Hitachi HN58X2402STI Two-wire serial interface (2k eeprom 256-word x 8-bit) 4k eeprom (512-word x 8-bit) Datasheet

HN58X2402SI/HN58X2404SI
Two-wire serial interface
2k EEPROM (256-word × 8-bit)
4k EEPROM (512-word × 8-bit)
ADE-203-1105A (Z)
Rev. 1.0
Nov. 30, 2000
Description
HN58X24xxSI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also
have a 8-byte page programming function to make their write operation faster.
Note: Hitachi’s serial EEPROM are authorized for using consumer applications such as cellular phone,
camcorders, audio equipment. Therefore, please contact Hitachi’s sales office before using
industrial applications such as automotive systems, embedded controllers, and meters.
Features
•
•
•
•
•
•
•
•
Single supply: 1.8 V to 5.5 V
Two-wire serial interface (I2CTM serial bus* 1)
Clock frequency: 400 kHz
Power dissipation:
 Standby: 3 µA (max)
 Active (Read): 1 mA (max)
 Active (Write): 3 mA (max)
Automatic page write: 8-byte/page
Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
Endurance: 10 5 Cycles (Page write mode)
Data retention: 10 Years
HN58X2402SI/HN58X2404SI
• Small size packages: TSSOP 8-pin and SOP 8-pin
• Shipping tape and reel
 TSSOP 8-pin: 3,000 IC/reel
 SOP 8-pin: 2,500 IC/reel
Note: 1. I2C is a trademark of Philips Corporation.
Ordering Information
Type No.
Internal organization Operating voltage
Frequency
Package
HN58X2402SFPI
2k bit (256 × 8-bit)
1.8 V to 5.5 V
400 kHz
150 mil 8-pin plastic SOP
(FP-8DB)
HN58X2404SFPI
4k bit (512 × 8-bit)
HN58X2402STI
2k bit (256 × 8-bit)
1.8 V to 5.5 V
400 kHz
8-pin plastic TSSOP
(TTP-8DA)
HN58X2404STI
4k bit (512 × 8-bit)
Pin Arrangement
8-pin TSSOP
8-pin SOP
A0
1
8
VCC
A1
2
7
WP
A2
3
6
SCL
VSS
4
5
SDA
(Top view)
Pin Description
Pin name
Function
A0 to A2
Device address
SCL
Serial clock input
SDA
Serial data input/output
WP
Write protect
VCC
Power supply
VSS
Ground
2
HN58X2402SI/HN58X2404SI
Block Diagram
High voltage generator
Control
logic
A0, A1, A2
SCL
X decoder
WP
Address generator
VSS
Memory array
Y decoder
VCC
Y-serect & Sense amp.
SDA
Serial-parallel converter
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
VCC
–0.6 to +7.0
Vin
2
–0.5* to +7.0*
Topr
–40 to +85
˚C
Tstg
–65 to +125
˚C
Input voltage relative to V SS
Operating temperature range*
1
Storage temperature range
Unit
V
3
V
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): –3.0 V for pulse width 50 ns.
3. Should not exceed VCC + 1.0 V.
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
1.8
—
5.5
V
VSS
0
0
0
V
VIH
VCC × 0.7
—
VCC + 1.0
V
Input high voltage
Input low voltage
VIL
–0.3*
—
VCC × 0.3
V
Operating temperature
Topr
–40
—
85
˚C
Note:
