HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 13A, 1200V, NPT Series N-Channel IGBT Features The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. • 13A, 1200V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Avalanche Rated Formerly Developmental Type TA49313. Ordering Information PART NUMBER File Number 4680.2 • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.intersil.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging PACKAGE BRAND HGTP2N120CN TO-220AB 2N120CN HGTD2N120CNS TO-252AA 2N120C HGT1S2N120CNS TO-263AB 2N120CN JEDEC TO-220AB E COLLECTOR (FLANGE) C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB and TO-252AA variant in Tape and Reel, e.g., HGT1S2N120CNS9A. Symbol C JEDEC TO-252AA COLLECTOR (FLANGE) G G E E JEDEC TO-263AB COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER™ is a trademark of Analogy, Inc. HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC HGTD2N120CNS HGTP2N120CN, HGT1S2N120CNS UNITS 1200 V 13 7 20 ±20 ±30 13A at 1200V 104 0.83 18 -55 to 150 A A A V V W W/oC mJ oC 300 oC 260 8 oC µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 3A, L = 4mH. 3. VCE(PK) = 840V, TJ = 125oC, RG = 51Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V TC = 25oC - - 100 µA TC = 125oC - 100 - µA TC = 150oC - - 1.0 mA TC = 25oC - 2.05 2.40 V TC = 150oC - 2.75 3.50 V 6.4 6.7 - V - - ±250 nA 13 - - A Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage ICES VCE(SAT) VGE(TH) VCE = BVCES IC = 2.6A, VGE = 15V IC = 45µA, VCE = VGE Gate to Emitter Leakage Current IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 2.6A, VCE = 0.5 BVCES - 10.2 - V IC = 2.6A, VCE = 0.5 BVCES VGE = 15V - 30 36 nC VGE = 20V - 36 43 nC On-State Gate Charge QG(ON) 2 HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 2.6A VCE = 0.8 BVCES VGE = 15V RG = 51Ω L = 5mH Test Circuit (Figure 18) MIN TYP MAX UNITS - 25 30 ns - 11 15 ns - 205 220 ns - 260 320 ns - 96 - µJ Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 425 590 µJ Turn-Off Energy (Note 5) EOFF - 355 390 µJ Current Turn-On Delay Time td(ON)I - 21 25 ns - 11 15 ns - 225 240 ns - 360 420 ns - 96 - µJ Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI IGBT and Diode at TJ = 150oC, ICE = 2.6A, VCE = 0.8 BVCES , VGE = 15V, RG = 51Ω, L = 5mH, Test Circuit (Figure 18) Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 800 1100 µJ Turn-Off Energy (Note 5) EOFF - 530 580 µJ Thermal Resistance Junction To Case RθJC - - 1.20 oC/W NOTES: 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 14 VGE = 15V 12 10 8 6 4 2 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 3 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 16 TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH TC TC = 75oC,VGE = 15V IDEAL DIODE 100 VGE 75oC 15V 75oC 12V 50 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 1.2oC/W, SEE NOTES 10 1 TC VGE 110oC 15V o 110 C 12V 2 3 4 ICE , COLLECTOR TO EMITTER CURRENT (A) VCE = 840V, RG = 51Ω, TJ = 125oC 40 40 30 30 20 20 ISC TC = -55oC 4 TC = 150oC 2 DUTY CYCLE <0.5%, VGE = 12V 250µS PULSE TEST 0 5 6 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) 6 4 13 14 15 DUTY CYCLE <0.5%, VGE = 15V 250µs PULSE TEST 8 TC = -55oC TC = 25oC 6 TC = 150oC 4 2 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 900 EOFF, TURN-OFF ENERGY LOSS (µJ) 2000 EON2 , TURN-ON ENERGY LOSS (µJ) 12 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) RG = 51Ω, L = 5mH, VCE = 960V 1500 11 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME TC = 25oC 3 0 10 VGE , GATE TO EMITTER VOLTAGE (V) 8 2 10 0 5 10 1 tSC 10 FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 0 50 50 ISC , PEAK SHORT CIRCUIT CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) 200 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves TJ = 150oC, VGE = 12V, VGE = 15V 1000 500 TJ = 25oC, VGE = 12V, VGE = 15V 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 RG = 51Ω, L = 5mH, VCE = 960V 800 700 TJ = 150oC, VGE = 12V OR 15V 600 500 400 TJ = 25oC, VGE = 12V OR 15V 300 200 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Typical Performance Curves Unless Otherwise Specified (Continued) 40 RG = 51Ω, L = 5mH, VCE = 960V RG = 51Ω, L = 5mH, VCE = 960V 35 40 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 45 35 30 TJ = 25oC, TJ = 150oC, VGE = 12V 25 20 1.5 2.0 2.5 3.0 3.5 4.0 4.5 TJ = 25oC, TJ = 150oC, VGE = 12V 25 20 15 10 TJ = 25oC, TJ = 150oC, VGE = 15V 5 TJ = 25oC, TJ = 150oC, VGE = 15V 15 1.0 30 0 1.0 5.0 1.5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 4.0 4.5 5.0 RG = 51Ω, L = 5mH, VCE = 960V VGE = 12V, VGE = 15V, TJ = 150oC 300 250 200 500 TJ = 150oC, VGE = 12V OR 15V 400 300 200 150 TJ = 25oC, VGE = 12V OR 15V VGE = 12V, VGE = 15V, TJ = 25oC 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 100 1.0 5.0 ICE , COLLECTOR TO EMITTER CURRENT (A) 16 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VCE = 20V 250µS PULSE TEST 30 25 20 TC = -55oC 10 TC = 25oC 2.0 2.5 3.0 3.5 4.0 4.5 5.0 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 40 15 1.5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 5 3.5 600 350 35 3.0 700 RG = 51Ω, L = 5mH, VCE = 960V tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 2.5 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 400 ICE , COLLECTOR TO EMITTER CURRENT (A) 2.0 ICE , COLLECTOR TO EMITTER CURRENT (A) TC = 150oC IG(REF) = 1mA, RL = 260Ω, TC = 25oC 14 VCE = 1200V 12 10 8 VCE = 400V VCE = 800V 6 4 2 0 0 7 8 9 10 11 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 5 15 0 5 10 15 20 25 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 30 HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Unless Otherwise Specified (Continued) 2.0 C, CAPACITANCE (nF) FREQUENCY = 1MHz 1.5 CIES 1.0 0.5 COES CRES 0 0 5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 5 DUTY CYCLE <0.5%, TC = 110oC 250µs PULSE TEST 4 VGE = 15V 3 VGE = 10V 2 1 0 0 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 0.5 1.0 1.5 2.0 2.5 3.0 FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 100 0.5 0.2 0.1 10-1 t1 0.05 PD 0.02 0.01 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms RHRD4120 90% 10% VGE EON2 L = 5mH EOFF VCE RG = 51Ω 90% + - VDD = 960V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT 6 3.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 19. SWITCHING TEST WAVEFORMS HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required, an external Zener is recommended. 7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.