Intersil HA5013 Triple, 125mhz video amplifier Datasheet

HA5013
Data Sheet
September 1998
File Number
3654.4
Triple, 125MHz Video Amplifier
Features
The HA5013 is a low cost triple amplifier optimized for RGB
video applications and gains between 1 and 10. It is a
current feedback amplifier and thus yields less bandwidth
degradation at high closed loop gains than voltage feedback
amplifiers.
• Wide Unity Gain Bandwidth . . . . . . . . . . . . . . . . . 125MHz
The low differential gain and phase, 0.1dB gain flatness, and
ability to drive two back terminated 75Ω cables, make this
amplifier ideal for demanding video applications.
• Differential Phase . . . . . . . . . . . . . . . . . . . . 0.03 Degrees
• Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 475V/µs
• Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . 800µV
• Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.03%
• Supply Current (Per Amplifier) . . . . . . . . . . . . . . . . 7.5mA
• ESD Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V
The current feedback design allows the user to take
advantage of the amplifier’s bandwidth dependency on the
feedback resistor.
The performance of the HA5013 is very similar to the
popular Intersil HA-5020 single video amplifier.
• Guaranteed Specifications at ±5V Supplies
• Low Cost
Applications
• PC Add-On Multimedia Boards
Pinout
• Flash A/D Driver
HA5013
(PDIP, SOIC)
TOP VIEW
• Color Image Scanners
• CCD Cameras and Systems
NC
1
14 OUT2
NC
2
NC
3
12 +IN2
V+
4
11 V-
+IN1
5
10 +IN3
-IN1
6
9 -IN3
OUT1
7
8 OUT3
+-
+
+
13 -IN2
-
• RGB Cable Driver
• RGB Video Preamp
• PC Video Conferencing
Ordering Information
PART NUMBER
PACKAGE
PKG.
NO.
HA5013IP
-40 to 85
14 Ld PDIP
E14.3
HA5013IB
-40 to 85
14 Ld SOIC
M14.15
-
HA5025EVAL
1
TEMP.
RANGE (oC)
High Speed Op Amp DIP Evaluation Board
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HA5013
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 36V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±VSUPPLY
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Output Current (Note 2) . . . . . . . . . . . . . . . . Short Circuit Protected
ESD Rating (Note 4)
Human Body Model (Per MIL-STD-883 Method 3015.7) . . . . 2000V
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
Maximum Junction Temperature (Die Only, Note 3) . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package, Note 3) . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
Supply Voltage Range (Typical) . . . . . . . . . . . . . . . . . ±4.5V to ±15V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. Output is protected for short circuits to ground. Brief short circuits to ground will not degrade reliability, however, continuous (100% duty cycle)
output current should not exceed 15mA for maximum reliability.
3. Maximum power dissipation, including output load, must be designed to maintain junction temperature below 175oC for die, and below 150oC
for plastic packages. See Application Information section for safe operating area information.
4. The non-inverting input of unused amplifiers must be connected to GND.
VSUPPLY = ±5V, RF = 1kΩ, AV = +1, RL = 400Ω, CL ≤10pF, Unless Otherwise Specified
Electrical Specifications
(NOTE 9)
TEST
LEVEL
TEMP.
