Intersil HS-117RH Radiation hardened adjustable positive voltage regulator Datasheet

HS-117RH
®
Data Sheet
October 2003
Radiation Hardened
Adjustable Positive Voltage Regulator
Features
• Electrically Screened to DSSC SMD # 5962-99547
The Radiation Hardened HS-117RH is an adjustable
positive voltage linear regulator capable of operating with
input voltages up to 40VDC. The output voltage is adjustable
from 1.2V to 37V with two external resistors. The device is
capable of sourcing from 5mA to 1.25APEAK (0.5 APEAK for
the TO-39 package). Protection is provided by the on-chip
thermal shutdown and output current limiting circuitry.
The Intersil HS-117RH has advantages over other industry
standard types, in that circuitry is incorporated to minimize
the effects of radiation and temperature on device stability.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) process, the HS-117RH is immune to
single event latch-up and has been specifically designed to
provide highly reliable performance in harsh radiation
environments.
Specifications for Rad Hard QML devices are controlled by the
Defense Supply Center in Columbus (DSCC). The SMD numbers
listed here must be used when ordering.
Detailed electrical specifications for the HS-117RH are
contained in SMD 5962-99547. A “hot-link” is provided on
our website for downloading.
Pinouts
HS2-117RH (TO-39 CAN)
BOTTOM VIEW
ADJUST
2
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- 300 krad (Si) (Max)
- Latch-up Immune
• Superior Temperature Stability
• Overcurrent and Overtemperature Protection
Applications
• Adjustable Linear Voltage Regulators
• Adjustable Linear Current Regulators
Ordering Information
ORDERING
NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(oC)
5962F9954701VUC
HS2-117RH-Q
-55 to 125
5962F9954701QUC
HS2-117RH-8
-55 to 125
5962F9954701VXC
HS9S-117RH-Q
-55 to 125
5962F9954701QXC
HS9S-117RH-8
-55 to 125
5962F9954701VYC
HSYE-117RH-Q
-55 to 125
5962F9954701QYC
HSYE-117RH-8
-55 to 125
HS2-117RH/Proto
HS2-117RH/Proto
-55 to 125
HS9S-117RH/Proto
HS9S-117RH/Proto
-55 to 125
HSYE-117RH/Proto
HSYE-117RH/Proto
-55 to 125
HSYE-117RH (SMD.5 CLCC)
BOTTOM VIEW
3 OUT
IN 1
FN4560.7
2
1 - ADJUST
2 - IN
3 - OUT
3
HS9S-117RH (TO-257AA FLANGE MOUNT)
TOP VIEW
1
3
IN
2
OUT
1
ADJUST
1
NOTE: No current JEDEC outline for the SMD.5 package. Refer to
SMD for package dimensions. The TO-257 is a totally isolated metal
package.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright © Intersil Americas Inc. 2003. All Rights Reserved.
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HS-117RH
Die Characteristics
Substrate
Radiation Hardened Silicon Gate,
Dielectric Isolation
DIE DIMENSIONS
2616µm x 2794µm (103 mils x 110 mils)
483µm ±25.4µm (19 mils ±1 mil)
Backside Finish
Gold
INTERFACE MATERIALS
ASSEMBLY RELATED INFORMATION
Glassivation
Substrate Potential
Type: Silox (SiO2)
Thickness: 8.0kÅ ±1.0kÅ
Unbiased (DI)
Top Metallization
ADDITIONAL INFORMATION
Type: AlSiCu
Thickness: 16.0kÅ ±2kÅ
Worst Case Current Density
<2.0 x 105 A/cm2
Transistor Count
95
Metallization Mask Layout
HS-117RH
VIN
VIN
VOUT
VOUT
ADJ
VOUTK
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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