1
1. VIL (min): –1.0 V for pulse width 50 ns.
3
HN58X2402SI/HN58X2404SI
DC Characteristics (Ta = –40 to +85˚C, VCC = 1.8 V to 5.5 V)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input leakage current
I LI
—
—
2.0
µA
VCC = 5.5 V, Vin = 0 to 5.5 V (SCL, SDA)
—
—
20
µA
VCC = 5.5 V, Vin = 0 to 5.5 V (A0 to A2, WP)
Output leakage current
I LO
—
—
2.0
µA
VCC = 5.5 V, Vout = 0 to 5.5 V
Standby V CC current
I SB
—
1.0
3.0
µA
Vin = VSS or VCC
Read VCC current
I CC1
—
—
1.0
mA
VCC = 5.5 V, Read at 400 kHz
Write VCC current
I CC2
—
—
3.0
mA
VCC = 5.5 V, Write at 400 kHz
Output low voltage
VOL2
—
—
0.4
V
VCC = 4.5 to 5.5 V, IOL = 1.6 mA
VCC = 2.7 to 4.5 V, IOL = 0.8 mA
VCC = 1.8 to 2.7 V, IOL = 0.4 mA
VOL1
—
—
0.2
V
VCC = 1.8 to 2.7 V, IOL = 0.2 mA
Capacitance (Ta = 25˚C, f = 1 MHz)
Min
Typ
Max
Unit
Test
conditions
Input capacitance (A0 to A2, SCL, WP) Cin*1
—
—
6.0
pF
Vin = 0 V
1
—
—
6.0
pF
Vout = 0 V
Parameter
Output capacitance (SDA)
Note:
4
Symbol
CI/O*
1. This parameter is sampled and not 100% tested.
HN58X2402SI/HN58X2404SI
AC Characteristics (Ta = –40 to +85˚C, VCC = 1.8 to 5.5 V)
Test Conditions
• Input pules levels:
 VIL = 0.2 × VCC
 VIH = 0.8 × VCC
• Input rise and fall time: 20 ns
• Input and output timing reference levels: 0.5 × VCC
• Output load: TTL Gate + 100 pF
Parameter
Symbol
Min
Typ
Max
Unit
Clock frequency
f SCL
—
—
400
kHz
Clock pulse width low
t LOW
1200
—
—
ns
Clock pulse width high
t HIGH
600
—
—
ns
Noise suppression time
tI
—
—
50
ns
Access time
t AA
100
—
900
ns
Bus free time for next mode
t BUF
1200
—
—
ns
Start hold time
t HD.STA
600
—
—
ns
Start setup time
t SU.STA
600
—
—
ns
Data in hold time
t HD.DAT
0
—
—
ns
Data in setup time
t SU.DAT
100
—
—
ns
Input rise time
tR
—
—
300
ns
1
Input fall time
tF
—
—
300
ns
1
Stop setup time
t SU.STO
600
—
—
ns
Data out hold time
t DH
50
—
—
ns
VCC = 2.7 V to 5.5 V
t WC
—
—
10
ms
2
VCC = 1.8 V to 2.7 V
t WC
—
—
15
ms
2
Write cycle time
Notes
1
Notes: 1. This parameter is sampled and not 100% tested.
2. t WC is the time from a stop condition to the end of internally controlled write cycle.
5
HN58X2402SI/HN58X2404SI
Timing Waveforms
Bus Timing
tF
tHIGH
1/fSCL
tLOW
tR
SCL
tSU.STA
tHD.DAT
tSU.DAT
tHD.STA
tSU.STO
SDA
(in)
tBUF
tAA
tDH
SDA
(out)
Write Cycle Timing
Stop condition
Start condition
SCL
SDA
D0 in
Write data
(Address (n))
6
ACK
tWC
(Internally controlled)
HN58X2402SI/HN58X2404SI
Pin Function
Serial Clock (SCL)
The SCL pin is used to control serial input/output data timing. The SCL input is used to positive edge
clock data into EEPROM device and negative edge clock data out of each device. Maximum clock rate is
400 kHz.
Serial Input/Output data (SDA)
The SDA pin is bidirectional for serial data transfer. The SDA pin needs to be pulled up by resistor as that
pin is open-drain driven structure. Use proper resistor value for your system by considering VOL, IOL and
the SDA pin capacitance. Except for a start condition and a stop condition which will be discussed later,
the SDA transition needs to be completed during SCL low period.
Data Validity (SDA data change timing waveform)
SCL
SDA
Data
change
Note:
Data
change
High-to-low and low-to-high change of SDA should be done during SCL low periods.
7
HN58X2402SI/HN58X2404SI
Device Address (A0, A1, A2)
UP to eight devices for 2k, four devices for 4k, can be addressed on the same bus by setting the levels on
these pins to different combinations. The levels on these pins are compared with the device address code
which are input through the SDA pin. The device is selected if the compare is successfully done. These
pins are internally pulled-down to VSS. The device read these pins as Low if unconnected. As for 4k, it is
unneccesary for the A0 pin to be connected because the corresponding device address code is used as
memory address a8.