(oC)
MIN
TYP
MAX
UNITS
A
25
-
0.8
3
mV
A
Full
-
-
5
mV
Delta VIO Between Channels
A
Full
-
1.2
3.5
mV
Average Input Offset Voltage Drift
B
Full
-
5
-
µV/oC
A
25
53
-
-
dB
A
Full
50
-
-
dB
A
25
60
-
-
dB
A
Full
55
-
-
dB
A
Full
±2.5
-
-
V
A
25
-
3
8
µA
A
Full
-
-
20
µA
A
25
-
-
0.15
µA/V
A
Full
-
-
0.5
µA/V
A
25
-
-
0.1
µA/V
A
Full
-
-
0.3
µA/V
A
25, 85
-
4
12
µA
A
-40
-
10
30
µA
A
25, 85
-
6
15
µA
A
-40
-
10
30
µA
PARAMETER
TEST CONDITIONS
INPUT CHARACTERISTICS
Input Offset Voltage (VIO)
VIO Common Mode Rejection Ratio
VIO Power Supply Rejection Ratio
VCM = ±2.5V (Note 5)
±3.5V ≤ VS ≤ ±6.5V
VCM = ±2.5V (Note 5)
Input Common Mode Range
Non-Inverting Input (+IN) Current
+IN Common Mode Rejection
(+IBCMR =
1
+RIN
VCM = ±2.5V (Note 5)
)
±3.5V ≤ VS ≤ ±6.5V
+IN Power Supply Rejection
Inverting Input (-IN) Current
Delta - IN BIAS Current Between Channels
2
HA5013
VSUPPLY = ±5V, RF = 1kΩ, AV = +1, RL = 400Ω, CL ≤10pF, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
TEST CONDITIONS
VCM = ±2.5V (Note 5)
-IN Common Mode Rejection
±3.5V ≤ VS ≤ ±6.5V
-IN Power Supply Rejection
(NOTE 9)
TEST
LEVEL
TEMP.
(oC)
MIN
TYP
MAX
UNITS
A
25
-
-
0.4
µA/V
A
Full
-
-
1.0
µA/V
A
25
-
-
0.2
µA/V
A
Full
-
-
0.5
µA/V
Input Noise Voltage
f = 1kHz
B
25
-
4.5
-
nV/√Hz
+Input Noise Current
f = 1kHz
B
25
-
2.5
-
pA/√Hz
-Input Noise Current
f = 1kHz
B
25
-
25.0
-
pA/√Hz
VOUT = ±2.5V (Note 11)
A
25
1.0
-
-
MΩ
A
Full
0.85
-
-
MΩ
A
25
70
-
-
dB
A
Full
65
-
-
dB
A
25
50
-
-
dB
A
Full
45
-
-
dB
A
25
±2.5
±3.0
-
V
A
Full
±2.5
±3.0
-
V
TRANSFER CHARACTERISTICS
Transimpedence
RL = 400Ω, VOUT = ±2.5V
Open Loop DC Voltage Gain
RL = 100Ω, VOUT = ±2.5V
Open Loop DC Voltage Gain
OUTPUT CHARACTERISTICS
Output Voltage Swing
RL = 150Ω
Output Current
RL = 150Ω
B
Full
±16.6
±20.0
-
mA
Short Circuit Output Current
VIN = ±2.5V, VOUT = 0V
A
Full
±40
±60
-
mA
Supply Voltage Range
A
25
5
-
15
V
Quiescent Supply Current
A
Full
-
7.5
10
mA/Op Amp
B
25
275
350
-
V/µs
B
25
22
28
-
MHz
POWER SUPPLY CHARACTERISTICS
AC CHARACTERISTICS AV = +1
Slew Rate
Note 6
Full Power Bandwidth (Note 7)
Rise Time (Note 8)
VOUT = 1V, RL = 100Ω
B
25
-
6
-
ns
Fall Time (Note 8)
VOUT = 1V, RL = 100Ω
B
25
-
6
-
ns
Propagation Delay (Note 8)
VOUT = 1V, RL = 100Ω
B
25
-
6
-
ns
B
25
-
4.5
-
%
Overshoot
-3dB Bandwidth
VOUT = 100mV
B
25
-
125
-
MHz
Settling Time
To 1%, 2V Output Step
B
25
-
50
-
ns
Settling Time
To 0.25%, 2V Output Step
B
25
-
75
-
ns
Note 6
B
25
-
475
-
V/µs
AC CHARACTERISTICS AV = +2, RF = 681Ω
Slew Rate
3
HA5013
VSUPPLY = ±5V, RF = 1kΩ, AV = +1, RL = 400Ω, CL ≤10pF, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
TEST CONDITIONS
Full Power Bandwidth (Note 7)
(NOTE 9)
TEST
LEVEL
TEMP.
