HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM E0082H10 (1st edition) (Previous ADE-203-1073B (Z)) Jan. 31, 2001 Description The HM5225165B is a 256-Mbit SDRAM organized as 4194304-word × 16-bit × 4 bank. The HM5225805B is a 256-Mbit SDRAM organized as 8388608-word × 8-bit × 4 bank. The HM5225405B is a 256-Mbit SDRAM organized as 16777216-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II. Features • • • • • • • • 3.3 V power supply Clock frequency: 133 MHz/100 MHz (max) LVTTL interface Single pulsed RAS 4 banks can operate simultaneously and independently Burst read/write operation and burst read/single write operation capability Programmable burst length: 1/2/4/8 2 variations of burst sequence Sequential (BL = 1/2/4/8) Interleave (BL = 1/2/4/8) • Programmable CAS latency: 2/3 Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. HM5225165B/HM5225805B/HM5225405B-75/A6/B6 • Byte control by DQM : DQM (HM5225805B/HM5225405B) : DQMU/DQML (HM5225165B) • Refresh cycles: 8192 refresh cycles/64 ms • 2 variations of refresh Auto refresh Self refresh Ordering Information Frequency CAS latency Package HM5225165BTT-75* HM5225165BTT-A6 HM5225165BTT-B6* 2 133 MHz 100 MHz 100 MHz 3 2/3 3 400-mil 54-pin plastic TSOP II (TTP-54D) HM5225165BLTT-75* 1 HM5225165BLTT-A6 HM5225165BLTT-B6* 2 133 MHz 100 MHz 100 MHz 3 2/3 3 HM5225805BTT-75* 1 HM5225805BTT-A6 HM5225805BTT-B6* 2 133 MHz 100 MHz 100 MHz 3 2/3 3 HM5225805BLTT-75* 1 HM5225805BLTT-A6 HM5225805BLTT-B6* 2 133 MHz 100 MHz 100 MHz 3 2/3 3 HM5225405BTT-75* 1 HM5225405BTT-A6 HM5225405BTT-B6* 2 133 MHz 100 MHz 100 MHz 3 2/3 3 HM5225405BLTT-75* 1 HM5225405BLTT-A6 HM5225405BLTT-B6* 2 133 MHz 100 MHz 100 MHz 3 2/3 3 Type No. 1 Notes: 1. 100 MHz operation at CAS latency = 2. 2. 66 MHz operation at CAS latency = 2. Data Sheet E0082H10 2 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Pin Arrangement (HM5225165B) 54-pin TSOP VCC DQ0 VCCQ DQ1 DQ2 VSSQ DQ3 DQ4 VCCQ DQ5 DQ6 VSSQ DQ7 VCC DQML WE CAS RAS CS BA0 BA1 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VCCQ DQ12 DQ11 VSSQ DQ10 DQ9 VCCQ DQ8 VSS NC DQMU CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS (Top view) Pin Description Pin name Function Pin name Function A0 to A12, BA0, BA1 Address input WE Write enable Row address A0 to A12 DQMU/DQML Input/output mask Column address A0 to A8 CLK Clock input Bank select address BA0/BA1 (BS) CKE Clock enable DQ0 to DQ15 Data-input/output VCC Power for internal circuit CS Chip select VSS Ground for internal circuit RAS Row address strobe command VCCQ Power for DQ circuit CAS Column address strobe command VSS Q Ground for DQ circuit NC No connection Data Sheet E0082H10 3 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Pin Arrangement (HM5225805B) 54-pin TSOP VCC DQ0 VCCQ NC DQ1 VSSQ NC DQ2 VCCQ NC DQ3 VSSQ NC VCC NC WE CAS RAS CS BA0 BA1 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ7 VSSQ NC DQ6 VCCQ NC DQ5 VSSQ NC DQ4 VCCQ NC VSS NC DQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS (Top view) Pin Description Pin name Function Pin name Function A0 to A12, BA0, BA1 Address input WE Write enable Row address A0 to A12 DQM Input/output mask Column address A0 to A9 CLK Clock input Bank select address BA0/BA1 (BS) CKE Clock enable DQ0 to DQ7 Data-input/output VCC Power for internal circuit CS Chip select VSS Ground for internal circuit RAS Row address strobe command VCCQ Power for DQ circuit CAS Column address strobe command VSS Q Ground for DQ circuit NC No connection Data Sheet E0082H10 4 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Pin Arrangement (HM5225405B) 54-pin TSOP VCC NC VCCQ NC DQ0 VSSQ NC NC VCCQ NC DQ1 VSSQ NC VCC NC WE CAS RAS CS BA0 BA1 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS NC VSSQ NC DQ3 VCCQ NC NC VSSQ NC DQ2 VCCQ NC VSS NC DQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS (Top view) Pin Description Pin name Function Pin name Function A0 to A12, BA0, BA1 Address input WE Write enable Row address A0 to A12 DQM Input/output mask Column address A0 to A9, A11 CLK Clock input Bank select address BA0/BA1 (BS) CKE Clock enable DQ0 to DQ3 Data-input/output VCC Power for internal circuit CS Chip select VSS Ground for internal circuit RAS Row address strobe command VCCQ Power for DQ circuit CAS Column address strobe command VSS Q Ground for DQ circuit NC No connection Data Sheet E0082H10 5 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Block Diagram (HM5225165B) A0 to A12, BA0, BA1 A0 to A12, BA0, BA1 A0 to A8 Column address buffer Bank 1 8192 row X 512 column X 16 bit Input buffer Row decoder Memory array Bank 2 8192 row X 512 column X 16 bit Sense amplifier & I/O bus 8192 row X 512 column X 16 bit Memory array Sense amplifier & I/O bus Bank 0 Row decoder Column decoder Memory array Sense amplifier & I/O bus Row decoder Column decoder Sense amplifier & I/O bus Column decoder Row decoder Refresh counter Row address buffer Column decoder Column address counter Memory array Bank 3 8192 row X 512 column X 16 bit Control logic & timing generator Output buffer WE DQMU /DQML CAS CS RAS CLK Data Sheet E0082H10 6 CKE DQ0 to DQ15 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Block Diagram (HM5225805B) A0 to A12, BA0, BA1 A0 to A12, BA0, BA1 A0 to A9 Column address buffer 8192 row X 1024 column X 8 bit Input buffer Memory array Bank 2 8192 row X 1024 column X 8 bit Sense amplifier & I/O bus Bank 1 Row decoder Column decoder Memory array Column decoder Memory array Bank 3 8192 row X 1024 column X 8 bit Control logic & timing generator Output buffer WE DQM CAS CS RAS DQ0 to DQ7 CLK 8192 row X 1024 column X 8 bit Sense amplifier & I/O bus Bank 0 Column decoder Sense amplifier & I/O bus Column decoder Memory array Row decoder Sense amplifier & I/O bus Row decoder Row decoder Refresh counter Row address buffer CKE Column address counter Data Sheet E0082H10 7 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Block Diagram (HM5225405B) A0 to A12, BA0, BA1 A0 to A12, BA0, BA1 A0 to A9, A11 Column address buffer Bank 1 8192 row X 2048 column X 4 bit Input buffer Row decoder Memory array Bank 2 8192 row X 2048 column X 4 bit Sense amplifier & I/O bus Memory array Column decoder 8192 row X 2048 column X 4 bit Sense amplifier & I/O bus Bank 0 Column decoder Sense amplifier & I/O bus Column decoder Memory array Row decoder Sense amplifier & I/O bus Row decoder Row decoder Refresh counter Row address buffer Column decoder Column address counter Memory array Bank 3 8192 row X 2048 column X 4 bit Control logic & timing generator Output buffer WE DQM CAS CS RAS CLK Data Sheet E0082H10 8 CKE DQ0 to DQ3 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Pin Functions CLK (input pin): CLK is the master clock input to this pin. The other input signals are referred at CLK rising edge. CS (input pin): When CS is Low, the command input cycle becomes valid. When CS is High, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. RAS, CAS, and WE (input pins): Although these pin names are the same as those of conventional DRAMs, they function in a different way. These pins define operation commands (read, write, etc.) depending on the combination of their voltage levels. For details, refer to the command operation section. A0 to A12 (input pins): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active command cycle CLK rising edge. Column address (AY0 to AY8; HM5225165B, AY0 to AY9; HM5225805B, AY0 to AY9, AY11; HM5225405B) is determined by A0 to A8, A9 or A11 (A8; HM5225165B, A9; HM5225805B, A9, A11; HM5225405B) level at the read or write command cycle CLK rising edge. And this column address becomes burst access start address. A10 defines the precharge mode. When A10 = High at the precharge command cycle, all banks are precharged. But when A10 = Low at the precharge command cycle, only the bank that is selected by BA0/BA1 (BS) is precharged. For details refer to the command operation section. BA0/BA1 (input pin): BA0/BA1 are bank select signal (BS). The memory array of the HM5225165B, HM5225805B, the HM5225405B is divided into bank 0, bank 1, bank 2 and bank 3. HM5225165B contain 8192-row × 512-column × 16-bit. HM5225805B contain 8192-row × 1024-column × 8-bit. HM5225405B contain 8192-row × 2048-column × 4-bit. If BA0 is Low and BA1 is Low, bank 0 is selected. If BA0 is Low and BA1 is High, bank 1 is selected. If BA0 is High and BA1 is Low, bank 2 is selected. If