Holtek HT23C512 Cmos 64kx8-bit mask rom Datasheet

HT23C512
CMOS 64K´8-Bit Mask ROM
Features
· Operating voltage: 2.7V~5.5V
· 65536´8-bit of mask ROM
· Low power consumption
· Mask options: chip enable CE/CE/OE1/OE1 and
- Operation: 25mA max. (VCC=5V)
output enable OE/OE/NC
· TTL compatible inputs and outputs
10mA max. (VCC=3V)
- Standby: 30mA max. (VCC=5V)
10mA max. (VCC=3V)
· Access time: 150ns max. (VCC=5V)
250ns max. (VCC=3V)
· Tristate outputs
· Fully static operation
· 28-pin DIP/SOP package
General Description
tion in multiple bus microprocessor systems. An additional feature of the HT23C512 is its ability to enter the
standby mode whenever the chip enable (CE/CE) is inactive, thus reducing current consumption to below
30mA. The combination of these functions makes the
chip suitable for high density low power memory applications.
The HT23C512 is a read-only memory with high performance CMOS storage device whose 512K of memory is
arranged into 65536 words by 8 bits.
For application flexibility, the chip enable and output enable control pins can be selected as active high or active
low. This flexibility not only allows easy interface with
most microprocessors, but also eliminates bus conten-
Block Diagram
X -D e c
A 0
M e m o ry
C e ll
( 6 4 K 8 B its )
Y -D e c
A d d re s s
B u ffe rs
X Y -P re D e c
A 1 5
C E /C E /O E 1 /O E 1
O E /O E /N C
Z -D e c
S e n s e A m p
C o n tro l
L o g ic
O u tp u t B u ffe rs
V S S
Rev. 1.10
V C C
1
D 0
D 7
August 30, 2002
HT23C512
Pin Assignment
A 1 5
1
2 8
V C C
A 1 2
2
2 7
A 1 4
A 7
3
2 6
A 1 3
A 6
4
2 5
A 8
A 5
5
2 4
A 9
A 4
6
2 3
A 1 1
A 3
7
2 2
O E /O E /N C
A 2
8
2 1
A 1 0
A 1
9
2 0
C E /C E /O E 1 /O E 1
A 0
1 0
1 9
D 7
D 0
1 1
1 8
D 6
D 1
1 2
1 7
D 5
D 2
1 3
1 6
D 4
V S S
1 4
1 5
D 3
H T 2 3 C 5 1 2
2 8 D IP -A /S O P -A
Pin Description
Pin Name
I/O
Description
A0~A15
I
Address inputs
D0~D7
O
Data outputs
CE/CE/OE1/OE1
I
Chip enable/Output enable input
OE/OE/NC
I
Output enable input
VSS
¾
Negative power supply, ground
VCC
¾
Positive power supply
Absolute Maximum Ratings
Supply Voltage ............................................-0.3V to 6V
Storage Temperature ............................-50°C to 125°C
Input Voltage....................................-0.3V to VCC+0.3V
Operating Temperature...........................-40°C to 85°C
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
D.C. Characteristics
Supply voltage: 2.7V~3.6V
Symbol
Parameter
Ta=-40°C to 85°C
Test Conditions
VCC
Conditions
¾
Min.
Typ.
Max.
Unit
2.7
¾
3.6
V
¾
¾
10
mA
VCC
Operating Voltage
¾
ICC
Operating Current
3V
VIL
Input Low Voltage
3V
¾
VSS
¾
0.4
V
VIH
Input High Voltage
3V
¾
2.0
¾
VCC
V
VOL
Output Low Voltage
3V
IOL=2.1mA
¾
¾
0.4
V
VOH
Output High Voltage
3V
IOH=-0.4mA
2.4
¾
VCC
V
Rev. 1.10
O/P Unload, f=5MHz
2
August 30, 2002
HT23C512
Symbol
Parameter
Test Conditions
Conditions
VCC
Min.
Typ.
Max.