(oC)
MIN
TYP
MAX
UNITS
B
25
-
26
-
MHz
Rise Time (Note 8)
VOUT = 1V, RL = 100Ω
B
25
-
6
-
ns
Fall Time (Note 8)
VOUT = 1V, RL = 100Ω
B
25
-
6
-
ns
Propagation Delay (Note 8)
VOUT = 1V, RL = 100Ω
B
25
-
6
-
ns
B
25
-
12
-
%
Overshoot
-3dB Bandwidth
VOUT = 100mV
B
25
-
95
-
MHz
Settling Time
To 1%, 2V Output Step
B
25
-
50
-
ns
Settling Time
To 0.25%, 2V Output Step
B
25
-
100
-
ns
Gain Flatness
5MHz
B
25
-
0.02
-
dB
20MHz
B
25
-
0.07
-
dB
Note 6
B
25
350
475
-
V/µs
B
25
28
38
-
MHz
AC CHARACTERISTICS AV = +10, RF = 383Ω
Slew Rate
Full Power Bandwidth (Note 7)
Rise Time (Note 8)
VOUT = 1V, RL = 100Ω
B
25
-
8
-
ns
Fall Time (Note 8)
VOUT = 1V, RL = 100Ω
B
25
-
9
-
ns
Propagation Delay (Note 8)
VOUT = 1V, RL = 100Ω
B
25
-
9
-
ns
B
25
-
1.8
-
%
Overshoot
-3dB Bandwidth
VOUT = 100mV
B
25
-
65
-
MHz
Settling Time
To 1%, 2V Output Step
B
25
-
75
-
ns
To 0.1%, 2V Output Step
B
25
-
130
-
ns
Differential Gain
RL = 150Ω, (Note 10)
B
25
-
0.03
-
%
Differential Phase
RL = 150Ω, (Note 10)
B
25
-
0.03
-
Degrees
VIDEO CHARACTERISTICS
NOTES:
5. At -40oC Product is tested at VCM = ±2.25V because Short Test Duration does not allow self heating.
6. VOUT switches from -2V to +2V, or from +2V to -2V. Specification is from the 25% to 75% points.
Slew Rate
7. FPBW = ----------------------------- ; V
= 2V .
2πV PEAK PEAK
8. Measured from 10% to 90% points for rise/fall times; from 50% points of input and output for propagation delay.
9. A. Production Tested; B. Typical or Guaranteed Limit based on characterization; C. Design Typical for information only.
10. Measured with a VM700A video tester using an NTC-7 composite VITS.
11. At -40oC Product is tested at VOUT = ±2.25V because Short Test Duration does not allow self heating.
4
HA5013
Test Circuits and Waveforms
+
DUT
50Ω
HP4195
NETWORK
ANALYZER
50Ω
FIGURE 1. TEST CIRCUIT FOR TRANSIMPEDANCE MEASUREMENTS
(NOTE 12)
100Ω
(NOTE 12)
100Ω
VIN
+
VIN
DUT
VOUT
-
50Ω
RL
100Ω
+
DUT
VOUT
-
50Ω
RI
681Ω
RF, 681Ω
RL
400Ω
RF, 1kΩ
FIGURE 2. SMALL SIGNAL PULSE RESPONSE CIRCUIT
FIGURE 3. LARGE SIGNAL PULSE RESPONSE CIRCUIT
NOTE:
12. A series input resistor of ≥100Ω is recommended to limit input currents in case input signals are present before the HA5013 is powered up.
Vertical Scale: VIN = 100mV/Div., VOUT = 100mV/Div.
Horizontal Scale: 20ns/Div.
Vertical Scale: VIN = 1V/Div., VOUT = 1V/Div.
Horizontal Scale: 50ns/Div.
FIGURE 4. SMALL SIGNAL RESPONSE
FIGURE 5. LARGE SIGNAL RESPONSE
5
Schematic
(One Amplifier of Three)
V+
R10
820
R5
2.5K
R2
800
QP8
R19
400
R15
400
QP9
QP11
QP1
QP5
QP14
R11
1K
R17
280
QN5
R24
140
6
QP10
C1
1.4pF
R28
20
QP6
-IN
R12
280
QP4
QP17
QN13
+IN
QN17
R25
20
C2
1.4pF
QN15
QN2
R21
140
QN10
QN3
R14
280
QP7
QN4
R22
280
QN14
R16
400
QN21
R25
140
QN16
R13
1K
QN7
HA5013
QP13
R3
6K
D1
QP20
QP12
QN6
QN1
QP16
R20
140
QP15
QN8
QP2
R1
60K
QP19
R31
5
R18
280
QN12
R29
9.5
R27
200
QN18
R23
R26
400
200
R32
5
QN19
R30
7
OUT
R4
800
V-
R33
800
R9
820
QN9
QN11
HA5013
Application Information
as short as possible to minimize the capacitance from this
node to ground.