BA0 is High and BA1 is High, bank 3 is selected. CKE (input pin): This pin determines whether or not the next CLK is valid. If CKE is High, the next CLK rising edge is valid. If CKE is Low, the next CLK rising edge is invalid. This pin is used for power-down mode, clock suspend mode and self refresh mode. DQM, DQMU/DQML (input pins): DQM, DQMU/DQML controls input/output buffers. Read operation: If DQM, DQMU/DQML is High, the output buffer becomes High-Z. If the DQM, DQMU/DQML is Low, the output buffer becomes Low-Z. (The latency of DQM, DQMU/DQML during reading is 2 clocks.) Write operation: If DQM, DQMU/DQML is High, the previous data is held (the new data is not written). If DQM, DQMU/DQML is Low, the data is written. (The latency of DQM, DQMU/DQML during writing is 0 clock.) DQ0 to DQ15 (DQ pins): Data is input to and output from these pins (DQ0 to DQ15; HM5225165B, DQ0 to DQ7; HM5225805B, DQ0 to DQ3; HM5225405B). VCC and VCC Q (power supply pins): 3.3 V is applied. (VCC is for the internal circuit and VCCQ is for the output buffer.) Data Sheet E0082H10 9 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 VSS and V SS Q (power supply pins): Ground is connected. (VSS is for the internal circuit and VSSQ is for the output buffer.) Command Operation Command Truth Table The SDRAM recognizes the following commands specified by the CS, RAS, CAS, WE and address pins. CKE CS RAS A0 CAS WE BA0/BA1 A10 to A12 Command Symbol n-1 n Ignore command DESL H × H × × × × × × No operation NOP H × L H H H × × × Column address and read command READ H × L H L H V L V Read with auto-precharge H × L H L H V H V Column address and write command WRIT H × L H L L V L V Write with auto-precharge H × L H L L V H V Row address strobe and bank active ACTV H × L L H H V V V Precharge select bank PRE H × L L H L V L × Precharge all bank PALL H × L L H L × H × Refresh REF/SELF H V L L L H × × × Mode register set MRS × L L L L V V V READ A WRIT A H Note: H: VIH. L: V IL. ×: VIH or VIL. V: Valid address input Ignore command [DESL]: When this command is set (CS is High), the SDRAM ignore command input at the clock. However, the internal status is held. No operation [NOP]: This command is not an execution command. However, the internal operations continue. Column address strobe and read command [READ]: This command starts a read operation. In addition, the start address of burst read is determined by the column address (AY0 to AY8; HM5225165B, AY0 to AY9; HM5225805B, AY0 to AY9, AY11; HM5225405B) and the bank select address (BS). After the read operation, the output buffer becomes High-Z. Read with auto-precharge [READ A]: This command automatically performs a precharge operation after a burst read with a burst length of 1, 2, 4 or 8. Data Sheet E0082H10 10 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Column address strobe and write command [WRIT]: This command starts a write operation. When the burst write mode is selected, the column address (AY0 to AY8; HM5225165B, AY0 to AY9; HM5225805B, AY0 to AY9, AY11; HM5225405B) and the bank select address (BA0/BA1) become the burst write start address. When the single write mode is selected, data is only written to the location specified by the column address (AY0 to AY8; HM5225165B, AY0 to AY9; HM5225805B, AY0 to AY9, AY11; HM5225405B) and the bank select address (BA0/BA1). Write with auto-precharge [WRIT A]: This command automatically performs a precharge operation after a burst write with a length of 1, 2, 4 or 8, or after a single write operation. Row address strobe and bank activate [ACTV]: This command activates the bank that is selected by BA0/BA1 (BS) and determines the row address (AX0 to AX12). When BA0 and BA1 are Low, bank 0 is activated. When BA0 is Low and BA1 is High, bank 1 is activated. When BA0 is High and BA1 is Low, bank 2 is activated. When BA0 and BA1 are High, bank 3 is activated. Precharge selected bank [PRE]: This command starts precharge operation for the bank selected by BA0/BA1. If BA0 and BA1 are Low, bank 0 is selected. If BA0 is Low and BA1 is High, bank 1 is selected. If BA0 is High and BA1 is Low, bank 2 is selected. If BA0 and BA1 are High, bank 3 is selected. Precharge all banks [PALL]: This command starts a precharge operation for all banks. Refresh [REF/SELF]: This command starts the refresh operation. There are two types of refresh operation, the one is auto-refresh, and the other is self-refresh. For details, refer to the CKE truth table section. Mode register set [MRS]: The SDRAM has a mode register that defines how it operates. The mode register is specified by the address pins (A0 to BA0 and BA1) at the mode register set cycle. For details, refer to the mode register configuration. After power on, the contents of the mode register are undefined, execute the mode register set command to set up the mode register. Data Sheet E0082H10 11 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 DQM Truth Table (HM5225165B) CKE Command Symbol n-1 n DQMU DQML Upper byte (DQ8 to DQ15) write enable/output enable ENBU H × L × Lower byte (DQ0 to DQ7) write enable/output enable H × × L Upper byte (DQ8 to DQ15) write inhibit/output disable MASKU H × H × Lower byte (DQ0 to DQ7) write inhibit/output disable H × × H ENBL MASKL Note: H: VIH. L: V IL. ×: VIH or VIL. Write: IDID is needed. Read: I DOD is needed. DQM Truth Table (HM5225805B/HM5225405B) CKE Command Symbol n-1 n DQM Write enable/output enable ENB H × L Write inhibit/output disable MASK H × H Note: H: VIH. L: V IL. ×: VIH or VIL. Write: IDID is needed. Read: I DOD is needed. The SDRAM can mask input/output data by means of DQM, DQMU/DQML. DQMU masks the upper byte and DQML masks the lower byte. (HM5225165B) During reading, the output buffer is set to Low-Z by setting DQM, DQMU/DQML to Low, enabling data output. On the other hand, when DQM, DQMU/DQML is set to High, the output buffer becomes High-Z, disabling data output. During writing, data is written by setting DQM, DQMU/DQML to Low. When DQM, DQMU/DQML is set to High, the previous data is held (the new data is not written). Desired data can be masked during burst read or burst write by setting DQMU/DQML. For details, refer to the DQM, DQMU/DQML control section of the SDRAM operating instructions. Data Sheet E0082H10 12 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 CKE Truth Table CKE Current state Command n-1 n CS RAS CAS WE Address Active Clock suspend mode entry H L × × × × × Any Clock suspend L L × × × × × Clock suspend Clock suspend mode exit L H × × × × × Idle Auto-refresh command (REF) H H L L L H × Idle Self-refresh entry (SELF) H L L L L H × Idle Power down entry H L L H H H × H L H × × × × L H L H H H × L H H × × × × L H L H H H × L H H × × × × Self refresh Power down Self refresh exit (SELFX) Power down exit Note: H: VIH. L: V IL. ×: VIH or VIL. Clock suspend mode entry: The SDRAM enters clock suspend mode from active mode by setting CKE to Low. If command is input in the clock suspend mode entry cycle, the command is valid. The clock suspend mode changes depending on the current status (1 clock before) as shown below. ACTIVE clock suspend: This suspend mode ignores inputs after the next clock by internally maintaining the bank active status. READ suspend and READ with Auto-precharge suspend: The data being output is held (and continues to be output). WRITE suspend and WRIT with Auto-precharge suspend: In this mode, external signals are not accepted. However, the internal state is held. Clock suspend: During clock suspend mode, keep the CKE to Low. Clock suspend mode exit: The SDRAM exits from clock suspend mode by setting CKE to High during the clock suspend state. IDLE: In this state, all banks are not selected, and completed precharge operation. Auto-refresh command [REF]: When this command is input from the IDLE state, the SDRAM starts autorefresh operation. (The auto-refresh is the same as the CBR refresh of conventional DRAMs.) During the auto-refresh operation, refresh address and bank select address are generated inside the SDRAM. For every auto-refresh cycle, the internal address counter is updated. Accordingly, 8192 times are required to refresh the entire memory. Before executing the auto-refresh command, all the banks must be in the IDLE state. In addition, since the precharge for all banks is automatically performed after auto-refresh, no precharge command is