc = 75°C
0
16
20
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
80
25°C
–25°C
2
4
6
Gate to Source Voltage
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
VGS = 10 V
0.1
0.05
2
I D = 45 A
1
22.5 A
12.5 A
0
0.02
0.01
12
4
8
Gate to Source Voltage
Rev.1.00, May.28.2004, page 3 of 7
16
20
VGS (V)
1
2
5
10 20
50
Drain Current ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.200
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
H5N2007FN
V GS = 10 V
0.160
0.120
22.5 A
I D = 45 A
0.080
0.040
12.5 A
0
–40
0
40
80
120
Case Temperature Tc (°C)
100
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
V DS = 10 V
Pulse Test
0.5
0.2
0.2
160
0.5 1
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Reverse Recovery Time trr (ns)
50
20
10
0.1
2000
1000
500
Coss
200
100
Crss
50
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
10
0
20
40
60
80
100
Drain to Source Voltage VDS (V)
20
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
V DS = 50 V
100 V
160 V
VGS
300
16
12
8
VDD
V DS = 160 V
100 V
50 V
20
40
Gate Charge
Rev.1.00, May.28.2004, page 4 of 7
60
80
Qg (nC)
4
0
100
Switching Characteristics
10000
Switching Time t (ns)
I D = 45 A
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
VGS (V)
Dynamic Input Characteristics
0
ID (A)
Ciss
100
100
Drain Current
50 100
5000
200
200
10 20
10000
500
400
5
Typical Capacitance vs.
Drain to Source Voltage
1000
500
2
V GS = 10 V, V DD = 100 V
PW = 5 µs, duty < 1 %
R G =10 Ω
1000
tf
tr
t d(off)
100
tf
t d(on)
10
0.1
tr
0.3
1
3
Drain Current
10
30
ID (A)
100
H5N2007FN
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
V GS(off) (V)
Reverse Drain Current
IDR (A)
100
80
60
V GS = 0 V
40
10 V
20
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
V DS = 10 V
4
I D = 10mA
3
1mA
0.1mA
2
1
0
-50
2.0
0
50
100
Case Temperature
VSD (V)
150
200
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
1
0.0
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17°C/W, Tc = 25°C
ho
tp
ul
se
0.01
PDM
1s
Normalized Transient Thermal Impedance γ s (t)
1
D=
0.003
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
Pulse Width
Rev.1.00, May.28.2004, page 5 of 7
100 m
PW (s)
1
10
H5N2007FN
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 100 V
Vout
10%
10%
90%
td(on)
Rev.1.00, May.28.2004, page 6 of 7
tr
10%
90%
td(off)
tf
H5N2007FN
Package Dimensions
TO-220FN
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
2.0
Cu alloy
2.8 ± 0.2
φ3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
3 ± 0.3
6.5 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
2.54 ± 0.25
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Ordering Information
Part Name
Quantity
Shipping Container
H5N2007FN-E
50 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, May.28.2004, page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0