Elpida HB52RD328GB-B 256mb unbuffered sdram micro dimm Datasheet

PRELIMINARY DATA SHEET
256MB Unbuffered SDRAM Micro DIMM
HB52RF328GB-B (32M words × 64 bits, 1 bank)
HB52RD328GB-B (32M words × 64 bits, 1 bank)
Description
Features
EO
L
The HB52RF328GB and HB52RD328GB are a 32M ×
64 × 1 banks Synchronous Dynamic RAM Micro Dual
In-line Memory Module (Micro DIMM), mounted 8
pieces of 256M bits SDRAM (HM522805BTB/BLTB)
sealed in TCP package and 1 piece of serial EEPROM
(2k bits EEPROM) for Presence Detect (PD). An
outline of the products is 144-pin Zig Zag Dual tabs
socket type compact and thin package. Therefore,
they make high density mounting possible without
surface mount technology. They provide common data
inputs and outputs.
Decoupling capacitors are
mounted beside TCP on the module board.
Note: Do not push the cover or drop the modules in
order to protect from mechanical defects, which
would be electrical defects.
Document No. E0202H10 (Ver. 1.0)
Date Published August 2001 (K)
Printed in Japan
URL: http://www.elpida.com
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• 144-pin Zig Zag Dual tabs socket type (dual lead out)
 Outline: 38.00mm (Length) × 30.00mm (Height) ×
3.80mm (Thickness)
 Lead pitch: 0.50mm
• 3.3V power supply
• Clock frequency: 133MHz/100MHz (max.)
• LVTTL interface
• Data bus width: × 64 Non parity
• Single pulsed /RAS
• 4 Banks can operates simultaneously and
independently
• Burst read/write operation and burst read/single write
operation capability
• Programmable burst length (BL): 1, 2, 4, 8
• 2 variations of burst sequence
 Sequential
 Interleave
• Programmable /CE latency (CL): 2, 3
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64ms
• 2 variations of refresh
 Auto refresh
 Self refresh
• Low self refresh current : HB52RF328GB-xxBL
: HB52RD328GB-xxBL
This product became EOL in September, 2002.
C
Elpida Memory, Inc. 2001
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
HB52RF328GB-B, HB52RD328GB-B
Ordering Information
Part number
Clock frequency
MHz (max.)
/CE latency
HB52RF328GB-75B*1
HB52RF328GB-75BL*1
HB52RD328GB-A6B
HB52RD328GB-A6BL
HB52RD328GB-B6B*2
HB52RD328GB-B6BL*2
133
133
100
100
100
100
3
3
2, 3
2, 3
3
3
Package
Contact pad
Micro DIMM (144-pin)
Gold
EO
Notes: 1. 100MHz operation at /CE latency = 2.
2. 66MHz operation at /CE latency = 2.
Pin Configurations
Front Side
L
1pin
143pin
2pin
144pin
Back Side
25
DQMB1
DQ22
26
DQMB5
98
DQ54
27
VCC
99
DQ23
28
VCC
100
DQ55
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29
A0
101
VCC
30
A3
102
VCC
31
A1
103
A6
32
A4
104
A7
33
A2
105
A8
34
A5
106
BA0
35
VSS
107
VSS
36
VSS
108
VSS
Front side
Back side
Pin No.