Optimum Feedback Resistor
The plots of inverting and non-inverting frequency response,
see Figure 8 and Figure 9 in the typical performance section,
illustrate the performance of the HA5013 in various closed loop
gain configurations. Although the bandwidth dependency on
closed loop gain isn’t as severe as that of a voltage feedback
amplifier, there can be an appreciable decrease in bandwidth at
higher gains. This decrease may be minimized by taking
advantage of the current feedback amplifier’s unique
relationship between bandwidth and RF. All current feedback
amplifiers require a feedback resistor, even for unity gain
applications, and RF, in conjunction with the internal
compensation capacitor, sets the dominant pole of the
frequency response. Thus, the amplifier’s bandwidth is
inversely proportional to RF. The HA5013 design is optimized
for a 1000Ω RF at a gain of +1. Decreasing RF in a unity gain
application decreases stability, resulting in excessive peaking
and overshoot. At higher gains the amplifier is more stable, so
RF can be decreased in a trade-off of stability for bandwidth.
The table below lists recommended RF values for various
gains, and the expected bandwidth.
GAIN
(ACL)
RF (Ω)
BANDWIDTH
(MHz)
-1
750
100
+1
1000
125
+2
68f1
95
+5
1000
52
+10
383
65
-10
750
22
Driving Capacitive Loads
Capacitive loads will degrade the amplifier’s phase margin
resulting in frequency response peaking and possible
oscillations. In most cases the oscillation can be avoided by
placing an isolation resistor (R) in series with the output as
shown in Figure 6.
100Ω
VIN
R
+
VOUT
CL
RT
RF
RI
FIGURE 6. PLACEMENT OF THE OUTPUT ISOLATION
RESISTOR, R
The selection criteria for the isolation resistor is highly
dependent on the load, but 27Ω has been determined to be
a good starting value.
Power Dissipation Considerations
Due to the high supply current inherent in triple amplifiers,
care must be taken to insure that the maximum junction
temperature (TJ , see Absolute Maximum Ratings) is not
exceeded. Figure 7 shows the maximum ambient
temperature versus supply voltage for the available package
styles (PDIP, SOIC). At VS = ±5V quiescent operation both
package styles may be operated over the full industrial range
of -40oC to 85oC. It is recommended that thermal
calculations, which take into account output power, be
performed by the designer.
PC Board Layout
Attention must be given to decoupling the power supplies. A
large value (10µF) tantalum or electrolytic capacitor in
parallel with a small value (0.1µF) chip capacitor works well
in most cases.
130
MAX. AMBIENT TEMPERATURE (oC)
The frequency response of this amplifier depends greatly on
the amount of care taken in designing the PC board. The
use of low inductance components such as chip resistors
and chip capacitors is strongly recommended. If leaded
components are used the leads must be kept short
especially for the power supply decoupling components and
those components connected to the inverting input.
120
100
90
7
SOIC
80
70
60
50
40
30
20
10
A ground plane is strongly recommended to control noise.
