HSMBJSAC5.0 thru HSMBJSAC75 Transient Voltage Suppressor Breakdown Voltage 5.0 to 75 Volts Peak Pulse Power 500 Watts Features CASE: SMB (DO214AA) Breakdown Voltages (VBR) from 5.0 to 75V 500W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01% Low capacitance Fast Response Time Excellent clamping capability High temperature soldering guaranteed: 265℃ /10 seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg) tension 效 无 Application Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICS, MOSFE, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication 印 打 Mechanical Data Dimensions in inches and (millimeters) Case: Void-free transfer molded thermosetting epoxy body meeting UL94V-O Terminals: Tin-Lead or ROHS Compliant annealed matte-Tin plating readily solderable per MIL-STD-750, Method 2026 Marking: Body marked with part number Polarity: Cathode indicated by band Weight: 0.093g（Approximately） Maximum Ratings and Electrical Characteristics @ Symbol Value Unit 500 W SEE TABLE1 A Steady state power dissipation at TL=75℃ ,Lead lengths 0.375”(10mm) 2.5 W Maximum instantaneous forward voltage at 30A 3.5 V -65 to +150 ℃ Conditions PPPM Peak pulse power capability with a 10/1000μs IPPM Peak pulse current with a 10/1000μs PM(AV) VF TJ, TSTG 25OC unless otherwise specified Operating and Storage Temperature Document Number: HSMBJSAC5.0 thru HSMBJSAC75 Feb.29, 2012 1 www.smsemi.com HSMBJSAC5.0 thru HSMBJSAC75 Electrical Characteristics @ 25°C (Unless Otherwise Noted) TABLE1 Microsemi Part Number HSMBJSAC5.0 HSMBJSAC6.0 HSMBJSAC7.0 HSMBJSAC8.0 HSMBJSAC8.5 HSMBJSAC10 HSMBJSAC12 HSMBJSAC15 HSMBJSAC18 HSMBJSAC22 HSMBJSAC26 HSMBJSAC36 HSMBJSAC45 HSMBJSAC50 HSMBJSAC75 Reverse Breakdown Stand Voltage Off VBR @ IBR Voltage 1.0mA (Note1) Maximum Standby current ID @ VWM Maximum Peak Pulse Current Maximum Clamping Voltage VC @ IPP=5.0A (Note2) Maximum Capacitance @ 0 Volts pF Working Inverse Blocking Voltage Inverse Blocking Leakage Current @ VWIB Peak Inverse Blocking Voltage VWM(V) VBR(V) ID(µA) IPP (A) VC(V) C (pF) VWIB(V) IIB(μA) VPIB(V) 5.0 6.0 7.0 8.0 7.5 10.0 12.0 15.0 18.0 22.0 26.0 36.0 45.0 50.0 75.0 7.60 7.90 8.33 8.89 9.44 11.1 13.3 16.7 20.0 24.4 28.9 40.0 50.0 55.5 83.3 300 300 300 100 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 44.0 41.0 38.0 36.0 34.0 29.0 25.0 20.0 15.0 14.0 11.1 8.6 6.8 5.8 4.1 10.0 11.2 12.6 13.4 14.0 16.3 19.0 23.6 28.8 35.4 42.3 60.0 77.0 88.0 121.0 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 75 75 75 75 75 75 75 75 75 75 75 75 150 150 150 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 100 100 100 100 100 100 100 100 100 100 100 100 200 200 200 效 无 印 Note1: A transient voltage suppressor is normally selected according to voltage (VWM), which should be equal to or greater than the dc or continuous peak operating voltage level. Note2: Test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein. PPP - Peak Pulse Power (kW) 100 打 10 tW IPP tW Half Sine tW=0.71p tp Square Wave tW Current Waveforms 1.0 0.1 0.1 1.0 10 102 tw-Pulse Width (µs) 150 Impulse Exponential Decay 1.0 IPP 0.5 103 104 Fig. 1 Peak Pulse Power vs. Pulse Time Document Number: HSMBJSAC5.0 thru HSMBJSAC75 Feb.29, 2012 2 IPP - Peak Pulse Current - % IPP Characteristic Curve tr=10µs Peak Value IPP 100 Half Value IPP 2 10/1000µs Waveform as defined by R.E.A. 50 0 0 1.0 2.0 3.0 t-Time (ms) Fig.2 Pulse Waveform for Exponential Surge www.smsemi.com HSMBJSAC5.0 thru HSMBJSAC75 PPP-Peak Pulse Power or continuous Average Power in Percent of 25 ℃ (%) 100 80 Peak Pulse Power (Single Pulse). 60 40 20 Average Power 0 0 50 100 150 Lead or Ambient Temperature (℃) 200 效 无 印 Fig.3 Derating Curve Schematic Applications The TVS low capacitance device configuration is shown in Fig.4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the sane polarity direction as the TVS as shown in Fig.5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. If using two (2) low capacitance TVS devices in also provided. The unidirectional and bidirectional configurations in Fig.5 and 6 will both in twice the capacitance of Fig.4 + TVS 打 DIODE Fig.4 TVS with internal Low Capacitance Diode IN Fig.5 Optional Unidirectional configuration (TVS and separate rectifier diode in parallel) Document Number: HSMBJSAC5.0 thru HSMBJSAC75 Feb.29, 2012 3 OUT + Fig.6 Optional Bidirectional configuration (two TVS and devices in anti-parallel) www.smsemi.com