Pin name
1
VSS
3
DQ0
5
DQ1
7
DQ2
9
DQ3
11
VCC
13
DQ4
15
DQ5
17
DQ6
19
DQ7
21
VSS
23
DQMB0
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
73
NC
2
VSS
74
CK1
75
VSS
4
DQ32
76
VSS
77
NC
6
DQ33
78
NC
79
NC
8
DQ34
80
NC
81
VCC
10
DQ35
82
VCC
83
DQ16
12
VCC
84
DQ48
85
DQ17
14
DQ36
86
DQ49
87
DQ18
16
DQ37
88
DQ50
89
DQ19
18
DQ38
90
DQ51
91
VSS
20
DQ39
92
VSS
93
DQ20
22
VSS
94
DQ52
95
DQ21
24
DQMB4
96
DQ53
97
2
ct
Preliminary Data Sheet E0202H10 (Ver. 1.0)
HB52RF328GB-B, HB52RD328GB-B
Front side
Back side
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
37
DQ8
109
A9
38
DQ40
110
BA1
39
DQ9
111
A10 (AP)
40
DQ41
112
A11
41
DQ10
113
VCC
42
DQ42
114
VCC
43
DQ11
115
DQMB2
44
DQ43
116
DQMB6
45
VCC
117
DQMB3
46
VCC
118
DQMB7
47
DQ12
119
VSS
48
DQ44
120
VSS
EO
DQ13
121
DQ24
50
DQ45
122
DQ56
51
DQ14
123
DQ25
52
DQ46
124
DQ57
53
DQ15
125
DQ26
54
DQ47
126
DQ58
55
VSS
127
DQ27
56
VSS
128
DQ59
57
NC
129
VCC
58
NC
130
VCC
59
NC
131
DQ28
60
NC
132
DQ60
61
CK0
133
DQ29
62
CKE0
134
DQ61
63
VCC
135
DQ30
64
VCC
136
DQ62
65
/RE
137
DQ31
66
/CE
138
DQ63
67
69
71
L
49
/W
139
VSS
68
NC
140
VSS
/S0
141
SDA
70
A12
142
SCL
NC
143
VCC
72
NC
144
VCC
Pin name
A0 to A12
BA0, BA1
DQ0 to DQ63
/S0
/RE
/CE
/W
DQMB0 to DQMB7
CK0, CK1
CKE0
SDA
SCL
VCC
NC
Function
Address input
— Row address
A0 to A12
— Column address A0 to A9
Bank select address
Data-input/output
Chip select
Row address asserted bank enable
Column address asserted
Write enable
Byte input/output mask
Clock input
Clock enable
Data-input/output for serial PD
Clock input for serial PD
Power supply
Ground
No connection
Preliminary Data Sheet E0202H10 (Ver. 1.0)
3
ct
VSS
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Pin Description
HB52RF328GB-B, HB52RD328GB-B
1
Serial PD Matrix*
Byte No.
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Comments
0
Number of bytes used by module
manufacturer
1
0
0
0
0
0
0
0
80
128
1
Total SPD memory size
0
0
0
0
1
0
0
0
08
256byte
2
Memory type
0
0
0
0
0
1
0
0
04
SDRAM
3
Number of row addresses bits
0
0
0
0
1
1
0
1
0D
13
4
Number of column addresses bits
0
0
0
0
1
0
1
0
0A
10
0
0
0
0
0
0
1
01
1
Module data width
Number of banks
0
1
0
0
0
0
0
0
40
64
7
Module data width (continued)
0
0
0
0
0
0
0
0
00
0 (+)
8
Module interface signal levels
0
0
0
0
0
0
0
1
01
LVTTL
9
SDRAM cycle time
(highest /CE latency)
(-75) 7.5ns
0
1
1
1
0
1
0
1
75
CL = 3
1
0
1
0
0
0
0
0
A0
10
SDRAM access from Clock (highest
/CE latency)
0
(-75) 5.4ns
1
0
1
0
1
0
0
54
0
1
1
0
0
0
0
0
60
11
Module configuration type
0
0
0
0
0
0
0
0
00
Non parity
12
Refresh rate/type
1
0
0
0
0
0
1
0
82
Normal
(7.8125µs)
Self refresh
13
SDRAM width
0
0
0
0
1
0
0
0
08
×8
14
Error checking SDRAM width
EO
0
6
L
5
(-A6, -B6) 10ns
(-A6, -B6) 6ns
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0
0
0
0
0
0
0
00
—
0
0
0
0
0
0
0
1
01
1 CLK
0
0
0
0
1
1
1
1
0F
1, 2, 4, 8
0
0
0
0
0
1
0
0
04
4
0
0
0
0
0
1
1
0
06
2, 3
0
0
0
0
0
0
0
1
01
0
0
0
0
0
0
0
0
1
01
0
SDRAM module attributes
0
0
0
0
0
0
0
0
00
Unbuffer
22
SDRAM device attributes: General
0
0
0
0
1
1
1
0
0E
VCC ± 10%
23
SDRAM cycle time
(2nd highest /CE latency)
(-75/A6) 10ns
1
0
1
0
0
0
0
0
A0
CL = 2
1
1
1
1
0
0
0
0
F0
0
1
1
0
0
0
0
0
60
1
0
0
0
0
0
0
0
80
0
0
0
0
0
0
0
0
00
15
16
17
18
19
20
21
(-B6) 15ns
24
SDRAM access from Clock (2nd
highest /CE latency)
(-75/A6) 6ns
25
SDRAM cycle time
(3rd highest /CE latency)
Undefined
(-B6) 8ns
Preliminary Data Sheet E0202H10 (Ver. 1.0)
4
ct
0
SDRAM device attributes:
minimum clock delay for back-toback random column addresses
SDRAM device attributes:
Burst lengths supported
SDRAM device attributes: number of
banks on SDRAM device
SDRAM device attributes:
/CE latency
SDRAM device attributes:
/S latency
SDRAM device attributes:
/W latency
HB52RF328GB-B, HB52RD328GB-B
Byte No.