required after auto-refresh. Data Sheet E0082H10 13 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Self-refresh entry [SELF]: When this command is input during the IDLE state, the SDRAM starts selfrefresh operation. After the execution of this command, self-refresh continues while CKE is Low. Since selfrefresh is performed internally and automatically, external refresh operations are unnecessary. Power down mode entry: When this command is executed during the IDLE state, the SDRAM enters power down mode. In power down mode, power consumption is suppressed by cutting off the initial input circuit. Self-refresh exit: When this command is executed during self-refresh mode, the SDRAM can exit from selfrefresh mode. After exiting from self-refresh mode, the SDRAM enters the IDLE state. Power down exit: When this command is executed at the power down mode, the SDRAM can exit from power down mode. After exiting from power down mode, the SDRAM enters the IDLE state. Function Truth Table The following table shows the operations that are performed when each command is issued in each mode of the SDRAM. The following table assumes that CKE is high. Current state CS RAS CAS WE Address Command Operation Precharge H × × × × DESL Enter IDLE after t RP L H H H × NOP Enter IDLE after t RP L H L H BA, CA, A10 READ/READ A ILLEGAL*4 L H L L BA, CA, A10 WRIT/WRIT A ILLEGAL*4 L L H H BA, RA ACTV ILLEGAL*4 L L H L BA, A10 PRE, PALL NOP*6 L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL H × × × × DESL NOP L H H H × NOP NOP L H L H BA, CA, A10 READ/READ A ILLEGAL*5 L H L L BA, CA, A10 WRIT/WRIT A ILLEGAL*5 L L H H BA, RA ACTV Bank and row active L L H L BA, A10 PRE, PALL NOP L L L H × REF, SELF Refresh L L L L MODE MRS Mode register set Idle Data Sheet E0082H10 14 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Current state CS RAS CAS WE Address Command Operation Row active H × × × × DESL NOP L H H H × NOP NOP L H L H BA, CA, A10 READ/READ A Begin read L H L L BA, CA, A10 WRIT/WRIT A Begin write L L H H BA, RA ACTV Other bank active ILLEGAL on same bank*3 L L H L BA, A10 PRE, PALL Precharge L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL H × × × × DESL Continue burst to end L H H H × NOP Continue burst to end L H L H BA, CA, A10 READ/READ A Continue burst read to CAS latency and New read L H L L BA, CA, A10 WRIT/WRIT A Term burst read/start write L L H H BA, RA ACTV Other bank active ILLEGAL on same bank*3 L L H L BA, A10 PRE, PALL Term burst read and Precharge L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL H × × × × DESL Continue burst to end and precharge L H H H × NOP Continue burst to end and precharge L H L H BA, CA, A10 READ/READ A ILLEGAL*4 L H L L BA, CA, A10 WRIT/WRIT A ILLEGAL*4 L L H H BA, RA ACTV Other bank active ILLEGAL on same bank*3 L L H L BA, A10 PRE, PALL ILLEGAL*4 L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL Read Read with autoprecharge Data Sheet E0082H10 15 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Current state CS RAS CAS WE Address Command Operation Write H × × × × DESL Continue burst to end L H H H × NOP Continue burst to end L H L H BA, CA, A10 READ/READ A Term burst and New read L H L L BA, CA, A10 WRIT/WRIT A Term burst and New write L L H H BA, RA ACTV Other bank active ILLEGAL on same bank*3 L L H L BA, A10 PRE, PALL Term burst write and Precharge*2 L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL H × × × × DESL Continue burst to end and precharge L H H H × NOP Continue burst to end and precharge L H L H BA, CA, A10 READ/READ A ILLEGAL*4 L H L L BA, CA, A10 WRIT/WRIT A ILLEGAL*4 L L H H BA, RA ACTV Other bank active ILLEGAL on same bank*3 L L H L BA, A10 PRE, PALL ILLEGAL*4 L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL H × × × × DESL Enter IDLE after t RC L H H H × NOP Enter IDLE after t RC L H L H BA, CA, A10 READ/READ A ILLEGAL*5 L H L L BA, CA, A10 WRIT/WRIT A ILLEGAL*5 L L H H BA, RA ACTV ILLEGAL*5 L L H L BA, A10 PRE, PALL ILLEGAL*5 L L L H × REF, SELF ILLEGAL L L L L MODE MRS ILLEGAL Write with autoprecharge Refresh (autorefresh) Notes: 1. 2. 3. 4. 5. 6. H: VIH. L: V IL. ×: VIH or VIL. The other combinations are inhibit. An interval of t DPL is required between the final valid data input and the precharge command. If tRRD is not satisfied, this operation is illegal. Illegal for same bank, except for another bank. Illegal for all banks. NOP for same bank, except for another bank. Data Sheet E0082H10 16 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 From PRECHARGE state, command operation To [DESL], [NOP]: When these commands are executed, the SDRAM enters the IDLE state after tRP has elapsed from the completion of precharge. From IDLE state, command operation To [DESL], [NOP], [PRE] or [PALL]: These commands result in no operation. To [ACTV]: The bank specified by the address pins and the ROW address is activated. To [REF], [SELF]: The SDRAM enters refresh mode (auto-refresh or self-refresh). To [MRS]: The synchronous DRAM enters the mode register set cycle. From ROW ACTIVE state, command operation To [DESL], [NOP]: These commands result in no operation. To [READ], [READ A]: A read operation starts. (However, an interval of tRCD is required.) To [WRIT], [WRIT A]: A write operation starts. (However, an interval of tRCD is required.) To [ACTV]: This command makes the other bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command. To [PRE], [PALL]: These commands set the SDRAM to precharge mode. (However, an interval of tRAS is required.) From READ state, command operation To [DESL], [NOP]: These commands continue read operations until the burst operation is completed. To [READ], [READ A]: Data output by the previous read command continues to be output. After CAS latency, the data output resulting from the next command will start. To [WRIT], [WRIT A]: These commands stop a burst read, and start a write cycle. To [ACTV]: This command makes other banks bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command. To [PRE], [PALL]: These commands stop a burst read, and the SDRAM enters precharge mode. From READ with AUTO-PRECHARGE state, command operation Data Sheet E0082H10 17 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 To [DESL], [NOP]: These commands continue read operations until the burst operation is completed, and the SDRAM then enters precharge mode. To [ACTV]: This command makes other banks bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command. From WRITE state, command operation To [DESL], [NOP]: These commands continue write operations until the burst operation is completed. To [READ], [READ A]: These commands stop a burst and start a read cycle. To [WRIT], [WRIT A]: These commands stop a burst and start the next write cycle. To [ACTV]: This command makes the other bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command. To [PRE], [PALL]: These commands stop burst write and the SDRAM then enters precharge mode. From WRITE with AUTO-PRECHARGE state, command operation To [DESL], [NOP]: These commands continue write operations until the burst is completed, and the synchronous DRAM enters precharge mode. To [ACTV]: This command makes the other bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command. From REFRESH state, command operation To [DESL], [NOP]: After an auto-refresh cycle (after tRC), the SDRAM automatically enters the IDLE state. Data Sheet E0082H10 18 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Simplified State Diagram SELF REFRESH SR ENTRY SR EXIT MRS MODE REGISTER SET REFRESH IDLE *1 AUTO REFRESH CKE CKE_ IDLE POWER DOWN ACTIVE ACTIVE CLOCK SUSPEND CKE_ CKE ROW ACTIVE WRITE Write WRITE SUSPEND CKE_ WRITE READ WRITE WITH AP READ WRITE CKE READ WITH AP WRITE WITH AP WRITEA READ CKE CKE CKE_ CKE POWER ON READ SUSPEND READ WITH AP READA PRECHARGE POWER APPLIED WRITE WITH AP Read CKE_ PRECHARGE CKE_ WRITEA SUSPEND READ WITH AP READA SUSPEND PRECHARGE PRECHARGE PRECHARGE Automatic transition after completion of command. Transition resulting from command input. Note: 1. After the auto-refresh operation, precharge operation is performed automatically and enter the IDLE state. Data Sheet E0082H10 19 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Mode Register Configuration The mode register is set by the input to the address pins (A0 to A12, BA0 and BA1) during mode register set cycles. The mode register