Renesas HAT2221C-EL-E Silicon n channel mos fet power switching Datasheet

HAT2221C
Silicon N Channel MOS FET
Power Switching
REJ03G1240-0400
Rev.4.00
Feb 28, 2006
Features
• Low on-resistance
RDS(on) = 120 mΩ typ. (at VGS = 10 V)
• Low drive current.
• High density mounting
• 4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
2 3 4 5
DD D D
4
1
2
3
6
G
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
ID (pulse)Note1
Body - Drain diode reverse drain current
IDR
Channel dissipation
PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Rev.4.00 Feb 28, 2006 page 1 of 6
Ratings
30
+20 / –10
1.5
6
1.5
790
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
HAT2221C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Symbol
V(BR)DSS
V(BR)GSS
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
IGSS
IDSS
VGS(off)
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Notes: 3. Pulse test
Rev.4.00 Feb 28, 2006 page 2 of 6
Min.
30
Typ.
—
Max.
—
Unit
V
—
—
V
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
+20
–10
—
—
0.4
—
—
1.3
—
—
—
—
—
—
—
—
—
—
—
120
160
2
110
27
13
2.8
0.6
0.5
8
6
±10
1
1.4
150
235
—
—
—
—
—
—
—
—
—
µA
µA
V
mΩ
mΩ
S
pF
pF
PF
nC
nC
nC
ns
ns
td(off)
tf
VDF
—
—
—
40
3
0.8
—
—
1.1
ns
ns
V
Test Conditions
ID = 10 mA, VGS = 0
IG = ±10 µA, VDS = 0
VGS = +16 / –8 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 0.8 A, VGS = 10 V Note3
ID = 0.8 A, VGS = 4.5 V Note3
ID = 0.8 A, VDS = 10 V Note3
VDS = 10 V, VGS = 0,
f = 1MHz
VDD = 10 V, VGS = 10 V,
ID = 1.5 A
ID = 0.8 A, VGS = 10 V,
VDD = 10 V, RL = 12.5 Ω,
Rg = 4.7 Ω
IF = 1.5 A, VGS = 0 Note3
HAT2221C
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
Ta = 25°C, 1shot pulse
30 When using the FR4 board.
100
150
Ambient Temperature
0.01
200
0.03 0.1 0.3
1
io
n
3
10 30 100
Typical Transfer Characteristics
10
10
VDS = 10 V
Pulse Test
10 V
5V
4.5 V
6
4V
3.5 V
4
3V
2
Drain Current ID (A)
Pulse Test
Drain Current ID (A)
at
Drain to Source Voltage VDS (V)
Ta (°C)
Typical Output Characteristics
8
er
s
m
50
op
10
0
C
Operation in this area
is limited by RDS(on)
0.03
µs
0.1
=
D
0.3
s
0.2
1
PW
0.4
3
0
10
0.6
10 µs
10
m
Drain Current ID (A)
0.8
100
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
1
Channel Dissipation
Pch (W)
1.0
2.5 V
8
25°C
6
Tc = 75°C
–25°C
4
2
VGS = 2 V
2
4
6
8
0
10
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
400
Pulse Test
300
1.5 A
200
0.8 A
100
ID = 0.5 A
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Rev.4.00 Feb 28, 2006 page 3 of 6
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
1000
Pulse Test
VGS = 4.5 V
100
10
0.01
10 V
0.1
1
Drain Current ID (A)
10
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2221C
400
Pulse Test
ID = 0.5, 0.8 A
300
1.5 A
200
4.5 V
0.5, 0.8, 1.5 A
100
VGS = 10 V
0
–25
0
25
50
75
Case Temperature
100 125 150
Tc
10
Tc = –25°C
1
25°C
75°C
0.1
VDS = 10 V
Pulse Test
0.01
12
20
8
10
4
VDD = 30 V
20 V
10 V
0
0.8
1.6
2.4
3.2
10
0
Ciss
100
30
Coss
Crss
10
VGS = 0
f = 1 MHz
1
4
0
5
10
20
15
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
100
8
Switching Time t (ns)
Reverse Drain Current IDR (A)
3
300
3
10
10 V
6
VGS = 0
4
2
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Rev.4.00 Feb 28, 2006 page 4 of 6
td(off)
td(on)
10
tr
tf
VGS = 4.5 V, VDS = 10 V
Rg = 4.7 Ω
Pulse Test
0
1
1000
Capacitance C (pF)
16
VGS
VDD = 10 V
20 V
30 V
VDD
30
0.3
Typical Capacitance vs.
Drain to Source Voltage
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
ID = 1.5 A
0.1
Drain Current ID (A)
(°C)
Dynamic Input Characteristics
40
0.03
1
0.1
1
Drain Current ID (A)
10
HAT2221C
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
RL
4.7 Ω
Vin
10 V
Vin
Vout
VDD
= 10 V
10%
10%
90%
td(on)
Rev.4.00 Feb 28, 2006 page 5 of 6
10%
tr
90%
td(off)
tf
HAT2221C
Package Dimensions
JEITA Package Code

Package Name
CMFPAK-6
RENESAS Code
PWSF0006JA-A
Previous Code
CMFPAK-6 / CMFPAK-6V
MASS[Typ.]
0.0065g
D
A
e
c
E
A
HE
A
x M
LP
L
b
S A
Reference
Symbol
e
A2
A
A1
y S
S
e1
b
b1
l1
c1
b2
c
Pattern of terminal position areas
A-A Section
A
A1
A2
b
b1
c
c1
D
E
e
HE
L
LP
x
y
b2
e1
l1
Dimension in Millimeters
Min
0.6
0
0.7
0.15
0.1
1.9
1.6
2.05
0.1
0.15
Nom
0.22
0.2
0.13
0.11
2.0
1.7
0.65
2.1
0.2
Max
0.8
0.01
0.79
0.3
0.15
2.1
1.8
2.15
0.3
0.45
0.05
0.05
0.35
1.65
0.5
Ordering Information
Part Name
HAT2221C-EL-E
Quantity
3000 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Feb 28, 2006 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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