Care must also be taken to minimize the capacitance to
ground seen by the amplifier’s inverting input (-IN). The
larger this capacitance, the worse the gain peaking, resulting
in pulse overshoot and possible instability. It is
recommended that the ground plane be removed under
traces connected to -IN, and that connections to -IN be kept
PDIP
110
5
7
9
11
13
15
SUPPLY VOLTAGE (±V)
FIGURE 7. MAXIMUM OPERATING AMBIENT TEMPERATURE
vs SUPPLY VOLTAGE
HA5013
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
Unless Otherwise Specified
5
5
VOUT = 0.2VP-P
CL = 10pF
AV = +1, RF = 1kΩ
3
AV = 2, RF = 681Ω
2
AV = 5, RF = 1kΩ
1
0
-1
-2
-3
3
AV = -1
2
1
AV = -2
0
-1
-2
AV = -10
-3
AV = 10, RF = 383Ω
-4
AV = -5
-4
-5
-5
10
FREQUENCY (MHz)
100
200
2
+90
AV = -1, RF = 750Ω
+45
AV = +10, RF = 383Ω
-100
0
-225
-45
-270
-90
AV = -10, RF = 750Ω
-315
-135
VOUT = 0.2VP-P
CL = 10pF
2
-180
10
100
140
VOUT = 0.2VP-P
CL = 10pF
AV = +1
130
-3dB BANDWIDTH
120
5
GAIN PEAKING
200
500
700
FIGURE 10. PHASE RESPONSE AS A FUNCTION OF
FREQUENCY
1100
1300
0
1500
FIGURE 11. BANDWIDTH AND GAIN PEAKING vs FEEDBACK
RESISTANCE
130
VOUT = 0.2VP-P
CL = 10pF
AV = +2
95
-3dB BANDWIDTH
90
10
5
GAIN PEAKING
500
650
800
950
FEEDBACK RESISTOR (Ω)
0
1100
FIGURE 12. BANDWIDTH AND GAIN PEAKING vs FEEDBACK
RESISTANCE
8
-3dB BANDWIDTH (MHz)
100
GAIN PEAKING (dB)
-3dB BANDWIDTH (MHz)
900
FEEDBACK RESISTOR (Ω)
FREQUENCY (MHz)
350
10
120
-3dB BANDWIDTH
110
6
100
4
90
GAIN PEAKING
VOUT = 0.2VP-P
CL = 10pF
AV = +1
80
0
200
400
600
800
2
0
1000
LOAD RESISTOR (Ω)
FIGURE 13. BANDWIDTH AND GAIN PEAKING vs LOAD
RESISTANCE
GAIN PEAKING (dB)
-360
-3dB BANDWIDTH (MHz)
+180
+135
-45
-135
200
FIGURE 9. INVERTING FREQUENCY RESPONSE
INVERTING PHASE (DEGREES)
AV = +1, RF = 1kΩ
-90
100
FREQUENCY (MHz)
FIGURE 8. NON-INVERTING FREQUENCY RESPONSE
0
10
GAIN PEAKING (dB)
2
NON-INVERTING PHASE (DEGREES)
VOUT = 0.2VP-P
CL = 10pF
RF = 750Ω
4
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
4
HA5013
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
Unless Otherwise Specified (Continued)
16
VOUT = 0.1VP-P
CL = 10pF
VOUT = 0.2VP-P
CL = 10pF
AV = +10
60
OVERSHOOT (%)
-3dB BANDWIDTH (MHz)
80
40
VSUPPLY = ±5V, AV = +2
12
VSUPPLY = ±15V, AV = +2
6
20
VSUPPLY = ±5V, AV = +1
VSUPPLY = ±15V, AV = +1
0
0
200
350
500
650
FEEDBACK RESISTOR (Ω)
800
0
950
800
1000
0.08
0.08
RL = 75Ω
0.06
RL = 150Ω
0.04
FREQUENCY = 3.58MHz
DIFFERENTIAL PHASE (DEGREES)
FREQUENCY = 3.58MHz
0.02
0.06
0.04
RL = 150Ω
RL = 75Ω
0.02
RL = 1kΩ
RL = 1kΩ
3
5
7
9
11
13
0.00
15
3
5
7
9
11
SUPPLY VOLTAGE (±V)
