Hittite HMC634LC4 Gaas phemt mmic driver amplifier, 5 - 20 ghz Datasheet

HMC634LC4
v02.1109
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 20 GHz
Typical Applications
Features
The HMC634LC4 is ideal for:
Gain: 21 dB
• Point-to-Point Radios
P1dB: +22 dBm
• Point-to-Multi-Point Radios & VSAT
Saturated Power: +23 dBm @ 17% PAE
• LO Driver for Mixers
Single Supply Voltage: +5V @180 mA
• Military & Space
50 Ohm Matched Input/Output
24 Lead 4x4mm SMT Package: 16mm2
Functional Diagram
General Description
The HMC634LC4 is a GaAs PHEMT MMIC Driver
Amplifier in a leadless 4 x 4 mm ceramic surface
mount package which operates between 5 and 20
GHz The amplifier provides up to 21 dB of gain, +29
dBm Output IP3, and +22 dBm of output power at 1 dB
gain compression, while requiring 180 mA from a +5V
supply. The HMC634LC4 is an ideal driver amplifier
for microwave radio applications from 5 to 20 GHz,
and may be biased at +5V, 130 mA to provide lower
gain with optimized PAE. The amplifier’s I/Os are DC
blocked and matched to 50 Ohms with no external
matching required.
Electrical Specifi cations, TA = +25° C, Vdd1-4= 5V, Idd= 180 mA [1]
Parameter
Min.
Frequency Range
Gain
18
Gain Variation Over Temperature
Max.
Min.
17
0.035
22
16
dB
0.030
dB/ °C
dB
13
dB
20
dBm
Saturated Output Power (Psat)
23
20.5
dBm
Output Third Order Intercept (IP3)
29
28
dBm
Noise Figure
7.5
7.5
dB
Supply Current (Idd) (Idd = Idd1 + Idd2 + Idd3 + Idd4)
180
180
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd= 180 mA Typical.
9 - 162
Units
GHz
14
14
19
Max.
20
0.020
18
Output Return Loss
Typ.
16 - 20
21
0.025
Input Return Loss
Output Power for 1 dB Compression (P1dB)
Typ.
5 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC634LC4
v02.1109
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 20 GHz
Gain vs. Temperature
30
20
25
10
9
20
S11
S21
S22
0
15
-10
10
-20
5
-30
+25 C
+85 C
-40 C
0
2
4
6
8
10
12
14
16
18
20
22
24
2
4
6
8
FREQUENCY (GHz)
Input Return Loss vs. Temperature
14
16
18
20
22
24
0
-5
-5
+25 C
-40 C
+85 C
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
12
Output Return Loss vs. Temperature
0
-15
-20
-25
-10
-15
-20
+25 C
+85 C
-40 C
-25
-30
-30
2
4
6
8
10
12
14
16
18
20
22
24
2
4
6
8
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
30
30
28
28
+25 C
+85 C
-40 C
26
Psat (dBm)
26
P1dB (dBm)
10
FREQUENCY (GHz)
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
30
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
24
22
24
22
20
20
18
18
16
+25 C
+85 C
-40 C
16
4
6
8
10
12
14
16
FREQUENCY (GHz)
18
20
22
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 163
HMC634LC4
v02.1109
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 20 GHz
Power Compression @ 20 GHz
Power Compression @ 12.5 GHz
25
20
15
10
Pout (dBm)
Gain (dB)
PAE (%)
5
-8
-6
-4
-2
0
2
4
Pout (dBm)
Gain (dB)
PAE (%)
25
20
15
10
5
0
-10
6
-8
-6
INPUT POWER (dBm)
-4
0
2
4
6
Noise Figure vs. Temperature
16
36
NOISE FIGURE (dB)
32
IP3 (dBm)
-2
INPUT POWER (dBm)
Output IP3 vs. Temperature
28
24
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
12
8
4
20
16
0
2
4
6
8
10
12
14
16
18
6
20
8
10
FREQUENCY (GHz)
12
14
16
18
FREQUENCY (GHz)
Gain & Power vs.
Supply Voltage @ 12.5 GHz
Reverse Isolation vs. Temperature
25
0
-10
Gain
P1dB
Psat
-20
ISOLATION (dB)
24
23
22
+25 C
+85 C
-40 C
-30
-40
-50
-60
21
-70
20
4.5
-80
4.7
4.9
5.1
Vdd (V)
9 - 164
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
30
0
-10
GAIN (dB), P1dB (dBm), Psat (dBm)
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
30
5.3
5.5
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
22
24
HMC634LC4
v02.1109
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 20 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3,
Vdd4)
+5.5 Vdc
Gate Bias Voltage (Vgg)
-3 to 0 Vdc
Idd
180
30
150
25
20
Gain
P1dB
Psat
IP3
90
15
-0.88
120
-0.84
-0.8
-0.76
RF Input Power (RFIN)(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 11.17 mW/°C above 85 °C)
1W
Thermal Resistance
(channel to package bottom)
89.46 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
-0.72
Vgg (V)
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
4.5
177
5.0
180
5.5
183
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Note: Amplifi er will operate over full voltage ranges shown above
Outline Drawing
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
210
35
Idd (mA)
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Gain, Power & Output IP3
vs. Gate Voltage @ 12.5 GHz
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80
MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 165
HMC634LC4
v02.1109
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 20 GHz
Pin Descriptions
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 166
Pin Number
Function
Description
1, 5 - 8,
10 - 14, 18,
21, 23
N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
2, 4, 15, 17
GND
Package Bottom must
be connected to RF/DC ground.
3
RFIN
This pin is AC coupled
and matched to 50 Ohms.
9
Vgg
Gate control for amplifier, please follow “MMIC Amplifier
Biasing Procedure” Application Note: See application
circuit for required external components.
16
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
24, 22,
20, 19
Vdd1, Vdd2,
Vdd3, Vdd4
Power Supply Voltage for the amplifier. See application
circuit for required external components.
Interface Schematic
Application Circuit
Component
Value
C1 - C5
100 pF
C6 - C10
1000 pF
C11 - C15
2.2 μF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC634LC4
v02.1109
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 20 GHz
Evaluation PCB
List of Materials for Evaluation PCB 115857 [1]
Item
Description
J1 - J2
2.92 mm PC Mount K-Connector
VD1 - VD4
DC Pin
C1 - C5
100 pF Capacitor, 0402 Pkg.
C6 - C10
1000 pF Capacitor, 0603 Pkg.
C11 - C15
2.2 μF Capacitor, Tantalum
U1
HMC634LC4 Driver Amplifier
PCB [2]
115855 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and exposed paddle should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 167
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