Pin Connections for A0 to A2
Pin connection
Max connect
Memory size number
A2
A1
1
A0
2k bit
8
VCC/V SS * VCC/V SS
VCC/V SS
4k bit
4
VCC/V SS
×* 2
VCC/V SS
Notes
Use A0 for memory address a8
Notes: 1. “VCC/V SS ” means that the device address pins are connected to VCC or VSS. These pins are V SS if
unconnected.
2. × = Don’t care (Open is also approval.)
Write Protect (WP)
When the Write Protect pin (WP) is high, the write protections feature is enabled and operates as shown in
the following table. When the WP is low, write operations for all memory array are allowed. The read
operation is always activated irrespective of the WP pin status. The WP pin is internally pull-down to VSS.
Write operations for all memory array are allowed if unconnected.
Write Protect Area
Write protect area
WP pin status
2k bit
4k bit
VIH
Entire (2k bit)
Entire (4k bit)
VIL
Normal read/write operation
8
HN58X2402SI/HN58X2404SI
Functional Description
Start Condition
A high-to-low transition of the SDA with the SCL high is needed in order to start read, write operation.
(See start condition and stop condition)
Stop Condition
A low-to-high transition of the SDA with the SCL high is a stop condition. The stand-by operation starts
after a read sequence by a stop condition. In the case of write operation, a stop condition terminates the
write data inputs and place the device in a internally-timed write cycle to the memories. After the
internally-timed write cycle which is specified as tWC, the device enters a standby mode. (See write cycle
timing)
Start Condition and Stop Condition
SCL
SDA
(in)
Start condition
Stop condition
9
HN58X2402SI/HN58X2404SI
Acknowledge
All addresses and data words are serially transmitted to and from in 8-bit words. The receiver sends a zero
to acknowledge that it has received each word. This happens during ninth clock cycle. The transmitter
keeps bus open to receive acknowledgment from the receiver at the ninth clock. In the write operation,
EEPROM sends a zero to acknowledge after receiving every 8-bit words. In the read operation, EEPROM
sends a zero to acknowledge after receiving the device address word. After sending read data, the
EEPROM waits acknowledgment by keeping bus open. If the EEPROM receives zero as an acknowledge,
it sends read data of next address. If the EEPROM receives acknowledgment "1" (no acknowledgment) and
a following stop condition, it stops the read operation and enters a stand-by mode. If the EEPROM
receives neither acknowledgment "0" nor a stop condition, the EEPROM keeps bus open without sending
read data.
Acknowledge Timing Waveform
SCL
SDA IN
SDA OUT
10
1
2
8
9
Acknowledge
out
HN58X2402SI/HN58X2404SI
Device Addressing
The EEPROM device requires an 8-bit device address word following a start condition to enable the chip
for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device address
code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are used to
distinguish device type and this EEPROM uses “1010” fixed code. The device address word is followed by
the 3-bit device address code in the order of A2, A1, A0. The device address code selects one device out of
all devices which are connected to the bus. This means that the device is selected if the inputted 3-bit
device address code is equal to the corresponding hard-wired A2-A0 pin status. As for the 4kbit
EEPROMs, some bits of their device address code may be used as the memory address bits. For example,
A0 is used as a8 of memory address for the 4kbit. The eighth bit of the device address word is the
read/write(R/W) bit. A write operation is initiated if this bit is low and a read operation is initiated if this bit
is high. Upon a compare of the device address word, the EEPROM enters the read or write operation after
outputting the zero as an acknowledge. The EEPROM turns to a stand-by state if the device code is not
“1010” or device address code doesn’t coincide with status of the correspond hard-wired device address
pins A0 to A2.
Device Address Word
Device address word (8-bit)
Device address code*1
Device code (fixed)
R/W code*2
2k
1
0
1
0
A2
A1
A0
R/W
4k
1
0
1
0
A2
A1
a8
R/W
Notes: 1. A2 to A0 are device address and a8 are memory address.