consists of five sections, each of which is assigned to address pins. BA1, BA0, A11, A10, A12, A9, A8: (OPCODE): The SDRAM has two types of write modes. One is the burst write mode, and the other is the single write mode. These bits specify write mode. Burst read and burst write: Burst write is performed for the specified burst length starting from the column address specified in the write cycle. Burst read and single write: Data is only written to the column address specified during the write cycle, regardless of the burst length. A7: Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set. A6, A5, A4: (LMODE): These pins specify the CAS latency. A3: (BT): A burst type is specified. A2, A1, A0: (BL): These pins specify the burst length. BA1 BA0 A12 A11 A10 A9 A8 OPCODE A7 A6 0 A5 LMODE A6 A5 A4 CAS latency A3 Burst type A2 A1 A0 0 Sequential 0 0 1 R 1 0 0 Interleave Burst length BT=0 BT=1 0 1 1 0 1 0 2 0 0 1 2 2 0 1 1 3 0 1 0 4 4 1 X X R 0 1 1 8 8 1 0 0 R R 1 0 1 R R 1 1 0 R R 1 1 1 R R 0 0 X X X X X 0 1 X X X X X 1 0 X X X X X 1 1 Write mode Burst read and burst write R Burst read and single write R Data Sheet E0082H10 20 A0 BL R 0 0 BT A1 0 A8 0 A2 0 A9 0 A3 0 BA1 BA0 A12 A11 A10 0 A4 R is Reserved (inhibit) X: 0 or 1 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Burst Sequence Burst length = 2 Burst length = 4 Starting Ad. Addressing(decimal) A0 Sequential Interleave Starting Ad. Addressing(decimal) A1 A0 Sequential Interleave 0 0, 1, 0, 1, 0 0 0, 1, 2, 3, 0, 1, 2, 3, 1 1, 0, 1, 0, 0 1 1, 2, 3, 0, 1, 0, 3, 2, 1 0 2, 3, 0, 1, 2, 3, 0, 1, 1 1 3, 0, 1, 2, 3, 2, 1, 0, Burst length = 8 Addressing(decimal) Starting Ad. A2 A1 A0 Sequential Interleave 0 0 0 0, 1, 2, 3, 4, 5, 6, 7, 0, 1, 2, 3, 4, 5, 6, 7, 0 0 1 1, 2, 3, 4, 5, 6, 7, 0, 1, 0, 3, 2, 5, 4, 7, 6, 0 1 0 2, 3, 4, 5, 6, 7, 0, 1, 2, 3, 0, 1, 6, 7, 4, 5, 0 1 1 3, 4, 5, 6, 7, 0, 1, 2, 3, 2, 1, 0, 7, 6, 5, 4, 1 0 0 4, 5, 6, 7, 0, 1, 2, 3, 4, 5, 6, 7, 0, 1, 2, 3, 1 0 1 5, 6, 7, 0, 1, 2, 3, 4, 5, 4, 7, 6, 1, 0, 3, 2, 1 1 0 6, 7, 0, 1, 2, 3, 4, 5, 6, 7, 4, 5, 2, 3, 0, 1, 1 1 1 7, 0, 1, 2, 3, 4, 5, 6, 7, 6, 5, 4, 3, 2, 1, 0, Data Sheet E0082H10 21 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Operation of the SDRAM The following chapter shows operation example of the products below. Organization Input/output mask CAS latency 4-Mword × 16-bit × 4 bank DQMU/DQML 2/3 8-Mword × 8-bit × 4 bank DQM 16-Mword × 4-bit × 4 bank DQM Note: The SDRAM should be used according to the product capability (See “Features”, “Pin Description” and “AC Characteristics”). Read/Write Operations Bank active: Before executing a read or write operation, the corresponding bank and the row address must be activated by the bank active (ACTV) command. An interval of tRCD is required between the bank active command input and the following read/write command input. Read operation: A read operation starts when a read command is input. Output buffer becomes Low-Z in the (CAS Latency - 1) cycle after read command set. The SDRAM can perform a burst read operation. The burst length can be set to 1, 2, 4, 8. The start address for a burst read is specified by the column address and the bank select address (BA0/BA1) at the read command set cycle. In a read operation, data output starts after the number of clocks specified by the CAS Latency. The CAS Latency can be set to 2 or 3. When the burst length is 1, 2, 4, 8, the Dout buffer automatically becomes High-Z at the next clock after the successive burst-length data has been output. The CAS latency and burst length must be specified at the mode register. Data Sheet E0082H10 22 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 CAS Latency CLK t RCD Command ACTV Row Address Dout READ Column out 0 CL = 2 CL = 3 out 1 out 2 out 3 out 0 out 1 out 2 out 3 CL = CAS latency Burst Length = 4 Burst Length CLK t RCD Command ACTV READ Address Row Column BL = 1 out 0 out 0 out 1 Dout BL = 2 out 0 out 1 out 2 out 3 BL = 4 out 0 out 1 out 2 out 3 out 4 out 5 out 6 out 7 BL = 8 BL : Burst Length CAS Latency = 2 Data Sheet E0082H10 23 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Write operation: Burst write or single write mode is selected by the OPCODE (BA1, BA0, A12, A11, A10, A9, A8) of the mode register. 1. Burst write: A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write starts in the same clock as a write command set. (The latency of data input is 0 clock.) The burst length can be set to 1, 2, 4 and 8, like burst read operations. The write start address is specified by the column address and the bank select address (BA0/BA1) at the write command set cycle. CLK t RCD Command ACTV WRIT Address Row Column in 0 BL = 1 Din in 0 in 1 in 0 in 1 in 2 in 3 in 0 in 1 in 2 in 3 BL = 2 BL = 4 in 4 in 5 in 6 in 7 BL = 8 CAS Latency = 2, 3 2. Single write: A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single write operation, data is only written to the column address and the bank select address (BA0/BA1) specified by the write command set cycle without regard to the burst length setting. (The latency of data input is 0 clock). CLK t RCD Command Address Din ACTV Row WRIT Column in 0 Data Sheet E0082H10 24 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Auto Precharge Read with auto-precharge: In this operation, since precharge is automatically performed after completing a read operation, a precharge command need not be executed after each read operation. The command executed for the same bank after the execution of this command must be the bank active (ACTV) command. In addition, an interval defined by l APR is required before execution of the next command. CAS latency Precharge start cycle 3 2 cycle before the final data is output 2 1 cycle before the final data is output Burst Read (Burst Length = 4) CLK CL=2 Command ACTV READ A ACTV lRAS DQ (input) out0 out1 out2 out3 lAPR CL=3 Command ACTV READ A ACTV lRAS DQ (input) out0 out1 out2 out3 lAPR Note: Internal auto-precharge starts at the timing indicated by " ". And an interval of tRAS (lRAS) is required between previous active (ACTV) command and internal precharge " ". Data Sheet E0082H10 25 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Write with auto-precharge: In this operation, since precharge is automatically performed after completing a burst write or single write operation, a precharge command need not be executed after each write operation. The command executed for the same bank after the execution of this command must be the bank active (ACTV) command. In addition, an interval of lAPW is required between the final valid data input and input of next command. Burst Write (Burst Length = 4) CLK Command ACTV ACTV WRIT A IRAS DQ (input) in0 in1 in2 in3 lAPW Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACTV) command and internal precharge " ". Single Write CLK Command ACTV ACTV WRIT A IRAS DQ (input) in lAPW Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACTV) command and internal precharge " ". Data Sheet E0082H10 26 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Command Intervals Read command to Read command interval: 1. Same bank, same ROW address: When another read command is executed at the same ROW address of the same bank as the preceding read command execution, the second read can be performed after an interval of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid. READ to READ Command Interval (same ROW address in same bank) CLK Command Address ACTV Row READ READ Column A Column B BS Dout out A0 out B0 out B1 out B2 out B3 Bank0 Active Column =A Column =B Column =A Column =B Dout Read Read Dout CAS Latency = 3 Burst Length = 4 Bank 0 2. Same bank, different ROW address: When the ROW address changes on same bank, consecutive read commands cannot be executed; it is necessary to separate the two read commands with a precharge command and a bank-active command. 3. Different bank: When the bank changes, the second read can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank-active state. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid. READ to READ Command Interval (different bank) CLK Command ACTV ACTV READ READ Address Row 0 Row 1 Column A Column B BS Dout out A0 out B0 out B1 out B2 out B3 Bank0 Active Bank3 Bank0 Bank3 Active Read Read Bank0 Bank3 Dout Dout CAS Latency = 3 Burst Length = 4 Data Sheet E0082H10 27 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Write command to Write command interval: 1. Same bank, same ROW address: When another write command is executed at the same ROW address of the same bank as the preceding write command, the second write can be performed after an interval of no less than 1 clock. In the case of burst writes, the second write command has priority. WRITE to WRITE Command Interval (same ROW address in same bank) CLK Command Address ACTV Row WRIT WRIT Column A Column B BS Din in A0 Bank0 Active in B0 in B1 in B2 in B3 Burst Write Mode Burst Length = 4 Bank 0 Column =A Column =B Write Write 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two write commands with a precharge command and a bank-active command. 3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank-active state. In the case of burst write, the second write command has priority. WRITE to WRITE Command Interval (different bank) CLK Command ACTV Address Row 0 ACTV WRIT Row 1 WRIT Column A Column B BS Din in A0 Bank0 Active in B0 in B1 in B2 in B3 Bank3 Bank0 Bank3 Active Write Write Data Sheet E0082H10 28 Burst Write Mode Burst Length = 4 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Read command to Write command interval: 1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the preceding read command, the write command can be performed after an interval of no less than 1 clock. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before data input. READ to WRITE Command Interval (1) CLK Command READ WRIT DQM, CL=2 DQMU /DQML CL=3 in B0 Din in B1 in B2 in B3 Burst Length = 4 Burst write High-Z Dout READ to WRITE Command Interval (2) CLK Command READ DQM, DQMU/DQML WRIT 2 clock High-Z CL=2 Dout High-Z CL=3 Din 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bankactive command. 3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided that the other bank is in the bank-active state. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before data input. Data Sheet E0082H10 29 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Write command to Read command interval: 1. Same bank, same ROW address: When the read command is executed at the same ROW address of the same bank as the preceding write command, the read command can be performed after an interval of no less than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed. WRITE to READ Command Interval (1) CLK Command WRIT READ DQM, DQMU/DQML Din in A0 Dout out B1 out B0 Column = A Write Column = B Read out B2 out B3 Burst Write Mode CAS Latency = 2 Burst Length = 4 Bank 0 CAS Latency Column = B Dout WRITE to READ Command Interval (2) CLK Command WRIT READ DQM, DQMU/DQML Din in A0 in A1 Dout out B0 Column = A Write out B1 CAS Latency Column = B Read Column = B Dout out B2 out B3 Burst Write Mode CAS Latency = 2 Burst Length = 4 Bank 0 2. Same bank, different ROW address: When the ROW address changes, consecutive read commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bankactive command. 3. Different bank: When the bank changes, the read command can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank-active state. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed (as in the case of the same bank and the same address). Data Sheet E0082H10 30 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Read with auto precharge to Read command interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. Even when the first read with auto-precharge is a burst read that is not yet finished, the data read by the second command is valid. The internal auto-precharge of one bank starts at the next clock of the second command. Read with Auto Precharge to Read Command Interval (Different bank) CLK Command READ A READ BS Dout out A0 bank0 Read A out A1 out B0 bank3 Read out B1 CAS Latency = 3 Burst Length = 4 Note: Internal auto-precharge starts at the timing indicated by " ". 2. Same bank: The consecutive read command (the same bank) is illegal. Write with auto precharge to Write command interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. In the case of burst writes, the second write command has priority. The internal auto-precharge of one bank starts at the next clock of the second command . Write with Auto Precharge to Write Command Interval (Different bank) CLK Command WRIT A WRIT BS Din in A0 bank0 Write A in A1 in B0 in B1 in B2 bank3 Write Note: Internal auto-precharge starts at the timing indicated by " in B3 Burst Length = 4 ". 2. Same bank: The consecutive write command (the same bank) is illegal. Data Sheet E0082H10 31 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Read with auto precharge to Write command interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before data input. The internal auto-precharge of one bank starts at the next clock of the second command. Read with Auto Precharge to Write Command Interval (Different bank) CLK Command READ A WRIT BS DQM, DQMU/DQML CL = 2 CL = 3 Din in B0 Dout in B1 in B2 in B3 High-Z bank0 Read A Burst Length = 4 bank3 Write Note: Internal auto-precharge starts at the timing indicated by " ". 2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command. Data Sheet E0082H10 32 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Write with auto precharge to Read command interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. However, in case of a burst write, data will continue to be written until one clock before the read command is executed. The internal auto-precharge of one bank starts at the next clock of the second command. Write with Auto Precharge to Read Command Interval (Different bank) CLK Command WRIT A READ BS DQM, DQMU/DQML Din in A0 Dout out B0 bank0 Write A out B1 out B3 CAS Latency = 3 Burst Length = 4 bank3 Read Note: Internal auto-precharge starts at the timing indicated by " out B2 ". 2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command. Data Sheet E0082H10 33 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Read command to Precharge command interval (same bank): When the precharge command is executed for the same bank as the read command that preceded it, the minimum interval between the two commands is one clock. However, since the output buffer then becomes High-Z after the clocks defined by lHZP , there is a case of interruption to burst read data output will be interrupted, if the precharge command is input during burst read. To read all data by burst read, the clocks defined by lEP must be assured as an interval from the final data output to precharge command execution. READ to PRECHARGE Command Interval (same bank): To output all data CAS Latency = 2, Burst Length = 4 CLK Command READ PRE/PALL Dout out A0 out A1 CL=2 out A2 out A3 l EP = -1 cycle CAS Latency = 3, Burst Length = 4 CLK Command READ PRE/PALL Dout out A0 CL=3 Data Sheet E0082H10 34 out A1 out A2 l EP = -2 cycle out A3 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 READ to PRECHARGE Command Interval (same bank): To stop output data CAS Latency = 2, Burst Length = 1, 2, 4, 8 CLK Command READ PRE/PALL High-Z Dout out A0 l HZP =2 CAS Latency = 3, Burst Length = 1, 2, 4, 8 CLK Command READ PRE/PALL High-Z Dout out A0 l HZP =3 Data Sheet E0082H10 35 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Write command to Precharge command interval (same bank): When the precharge command is executed for the same bank as the write command that preceded it, the minimum interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data must be masked by means of DQM, DQMU/DQML for assurance of the clock defined by t DPL. WRITE to PRECHARGE Command Interval (same bank) Burst Length = 4 (To stop write operation) CLK Command WRIT PRE/PALL DQM, DQMU/DQML Din tDPL CLK Command PRE/PALL WRIT DQM, DQMU/DQML Din in A0 in A1 tDPL Burst Length = 4 (To write all data) CLK Command PRE/PALL WRIT DQM, DQMU/DQML Din in A0 in A1 in A2 in A3 tDPL Data Sheet E0082H10 36 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Bank active command interval: 1. Same bank: The interval between the two bank-active commands must be no less than tRC. 2. In the case of different bank-active commands: The interval between the two bank-active commands must be no less than tRRD. Bank Active to Bank Active for Same Bank CLK Command ACTV ACTV Address ROW ROW BS t RC Bank 0 Active Bank 0 Active Bank Active to Bank Active for Different Bank CLK Command Address ACTV ACTV ROW:0 ROW:1 BS t RRD Bank 0 Active Bank 3 Active Data Sheet E0082H10 