HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1993.05.15 Revised Date : 2001.02.14 Page No. : 1/3 MICROELECTRONICS CORP. HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ....................................................................................................... -50 ~ +150 °C Junction Temperature ............................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................................... 3.5 W Total Power Dissipation (Tc=25°C) ................................................................................................. 30 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................ 600 V BVCEO Collector to Emitter Voltage ............................................................................................. 400 V BVEBO Emitter to Base Voltage ....................................................................................................... 8 V IC Collector Current (DC).................................................................................................................. 1 A IC Collector Current (Pulse) .............................................................................................................. 2 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 Min. 600 400 8 10 10 6 Typ. - Max. 10 10 0.8 0.9 1.2 1.8 50 - Unit V V V uA uA V V V V Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank Range HLB123T B1 10-17 B2 13-22 B3 18-27 B4 23-32 B5 28-37 B6 33-42 B7 38-47 B8 43-50 HSMC Product Specification HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1993.05.15 Revised Date : 2001.02.14 Page No. : 2/3 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 1000 100 Saturation Voltage (mV) hFE VBE(sat) @ IC=10IB hFE @ VCE=5V 100 VCE(sat) @ IC=10IB 10 1 10 1 10 100 1 1000 Collector Current (mA) 10 100 1000 Collector Current (mA) On Voltage & Collector Current Capacitance & Reverse-Biased Voltage 1000 100 Capacitance (pF) On Voltage (mV) VBE(on) @ VCE=5V 100 Cob 10 1 1 10 100 1000 0.1 Collector Current (mA) 1 10 100 Reverse-Biased Voltage (V) Switching Time & Collector Current Safe Operating Area 10000 10.0 VCC=100V, IC=5IB1=-5IB2 Collector Current (mA) Switching Time (us) Tstg 1.0 Tf 1000 PT=1ms 100 PT=100ms PT=1s Ton 0.1 10 0.1 1.0 Collector Current (A) HLB123T 1 10 100 1000 Forward Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1993.05.15 Revised Date : 2001.02.14 Page No. : 3/3 MICROELECTRONICS CORP. TO-126 Dimension D I E J Marking : K A M HSMC Logo Part Number Date Code α3 B 1 2 3 Product Series Rank α4 G Ink Marking Style : Pin 1.Emitter 2.Collector 3.Base C F L H α1 3-Lead TO-126 Plastic Package HSMC Package Code : T α2 *:Typical Inches Min. Max. *3° *3° *3° *3° 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 DIM α1 α2 α3 α4 A B C D E Millimeters Min. Max. *3° *3° *3° *3° 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes : 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 • Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 • Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HLB123T HSMC Product Specification