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
26
SDRAM access from Clock (3rd
highest /CE latency)
Undefined
0
0
0
0
0
0
0
0
00
27
Minimum row precharge time
0
0
0
1
0
1
0
0
14
20ns
28
Row active to row active min
(-75)
0
0
0
0
1
1
1
1
0F
15ns
0
0
0
1
0
1
0
0
14
20ns
(-A6, -B6)
Comments
29
/RE to /CE delay min
0
0
0
1
0
1
0
0
14
20ns
30
Minimum /RE pulse width
(-75)
0
0
1
0
1
1
0
1
2D
45ns
EO
0
0
1
1
0
0
1
0
32
50ns
31
Density of each bank on module
(-A6, -B6)
0
1
0
0
0
0
0
0
40
256M byte
32
Address and command signal input
setup time
(-75)
0
0
0
1
0
1
0
1
15
1.5ns
0
0
1
0
0
0
0
0
20
2.0ns
33
Address and command signal input
hold time
(-75)
0
0
0
0
1
0
0
0
08
0.8ns
0
0
0
1
0
0
0
0
10
1.0ns
0
0
0
1
0
1
0
1
15
1.5ns
0
0
1
0
0
0
0
0
20
2.0ns
0
0
0
0
1
0
0
0
08
0.8ns
(-A6, -B6)
(-A6, -B6)
L
34
Data signal input setup time
(-75)
(-A6, -B6)
35
Data signal input hold time
(-75)
36 to 61
Superset information
62
63
(-A6, -B6)
0
0
0
1
0
0
0
0
10
1.0ns
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0
0
0
0
0
0
0
0
00
Future use
SPD data revision code
0
0
0
1
0
0
1
0
12
Rev. 1.2B
Checksum for bytes 0 to 62
(-75B/BL)
0
1
0
1
0
0
1
0
52
82
1
0
1
1
1
0
0
1
B9
185
(-A6B/BL)
0
0
1
0
1
0
0
1
29
41
64
Manufacturer’s JEDEC ID code
(-B6B/BL)
0
0
0
0
0
1
1
1
07
HITACHI
65 to 71
Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00
72
Manufacturing location
×
×
×
×
×
×
×
×
××
*2 (ASCII-8bit code)
73
Manufacturer’s part number
0
1
0
0
1
0
0
0
48
H
74
Manufacturer’s part number
0
1
0
0
0
0
1
0
42
B
75
Manufacturer’s part number
0
0
1
1
0
1
0
1
35
5
76
Manufacturer’s part number
0
0
1
1
0
0
1
0
32
2
77
Manufacturer’s part number
0
1
0
1
0
0
1
0
52
R
78
Manufacturer’s part number
(-75)
0
1
0
0
0
1
1
0
46
F
0
1
0
0
0
1
0
0
44
D
3
(-A6, -B6)
Manufacturer’s part number
0
0
1
1
0
0
1
1
33
80
Manufacturer’s part number
0
0
1
1
0
0
1
0
32
81
Manufacturer’s part number
0
0
1
1
1
0
0
0
38
82
Manufacturer’s part number
0
1
0
0
0
1
1
1
47
83
Manufacturer’s part number
0
1
0
0
0
0
1
0
42
84
Manufacturer’s part number
0
0
1
0
1
1
0
1
2D
Preliminary Data Sheet E0202H10 (Ver. 1.0)
5
ct
79
2
8
G
B

HB52RF328GB-B, HB52RD328GB-B
Byte No.
