HMPS-282x Series MiniPak Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These ultra-miniature products represent the blending of Avago Technologies’ proven semiconductor and the latest in leadless packaging. This series of Schottky diodes is the most consistent and best all-round device available, and finds applications in mixing, detecting, switching, sampling, clamping and wave shaping at frequencies up to 6 GHz. The MiniPak package offers reduced parasitics when compared to conventional leaded diodes, and lower thermal resistance. • Surface mount MiniPak package The HMPS-282x family of diodes offers the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. • Better thermal conductivity for higher power dissipation • Single and dual versions • Matched diodes for consistent performance • Low turn-on voltage (as low as 0.34 V at 1 mA) • Low FIT (Failure in Time) rate* • Six-sigma quality level • For more information, see the Surface Mount Schottky Reliability Data Sheet. Note that Avago’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. Minipak 1412 is a ceramic based package, while Minipak QFN is a leadframe based package. Pin Connections and Package Marking Package Lead Code Identification (Top View) Single 3 2 Anti-parallel 4 3 1 2 Parallel 4 3 1 2 4 1 #0 #2 #5 (MiniPak 1412) (MiniPak 1412) (MiniPak 1412) 3 AA 2 Product code Anti-parallel 3 2 Parallel 4 3 1 2 4 1 #2 #5 (MiniPak QFN) (MiniPak QFN) 4 1 Date code Notes: 1. Package marking provides orientation and identification. 2. See “Electrical Specifications” for appropriate package marking. HMPS-282x Series Absolute Maximum Ratings [1], Tc = 25°C Symbol Parameter Units MiniPak 1412/ MiniPak QFN If Forward Current (1 µs pulse) A 1 PIV Peak Inverse Voltage V 15 Tj Junction Temperature °C 150 Tstg Storage Temperature °C -65 to +150 θ jc Thermal Resistance [2] °C/W 150 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board. MiniPak 1412 Electrical Specifications, Tc = +25°C, Single Diode [4] Part Package Number Marking Lead HMPS- Code Code Minimum Breakdown Voltage Configuration VBR (V) Maximum Forward Voltage VF (mV) Maximum Forward Voltage VF (V) @ IF (mA) Maximum Reverse Leakage IR (nA) @ VR (V) Typical Maximum Dynamic Capacitance Resistance CT (pF) RD (Ω)[4] 2820 Single 15 340 0.5 100 1.0 12 IR = 100 μA IF = 1 mA[1] VF = 0 V f=1 MHz[2] IF = 5 mA L 0 Test Conditions 10 1 Notes: 1. ∆VF for diodes in pairs is 15 mV maximum at 1 mA. 2. ∆CTO for diodes in pairs is 0.2 pF maximum. 3. Effective carrier lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. RD = RS + 5.2Ω at 25°C and If = 5 mA. MiniPak QFN Electrical Specifications, Tc = +25°C, Single Diode [4] Part Number HMPS- Package Marking Lead Code Code Minimum Breakdown Voltage Configuration VBR (V) Maximum Forward Voltage VF (mV) Maximum Forward Voltage VF (V) @ IF (mA) Maximum Reverse Leakage IR (nA) @ VR (V) Typical Maximum Dynamic Capacitance Resistance CT (pF) RD (Ω)[4] 2822 2825 3 2 Anti-parallel Parallel 15 340 0.5 100 1.0 12 IR = 100 μA IF = 1 mA[1] VF = 0 V f=1 MHz[2] IF = 5 mA Test Conditions 2 5 10 1 Notes: 1. ∆VF for diodes in pairs is 15 mV maximum at 1 mA. 2. ∆CTO for diodes in pairs is 0.2 pF maximum. 3. Effective carrier lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. RD = RS + 5.2Ω at 25°C and If = 5 mA. ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. Linear Equivalent Circuit Model Diode Chip Rj RS Cj RS = series resistance (see Table of SPICE parameters) Cj = junction capacitance (see Table of SPICE parameters) 8.33 X 10-5 nT Rj = I b + Is where Ib = externally applied bias current in amps Is = saturation current (see table of SPICE parameters) T = temperature, °K n = ideality factor (see table of SPICE parameters) SPICE Parameters Parameter Units HMPS-282x BV V 15 CJ0 pF 0.7 EG eV 0.60 IBV A 1E-4 IS A 2.2E-8 N 1.08 RS Ω 8.0 PB V 0.65 PT 2 M 0.5 Note: To effectively model the packaged HSMS-282x product, please refer to Application Note AN1124. MiniPak 1412 Linear Circuit Model of the Diode’s Package Minipak QFN Linear Circuit Model of the Diode’s Package 20 fF 3 30 fF 2 19 fF 4 30 fF 1.1 nH 3 1 2 0.043 nH 20 fF 0.045 nH 0.328 nH 0.328 nH 0.053 nH 0.329 nH 2 fF 0.329 nH 16 fF 0.053 nH 4 1 20 fF Single diode package (HMPx-x8x0) 18 fF Parallel diode package (HMPx-x8x5) 19 fF 3 2 0.043 nH 0.328 nH 0.328 nH 0.053 nH 20 fF 0.045 nH 0.329 nH 2 fF 0.329 nH 16 fF 0.053 nH 18 fF Anti-Parallel diode package (HMPx-x8x2) 4 1 MiniPak 1412 HMPS-282x Series Typical Performance Tc = 25°C (unless otherwise noted), Single Diode 1 10,000 0.8 0.1 1000 100 TA = +125°C TA = +75°C TA = +25°C 10 1 0.01 0.20 0.30 0.40 0 0.50 5 Figure 1. Forward Current vs. Forward Voltage at Temperatures. 30 IF - FORWARD CURRENT (mA) RD – DYNAMIC RESISTANCE (Ω) 100 10 1 10 0.2 0.4 0.6 0.8 1.0 1.2 1 8 1.0 IF (Left Scale) 10 ΔVF (Right Scale) 1 0.10 0.3 1.4 0.15 0.1 0.25 0.20 VF - FORWARD VOLTAGE (V) Figure 6. Typical Vf Match, Series Pairs at Detector Bias Levels. Figure 5. Typical Vf Match, Series Pairs and Quads at Mixer Bias Levels. 1 6 100 VF - FORWARD VOLTAGE (V) Figure 4. Dynamic Resistance vs. Forward Current. 10 -25°C +25°C +75°C 0.1 RF in 0.01 18 nH 3.3 nH -30 10 1 DC bias = 3 μA -20 HSMS-282B 100 pF Vo 0.1 0.01 0.001 +25°C 0 Pin – INPUT POWER (dBm) Figure 7. Typical Output Voltage vs. Input Power, Small Signal Detector Operating at 850 MHz. 1E-005 -20 HSMS-282B RF in 68 Ω 0.0001 100 KΩ -10 VO – OUTPUT VOLTAGE (V) VO – OUTPUT VOLTAGE (V) 10 ΔVF (Right Scale) 1 0.3 100 IF (Left Scale) 10 4 Figure 3. Total Capacitance vs. Reverse Voltage at 1MHz 30 IF – FORWARD CURRENT (mA) 2 VR – REVERSE VOLTAGE (V) Figure 2. Reverse Current vs. Reverse Voltage at Temperatures. 1000 1 0.1 0 15 VR – REVERSE VOLTAGE (V) VF – FORWARD VOLTAGE (V) 0.001 -40 0 10 IF - FORWARD CURRENT (μA) 0.10 0.4 0.2 -10 Vo 100 pF 0 10 CONVERSION LOSS (dB) 0 0.6 ΔVF - FORWARD VOLTAGE DIFFERENCE (mV) 1 ΔVF - FORWARD VOLTAGE DIFFERENCE (mV) 10 100,000 CT – CAPACITANCE (pF) TA = +125°C TA = +75°C TA = +25°C TA = –25°C IR – REVERSE CURRENT (nA) IF – FORWARD CURRENT (mA) 100 9 8 7 4.7 KΩ 20 Pin – INPUT POWER (dBm) Figure 8. Typical Output Voltage vs. Input Power, Large Signal Detector Operating at 915 MHz. 30 6 0 2 4 6 8 10 12 LOCAL OSCILLATOR POWER (dBm) Figure 9. Typical Conversion Loss vs. L.O. Drive, 2.0 GHz (Ref AN997). MiniPak QFN HMPS-2825 Series Typical Performance Tc = 25°C (unless otherwise noted), Single Diode 0.1 0.1 0.2 0.8 0.3 0.4 1000 100 TA = +125°C TA = +75°C TA = +25°C 10 1 0.5 0 V F - FORWARD VOLTAGE (V) IF - FORWARD CURRENT (mA) RD - DYNAMIC RESISTANCE (ohms) 100 10 1.0 10.0 100.0 Figure 13. Dynamic Resistance vs. Forward Current. CONVERSION LOSS (dB) 9 8 7 4 6 8 ∆VF (Right Scale) 1 0.3 10 0.2 0.4 0.6 0.8 1.0 1.2 Figure 14. Typical Vf Match, Series Pairs and Quads at Mixer Bias Levels. 10 2 IF (Left Scale) 10 10 12 LOCAL OSCILLATOR POWER (dBm) Figure 16. Typical Conversion Loss vs. L.O. Drive, 2.0 GHz (Ref AN997). 2 4 6 8 Figure 12. Total Capacitance vs. Reverse Voltage at 1MHz 100 30 VF - FORWARD VOLTAGE (V) I F - FORWARD CURRENT (mA) 0 0 V R - REVERSE VOLTAGE (V) 30 1 0.1 0.2 0.0 15 Figure 11. Reverse Current vs. Reverse Voltage at Temperatures. 1000 10 0.4 V R – REVERSE VOLTAGE (V) Figure 10. Forward Current vs. Forward Voltage at Temperatures. 