HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability. • NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100 • NPN Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . 2.6dB • PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz • PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 57 • PNP Noise Figure (50Ω) at 900MHz . . . . . . . . . . . . 4.6dB • Small Package (EIAJ-SC74 Compliant) . . . . . . . SOT23-6 Applications • VHF/UHF Amplifiers • VHF/UHF Mixers Ordering Information PART NUMBER (BRAND) • IF Converters TEMP. RANGE (oC) PACKAGE PKG. NO. HFA3134IH96 (H04) -40 to 85 6 Ld SOT23 P6.064 HFA3135IH96 (H05) -40 to 85 6 Ld SOT23 P6.064 • Synchronous Detectors Pinouts HFA3134 (SOT23) TOP VIEW 1 HFA3135 (SOT23) TOP VIEW 6 1 6 Q1 2 3 Q2 4-450 Q1 5 2 4 3 5 Q2 4 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HFA3134, HFA3135 Absolute Maximum Ratings Thermal Information Collector to Emitter Voltage (RB ≤ 10kΩ to GND) . . . . . . . . . . . .11V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V Collector Current . . . . . . . . . . . . . . . . . . . . . . . .14mA at TJ =150oC 26mA at TJ =125oC Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA ESD Rating Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V (Per MIL-STD-883 Method 3015.7) Thermal Resistance (Typical, Note 1) θJA (oC/W) SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . 350 Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . .300oC (Soldering 10s, Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. 2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current specification. Electrical Specifications TA = 25oC PARAMETER SYMBOL TEST CONDITIONS TEST LEVEL (NOTE 3) MIN TYP MAX UNITS DC CHARACTERISTICS FOR HFA3134 (NPN) Collector-to-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 A 12 21 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 100µA, IB = 0 A 4 9 - V V(BR)CER IC = 100µA, RB = 10kΩ A 11 17 - V Emitter-to-Base Breakdown Voltage (Note 4) V(BR)EBO IE = 10µA, IC = 0 B - 6 - V Collector-Cutoff-Current ICEO VCE = 6V, IB = 0 A -5 - 5 nA Collector-Cutoff-Current ICBO VCB = 8V, IE = 0 A -5 - 5 nA Emitter-Cutoff-Current (Note 5) IEBO VEB = 1V, IC = 0 B - 1 - pA C - 1 - nA Collector-to-Collector Leakage Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 10mA, IB = 1mA A - 95 250 mV Base-to-Emitter Voltage (Note 5) VBE IC = 10mA, VCE = 2V A - 780 1000 mV Q1 to Q2 Base-to-Emitter Voltage Match (Note 5) ∆VBE IC = 10mA, VCE = 2V A - 1.2 6 mV IC = 1mA, VCE = 2V A - 1.0 6 mV IC = 0.1mA, VCE = 2V A - 0.7 6 mV IC = 10mA C - -1.5 - mV/oC IC = 10mA, VCE = 2V A 48 80 200 IC = 1mA, VCE = 2V A 48 87 200 IC = 0.1mA, VCE = 2V A 48 90 200 IC = 10mA, VCE = 5V A 48 96 200 IC = 1mA, VCE = 5V A 48 96 200 IC = 0.1mA, VCE = 5V A 48 100 200 Base-to-Emitter Voltage Drift DC Forward-Current Transfer Ratio (Note 5) hFE Q1 to Q2 Current Transfer Ratio Match ∆hFE 1mA ≤ IC ≤ 10mA, 1V ≤ VCE ≤ 5V A - 2 8 % Early Voltage VA IC = 1mA, ∆VCE = 3V A 20 30 - V 4-451 HFA3134, HFA3135 Electrical Specifications TA = 25oC TEST LEVEL (NOTE 3) MIN TYP MAX UNITS f = 1.0GHz, IC = 10mA, 1V ≤ VCE ≤ 5V, ZS = 50Ω B - 2.4 - dB f = 1.0GHz, IC = 1mA, 1V ≤ VCE ≤ 5V, ZS = 50Ω B - 2.6 - dB IC = 10mA, VCE = 5V B - 8.5 - GHz IC = 1mA, VCE = 5V B - 3 - GHz IC = 10mA, VCE = 5V B - 7.5 - GHz Base-to-Emitter Capacitance VBE = -0.5V B - 600 - fF Collector-to-Base Capacitance VCB = 3V B - 500 - fF TEST LEVEL (NOTE 3) MIN TYP MAX UNITS PARAMETER SYMBOL TEST CONDITIONS DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN) Noise Figure NF Current Gain-Bandwidth Product (Note 5) fT Power Gain-Bandwidth Product fMAX Electrical Specifications TA = 25oC PARAMETER SYMBOL TEST CONDITIONS DC CHARACTERISTICS FOR HFA3135 (PNP) Collector-to-Base Breakdown Voltage V(BR)CBO IC = -10µA, IE = 0 A 12 21 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = -100µA, IB = 0 A 4 14 - V V(BR)CER IC = -100µA, RB = 10kΩ A 11 23 - V Emitter-to-Base Breakdown Voltage (Note 4) V(BR)EBO IE = -10µA, IC = 0 B - 5 - V Collector-Cutoff-Current ICEO VCE = -6V, IB = 0 A -5 - 5 nA Collector-Cutoff-Current ICBO VCB = -8V, IE = 0 A -5 - 5 nA Emitter-Cutoff-Current IEBO VEB = -1V, IC = 0 B - TBD - pA B - 1 - nA Collector-to-Collector Leakage Collector-to-Emitter Saturation Voltage VCE(SAT) IC = -10mA, IB = -1mA A - 150 250 mV Base-to-Emitter Voltage VBE IC = -10mA, VCE = -2V A - 850 1000 mV Q1 to Q2 Base-to-Emitter Voltage Match ∆VBE IC = -10mA, VCE = -2V A - 1 6 mV IC = -1mA, VCE = -2V A - 1 6 mV IC = -0.1mA, VCE = -2V A - 2 6 mV IC = -10mA, VCE = -2V A 15 40 125 IC = -1mA, VCE = -2V A 15 47 125 IC = -0.1mA, VCE = -2V A 15 52 125 IC = -10mA, VCE = -5V A 15 47 125 IC = -1mA, VCE = -5V A 15 53 125 IC = -0.1mA, VCE = -5V A 15 57 125 DC Forward-Current Transfer Ratio hFE Q1 to Q2 Current Gain Match ∆hFE -1mA ≤ IC ≤ -10mA, -1V ≤ VCE ≤ -5V A - 1 8 % Early Voltage VA IC = -1mA, ∆VCE = -3V A 15 24 - V IC = -10mA C - -1.4 - mV/oC Base-to-Emitter Voltage Drift 4-452 HFA3134, HFA3135 TA = 25oC Electrical Specifications PARAMETER TEST LEVEL (NOTE 3) MIN TYP MAX UNITS f = 900MHz, IC = -10mA, -1V ≤ VCE ≤ -5V, ZS = 50Ω B - 5.2 - dB f = 900MHz, IC = -1mA, -1V ≤ VCE ≤ -5V, ZS = 50Ω B - 4.6 - dB SYMBOL TEST CONDITIONS DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP) Noise Figure NF Current Gain-Bandwidth Product fT IC = -10mA, VCE = -5V B - 7 - GHz Power Gain-Bandwidth Product fMAX IC = -10mA, VCE = -5V B - TBD - GHz Base-to-Emitter Capacitance VBE = 0.5V B - 550 - fF Collector-to-Base Capacitance VCB = -3V B - 400 - fF NOTES: 3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical f+++++++++++++or Information Only. 4. Measuring VEBO can degrade the transistor hFE and hFE match. 5. See Typical Performance Curves for more information. Typical Performance Curves IB = 200µA 20 Q1 COLLECTOR CURRENT (mA) 18 Q2 IB = 160µA 16 Q1 14 Q2 IB = 120µA 12 Q1 10 Q2 8 IB = 80µA Q1 6 Q2 IB = 40µA Q1 4 Q2 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE 4-453 COLLECTOR CURRENT AND BASE CURRENT (A) TA = 25oC, Unless Otherwise Specified Q1 100m Q2 10m Q1 1m Q2 100µ IC 10µ 1µ 100n IB 10n 1n 100p 10p 0.4 0.5 0.6 0.8 0.7 0.9 BASE TO EMITTER VOLTAGE (V) 1.0 FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs BASE TO EMITTER VOLTAGE HFA3134, HFA3135 Typical Performance Curves TA = 25oC, Unless Otherwise Specified (Continued) 130 10 120 Q1 VCE = 5V DC CURRENT GAIN 100 90 80 VCE = 3V Q2 70 VCE = 1V 60 VCE = 5V 9 GAIN BANDWIDTH (GHz) 110 Q1 Q2 50 VCE = 3V 8 7 6 5 4 VCE = 1V 3 2 40 1 30 20 1n 1n 100n 1µ 10µ 100µ 1m 10m 0.1 100m 1 10 100 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (A) FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT 1n EMITTER LEAKAGE CURRENT (A) COLLECTOR = OPEN 100p 10p 1p 0.1p 0 -0.3 -0.6 -0.9 -1.2 -1.5 -1.8 -2.1 -2.4 -2.7 -3.0 BASE TO EMITTER VOLTAGE (V) FIGURE 5. NPN EMITTER CUTTOFF CURRENT vs BASE TO EMITTER VOLTAGE All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. 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