To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. HAT2116H Silicon N Channel Power MOS FET Power Switching REJ03G1189-0400 (Previous: ADE-208-1575B) Rev.4.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 6.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 12 1, 2, 3 4 5 34 S S S 1 2 3 Rev.4.00 Sep 07, 2005 page 1 of 6 Source Gate Drain HAT2116H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value 30 Unit V VGSS ID ±20 30 V A 120 30 A A 15 150 W °C –55 to +150 °C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel temperature Pch Tch Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25 °C Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 30 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS ±20 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 IDSS VGS (off) — 1.0 — — 1 2.5 µA V VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA RDS (on) RDS (on) — — 6.3 10.5 8.2 15.3 mΩ mΩ ID = 15 A, VGS = 10 V Note 3 ID = 15 A, VGS = 4.5 V Forward transfer admittance Input capacitance |yfs| Ciss 27 — 45 1650 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 400 220 — — pF pF ID = 15 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Gate to source charge Qg Qgs — — 26 5 — — nC nC Gate to drain charge Turn-on delay time Qgd td (on) — — 5 15 — — nC ns tr 55 48 — — ns ns Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Rise time Turn-off delay time td (off) — — Fall time Body-drain diode forward voltage tf VDF — — 11 0.85 — 1.11 ns V trr — 60 — ns Body-drain diode reverse recovery time Note: 3. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 6 Note 3 Note 3 VDD = 10 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A VDD ≅ 10 V RL = 0.5 Ω Rg = 4.7 Ω IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 50 A/µs Note 3 HAT2116H Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 500 10 µs 0µ 1m s P DC W s Op = 1 era 0 m s tio nT c Operation in =2 5° this area is C limited by RDS (on) ID (A) 100 30 Drain Current Channel Dissipation Pch (W) 40 20 10 10 10 1 0.1 Ta = 25°C 1 shot Pulse 0 0 50 100 Case Temperature 0.01 0.1 200 150 10 30 100 VDS (V) 50 Pulse Test 10 V (A) 4.5 V 40 3.5 V 40 ID 4V VDS = 10 V Pulse Test 30 30 20 Drain Current (A) 3 Typical Transfer Characteristics 50 ID 1 Drain to Source Voltage Tc (°C) Typical Output Characteristics Drain Current 0.3 VGS = 3 V 10 20 25°C Tc = 75°C 10 –25°C 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.16 0.12 0.08 ID = 10 A 0.04 5A 2A 0 0 4 8 12 Gate to Source Voltage Rev.4.00 Sep 07, 2005 page 3 of 6 16 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.20 1 100 Pulse Test 50 20 VGS = 4.5 V 10 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) HAT2116H 50 Pulse Test 40 30 ID = 2 A, 5 A 10 A 20 VGS = 4.5 V 10 2 A, 5 A, 10 A 10 V 0 –40 0 40 80 Case Temperature 120 Tc 160 100 Tc = –25°C 30 75°C 10 25°C 3 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 10 30 100 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 3 Typical Capacitance vs. Drain to Source Voltage 100 50 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 0.2 0.5 1 2 5 10 Reverse Drain Current 20 3000 Ciss 1000 10 50 12 8 20 10 4 VDD = 25 V 10 V 5V 0 0 20 40 Gate Charge Rev.4.00 Sep 07, 2005 page 4 of 6 60 80 Qg (nc) 10 20 30 40 50 0 100 200 Switching Time t (ns) VDD = 25 V 10 V 5V VDS VGS (V) 16 30 0 Switching Characteristics VGS 40 VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) IDR (A) 20 ID = 30 A Crss 100 30 Gate to Source Voltage 50 Coss 300 Dynamic Input Characteristics VDS (V) 1 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 0.3 100 td(off) 50 tf 20 tr td(on) 10 5 2 0.1 0.2 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.5 1 2 Drain Current 5 ID (A) 10 20 HAT2116H Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 Pulse Test 10 V 40 5V 30 VGS = 0 20 10 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 VSD (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 8.33°C/W, Tc = 25°C 0.1 0.05 0.03 0.02 1 0.0 D= PDM 1 sh 0.01 10 µ p ot uls e PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Waveform Switching Time Test Circuit 90% Vout Monitor Vin Monitor D.U.T. Rg Vin Vout Vin 10 V VDS = 10 V 10% 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 5 of 6 10% RL tr 90% td(off) tf HAT2116H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A Package Name MASS[Typ.] LFPAK Unit: mm 0.080g 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 0° – 8° +0.25 +0.05 0.20 –0.03 0.6 –0.20 1.3 Max 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name Quantity Shipping Container HAT2116H-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. 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