2. R/W=“1” is read and R/W = “0” is write.
11
HN58X2402SI/HN58X2404SI
Write Operations
Byte Write:
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends
acknowledgment "0" at the ninth clock cycle. After these, EEPROMs receive 8-bit memory address word.
Upon receipt of this memory address, the EEPROM outputs acknowledgment "0" and receives a following
8-bit write data. After receipt of write data, the EEPROM outputs acknowledgment "0". If the EEPROM
receives a stop condition, the EEPROM enters an internally-timed write cycle and terminates receipt of
SCL, SDA inputs until completion of the write cycle. The EEPROM returns to a standby mode after
completion of the write cycle.
2k, 4k
1010
Memory
address (n)
Write data (n)
D7
D6
D5
D4
D3
D2
D1
D0
Device
address
a7
a6
a5
a4
a3
a2
a1
a0
Byte Write Operation
W
ACK
R/W
Start
ACK
ACK
Stop
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 8 bytes to be
written in a single write cycle. The page write is the same sequence as the byte write except for inputting
the more write data. The page write is initiated by a start condition, device address word, memory
address(n) and write data(Dn) with every ninth bit acknowledgment. The EEPROM enters the page write
operation if the EEPROM receives more write data(Dn+1) instead of receiving a stop condition. The a0 to
a2 address bits are automatically incremented upon receiving write data(Dn+1). The EEPROM can
continue to receive write data up to 8 bytes. If the a0 to a2 address bits reaches the last address of the page,
the a0 to a2 address bits will roll over to the first address of the same page and previous write data will be
overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters
internally-timed write cycle.
Start
12
1010
W
Write data (n)
ACK
R/W
ACK
ACK
Write data (n+m)
D5
D4
D3
D2
D1
D0
2k, 4k
Memory
address (n)
D7
D6
D5
D4
D3
D2
D1
D0
Device
address
a7
a6
a5
a4
a3
a2
a1
a0
Page Write Operation
Stop
ACK
HN58X2402SI/HN58X2404SI
Acknowledge Polling:
Acknowledge polling feature is used to show if the EEPROM is in a internally-timed write cycle or not.
This features is initiated by the stop condition after inputting write data. This requires the 8-bit device
address word following the start condition during a internally-timed write cycle. Acknowledge polling will
operate R/W code = “0”. Acknowledgment “1” (no acknowledgment) shows the EEPROM is in a
internally-timed write cycle and acknowledgment “0” shows that the internally-timed write cycle has
completed. See Write Cycle Polling using ACK.
Write Cycle Polling using ACK
Send
write command
Send
stop condition
to initiate write cycle
Send
start condition
Send
device address word
with R/W = 0
ACK
returned
No
Yes
Next operation is
addressing the memory
No
Yes
Proceed write operation
Send
memory address
Send
start condition
Proceed random address
read operation
Send
stop condition
Send
stop condition
13
HN58X2402SI/HN58X2404SI
Read Operation
There are three read operations: current address read, random read, and sequential read. Read operations are
initiated the same way as write operations with the exception of R/W = “1”.
Current Address Read:
The internal address counter maintains the last address accessed during the last read or write operation,
with incremented by one. Current address read accesses the address kept by the internal address counter.
After receiving a start condition and the device address word(R/W is “1”), the EEPROM outputs the 8-bit
current address data from the most significant bit following acknowledgment “0” If the EEPROM receives
acknowledgment “1” (no acknowledgment) and a following stop condition, the EEPROM stops the read
operation and is turned to a standby state. In case the EEPROM have accessed the last address of the last
page at previous read operation, the current address will roll over and returns to zero address. In case the
EEPROM have accessed the last address of the page at previous write operation, the current address will
roll over within page addressing and returns to the first address in the same page. The current address is
valid while power is on. The current address after power on will be indefinite. The random read operation
described below is necessary to define the memory address.
Current Address Read Operation
Device
address
1010
R
Start
Note: 1. Don‘t care bit for 4k.
