HFA32PA120CPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 16 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level Pb-free Available RoHS* COMPLIANT BENEFITS TO-247AC • • • • • 1 3 Anode Anode 2 1 2 Common cathode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION HFA32PA120C is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A per leg continuous current, the HFA32PA120C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA32PA120C is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR per leg 1200 V VF at 16 A at 25 °C 3.0 V IF(AV) 2 x 16 A trr (typical) per leg 30 ns TJ (maximum) 150 °C Qrr (typical) per leg 260 nC IRRM (typical) per leg 5.8 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF TC = 100 °C VALUES UNITS 1200 V 16 32 Single pulse forward current IFSM 190 Maximum repetitive forward current IFRM 64 Maximum power dissipation PD Operating junction and storage temperature range TC = 25 °C 151 TC = 100 °C 60 TJ, TStg - 55 to + 150 A °C W * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94073 Revision: 06-Aug-08 For technical questions, contact: [email protected] www.vishay.com 1 HFA32PA120CPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 16 A ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 µA Maximum forward voltage VFM IF = 32 A IF = 16 A See fig. 1 MIN. TYP. MAX. 1200 - - - 2.5 3.0 - 3.2 3.93 UNITS V IF = 16 A, TJ = 125 °C - 2.3 2.7 VR = VR rated - 0.75 20 - 375 2000 - 27 40 pF - 8.0 - nH Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 µA DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 30 - trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V trr1 TJ = 25 °C - 90 135 trr2 TJ = 125 °C - 164 245 - 5.8 10 - 8.3 15 - 260 675 - 680 1838 IRRM1 TJ = 25 °C IRRM2 TJ = 125 °C IF = 16 A dIF/dt = 200 A/µs VR = 200 V UNITS ns A Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 120 - dI(rec)M/dt2 TJ = 125 °C - 76 - MIN. TYP. MAX. UNITS - - 300 °C - - 0.83 nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.50 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style TO-247AC (JEDEC) For technical questions, contact: [email protected] K/W g HFA32PA120C Document Number: 94073 Revision: 06-Aug-08 HFA32PA120CPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 16 A 1000 TJ = 150°C 100 100 T = 125°C J 10 1 TJ = 25°C 0.1 A 0.01 0 200 400 600 800 1000 1200 10 Fig. 2 - Typical Reverse Current vs. Reverse Voltage T = 150°C J T = 125°C J 1000 T = 25°C J 1 100 T J = 25°C 10 0.1 0 2 4 6 A 1 8 1 10 100 1000 10000 Forward Voltage Drop - V FM (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 1 0.1 D D D D D D = = = = = = 0.50 0.20 0.10 0.05 0.02 0.01 PDM Single Pulse (Thermal Resistance) t1 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak TJ = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94073 Revision: 06-Aug-08 For technical questions, contact: [email protected] www.vishay.com 3 HFA32PA120CPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 16 A 1600 270 V R = 200V T J = 125 °C T J = 25 °C 1400 220 1200 If = 16 A If = 8 A If = 16A If = 8A 1000 170 800 120 600 400 70 200 VR = 200V TJ = 125°C TJ = 25°C 20 100 1000 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 30 25 20 0 100 1000 Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 10000 V R = 200V T J = 125°C T J = 25°C V R = 200V T J = 125°C T J = 25°C 1000 If = 16 A If = 8 A If = 16A If = 8A 15 100 10 5 0 100 1000 10 100 1000 di f Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) www.vishay.com 4 Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) For technical questions, contact: [email protected] Document Number: 94073 Revision: 06-Aug-08 HFA32PA120CPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 16 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94073 Revision: 06-Aug-08 For technical questions, contact: [email protected] www.vishay.com 5 HFA32PA120CPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 16 A ORDERING INFORMATION TABLE Device code HF A 32 PA 120 C PbF 1 2 3 4 5 6 7 1 - HEXFRED® family 2 - Process designator: A = Subs. electron irradiated B = Subs. platinum 3 - Current rating (32 = 32 A) 4 - Package outline (PA = TO-247, 3 pins) 5 - Voltage rating (120 = 1200 V) 6 - Configuration (C = Center tap common cathode) 7 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95223 Part marking information http://www.vishay.com/doc?95226 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94073 Revision: 06-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1