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Comments
85
Manufacturer’s part number
(-75)
0
0
1
1
0
1
1
1
37
7
(-A6)
0
1
0
0
0
0
0
1
41
A
(-B6)
0
1
0
0
0
0
1
0
42
B
0
0
1
1
0
1
0
1
35
5
0
0
1
1
0
1
1
0
36
6
86
Manufacturer’s part number
(-75)
(-A6, -B6)
Manufacturer’s part number
0
1
0
0
0
0
1
0
42
B
88
Manufacturer’s part number
(-xxB)
0
0
1
0
0
0
0
0
20
(Space)
EO
87
1
0
0
1
1
0
0
4C
L
Manufacturer’s part number
(-xxBL)
0
0
1
0
0
0
0
0
20
(Space)
90
Manufacturer’s part number
0
0
1
0
0
0
0
0
20
(Space)
91
Revision code
0
0
1
1
0
0
0
0
30
Initial
92
Revision code
0
0
1
0
0
0
0
0
20
(Space)
93
Manufacturing date
×
×
×
×
×
×
×
×
××
Year code (BCD)
94
Manufacturing date
×
×
×
×
×
×
×
×
××
Week code (BCD)
95 to 98
Assembly serial number
*3
99 to 125
Manufacturer specific data
—
—
—
—
—
—
—
—
—
*4
126
Intel specification frequency
0
1
1
0
0
1
0
0
64
100MHz
127
Intel specification /CE# latency
support
(-75/A6)
1
0
0
0
0
1
1
1
87
CL = 2, 3
1
0
0
0
0
1
0
1
85
CL = 3
L
0
89
(-B6)
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Notes: 1. All serial PD data are not protected. 0: Serial data, “driven Low”, 1: Serial data, “driven High”. These
SPD are based on Rev.1.2B specification.
2. Byte72 is manufacturing location code. (ex: In case of Japan, byte72 is 4AH. 4AH shows “J” on ASCII
code.)
3. Bytes 95 through 98 are assembly serial number.
4. All bits of 99 through 125 are not defined (“1” or “0”).
ct
Preliminary Data Sheet E0202H10 (Ver. 1.0)
6
HB52RF328GB-B, HB52RD328GB-B
Block Diagram
/S0
/W
/CS
DQMB0
/CS
DQMB1
D0
D1
8 N0, N1
8 N8, N9
DQ0 to DQ7
DQ8 to DQ15
EO
/CS
DQMB2
/CS
DQMB3
D2
D3
8 N2, N3
8 N10, N11
DQ16 to DQ23
DQ24 to DQ31
/CS
L
DQMB4
/CS
DQMB5
D4
D5
8 N4, N5
8 N12, N13
DQ32 to DQ39
DQ40 to DQ47
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Pr
/CS
DQMB6
/CS
DQMB7
D6
D7
8 N6, N7
8 N14, N15
DQ48 to DQ55
DQ55 to DQ64
Serial PD
/RAS (D0 to D7)
/RE
/CE
/CAS (D0 to D7)
SCL
A0 to A12 (D0 to D7)
A0 to A12
BA0
BA0 (D0 to D7)
BA1
SDA
SCL
A0
A1
A2
SDA
U0
BA1 (D0 to D7)
CKE0
VSS
Notes :
1. The SDA pull-up resistor is required due to
the open-drain/open-collector output.
2. The SCL pull-up resistor is recommended
because of the normal SCL line inacitve
"high" state.
CKE (D0 to D7)
CK0
CLK (D0 to D7)
VCC
VCC (D0 to D7)
ct
C100 to C118
VSS (D0 to D7)
VSS
* D0 to D7: HM5225805
U0: 2k bits EEPROM
C100 to C118: 0.1µF
N0 to N15: Network resistors (10Ω)
10Ω
CK1
10pF
Preliminary Data Sheet E0202H10 (Ver. 1.0)
7
HB52RF328GB-B, HB52RD328GB-B
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to VCC + 0.5
(≤ 4.6 (max.))
V
1
Supply voltage relative to VSS
VCC
–0.5 to +4.6
V
1
IOUT
50
mA
Power dissipation
PT
8.0
W
Operating temperature
Topr
0 to +65
°C
Storage temperature
Tstg
–55 to +125
°C
EO
Short circuit output current
Note: 1. Respect to VSS.