37 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Mode register set to Bank-active command interval: The interval between setting the mode register and executing a bank-active command must be no less than lRSA . CLK Command Address MRS ACTV CODE BS & ROW I RSA Mode Register Set Bank Active Data Sheet E0082H10 38 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 DQM Control The DQM mask the DQ data. The DQMU and DQML mask the upper and lower bytes of the DQ data, respectively. The timing of DQMU/DQML is different during reading and writing. Reading: When data is read, the output buffer can be controlled by DQM, DQMU/DQML. By setting DQM, DQMU/DQML to Low, the output buffer becomes Low-Z, enabling data output. By setting DQM, DQMU/DQML to High, the output buffer becomes High-Z, and the corresponding data is not output. However, internal reading operations continue. The latency of DQM, DQMU/DQML during reading is 2 clocks. Writing: Input data can be masked by DQM, DQMU/DQML. By setting DQM, DQMU/DQML to Low, data can be written. In addition, when DQM, DQMU/DQML is set to High, the corresponding data is not written, and the previous data is held. The latency of DQM, DQMU/DQML during writing is 0 clock. Reading CLK DQM, DQMU/DQML DQ (output) High-Z out 0 out 1 out 3 lDOD = 2 Latency Writing ; ;; CLK DQM, DQMU/DQML DQ (input) in 0 in 3 in 1 l DID = 0 Latency Data Sheet E0082H10 39 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Refresh Auto-refresh: All the banks must be precharged before executing an auto-refresh command. Since the autorefresh command updates the internal counter every time it is executed and determines the banks and the ROW addresses to be refreshed, external address specification is not required. The refresh cycle is 8192 cycles/64 ms. (8192 cycles are required to refresh all the ROW addresses.) The output buffer becomes HighZ after auto-refresh start. In addition, since a precharge has been completed by an internal operation after the auto-refresh, an additional precharge operation by the precharge command is not required. Self-refresh: After executing a self-refresh command, the self-refresh operation continues while CKE is held Low. During self-refresh operation, all ROW addresses are refreshed by the internal refresh timer. A selfrefresh is terminated by a self-refresh exit command. Before and after self-refresh mode, execute auto-refresh to all refresh addresses in or within 64 ms period on the condition (1) and (2) below. (1) Enter self-refresh mode within 7.8 µs after either burst refresh or distributed refresh at equal interval to all refresh addresses are completed. (2) Start burst refresh or distributed refresh at equal interval to all refresh addresses within 7.8 µs after exiting from self-refresh mode. Others Power-down mode: The SDRAM enters power-down mode when CKE goes Low in the IDLE state. In power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode continues while CKE is held Low. In addition, by setting CKE to High, the SDRAM exits from the power down mode, and command input is enabled from the next clock. In this mode, internal refresh is not performed. Clock suspend mode: By driving CKE to Low during a bank-active or read/write operation, the SDRAM enters clock suspend mode. During clock suspend mode, external input signals are ignored and the internal state is maintained. When CKE is driven High, the SDRAM terminates clock suspend mode, and command input is enabled from the next clock. For details, refer to the "CKE Truth Table". Power-up sequence: The SDRAM should be goes on the following sequence with power up. The CLK, CKE, CS, DQM, DQMU/DQML and DQ pins keep low till power stabilizes. The CLK pin is stabilized within 100 µs after power stabilizes before the following initialization sequence. The CKE and DQM, DQMU/DQML is driven to high between power stabilizes and the initialization sequence. This SDRAM has VCC clamp diodes for CLK, CKE, CS DQM, DQMU/DQML and DQ pins. If these pins go high before power up, the large current flows from these pins to VCC through the diodes. Initialization sequence: When 200 µs or more has past after the above power-up sequence, all banks must be precharged using the precharge command (PALL). After t RP delay, set 8 or more auto refresh commands (REF). Set the mode register set command (MRS) to initialize the mode register. We recommend that by keeping DQM, DQMU/DQML and CKE to High, the output buffer becomes High-Z during Initialization sequence, to avoid DQ bus contention on memory system formed with a number of device. Data Sheet E0082H10 40 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Initialization sequence Power up sequence 100 µs VCC, VCCQ 200 µs 0V CKE, DQM, DQMU/DQML Low CLK Low CS, DQ Low Power stabilize Absolute Maximum Ratings Parameter Symbol Value Unit Note Voltage on any pin relative to V SS VT –0.5 to VCC + 0.5 (≤ 4.6 (max)) V 1 Supply voltage relative to VSS VCC –0.5 to +4.6 V 1 Short circuit output current Iout 50 mA Power dissipation PT 1.0 W Operating temperature Topr 0 to +70 °C Storage temperature Tstg –55 to +125 °C Note: 1. Respect to VSS. DC Operating Conditions (Ta = 0 to +70˚C) Parameter Symbol Min Max Unit Notes Supply voltage VCC, VCCQ 3.0 3.6 V 1, 2 VSS , VSS Q 0 0 V 3 Input high voltage VIH 2.0 VCC + 0.3 V 1, 4 Input low voltage VIL –0.3 0.8 V 1, 5 Notes: 1. 2. 3. 4. 5. All voltage referred to VSS . The supply voltage with all VCC and V CCQ pins must be on the same level. The supply voltage with all VSS and VSS Q pins must be on the same level. VIH (max) = VCC + 2.0 V for pulse width ≤ 3 ns at VCC. VIL (min) = VSS – 2.0 V for pulse width ≤ 3 ns at VSS . Data Sheet E0082H10 41 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 VIL/VIH Clamp This SDRAM has VIL and V IH clamp for CLK, CKE, CS, DQM and DQ pins. Minimum VIL Clamp Current VIL (V) I (mA) –2 –32 –1.8 –25 –1.6 –19 –1.4 –13 –1.2 –8 –1 –4 –0.9 –2 –0.8 –0.6 –0.6 0 –0.4 0 –0.2 0 0 0 0 –2 –5 –1.5 –1 I (mA) –10 –15 –20 –25 –30 –35 VIL (V) Data Sheet E0082H10 42 –0.5 0 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Minimum VIH Clamp Current VIH (V) I (mA) VCC + 2 10 VCC + 1.8 8 VCC + 1.6 5.5 VCC + 1.4 3.5 VCC + 1.2 1.5 VCC + 1 0.3 VCC + 0.8 0 VCC + 0.6 0 VCC + 0.4 0 VCC + 0.2 0 VCC + 0 0 10 I (mA) 8 6 4 2 0 VCC + 0 VCC + 0.5 VCC + 1 VCC + 1.5 VCC + 2 VIH (V) Data Sheet E0082H10 43 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 IOL/IOH Characteristics Output Low Current (IOL) I OL I OL Vout (V) Min (mA) Max (mA) 0 0 0 0.4 27 71 0.65 41 108 0.85 51 134 1 58 151 1.4 70 188 1.5 72 194 1.65 75 203 1.8 77 209 1.95 77 212 3 80 220 3.45 81 223 250 IOL (mA) 200 150 min max 100 50 0 0 0.5 1 1.5 2 Vout (V) Data Sheet E0082H10 44 2.5 3 3.5 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Output High Current (I OH ) (Ta = 0 to +70˚C, VCC, VCCQ = 3.0 V to 3.45 V, VSS, VSSQ = 0 V) I OH I OH Vout (V) Min (mA) Max (mA) 3.45 — –3 3.3 — –28 3 0 –75 2.6 –21 –130 2.4 –34 –154 2 –59 –197 1.8 –67 –227 1.65 –73 –248 1.5 –78 –270 1.4 –81 –285 1 –89 –345 0 –93 –503 0 0 0.5 1 1.5 2 2.5 3 3.5 IOH (mA) –100 –200 min max –300 –400 –500 –600 Vout (V) Data Sheet E0082H10 45 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 DC Characteristics (Ta = 0 to +70˚C, VCC, VCC Q = 3.3 V ± 0.3 V, VS S, V SSQ = 0 V) (HM5225165B) HM5225165B -75 -A6 -B6 Parameter Symbol Min Max Min Max Min Max Unit Test conditions Notes Operating current (CAS latency = 2) — 115 — 100 — 80 mA Burst length = 1 t RC = min 1, 2, 3 I CC1 (CAS latency = 3) I CC1 — 115 — 100 — 100 mA Standby current in power down I CC2P — 3 — 3 — 3 mA CKE = VIL, t CK = 12 ns 6 Standby current in power down (input signal stable) I CC2PS — 2 — 2 — 2 mA CKE = VIL, t CK = ∞ 7 Standby current in non power down I CC2N — 20 — 20 — 20 mA CKE, CS = VIH, t CK = 12 ns 4 Standby current in non power down (input signal stable) I CC2NS — 9 — 9 — 9 mA CKE = VIH, t CK = ∞ 9 Active standby current in power down I CC3P — 4 — 4 — 4 mA CKE = VIL, t CK = 12 ns 1, 2, 6 Active standby current in power down (input signal stable) I CC3PS — 3 — 3 — 3 mA CKE = VIL, t CK = ∞ 2, 7 Active standby current in non power down I CC3N — 30 — 30 — 30 mA CKE, CS = VIH, t CK = 12 ns 1, 2, 4 Active standby current in non power down (input signal stable) I CC3NS — 15 — 15 — 15 mA CKE = VIH, t CK = ∞ 2, 9 I CC4 — 110 — 110 — 85 mA t CK = min, BL = 4 1, 2, 5 I CC4 — 145 — 