Hitachi HAT2051T Silicon n channel power mos fet high speed power switching Datasheet

HAT2051T
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-661A (Z)
2nd. Edition
February 1999
Features
•
•
•
•
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
TSSOP–8
87
8
D
1
D
4
G
65
12
34
5
G
S S
2 3
MOS1
S S
6 7
MOS2
1, 8
Drain
2, 3, 6, 7 Source
4, 5
Gate
HAT2051T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
± 10
V
Drain current
ID
1
A
4
A
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
1
A
Pch
Note2
0.8
W
Channel dissipation
Pch
Note3
1.2
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Channel dissipation
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
± 10
—
—
V
I G = ± 100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
± 10
µA
VGS = ± 8 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.75
—
1.75
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
0.14
0.2
Ω
I D = 0.5 A, VGS = 10 V Note4
resistance
RDS(on)
—
0.2
0.3
Ω
I D = 0.5 A, VGS = 4 V Note4
Forward transfer admittance
|yfs|
1.4
2.2
—
S
I D = 0.5 A, VDS = 10 V Note4
Input capacitance
Ciss
—
155
—
pF
VDS = 10 V
Output capacitance
Coss
—
75
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
35
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
12
—
ns
VGS = 4 V, ID = 0.5 A
Rise time
tr
—
30
—
ns
VDD ≅ 10 V
Turn-off delay time
t d(off)
—
35
—
ns
Fall time
tf
—
25
—
ns
Body–drain diode forward voltage
VDF
—
0.81
1.1
V
I F = 1 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
t rr
—
35
—
ns
I F = 1 A, VGS = 0
diF/ dt = 20 A/µs
Note:
2
4. Pulse test
HAT2051T
Main Characteristics
Power vs. Temperature Derating
10
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1
2
Dr
ive
O
pe
1D
0.5
Drain Current
Channel Dissipation
0.3
1.0
ra
riv
tio
eO
n
pe
rat
ion
0
50
100
150
Ambient Temperature
Maximum Safe Operation Area
3
I D (A)
Pch (W)
2.0
200
Ta (°C)
DC
PW
Op
1
=
10 µs
10
0
µs
m
s
10
m
s
er
ati
on
Operation in
(P
W N
this area is
< ote
0.03 limited by R
10 5
DS(on)
s)
0.01
Ta = 25°C
0.003 1 shot Pulse
1 Drive Operation
0.001
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
0.1
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
3
(A)
10V
5V
4V
2.5 V
ID
4
5
VGS = 2.0 V
Drain Current
Drain Current
I D (A)
5
2
1
Typical Transfer Characteristics
4
3
2
–25°C
Tc = 75°C
1
25°C
Pulse Test
0
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
V DS = 10 V
Pulse Test
4
V GS (V)
5
3
HAT2051T
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Pulse Test
0.4
0.3
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
ID=2A
0.2
1A
0.1
2
Pulse Test
1
0.5
2.5 V
0.2
0.1
VGS = 4 V
0.05
0.5 A
0.02
1
2
3
Gate to Source Voltage
5
0.4
I D = 2, 1, 0.5 A
0.3
VGS = 2.5 V
0.2
2, 1, 0.5 A
0.1
4V
0
–40
Pulse Test
0
40
0.2
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.5
80
Case Temperature
4
4
120
Tc
(°C)
160
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance
R DS(on) (Ω )
0
5
0.5
1
2
Drain Current
5
10
I D (A)
20
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
2
1
0.5
75 °C
25 °C
0.2
0.1
0.05
0.02
V DS = 10 V
Pulse Test
0.05 0.1
0.2
0.5
Drain Current I D (A)
1
2
HAT2051T
Body–Drain Diode Reverse
Recovery Time
1000
200
100
50
20
10
5
0.1
Ciss
100
Crss
10
3
1
0
0.2
0.5
1
2
5
10
Reverse Drain Current I DR (A)
20
6
4
V DD = 20 V
10 V
5V
10
0
2
4
Gate Charge
6
2
8
Qg (nc)
40
50
0
10
t d(off)
50
Switching Time t (ns)
V GS
V GS (V)
8
V DS
30
100
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
I D= 1 A
30
20
Switching Characteristics
10
V DD = 5 V
10 V
20 V
10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
40
Coss
30
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
50
VGS = 0
f = 1 MHz
300
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
Typical Capacitance vs.
Drain to Source Voltage
tf
20
tr
t d(on)
10
5
2
V GS = 4 V, V DD = 10 V
PW = 5 µs, duty < 1 %
1
0.01 0.02
0.05 0.1 0.2
0.5
Drain Current I D (A)
1
5
HAT2051T
Reverse Drain Current vs.
Souece to Drain Voltage
5
Reverse Drain Current I DR (A)
Pulse Test
4
3
2
5V
V GS = 0 V
1
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
γ s (t)
Normalized Transient Thermal Impedance
10
D=1
0.5
1
0.2
0.1
0.1
0.05
0.02
0.01 0.01
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
e
uls
p
ot
h
1s
PDM
0.001
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
6
10
100
1000
10000
HAT2051T
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
γ s (t)
Normalized Transient Thermal Impedance
10
D=1
0.5
1
0.2
0.1
0.1
0.05
0.02
0.01
0.01
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 225 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
e
uls
p
ot
h
1s
PDM
0.001
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
HAT2051T
Package Dimensions
Unit: mm
1
4
0.65
0.10
0.22
+0.08
–0.07
0.13 M
0.17 ± 0.05
6.40 ± 0.20
0.07 +0.03
–0.04
5
1.10 Max
8
4.40 ± 0.1
3.00 ± 0.1
0–8°
0.50 ± 0.10
Hitachi Code
EIAJ Code
JEDEC Code
8
TTP–8D
—
—
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