DC Operating Conditions (TA = 0 to +65°C)
Parameter
Symbol
min.
max.
Unit
Note
Supply voltage
VCC
3.0
3.6
V
1, 2
VSS
0
0
V
3
L
Input high voltage
VIH
2.0
VCC + 0.3
V
1, 4
Input low voltage
VIL
–0.3
0.8
V
1, 5
Ambient illuminance
—
—
100
lx
All voltage referred to VSS.
The supply voltage with all VCC pins must be on the same level.
The supply voltage with all VSS pins must be on the same level.
VIH (max.) = VCC + 2.0V for pulse width ≤ 3ns at VCC.
VIL (min.) = VSS – 2.0V for pulse width ≤ 3ns at VSS.
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Notes: 1.
2.
3.
4.
5.
Preliminary Data Sheet E0202H10 (Ver. 1.0)
8
HB52RF328GB-B, HB52RD328GB-B
DC Characteristics 1 (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
Parameter
Symbol
Grade
Max.
-75
-A6
-B6
-75
-A6
-B6
880
760
600
880
760
760
Unit
Test conditions
Notes
mA
Burst length = 1
tRC = min.
1, 2, 3
ICC1
(CL = 3)
ICC1
Standby current in power down
ICC2P
24
mA
CKE0 = VIL,
tCK = 12ns
6
Standby current in power down
(input signal stable)
ICC2PS
16
mA
CKE0 = VIL, tCK = ∞
7
Standby current in non power down
ICC2N
160
mA
Active standby current in power down
ICC3P
32
mA
Active standby current in non power
down
ICC3N
240
mA
Burst operating current
(CL = 2)
ICC4
(CL = 3)
ICC4
L
EO
Operating current
(CL = 2)
Refresh current
-75
-A6
-B6
-75
-A6
-B6
mA
800
800
600
1080
800
800
ICC5
mA
CKE0, /S = VIH,
tCK = 12ns
CKE0, /S = VIH,
tCK = 12ns
CKE0, /S = VIH,
tCK = 12ns
4
1, 2, 6
1, 2, 4
tCK = min., BL = 4
1, 2, 5
mA
tRC = min.
3
VIH ≥ VCC – 0.2V
VIL ≤ 0.2V
8
mA
1760
Self refresh current
ICC6
24
mA
Self refresh current
(L-version)
ICC6
16
mA
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Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK0/CK1 operating current.
7. After power down mode, no CK0/CK1 operating current.
8. After self refresh mode set, self refresh current.
DC Characteristics 2 (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
Grade
min.
Max.
Unit
Test conditions
ILI
–10
10
µA
0 ≤ Vin ≤ VCC
ILO
–10
10
µA
0 ≤ Vout ≤ VCC
DQ = disable
VOH
2.4
—
V
IOH = –4 mA
VOL
—
0.4
V
IOL = 4 mA
Notes
ct
Preliminary Data Sheet E0202H10 (Ver. 1.0)
9
HB52RF328GB-B, HB52RD328GB-B
Pin Capacitance (TA = 25°C, VCC = 3.3V ± 0.3V)
Parameter
Symbol
Pins
max.
Unit
Notes
Input capacitance
CIN
Address
80
pF
1, 2, 4
Input capacitance
CIN
/RE, /CE, /W,
CK0/CK1, CKE0
80
pF
1, 2, 4
Input capacitance
CIN
/S0
80
pF
1, 2, 4
Input capacitance
CIN
DQMB
20
pF
1, 2, 4
Input/Output capacitance
CI/O
DQ
20
pF
1, 2, 3, 4
Capacitance measured with Boonton Meter or effective capacitance measuring method.
Measurement condition: f = 1MHz, 1.4V bias, 200mV swing.
DQMB = VIH to disable Data-out.
This parameter is sampled and not 100% tested.
EO
Notes: 1.
2.
3.
4.
AC Characteristics (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
-75
Parameter
Symbol
PC100
Symbol
System clock cycle time
(CL = 2)
tCK
Tclk
L
(CL = 3)
-A6
-B6
min.
max.
min.
max.
min.
max.