110 — 110 mA Refresh current I CC5 — 220 — 220 — 220 mA t RC = min 3 Self refresh current I CC6 — 3 — 3 — 3 mA VIH ≥ VCC – 0.2 V VIL ≤ 0.2 V 8 Self refresh current (L-version) I CC6 — 2 — 2 — 2 mA Input leakage current I LI –1 1 –1 1 –1 1 µA 0 ≤ Vin ≤ VCC Output leakage current I LO –1.5 1.5 –1.5 1.5 –1.5 1.5 µA 0 ≤ Vout ≤ VCC DQ = disable Output high voltage VOH 2.4 — 2.4 — 2.4 — V I OH = –4 mA Output low voltage VOL — 0.4 — 0.4 — 0.4 V I OL = 4 mA Burst operating current (CAS latency = 2) (CAS latency = 3) Data Sheet E0082H10 46 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 DC Characteristics (Ta = 0 to +70˚C, VCC, VCC Q = 3.3 V ± 0.3 V, VS S, V SSQ = 0 V) (HM5225805B) HM5225805B -75 -A6 -B6 Parameter Symbol Min Max Min Max Min Max Unit Test conditions Notes Operating current (CAS latency = 2) — 110 — 95 — 75 mA Burst length = 1 t RC = min 1, 2, 3 I CC1 (CAS latency = 3) I CC1 — 110 — 95 — 95 mA Standby current in power down I CC2P — 3 — 3 — 3 mA CKE = VIL, t CK = 12 ns 6 Standby current in power down (input signal stable) I CC2PS — 2 — 2 — 2 mA CKE = VIL, t CK = ∞ 7 Standby current in non power down I CC2N — 20 — 20 — 20 mA CKE, CS = VIH, t CK = 12 ns 4 Standby current in non power down (input signal stable) I CC2NS — 9 — 9 — 9 mA CKE = VIH, t CK = ∞ 9 Active standby current in power down I CC3P — 4 — 4 — 4 mA CKE = VIL, t CK = 12 ns 1, 2, 6 Active standby current in power down (input signal stable) I CC3PS — 3 — 3 — 3 mA CKE = VIL, t CK = ∞ 2, 7 Active standby current in non power down I CC3N — 30 — 30 — 30 mA CKE, CS = VIH, t CK = 12 ns 1, 2, 4 Active standby current in non power down (input signal stable) I CC3NS — 15 — 15 — 15 mA CKE = VIH, t CK = ∞ 2, 9 I CC4 — 100 — 100 — 75 mA t CK = min, BL = 4 1, 2, 5 Burst operating current (CAS latency = 2) I CC4 — 135 — 100 — 100 mA Refresh current (CAS latency = 3) I CC5 — 220 — 220 — 220 mA t RC = min 3 Self refresh current I CC6 — 3 — 3 — 3 mA VIH ≥ VCC – 0.2 V VIL ≤ 0.2 V 8 Self refresh current (L-version) I CC6 — 2 — 2 — 2 mA Input leakage current I LI –1 1 –1 1 –1 1 µA 0 ≤ Vin ≤ VCC Output leakage current I LO –1.5 1.5 –1.5 1.5 –1.5 1.5 µA 0 ≤ Vout ≤ VCC DQ = disable Output high voltage VOH 2.4 — 2.4 — 2.4 — V I OH = –4 mA Output low voltage VOL — 0.4 — 0.4 — 0.4 V I OL = 4 mA Data Sheet E0082H10 47 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 DC Characteristics (Ta = 0 to +70˚C, VCC, VCC Q = 3.3 V ± 0.3 V, VS S, V SSQ = 0 V) (HM5225405B) HM5225405B -75 -A6 -B6 Parameter Symbol Min Max Min Max Min Max Unit Test conditions Notes Operating current (CAS latency = 2) — 110 — 95 — 75 mA Burst length = 1 t RC = min 1, 2, 3 I CC1 (CAS latency = 3) I CC1 — 110 — 95 — 95 mA Standby current in power down I CC2P — 3 — 3 — 3 mA CKE = VIL, t CK = 12 ns 6 Standby current in power down (input signal stable) I CC2PS — 2 — 2 — 2 mA CKE = VIL, t CK = ∞ 7 Standby current in non power down I CC2N — 20 — 20 — 20 mA CKE, CS = VIH, t CK = 12 ns 4 Standby current in non power down (input signal stable) I CC2NS — 9 — 9 — 9 mA CKE = VIH, t CK = ∞ 9 Active standby current in power down I CC3P — 4 — 4 — 4 mA CKE = VIL, t CK = 12 ns 1, 2, 6 Active standby current in power down (input signal stable) I CC3PS — 3 — 3 — 3 mA CKE = VIL, t CK = ∞ 2, 7 Active standby current in non power down I CC3N — 30 — 30 — 30 mA CKE, CS = VIH, t CK = 12 ns 1, 2, 4 Active standby current in non power down (input signal stable) I CC3NS — 15 — 15 — 15 mA CKE = VIH, t CK = ∞ 2, 9 I CC4 — 95 — 95 — 70 mA t CK = min, BL = 4 1, 2, 5 — Burst operating current (CAS latency = 2) I CC4 — 130 — 95 95 mA Refresh current (CAS latency = 3) I CC5 — 220 — 220 — 220 mA t RC = min 3 Self refresh current I CC6 — 3 — 3 — 3 mA VIH ≥ VCC – 0.2 V VIL ≤ 0.2 V 8 Self refresh current (L-version) I CC6 — 2 — 2 — 2 mA Input leakage current I LI –1 1 –1 1 –1 1 µA 0 ≤ Vin ≤ VCC Output leakage current I LO –1.5 1.5 –1.5 1.5 –1.5 1.5 µA 0 ≤ Vout ≤ VCC DQ = disable Output high voltage VOH 2.4 — 2.4 — 2.4 — V I OH = –4 mA Output low voltage VOL — 0.4 — 0.4 — 0.4 V I OL = 4 mA Data Sheet E0082H10 48 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Notes: 1. I CC depends on output load condition when the device is selected. ICC (max) is specified at the output open condition. 2. One bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once per two clocks. 5. Input signals are changed once per four clocks. 6. After power down mode, CLK operating current. 7. After power down mode, no CLK operating current. 8. After self refresh mode set, self refresh current. 9. Input signals are V IH or VIL fixed. Capacitance (Ta = 25°C, VCC, VCCQ = 3.3 V ± 0.3 V) Parameter Symbol Min Max Unit Notes Input capacitance (CLK) CI1 2.5 3.5 pF 1, 2, 4 Input capacitance (Input) CI2 2.5 3.8 pF 1, 2, 4 Output capacitance (DQ) CO 4 6.5 pF 1, 2, 3, 4 Notes: 1. 2. 3. 4. Capacitance measured with Boonton Meter or effective capacitance measuring method. Measurement condition: f = 1 MHz, 1.4 V bias, 200 mV swing. DQM, DQMU/DQML = VIH to disable Dout. This parameter is sampled and not 100% tested. Data Sheet E0082H10 49 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 AC Characteristics (Ta = 0 to +70°C, VCC, VCCQ = 3.3 V ± 0.3 V, VSS, VSSQ = 0 V) HM5225165B/ HM5225805B/ HM5225405B -75 -A6 -B6 Parameter Symbol PC/100 Symbol Min Max Min Max Min Max Unit Notes System clock cycle time (CAS latency = 2) t CK Tclk 10 — 10 — 15 — ns 1 (CAS latency = 3) t CK Tclk 7.5 — 10 — 10 — ns CLK high pulse width t CKH Tch 2.5 — 3 — 3 — ns 1 CLK low pulse width t CKL Tcl 2.5 — 3 — 3 — ns 1 Access time from CLK (CAS latency = 2) t AC Tac — 6 — 6 — 8 ns 1, 2 (CAS latency = 3) t AC Tac — 5.4 — 6 — 6 ns Data-out hold time t OH Toh 2.7 — 3 — 3 — ns 1, 2 CLK to Data-out low impedance t LZ 2 — 2 — 2 — ns 1, 2, 3 CLK to Data-out high impedance (CAS latency = 2, 3) t HZ — 5.4 — 6 — 6 ns 1, 4 Input setup time t AS , t CS, t DS, Tsi t CES 1.5 — 2 — 2 — ns 1, 5, 6 CKE setup time for power down exit t CESP 1.5 — 2 — 2 — ns 1 Input hold time t AH, t CH, t DH, Thi t CEH 0.8 — 1 — 1 — ns 1, 6 Ref/Active to Ref/Active command period t RC Trc 67.5 — 70 — 70 — ns 1 Active to Precharge command period t RAS Tras 45 120000 50 120000 50 120000 ns 1 Active command to column command (same bank) t RCD Trcd 20 — 20 — 20 — ns 1 Precharge to active command period t RP Trp 20 — 20 — 20 — ns 1 Write recovery or data-in to precharge lead time t DPL Tdpl 15 — 20 — 20 — ns 1 Active (a) to Active (b) command period t RRD Trrd 15 — 20 — 20 — ns 1 Transition time (rise and fall) t T 1 5 1 5 1 5 ns Refresh period — 64 — 64 — 64 ms t REF Tpde Data Sheet E0082H10 50 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Notes: 1. 2. 3. 4. 5. 6. AC measurement assumes t T = 1 ns. Reference level for timing of input signals is 1.5 V. Access time is measured at 1.5 V. Load condition is CL = 50 pF. t LZ (min) defines the time at which the outputs achieves the low impedance state. t HZ (max) defines the time at which the outputs achieves the high impedance state. t CES define CKE setup time to CLK rising edge except power down exit command. t AS /tAH: Address, tCS/tCH: CS, RAS, CAS, WE, DQM, DQMU/DQML. t DS/tDH: Data-in, tCES/tCEH: CKE. Test Conditions • Input and output timing reference levels: 1.5 V • Input waveform and output load: See following figures 2.4 V input 0.4 V I/O 2.0 V 0.8 V CL t T tT Data Sheet E0082H10 51 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Relationship Between Frequency and Minimum Latency HM5225165B/ HM5225805B/ HM5225405B Parameter -75 -A6/B6 Frequency (MHz) 133 100 7.5 10 Notes PC/100 Symbol tCK (ns) Symbol Active command to column command (same bank) lRCD 3 2 1 Active command to active command (same bank) lRC 9 7 = [lRAS+ lRP] 1 Active command to precharge command (same bank) lRAS 6 5 1 Precharge command to active command (same bank) lRP 3 2 1 Write recovery or data-in to precharge command (same bank) lDPL 2 2 1 Active command to active command (different bank) lRRD 2 2 1 Self refresh exit time lSREX Tsrx 1 1 2 Last data in to active command (Auto precharge, same bank) lAPW Tdal 5 4 = [lDPL + lRP] Self refresh exit to command input lSEC 9 7 = [lRC] 3 Precharge command to high impedance (CAS latency = 2) lHZP Troh 2 2 lHZP Troh 3 3 lAPR 1 1 lEP –1 –1 lEP –2 –2 (CAS latency = 3) Last data out to active command (Auto precharge, same bank) Last data out to precharge (early precharge) (CAS latency = 2) (CAS latency = 3) Tdpl Column command to column command lCCD Tccd 1 1 Write command to data in latency lWCD Tdwd 0 0 DQM to data in lDID Tdqm 0 0 DQM to data out lDOD Tdqz 2 2 CKE to CLK disable lCLE Tcke 1 1 Register set to active command lRSA Tmrd 1 1 Data Sheet E0082H10 52 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 HM5225165B/ HM5225805B/ HM5225405B Parameter -75 -A6/B6 Frequency (MHz) 133 100 7.5 10 PC/100 Symbol tCK (ns) Symbol CS to command disable lCDD 0 0 Power down exit to command input lPEC 1 1 Notes Notes: 1. lRCD to l RRD are recommended value. 