HFA08PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level BENEFITS • • • • • Cathode to base 2 1 Anode 1 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 3 Anode 2 HFA08PB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A continuous current, the HFA08PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-247AC modified PRODUCT SUMMARY VR 1200 V VF at 8 A at 25 °C 3.3 V IF(AV) 8A trr (typical) 28 ns TJ (maximum) 150 °C Qrr (typical) 140 nC dI(rec)M/dt (typical) at 125 °C 85 A/µs IRRM (typical) 4.5 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Maximum continuous forward current IF TC = 100 °C VALUES UNITS 1200 V 8 Single pulse forward current IFSM 130 Maximum repetitive forward current IFRM 32 Maximum power dissipation PD Operating junction and storage temperature range Document Number: 93037 Revision: 30-Jul-08 TC = 25 °C 73.5 TC = 100 °C 29 TJ, TStg For technical questions, contact: [email protected] - 55 to + 150 A W °C www.vishay.com 1 HFA08PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 8 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 µA Maximum forward voltage VFM IF = 16 A IF = 8.0 A See fig. 1 MIN. TYP. MAX. 1200 - - - 2.6 3.3 - 3.4 4.3 UNITS V IF = 8.0 A, TJ = 125 °C - 2.4 3.1 VR = VR rated - 0.31 10 - 135 1000 - 11 20 pF - 8.0 - nH UNITS Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 µA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 28 - trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V trr1 TJ = 25 °C - 63 95 trr2 TJ = 125 °C - 106 160 - 4.5 8.0 - 6.2 11 - 140 380 - 335 880 IRRM1 TJ = 25 °C IRRM2 TJ = 125 °C IF = 8.0 A dIF/dt = 200 A/µs VR = 200 V ns A Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 133 - dI(rec)M/dt2 TJ = 125 °C - 85 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.7 nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - - 0.21 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style TO-247AC modified (JEDEC) For technical questions, contact: [email protected] K/W g HFA08PB120 Document Number: 93037 Revision: 30-Jul-08 HFA08PB120 HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 8 A 100 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 150 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C 100 TJ = 100 °C 10 1 TJ = 25 °C 0.1 1 0.01 2 0 4 8 6 0 10 300 600 900 1200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 10 000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93037 Revision: 30-Jul-08 For technical questions, contact: [email protected] www.vishay.com 3 HFA08PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 8 A 160 1200 IF = 8 A IF = 4 A 140 1000 800 Qrr (nC) trr (ns) 120 100 80 600 200 VR = 160 V TJ = 125 °C TJ = 25 °C 20 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 20 1000 VR = 160 V TJ = 125 °C TJ = 25 °C 12 IF = 8 A IF = 4 A dI(rec)M/dt (A/µs) 16 Irr (A) IF = 8 A IF = 4 A 400 60 40 VR = 160 V TJ = 125 °C TJ = 25 °C IF = 8 A IF = 4 A 8 100 VR = 160 V TJ = 125 °C TJ = 25 °C 4 0 100 www.vishay.com 4 1000 10 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt For technical questions, contact: [email protected] Document Number: 93037 Revision: 30-Jul-08 HFA08PB120 HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 8 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93037 Revision: 30-Jul-08 For technical questions, contact: [email protected] www.vishay.com 5 HFA08PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 8 A ORDERING INFORMATION TABLE Device code HF A 08 PB 120 - 1 2 3 4 5 6 1 - HEXFRED® family 2 - Process designator: A = Electron irradiated B = Platinum diffused 3 - Current rating (08 = 8 A) 4 - Package outline (PB = TO-247, 2 pins) 5 - Voltage rating (120 = 1200 V) 6 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95253 Part marking information http://www.vishay.com/doc?95255 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93037 Revision: 30-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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