'9 9 n ew ! HMC132C8 MICROWAVE CORPORATION GaAS MMIC SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 Features General Description BANDWIDTH: DC-8 GHz The HMC132C8 is a surface mount, low HIGH ISOLATION : > 50 dB cost, non-hermetic packaged version of the HMC132G7 MMIC SPDT switch. The device NON-REFLECTIVE DESIGN is a fast, broadband SPDT switch featuring high (> 42 dB) isolation over the entire band. The switch is non-reflective at both RF1 and RF2 ports. Applications for this device include T/R switching for 5.2 GHz UNII, 5.8 GHz ISM circuits, WLAN, and S,C and XBand Telecom radios. SMT SPDT SWITCHES 7 Guaranteed Performance, With 0/-5V control, 50 Ohm System, -55 to +85 deg C Parameter Frequency Min. Typ. Max. Units 1.4 1.8 2.6 1.7 2.2 3.0 dB dB dB Inser tion Loss DC - 2 GHz DC - 6 GHz DC - 8 GHz Isolation DC - 2 GHz DC - 6 GHz DC - 8 GHz 50 38 36 54 45 40 dB dB dB Return Loss (on state) DC - 2 GHz DC - 6 GHz DC - 8 GHz 14 10 8 19 14 13 dB dB dB Input Power for 0.1 dB Compression 0.5 - 8 GHz +20 +25 dB m Input Power for 1dB Compression (0/-5V Ctl) 0.5 - 8 GHz +22 +27 dB m Input Third Order Intercept 0.5 - 8 GHz +38 +42 dB m 3 6 ns ns Switching Characteristics DC - 8 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 12 Elizabeth Drive, Chelmsford, MA 01824 7-6 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com '9 9 ne w ! HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 Isolation Insertion Loss 0 0 -10 ISOLATION (dB) INSERTION LOSS (dB) -1 -2 -3 -4 -20 -30 -40 -50 -60 -70 -5 0 2 4 6 FREQUENCY (GHz) 8 10 0 2 4 6 FREQUENCY (GHz) 8 10 7 SWITCHES Return Loss 0 Input -10 -20 SPDT RETURN LOSS (dB) Output "On" -30 Output "Off" 0 12 Elizabeth Drive, Chelmsford, MA 01824 2 4 6 FREQUENCY (GHz) Phone: 978-250-3343 8 SMT -40 10 Fax: 978-250-3373 Web Site: www.hittite.com 7-7 '9 9 n ew ! HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 Truth Table Schematic Control Input RF COM (PIN 7) RF1 PIN 1) RF2 (PIN 4) Signal Path State A B RF to RF1 RF to RF2 H i gh Low ON OFF Low H i gh OFF ON Do not "HOT" switch power levels > +15 dBm ( Vctl = 0/-5Vdc) Control Voltages (PINS 2,3,8 and BACKSIDE are GND) A B (PIN 5) (PIN 6) State Absolute Maximum Ratings +0.5 to -7.5 Vdc Storage Temperature -65 to +175 deg C Operating Temperature -55 to +85 deg C Low 0 to -0.2V @ 20uA Max. H i gh -5V@200uA Typ to -7V@600uA Max Outline 0.004 (0.10) COPLANARITY MAX. 0.197/0.203 (5.00/5.16) PIN 8 CHAMFERED RF GND COM B 0.095 (2.41) A MAX. 0.282/0.298 (7.16/7.57) SPDT SWITCHES 7 Control Voltage Range Bias Condition HMC 132C8 RF1 GND GND PIN 1 0 DEG. TO 7 DEG. 0.157/0.163 (3.99/4.14) 0.020/0.040 (0.51/1.02) RF2 0.007/0.009 TYP (0.18/0.23) 1. SMT 0.177/0.183 (0.18/0.23) 2. 3. 0.137/0.143 (3.48/3.63) RF GND PLANE COPLANAR WITH LEADS 0.050 TYP (1.27) 5. 0.020 +/- 0.003 TYP (0.51 +/- 0.08) 12 Elizabeth Drive, Chelmsford, MA 01824 7-8 4. MATERIAL: A) PACKAGE BODY & COVER : WHITE ALUMINA (92%) B) LEADS & PACKAGE BOTTOM: COPPER PLATING : ELECTROLYTIC GOLD 100 - 200 MICROINCHES OVER ELECTROLYTIC NICKEL 100 TO 200 MICROINCHES. DIMENSIONS ARE IN INCHES (MILLIMETERS). UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005(±0.13). ALL UNLABELED LEADS ARE GROUND. THESE LEADS ARE CONNECTED INTERNALLY TO THE PACKAGED BOTTOM GROUND. THE PACKAGE BOTTOM RF GROUND MUST BE SOLDERED TO THE PCB RF GROUND. PACKAGE LENGTH AND WIDTH DIMENSIONS SHOWN DO NOT INCLUDE LID SEAL PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.005 (0.127MM) PER SIDE. Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com '9 9 ne w ! HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 Suggested Driver Circuit for HMC132C8 Vz=5.1V Izt=50uA COMPENSATED DEVICES CD4689 TTL OR CMOS A GaAs SWITCH CONTROL VCC VCC GND GND 10K B 74HCT04 (TTL) 74HC04 (CMOS) -5 VDC 7 SMT SPDT SWITCHES Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7-9 '9 9 n ew ! HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 Evaluation Circuit Board SMT SPDT SWITCHES 7 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board as shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Layout Technique Grounded Co-Planar Waveguide (GCPW) Material Rogers 4350 Dielectric Thickness 0.020" (0.51 mm) 50 Ohm Line Width 0.034" (0.86 mm) Gap to Ground Edge 0.010" (0.25 mm) Ground VIA Hole Diameter 0.014" (0.36 mm) Connectors SMA-F ( EF - Johnson P/N 142-0701-806) 12 Elizabeth Drive, Chelmsford, MA 01824 7 - 10 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com '9 9 ne w ! HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH-ISOLATION SPDT SWITCH DC - 8 GHZ FEBRUARY 2001 NOTES: SMT SPDT SWITCHES 7 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 11