SUPPLY VOLTAGE (±V)
FIGURE 16. DIFFERENTIAL GAIN vs SUPPLY VOLTAGE
VOUT = 2.0VP-P
CL = 30pF
0
REJECTION RATIO (dB)
HD2
-60
3RD ORDER IMD
HD2
HD3
AV = +1
-20
-30
-40
-50
CMRR
-60
-70
-80
NEGATIVE PSRR
-80
POSITIVE PSRR
HD3
-90
0.3
15
-10
-50
-70
13
FIGURE 17. DIFFERENTIAL PHASE vs SUPPLY VOLTAGE
-40
DISTORTION (dBc)
600
FIGURE 15. SMALL SIGNAL OVERSHOOT vs LOAD
RESISTANCE
0.10
0.00
400
LOAD RESISTANCE (Ω)
FIGURE 14. BANDWIDTH vs FEEDBACK RESISTANCE
DIFFERENTIAL GAIN (%)
200
1
FREQUENCY (MHz)
FIGURE 18. DISTORTION vs FREQUENCY
9
10
0.001
0.01
0.1
1
FREQUENCY (MHz)
10
FIGURE 19. REJECTION RATIOS vs FREQUENCY
30
HA5013
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
Unless Otherwise Specified (Continued)
12
RL = 100Ω
VOUT = 1.0VP-P
AV = +1
RLOAD = 100Ω
VOUT = 1.0VP-P
PROPAGATION DELAY (ns)
PROPAGATION DELAY (ns)
8.0
7.5
7.0
6.5
AV = +10, RF = 383Ω
8
AV = +2, RF = 681Ω
6
AV = +1, RF = 1kΩ
4
6.0
-50
-25
0
25
50
75
TEMPERATURE (oC)
100
3
125
FIGURE 20. PROPAGATION DELAY vs TEMPERATURE
5
7
9
11
SUPPLY VOLTAGE (±V)
13
15
FIGURE 21. PROPAGATION DELAY vs SUPPLY VOLTAGE
0.8
500
VOUT = 2VP-P
NORMALIZED GAIN (dB)
+ SLEW RATE
400
VOUT = 0.2VP-P
CL = 10pF
0.6
450
SLEW RATE (V/µs)
10
350
- SLEW RATE
300
250
200
0.4
0.2
AV = +2, RF = 681Ω
0
-0.2
-0.4
AV = +5, RF = 1kΩ
-0.6
AV = +1, RF = 1kΩ
-0.8
150
-1.0
100
-1.2
-50
-25
0
25
50
75
100
AV = +10, RF = 383Ω
5
125
10
TEMPERATURE (oC)
15
20
FREQUENCY (MHz)
25
30
FIGURE 23. NON-INVERTING GAIN FLATNESS vs FREQUENCY
FIGURE 22. SLEW RATE vs TEMPERATURE
0.8
VOUT = 0.2VP-P
CL = 10pF
RF = 750Ω
AV = +10, RF = 383Ω
0.2
AV = -1
0
-0.2
-0.4
-0.6
AV = -5
-0.8
-1.0
-1.2
10
800
600
60
+INPUT NOISE CURRENT
400
40
INPUT NOISE VOLTAGE
200
20
AV = -2
AV = -10
5
-INPUT NOISE CURRENT
80
15
20
25
30
FREQUENCY (MHz)
FIGURE 24. INVERTING GAIN FLATNESS vs FREQUENCY
10
0
0.01
0.1
1
10
0
100
FREQUENCY (kHz)
FIGURE 25. INPUT NOISE CHARACTERISTICS
CURRENT NOISE (pA/√Hz)
0.4
1000
100
VOLTAGE NOISE (nV/√Hz)
NORMALIZED GAIN (dB)
0.6
HA5013
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
Unless Otherwise Specified (Continued)
1.5
BIAS CURRENT (µA)
2
VIO (mV)
1.0
0.5
0.0
-60
0
-2
-4
-40
-20
0
20
40
60
80
100
120
-60
140
-40
-20
0
TRANSIMPEDANCE (kΩ)
BIAS CURRENT (µA)
60
80
100
120
140
4000
22
20
18
16
-60
-40
-20
0
20
40
60
80
100
120
3000
2000
1000
-60
140
-40
-20
0
TEMPERATURE (oC)
20
40
60
80
100
120
140
TEMPERATURE (oC)
FIGURE 28. -INPUT BIAS CURRENT vs TEMPERATURE
FIGURE 29. TRANSIMPEDANCE vs TEMPERATURE
74
25
20
REJECTION RATIO (dB)
55oC
15
10
4
5
6
7
70
68
-PSRR
66
64
62
CMRR
60
