HAT2266H Silicon N Channel Power MOS FET Power Switching REJ03G1370-0500 Rev.5.00 Apr 05, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.2 mΩ typ. (at VGS = 10 V) • Lead Free Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 3 12 4 G 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.5.00 Apr 05, 2006 page 1 of 7 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Ratings 60 ±20 30 120 30 20 34 Unit V V A A A A mJ Pch Note3 θch-C Tch Tstg 23 5.44 150 –55 to +150 °C/W °C °C W HAT2266H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.5.00 Apr 05, 2006 page 2 of 7 Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 — — 1.0 — — 35 — — — — — — — — — — Typ — — — — 9.5 11 70 3600 400 145 0.5 25 8.2 9 10 15 50 Max — ±0.1 1 2.5 12 16 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns — — — 5.5 0.84 40 — 1.10 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 30 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 4.5 V, ID = 30 A VGS = 10 V, ID = 15 A, VDD ≅ 30 V, RL = 2 Ω, Rg = 4.7 Ω IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0, diF/ dt = 100 A/ µs HAT2266H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 30 20 10 10 tio 1 n Tc Operation in this area is limited by RDS(on) = 25 ° C 0.1 Ta = 25°C 1 shot Pulse 0 50 100 150 0.01 0.01 0.03 0.1 0.3 200 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 3.0 V Pulse Test 5V 10 V 40 VDS = 10 V Pulse Test Drain Current ID (A) Drain Current ID (A) 10 µs 10 PW 1 m 0 µs s DC = 10 O pe m s ra 100 Drain Current ID (A) Channel Dissipation Pch (W) 40 2.8 V 30 2.6 V 20 10 VGS = 2.4 V 40 30 20 Tc = –75°C 10 25°C −25°C 2 4 6 8 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Saturation Voltage vs. Gate to Source Voltage Static Drain to Source State Resistance vs. Drain Current 500 Pulse Test 400 300 200 ID = 10 A 100 5A 2A 0 0 10 Drain Source On Sate Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.5.00 Apr 05, 2006 page 3 of 7 100 30 VGS = 4.5 V 10 10 V 3 Pulse Test 1 1 3 10 30 100 300 1000 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 40 Pulse Test 32 24 ID = 2,5,10 A 16 VGS = 4.5 V 2, 5, 10 A 8 10 V 0 −25 0 25 50 75 100 125 150 100 Tc = −25°C 30 75°C 25°C 10 3 1 0.3 0.1 0.1 VDS = 10 V Pulse Test 0.3 3 1 10 30 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 100 10000 Capacitance C (pF) Ciss 50 20 100 1 3 10 30 Coss 300 100 Crss VGS = 0 f = 1 MHz 100 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 30 A VGS 16 VDD = 50 V 25 V 10 V 12 VDS 40 8 20 4 VDD = 50 V 25 V 10 V 0 0 1000 10 0.3 80 60 3000 30 20 40 60 80 Gate Charge Qg (nC) Rev.5.00 Apr 05, 2006 page 4 of 7 0 100 1000 Switching Time t (ns) 10 0.1 di / dt = 100 A / µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2266H 300 100 td(off) 30 10 tr td(on) tf VGS = 10 V, VDD = 30 V RG = 10 Ω, duty ≤ 1 % 3 1 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 HAT2266H Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 40 10 V 30 VGS = 0, –5 V 5V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 50 IAP = 20 V VDD = 20 V duty < 1 % Rg = 50 Ω 40 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - c(t) = γs (t) • θch - c θch - c = 5.44°C/ W, Tc = 25°C 0.1 0.05 0.02 1 0.0 0.03 0.01 10 1s PDM t ho pu D= lse PW T PW T 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit VDS Monitor Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 0 Rev.5.00 Apr 05, 2006 page 5 of 7 VDD HAT2266H Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 25 V 90% td(on) Rev.5.00 Apr 05, 2006 page 6 of 7 10% tr 90% td(off) tf HAT2266H Package Dimensions JEITA Package Code SC-100 Previous Code LFPAKV RENESAS Code PTZZ0005DA-A 4.9 5.3 Max 4.0 ± 0.2 MASS[Typ.] 0.080g +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 +0.05 0.20 –0.03 0° – 8° +0.25 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 Unit: mm 0.6 –0.20 1.3 Max Package Name LFPAK 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2266H-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Apr 05, 2006 page 7 of 7 Sales Strategic Planning Div. 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