Unit
Notes
10
—
10
—
15
—
ns
1
Tclk
7.5
—
10
—
10
—
ns
tCKH
Tch
2.5
—
3
—
3
—
ns
1
CK low pulse width
tCKL
Tcl
2.5
—
3
—
3
—
ns
1
Access time from CK
(CL = 2)
tAC
Tac
—
6
—
6
—
8
ns
1, 2
(CL = 3)
tAC
Tac
—
5.4
—
6
—
6
ns
tOH
Toh
Data-out hold time
CK to Data-out low impedance
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tCK
CK high pulse width
2.7
—
3
—
3
—
ns
1, 2
2
—
2
—
2
—
ns
1, 2, 3
—
5.4
—
6
—
6
ns
1, 4
1.5
—
2
—
2
—
ns
1, 5
Tpde
1.5
—
2
—
2
—
ns
1
Thi
0.8
—
1
—
1
—
ns
1
Trc
67.5
—
70
—
70
—
ns
1
Tras
45
120000
50
120000 50
120000 ns
1
Trcd
20
—
20
—
20
—
ns
1
Trp
20
—
20
—
20
—
ns
1
Tdpl
15
—
20
—
20
—
ns
1
Trrd
15
—
20
—
20
—
ns
1
tLZ
CK to Data-out high impedance tHZ
Input setup time
tAS, tCS,
Tsi
tDS, tCES
ct
CKE setup time for power down
tCESP
exit
tAH, tCH,
Input hold time
tDH,
tCEH
Ref/Active to Ref/Active
tRC
command period
Active to Precharge command
tRAS
period
Active command to column
tRCD
command (same bank)
Precharge to active command
tRP
period
Write recovery or data-in to
tDPL
precharge lead time
Active (a) to Active (b)
tRRD
command period
Transition time (rise and fall)
tT
1
5
1
5
1
5
Refresh period
tREF
—
64
—
64
—
64
Preliminary Data Sheet E0202H10 (Ver. 1.0)
10
ns
ms
HB52RF328GB-B, HB52RD328GB-B
Notes: 1.
2.
3.
4.
5.
AC measurement assumes tT = 1ns. Reference level for timing of input signals is 1.5V.
Access time is measured at 1.5V. Load condition is CL = 50pF.
tLZ (min.) defines the time at which the outputs achieves the low impedance state.
tHZ (max.) defines the time at which the outputs achieves the high impedance state.
tCES defines CKE setup time to CK rising edge except power down exit command.
Test Conditions
• Input and output timing reference levels: 1.5V
• Input waveform and output load: See following figures
EO
2.4V
input
0.4V
I/O
2.0V
0.8V
CL
tT
tT
Input waveform and output load
L
ct
u
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Preliminary Data Sheet E0202H10 (Ver. 1.0)
11
HB52RF328GB-B, HB52RD328GB-B
Relationship Between Frequency and Minimum Latency
Parameter
-75
-A6, -B6
Frequency (MHz)
133
100
7.5
10
Notes
lRCD
3
2
1
lRC
9
7
= [lRAS+ lRP]
1
lRAS
6
5
1
lRP
3
2
1
2
2
1
2
2
1
tCK (ns)
Symbol
EO
Active command to column command
(same bank)
Active command to active command
(same bank)
Active command to precharge command (same
bank)
Precharge command to active command (same
bank)
Write recovery or data-in to precharge command
(same bank)
Active command to active command
(different bank)
lDPL
PC100
Symbol
Tdpl
lRRD
lSREX
Tsrx
1
1
2
Last data in to active command
(Auto precharge, same bank)
lAPW
Tdal
5
4
= [lDPL + lRP]
Self refresh exit to command input
lSEC
9
7
= [lRC]
3
L
Self refresh exit time
Precharge command to high impedance
(CL = 2)
lHZP
Troh
2
2
(CL = 3)
lHZP
Troh
3
3
lAPR
1
1
lEP
–1
–1
lEP
–2
–2
(CL = 3)
u
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Last data out to active command
(Auto precharge, same bank)
Last data out to precharge (early precharge)
(CL = 2)
Column command to column command
lCCD
Tccd
1
1
Write command to data in latency
lWCD
Tdwd
0
0
DQMB to data in
lDID
Tdqm
0
0
lDOD
Tdqz
2
2
lCLE
Tcke
1
1
lRSA
Tmrd
1
1
lCDD
0
0
lPEC
1
1
DQMB to data out
CKE to CK disable
Register set to active command
/S to command disable
Power down exit to command input
Notes: 1. lRCD to lRRD are recommended value.