25oC
3
+PSRR
72
125oC
ICC (mA)
40
FIGURE 27. +INPUT BIAS CURRENT vs TEMPERATURE
FIGURE 26. INPUT OFFSET VOLTAGE vs TEMPERATURE
5
20
TEMPERATURE (oC)
TEMPERATURE (oC)
8
9
10
11
12
13
14
SUPPLY VOLTAGE (±V)
FIGURE 30. SUPPLY CURRENT vs SUPPLY VOLTAGE
11
15
58
-100
-50
0
50
100
150
200
TEMPERATURE (oC)
FIGURE 31. REJECTION RATIO vs TEMPERATURE
250
HA5013
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
Unless Otherwise Specified (Continued)
4.0
+10V
30
+15V
+5V
OUTPUT SWING (V)
SUPPLY CURRENT (mA)
40
20
3.8
10
3.6
0
0
1
2
3
4
5
6
7
8
9
-60
10 11 12 13 14 15
-40
-20
0
20
40
60
80
100
120
140
TEMPERATURE (oC)
DISABLE INPUT VOLTAGE (V)
FIGURE 32. SUPPLY CURRENT vs DISABLE INPUT VOLTAGE
FIGURE 33. OUTPUT SWING vs TEMPERATURE
30
1.2
VS = ±15V
1.1
VIO (mV)
VOUT (VP-P)
20
VS = ±10V
1.0
10
0.9
VS = ±4.5V
0
0.01
0.10
1.00
0.8
-60
10.00
-40
-20
LOAD RESISTANCE (kΩ)
FIGURE 34. OUTPUT SWING vs LOAD RESISTANCE
0
40
60
80
20
TEMPERATURE (oC)
100
120
140
FIGURE 35. INPUT OFFSET VOLTAGE CHANGE BETWEEN
CHANNELS vs TEMPERATURE
-30
1.5
-40
SEPARATION (dB)
∆BIAS CURRENT (µA)
AV = +1
VOUT = 2VP-P
1.0
0.5
-50
-60
-70
0.0
-60
-40
-20
0
20
40
60
80
TEMPERATURE (oC)
100
120
FIGURE 36. INPUT BIAS CURRENT CHANGE BETWEEN
CHANNELS vs TEMPERATURE
12
140
-80
0.1
1
FREQUENCY (MHz)
10
FIGURE 37. CHANNEL SEPARATION vs FREQUENCY
30
HA5013
Typical Performance Curves
-20
-30
-40
-50
10
RL = 100Ω
1
0.1
0.01
180
0.001
135
90
45
-60
0
-70
-45
-80
-90
1
FREQUENCY (MHz)
10
0.001
20
0.01
1
10
-135
100
FREQUENCY (MHz)
FIGURE 38. DISABLE FEEDTHROUGH vs FREQUENCY
FIGURE 39. TRANSIMPEDANCE vs FREQUENCY
10
RL = 400Ω
1
0.1
0.01
180
0.001
135
90
45
0
-45
-90
-135
0.001
0.01
0.1
1
10
100
FREQUENCY (MHz)
FIGURE 40. TRANSIMPEDENCE vs FREQUENCY
13
0.1
PHASE ANGLE (DEGREES)
0.1
PHASE ANGLE (DEGREES)
DISABLE = 0V
VIN = 5VP-P
RF = 750Ω
TRANSIMPEDANCE (MΩ)
FEEDTHROUGH (dB)
-10
TRANSIMPEDANCE (MΩ)
0
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
Unless Otherwise Specified (Continued)
HA5013
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
2010µm x 3130µm x 483µm
Type: Nitride
Thickness: 4kÅ ±0.4kÅ
METALLIZATION:
TRANSISTOR COUNT:
Type: Metal 1: AlCu (1%)
Thickness: Metal 1: 8kÅ ±0.4kÅ
248
Type: Metal 2: AlCu (1%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
PROCESS:
High Frequency Bipolar Dielectric Isolation
SUBSTRATE POTENTIAL
Unbiased
Metallization Mask Layout
HA5013
NC
NC
OUT2
-IN2
NC
+IN2
V+
V-
+IN1
+IN3
-IN1
OUT1
OUT3
-IN3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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