6 5 0.6 1 0.3 1.4 IF - FORWARD CURRENT (µA) 0 10000 1.0 IF (Left Scale) 10 ∆VF (Right Scale) 1 0.10 0.15 0.20 VF - FORWARD VOLTAGE (V) Figure 15. Typical Vf Match, Series Pairs at Detector Bias Levels. ∆VF - FORWARD VOLTAGE DIFFERENCE (mV) 1 0.01 1.0 ∆VF - FORWARD VOLTAGE DIFFERENCE (mV) 10 100000 C T - CAPACITANCE (pF) TA = +125°C TA = +75°C TA = +25°C TA = -25°C IR – REVERSE CURRENT (nA) IF - FORWARD CURRENT (mA) 100 0.1 0.25 Assembly Information SMT Assembly The MiniPak diode is mounted to the PCB or microstrip board using the pad pattern shown in Figure 17. Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the MiniPak package, will reach solder reflow temperatures faster than those with a greater mass. 0.4 0.5 0.4 0.3 0.5 0.3 Figure 17. PCB Pad Layout, MiniPak (dimensions in mm). This mounting pad pattern is satisfactory for most applications. However, there are applications where a high degree of isolation is required between one diode and the other is required. For such applications, the mounting pad pattern of Figure 18 is recommended. 0.40 mm via hole (4 places) 0.20 2.40 0.8 0.40 2.60 Figure 18. PCB Pad Layout, High Isolation MiniPak (dimensions in mm). This pattern uses four via holes, connecting the crossed ground strip pattern to the ground plane of the board. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. The rates of change of temperature for the ramp-up and cool-down zones are chosen to be low enough to not cause deformation of the board or damage to components due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 255°C. These parameters are typical for a surface mount assembly process for Avago diodes. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder. MiniPak 1412 Outline Drawing 1.44 (0.057) 1.40 (0.055) 1.12 (0.044) 1.08 (0.043) 0.82 (0.032) 0.78 (0.031) 1.20 (0.047) 1.16 (0.046) 0.32 (0.013) 0.28 (0.01 1) 0.00 Top view -0.07 (-0.003) -0.03 (-0.001) 0.70 (0.028 ) 0.58 (0.023) -0.07 (-0.003) -0.03 (-0.001) 0.92 (0.036) 0.88 (0.035) 0.00 0.42 (0.017) 0.38 (0.015) 1.32 (0.052) 1.28 (0.050) Bottom view Side view Dimensions are in millimeters (inches) MiniPak QFN Outline Drawing 1.47 (0.058) 0.50 (0.020) 1.37 (0.054) 0.28 (0.011) 1.23 (0.048) 1.13 (0.044) 0.50 (0.020) 0.28 (0.011) Top View 0.35 (0.014) 0.40 (0.016) 0.30 (0.012) 0.60 (0.024) 0.60 (0.024) 0.50 (0.020) Side View Bottom View Dimensions are in millimeters (inches) Ordering Information Part Number No. of Devices Container HMPS-282x-TR2 10000 13˝ Reel HMPS-282x-TR1 3000 7˝ Reel HMPS-282x-BLK 100 antistatic bag Device Orientation REEL 4 mm AA AA AA AA 8 mm CARRIER TAPE TOP VIEW USER FEED DIRECTION END VIEW Note: “AA” represents package marking code. Package marking is right side up with carrier tape perforations at top. Conforms to Electronic Industries RS-481, “Taping of Surface Mounted Components for Automated Placement.” Standard quantity is 3,000 devices per reel. COVER TAPE Tape Dimensions and Product Orientation For Outline 4T (MiniPak 1412 & MiniPak QFN) P P2 D P0 E F W C D1 t 1 (CARRIER TAPE THICKNESS) K0 5 ° MAX. 5 ° MAX. A0 DESCRIPTION T t (COVER TAPE THICKNESS) B0 SYMBOL SIZE (mm) SIZE (INCHES) 0.055 0.064 0.031 0.157 0.031 ± 0.05 ± 0.05 ± 0.05 ± 0.10 ± 0.05 ± 0.002 ± 0.002 ± 0.002 ± 0.004 ± 0.002 CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 1.40 1.63 0.80 4.00 0.80 PERFORATION DIAMETER PITCH POSITION D P0 E 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 - 0.004 0.010 ± 0.001 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.213 ± 0.004 0.002 ± 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-3628EN AV02-0571EN - January 23, 2009