2. Be valid [DESL] or [NOP] at next command of self refresh exit.
3. Except [DESL] and [NOP]
ct
Preliminary Data Sheet E0202H10 (Ver. 1.0)
12
HB52RF328GB-B, HB52RD328GB-B
Pin Functions
CK0/CK1 (input pin): CK is the master clock input to this pin. The other input signals are referred at CK rising
edge.
/S0 (input pin): When /S is Low, the command input cycle becomes valid. When /S is High, all inputs are ignored.
However, internal operations (bank active, burst operations, etc.) are held.
/RE, /CE and /W (input pins): Although these pin names are the same as those of conventional DRAM modules,
they function in a different way. These pins define operation commands (read, write, etc.) depending on the
combination of their voltage levels. For details, refer to the command operation section.
EO
A0 to A12 (input pins): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active command
cycle CK rising edge. Column address (AY0 to AY9) is determined by A0 to A9 level at the read or write command
cycle CK rising edge. And this column address becomes burst access start address. A10 defines the precharge
mode. When A10 = High at the precharge command cycle, both banks are precharged. But when A10 = Low at the
precharge command cycle, only the bank that is selected by BA0, BA1(BA) is precharged.
BA0, BA1 (input pin): BA0, BA1 is a bank select signal (BA). The memory array is divided into bank0, bank1,
bank2 and bank3. If BA0 is Low and BA1 is Low, bank0 is selected. If BA0 is Low and BA1 is High, bank1 is
selected. If BA0 is High and BA1 is Low, bank2 is selected. If BA0 is High and BA1 is High, bank3 is selected.
L
CKE0 (input pin): This pin determines whether or not the next CK is valid. If CKE is High, the next CK rising edge
is valid. If CKE is Low, the next CK rising edge is invalid. This pin is used for power-down mode, clock suspend
mode and self refresh mode.
u
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Pr
DQMB0 to DQMB7 (input pins): Read operation: If DQMB is High, the output buffer becomes High-Z. If the
DQMB is Low, the output buffer becomes Low-Z (The latency of DQMB during reading is 2 clocks).
Write operation: If DQMB is High, the previous data is held (the new data is not written). If DQMB is Low, the data
is written (The latency of DQMB during writing is 0 clock).
DQ0 to DQ63 (DQ pins): Data is input to and output from these pins.
VCC (power supply pins): 3.3V is applied.
VSS (power supply pins): Ground is connected.
Detailed Operation Part
Refer to the HM5225165B/HM5225805B/HM5225405B-75/A6/B6 datasheet.(E0082H)
ct
Preliminary Data Sheet E0202H10 (Ver. 1.0)
13
HB52RF328GB-B, HB52RD328GB-B
Physical Outline
Unit: mm
42.0 max.
(38.0)
3.80 max.
2.5 min.
15.0
30.0
EO
Component area
(front)
3.5 min.
1.0 min.
3.5 min.
1.0 min.
1
A
17.625
35.50
B
0.80 ± 0.08
0.875
L
37.0 ± 0.08
35.50
17.875
0.625
R1.0 ± 0.1
2
1.0 min.
Detail A
4.0 ± 0.1
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Component area
(back)
4-R1.0 ± 0.1
1.0 min.
Detail B
2.00 min.
0.37 ± 0.03
ct
1.0 ± 0.08
0.25 max.
5.0 ± 0.1
0.50
ECA-TS2-0028-01
Preliminary Data Sheet E0202H10 (Ver. 1.0)
14
HB52RF328GB-B, HB52RD328GB-B
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these
components to prevent damaging them.
When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact
with other modules may cause excessive mechanical stress, which may damage the modules.
EO
1
MDE0107
NOTES FOR CMOS DEVICES
PRECAUTION AGAINST ESD FOR MOS DEVICES
L
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
u
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2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
ct
Preliminary Data Sheet E0202H10 (Ver. 1.0)
15
HB52RF328GB-B, HB52RD328GB-B
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
EO
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
L
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
u
od
Pr
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
ct
Preliminary Data Sheet E0202H10 (Ver. 1.0)
16