14
D7
D6
D5
D4
D3
D2
D1
D0
*1
2k, 4k
Read data (n+1)
ACK
R/W
No ACK
Stop
HN58X2402SI/HN58X2404SI
Random Read:
This is a read operation with defined read address. A random read requires a dummy write to set read
address. The EEPROM receives a start condition, device address word(R/W=0) and memory address
sequentially. The EEPROM outputs acknowledgment “0” after receiving memory address then enters a
current address read with receiving a start condition. The EEPROM outputs the read data of the address
which was defined in the dummy write operation. After receiving acknowledgment “1”(no
acknowledgment) and a following stop condition, the EEPROM stops the random read operation and
returns to a standby state.
Random Read Operation
1010
@@@
Device
address
a7
a6
a5
a4
a3
a2
a1
a0
2k, 4k
Memory
address (n)
W
R
Start
ACK
ACK
R/W
Start
1010
Read data (n)
# # #
Dummy write
D7
D6
D5
D4
D3
D2
D1
D0
Device
address
ACK No ACK
Stop
R/W
Currect address read
Note: 1. 2nd device address code (#) should be same as 1st (@).
Sequential Read:
Sequential reads are initiated by either a current address read or a random read. If the EEPROM receives
acknowledgment “0” after 8-bit read data, the read address is incremented and the next 8-bit read data are
coming out. This operation can be continued as long as the EEPROM receives acknowledgment “0”. The
address will roll over and returns address zero if it reaches the last address of the last page. The sequential
read can be continued after roll over. The sequential read is terminated if the EEPROM receives
acknowledgment “1” (no acknowledgment) and a following stop condition.
Sequential Read Operation
ACK
R/W
ACK
ACK
ACK
D5
D4
D3
D2
D1
D0
R
Read data (n+1) Read data (n+2) Read data (n+m)
D7
D6
D5
D4
D3
D2
D1
D0
Start
1010
Read data (n)
D7
D6
D5
D4
D3
D2
D1
D0
2k, 4k
D7
D6
D5
D4
D3
D2
D1
D0
Device
address
No ACK
Stop
15
HN58X2402SI/HN58X2404SI
Notes
Data protection at VCC On/Off
When VCC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc)
may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional
programming, this EEPROM have a power on reset function. Be careful of the notices described below in
order for the power on reset function to operate correctly.
• SCL and SDA should be fixed to VCC or VSS during VCC on/off. Low to high or high to low transition
during VCC on/off may cause the trigger for the unintentional programming.
• VCC should be turned off after the EEPROM is placed in a standby state.
• VCC should be turned on from the ground level(VSS ) in order for the EEPROM not to enter the
unintentional programming mode.
• VCC turn on speed should be longer than 10 us.
Write/Erase Endurance and Data retention Time
The endurance is 10 5 cycles in case of page programming and 104 cycles in case of byte programming (1%
cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed
less than 104 cycles.
Noise Suppression Time
This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than
50 ns. Be careful not to allow noise of width more than 50 ns.
16
HN58X2402SI/HN58X2404SI
Package Dimensions
HN58X2402SFPI/HN58X2404SFPI (FP-8DB)
Unit: mm
3.90
4.89
5.15 Max
5
8
0.69 Max
0.034
*0.22 +– 0.017
0.20 ± 0.03
4
1.73 Max
1
6.02 ± 0.18
1.06
*0.42 +0.063
–0.064
0.40 ± 0.06
0.114
0.14 +– 0.038
0° – 8°
1.27
0.289
0.60 +– 0.194
0.10
0.25 M
*Dimension including the plating thickness
Base material dimension
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
FP-8DB
—
—
0.08 g
17
HN58X2402SI/HN58X2404SI
HN58X2402STI/HN58X2404STI (TTP-8DA)
Unit: mm
4.40
3.00
3.30 Max
8
5
1
4
0.65
1.00
0.13 M
6.40 ± 0.20
0.10
*Dimension including the plating thickness
Base material dimension
18
*0.17 ± 0.05
0.15 ± 0.04
1.10 Max
0.805 Max
0.07 +0.03
–0.04
*0.22 +0.08
–0.07
0.20 ± 0.06
0° – 8° 0.50 ± 0.10
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TTP-8DA
—
—
0.034 g
HN58X2402SI/HN58X2404SI
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Copyright © Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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