HAT2164H Silicon N Channel Power MOS FET Power Switching REJ03G0003-0500 Rev.5.00 Sep 26, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 3 12 4 G 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.5.00 Sep 26, 2005 page 1 of 7 Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings 30 ±20 60 240 60 Unit V V A A A IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg 30 90 30 4.17 150 –55 to +150 A mJ W °C/W °C °C HAT2164H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.5.00 Sep 26, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 ±20 — — 0.8 — — 78 — — — — — — — — — Typ — — — — — 2.5 3.0 130 7600 1050 470 0.5 50 22 10 18 60 Max — — ±10 1 2.3 3.1 4.4 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns — — — — 65 15 0.82 40 — — 1.07 — ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 30 A, VGS = 10 V Note4 ID = 30 A, VGS = 4.5 V Note4 ID = 30 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 60 A VGS = 10 V, ID = 30 A, VDD ≅ 10 V, RL = 0.33 Ω, Rg = 4.7 Ω IF = 60 A, VGS = 0 Note4 IF = 60 A, VGS = 0 diF/ dt = 100 A/ µs HAT2164H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area ID (A) 500 30 Drain Current Channel Dissipation Pch (W) 40 20 10 1m PW s DC = 1 Op 0 m era s tio n 10 1 Operation in this area is limited by RDS(on) 0.1 Tc = 25°C 1 shot Pulse 0 50 100 150 Case Temperature 0.01 0.1 200 10 V 4V 80 3 10 30 100 VDS (V) 100 3.2 V Pulse Test 1 Typical Transfer Characteristics 3.0 V VDS = 10 V Pulse Test ID (A) ID (A) 100 0.3 Drain to Source Voltage Tc (°C) Typical Output Characteristics 60 80 60 2.8 V 40 2.6 V 20 Drain Current Drain Current 10 µ 0µ s s 10 100 25°C 40 Tc = 75°C -25°C 20 VGS = 2.4 V 0 2 4 6 8 Drain to Source Voltage 0 10 200 150 ID = 50 A 100 20 A 50 10 A 0 4 8 12 Gate to Source Voltage Rev.5.00 Sep 26, 2005 page 3 of 7 16 20 VGS (V) 3 5 4 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 250 1 10 Pulse Test 5 VGS = 4.5 V 10 V 2 1 1 3 10 30 Drain Current 100 300 ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2164H 8 Pulse Test 6 ID = 10 A, 20 A 50 A 4 VGS = 4.5 V 10 A, 20 A, 50 A 2 10 V 0 -25 0 25 50 75 100 125 150 Case Temperature Tc 1000 300 100 Tc = -25°C 30 75°C 10 25°C 3 1 VDS = 10 V Pulse Test 0.3 0.1 0.1 0.3 (°C) 30 100 10000 Ciss Capacitance C (pF) Reverse Recovery Time trr (ns) 10 Typical Capacitance vs. Drain to Source Voltage 100 50 20 10 0.1 0.3 1 3 10 30 3000 1000 Coss 300 Crss 100 30 di / dt = 100 A / µs VGS = 0, Ta = 25°C Reverse Drain Current VGS = 0 f = 1 MHz 10 100 0 IDR (A) 5 12 VDD = 25 V 20 8 VDS 10 V 4 5V 0 40 80 Gate Charge Rev.5.00 Sep 26, 2005 page 4 of 7 120 160 Qg (nc) 20 25 30 0 200 1000 Switching Time t (ns) 30 16 VGS (V) VGS VDD = 5 V 10 V 25 V 40 10 20 ID = 60 A 15 Switching Characteristics Gate to Source Voltage 50 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) 3 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 1 300 td(off) 100 tf 30 t d(on) 10 tr 3 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.1 0.2 0.5 1 2 Drain Current 5 10 20 ID (A) 50 100 HAT2164H (mJ) Reverse Drain Current vs. Source to Drain Voltage 80 Repetitive Avalanche Energy EAR Reverse Drain Current IDR (A) 100 10 V VGS = 0 5V 60 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating 100 IAP = 30 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 80 60 40 20 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - c(t) = γs (t) • θch - c θch - c = 4.17°C/ W, Tc = 25°C 0.1 0.05 PDM 0.02 1 0.0 0.03 0.01 10 µ D= lse t ho PW T PW T pu 1s 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit VDS Monitor Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.5.00 Sep 26, 2005 page 5 of 7 VDD HAT2164H Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) Rev.5.00 Sep 26, 2005 page 6 of 7 10% tr 90% td(off) tf HAT2164H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A Package Name MASS[Typ.] LFPAK Unit: mm 0.080g 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 0° – 8° +0.25 +0.05 0.20 –0.03 0.6 –0.20 1.3 Max 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2164H-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 26, 2005 page 7 of 7 Sales Strategic Planning Div. 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