2. Be valid [DESL] or [NOP] at next command of self refresh exit. 3. Except [DESL] and [NOP] Data Sheet E0082H10 53 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 ;;; ;;;; Timing Waveforms Read Cycle t CK t CKH t CKL CLK t RC VIH CKE t RP ; ; ; ;;;;; ; ; ; ;;;;;; ; ; t RAS t RCD t CS t CH t CS t CH t CS t CH t CS t CH t CS t CH t CS t CH t CS t CH t CS t CH CS t CS t CH t CS t CH RAS t CS t CH t CS t CH CAS t CS t CH t CS t CH t AS t AH t AS t AH t AS t AH t AS t AH t AS t AH t CS t CH t CS t CH WE t AS t AH BS t AS t AH t AS t AH A10 t AS t AH t AS t AH t AS t AH Address t CH t CS DQM, DQMU/DQML DQ (input) t AC DQ (output) t AC t HZ t AC Bank 0 Active Bank 0 Read t LZ t OH Data Sheet E0082H10 54 t AC t OH t OH Bank 0 Precharge t OH CAS latency = 2 Burst length = 4 Bank 0 access = VIH or VIL ; ; ; ; ; ; ;;;; HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Write Cycle t CK t CKH t CKL CLK t RC VIH CKE t RAS t RCD t CS t CH t CS t CH t CS t CH t CS t CH t CS t CH t CS t CH t CS t CH ;;; ; ; t CS t CH t RP CS t CS t CH t CS t CH RAS t CS t CH t CS t CH CAS t CS t CH t CS t CH t CS t CH t AS t AH t AS t AH t AS t AH t AS t AH t CS t CH WE t AS t AH t AS t AH BS t AS t AH t AS t AH A10 t AS t AH t AS t AH t AS t AH Address t CS t CH DQM, DQMU/DQML t DS t DH tDS t DH t DS t DH t DS t DH DQ (input) t DPL DQ (output) Bank 0 Active Bank 0 Write Bank 0 Precharge CAS latency = 2 Burst length = 4 Bank 0 access = VIH or VIL Data Sheet E0082H10 55 ;;;;; ;;;;;;;;; ; ; ; ;;;;;;;;;;;;;;;;; ;; ; ;;;;;;;;; ;;;;; HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Mode Register Set Cycle 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 CLK VIH CKE CS RAS CAS WE BS code R: b valid C: b’ C: b ; Address DQM, DQMU/DQML DQ (output) b+3 b High-Z DQ (input) l RSA l RP Precharge If needed l RCD Mode Bank 3 register Active Set b’ b’+1 Output mask b’+2 b’+3 l RCD = 3 CAS latency = 3 Burst length = 4 = VIH or VIL Bank 3 Read Read Cycle/Write Cycle 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 CLK CKE VIH Read cycle RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL CS RAS CAS WE BS Address DQM, DQMU/DQML R:a C:a R:b DQ (output) DQ (input) CKE C:b a C:b' a+1 a+2 a+3 b C:b" b+1 b+2 b+3 b' b'+1 b" b"+1 b"+2 b"+3 High-Z Bank 0 Active Bank 0 Read Bank 3 Active Bank 3 Bank 0 Read Precharge Bank 3 Read Bank 3 Read Bank 3 Precharge VIH Write cycle RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL CS RAS CAS WE BS Address DQM, DQMU/DQML DQ (output) R:a C:a R:b C:b C:b' High-Z DQ (input) a Bank 0 Active Bank 0 Write a+1 a+2 a+3 Bank 3 Active b Bank 3 Write b+1 b+2 b+3 b' Bank 0 Precharge Data Sheet E0082H10 56 C:b" Bank 3 Write b'+1 b" Bank 3 Write b"+1 b"+2 b"+3 Bank 3 Precharge ;;;;;; ;;;; HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Read/Single Write Cycle 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 ; ;;;; ; ; ; ; 0 CLK CKE VIH CS RAS CAS WE BS R:a Address DQM, DQMU/DQML DQ (input) C:a R:b a DQ (output) a Bank 0 Active CKE C:a' C:a Bank 0 Read Bank 3 Active C:a R:b a+1 a+2 a+3 a Bank 0 Bank 0 Write Read a+1 a+2 a+3 Bank 0 Precharge Bank 3 Precharge VIH CS RAS CAS WE BS Address DQM, DQMU/DQML DQ (input) R:a DQ (output) a Bank 0 Active Bank 0 Read a+1 C:a C:b C:c a b c a+3 Bank 3 Active Bank 0 Write Bank 0 Bank 0 Write Write Bank 0 Precharge Read/Single write RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL Data Sheet E0082H10 57 ; ; ; ;;;;; HM5225165B/HM5225805B/HM5225405B-75/A6/B6 ; ; ;; ; Read/Burst Write Cycle 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 CLK CKE CS RAS CAS WE BS R:a Address DQM, DQMU/DQML DQ (input) C:a R:b a DQ (output) a Bank 0 Active CKE C:a' Bank 0 Read Bank 3 Active C:a R:b a+1 a+2 a+3 a+1 a+2 a+3 Clock suspend Bank 0 Write Bank 0 Precharge Bank 3 Precharge VIH CS RAS CAS WE BS Address DQM, DQMU/DQML DQ (input) R:a C:a a DQ (output) a Bank 0 Active Bank 0 Read a+1 a+1 a+2 a+3 a+3 Bank 3 Active Bank 0 Write Bank 0 Precharge Read/Burst write RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL Data Sheet E0082H10 58 ; ;;;;;;;; ;;;;; HM5225165B/HM5225805B/HM5225405B-75/A6/B6 ; ; ; ;;;;;;;; ;;;;;;;;; ; ; ; ; ; ; ; ; ; ;;;;;;;;;;;;;;;;;; ;;; ;; Auto Refresh Cycle 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 a a+1 CLK CKE VIH CS RAS CAS WE BS Address DQM, DQMU/DQML C:a R:a A10=1 DQ (input) High-Z DQ (output) t RC t RP Auto Refresh Precharge If needed tRC Active Bank 0 Auto Refresh Read Bank 0 Refresh cycle and Read cycle RAS-CAS delay = 2 CAS latency = 2 Burst length = 4 = VIH or VIL Self Refresh Cycle CLK l SREX CKE Low CKE CS RAS CAS WE BS Address A10=1 DQM, DQMU/DQML DQ (input) High-Z DQ (output) tRP Precharge command If needed tRC tRC Self refresh entry command Self refresh exit ignore command or No operation Next clock enable Self refresh entry command Auto Next clock refresh enable Self refresh cycle RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL Data Sheet E0082H10 59 ; ; ;;;;; ; ;;; HM5225165B/HM5225805B/HM5225405B-75/A6/B6 ; ;;;;;;;;;;;; ; ; ; ; ; ; ;;;;;; Clock Suspend Mode t CES 0 1 2 3 4 5 t CES t CEH 6 7 8 9 10 11 12 13 14 15 16 CLK CKE RAS CAS WE BS R:a C:a R:b a C:b a+1 a+2 a+3 b High-Z DQ (input) Bank0 Active clock Active suspend start Active clock Bank0 suspend end Read Bank3 Active Read suspend start Read suspend end Bank3 Read Bank0 Precharge CKE RAS CAS WE BS C:a R:b R:a C:b High-Z DQ (input) a Bank0 Active Active clock suspend start a+1 a+2 Active clock Bank0 Bank3 supend end Write Active Write suspend start a+3 b Write suspend end Data Sheet E0082H10 60 19 20 b+1 b+2 b+3 Earliest Bank3 Precharge Write cycle RAS-CAS delay = 2 CAS latency = 2 Burst length = 4 = VIH or VIL CS Address DQM, DQMU/DQML DQ (output) 18 Read cycle RAS-CAS delay = 2 CAS latency = 2 Burst length = 4 = VIH or VIL CS Address DQM, DQMU/DQML DQ (output) 17 b+1 b+2 b+3 Bank3 Bank0 Write Precharge Earliest Bank3 Precharge HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Power Down Mode ; ; ; ; ; ;;;;;; ; ; ;;;;;; ; ; ; ; ;;; ; ; ;;;;; ; CLK CKE Low CKE CS RAS CAS WE BS Address R: a A10=1 DQM, DQMU/DQML DQ (input) High-Z DQ (output) tRP Power down entry Precharge command If needed Power down mode exit Active Bank 0 Power down cycle RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL ;;; ;;;;;;;; ;;;;;;;; Initialization Sequence 0 1 2 3 4 5 6 7 8 9 10 48 49 50 51 52 53 54 55 CLK CKE VIH CS RAS CAS WE DQM, DQMU/DQML code valid Address Valid VIH High-Z DQ t RP All banks Precharge t RC Auto Refresh t RSA tRC Auto Refresh Mode register Set Bank active If needed Data Sheet E0082H10 61 HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Package Dimensions HM5225165BTT/BLTT HM5225805BTT/BLTT HM5225405BTT/BLTT Series (TTP-54D) Unit: mm 22.22 22.72 Max 28 10.16 54 1 27 0.80 *0.30 +0.10 –0.05 0.28 ± 0.05 0.13 M 0.80 11.76 ± 0.20 0.91 Max *Dimension including the plating thickness Base material dimension Data Sheet E0082H10 62 0.50 ± 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) TTP-54D — — 0.53 g 0.68 0.10 0.13 ± 0.05 *0.145 ± 0.05 0.125 ± 0.04 1.20 Max 0° – 5° HM5225165B/HM5225805B/HM5225405B-75/A6/B6 Cautions 1. Elpida Memory, Inc. neither warrants nor grants licenses of any rights of Elpida Memory, Inc.’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Elpida Memory, Inc. bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, contact Elpida Memory, Inc. before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Elpida Memory, Inc. particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. product does not cause bodily injury, fire or other consequential damage due to operation of the Elpida Memory, Inc. product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Elpida Memory, Inc.. 7. Contact Elpida Memory, Inc. for any questions regarding this document or Elpida Memory, Inc. semiconductor products. Data Sheet E0082H10 63