Unit
ILI
Input Leakage Current
3V
VIN=0 to VCC
¾
¾
10
mA
ILO
Output Leakage Current
3V
VOUT=0 to VCC
¾
¾
10
mA
ISTB1
Standby Current
3V
CE=VIL, CE=VIH
¾
¾
500
mA
ISTB2
Standby Current
3V
CE £ 0.2V, CE ³ VCC-0.2V
¾
¾
10
mA
CIN
Input Capacitance (See Note)
¾
f=1MHz
¾
¾
10
pF
COUT
Output Capacitance (See Note)
¾
f=1MHz
¾
¾
10
pF
Note: These parameters are periodically sampled but not 100% tested.
Supply voltage: 4.5V~5.5V
Symbol
Parameter
Ta=-40°C to 85°C
Test Conditions
VCC
Conditions
¾
Min.
Typ.
Max.
Unit
4.5
¾
5.5
V
¾
¾
25
mA
VCC
Operating Voltage
¾
ICC
Operating Current
5V
VIL
Input Low Voltage
5V
¾
VSS
¾
0.8
V
VIH
Input High Voltage
5V
¾
2.2
¾
VCC
V
VOL
Output Low Voltage
5V
IOL=3.2mA
¾
¾
0.4
V
VOH
Output High Voltage
5V
IOH=-1mA
2.4
¾
VCC
V
ILI
Input Leakage Current
5V
VIN=0 to VCC
¾
¾
10
mA
ILO
Output Leakage Current
5V
VOUT=0 to VCC
¾
¾
10
mA
ISTB1
Standby Current
5V
CE=VIL, CE=VIH
¾
¾
1.5
mA
ISTB2
Standby Current
5V
CE £ 0.2V, CE ³ VCC-0.2V
¾
¾
30
mA
CIN
Input Capacitance (See Note)
¾
f=1MHz
¾
¾
10
pF
COUT
Output Capacitance (See Note)
¾
f=1MHz
¾
¾
10
pF
O/P Unload, f=5MHz
Note: These parameters are periodically sampled but not 100% tested.
A.C. Characteristics
Symbol
Parameter
Ta=-40°C to 85°C
VCC=2.7V~3.6V
VCC=4.5V~5.5V
Unit
Min.
Max.
Min.
Max.
250
¾
150
¾
ns
tCYC
Cycle Time
tAA
Address Access Time
¾
250
¾
150
ns
tACE
Chip Enable Access Time
¾
250
¾
150
ns
tAOE
Output Enable Access Time
¾
150
¾
80
ns
tOH
Output Hold Time
¾
¾
10
¾
ns
tOD
Output Disable Time (See Note)
¾
¾
¾
70
ns
tOE
Output Enable Time (See Note)
¾
¾
10
¾
ns
Note: These parameters are periodically sampled but not 100% tested.
Rev. 1.10
3
August 30, 2002
HT23C512
A.C. test conditions
V
C C
Output load: see figure right
1 2 5 0 9
Input rise and fall time: 10ns
O u tp u t
Input pulse levels: 0.4V to 2.4V
7 7 5 9
Input and output timing reference levels:
0.8V and 2.0V (VCC=5V), 1.5V (VCC=3V)
1 0 0 p F *
* In c lu d in g s c o p e a n d jig
Output load circuit
Functional Description
The HT23C512 has two modes, namely data read mode
and standby mode, controlled by CE/CE/OE1/OE1 and
OE/OE/NC inputs.
· Data read mode
When both the chip enable (CE/CE/OE1/OE1) and
the output enable (OE/OE/NC) are active, the chip is
in data read mode. Otherwise, active CE/CE and inactive OE/OE/NC result in deselect mode. The output
will remain in Hi-Z state.
· Standby mode
The HT23C512 has lower current consumption, controlled by the chip enable input (CE/CE). When a
low/high level is applied to the CE/CE input regardless of
the output enable (OE/OE/NC) states, the chip will enter
the standby mode.
Operation Truth Table
Mode
CE/CE
OE/OE
A0~A15
D0~D7
Read
H/L
H/L
Valid
Deselect
H/L
L/H
X
High Z
Standby
L/H
X
X
High Z
Data Out
Note: H=VIH, L=VIL, X=VIH or VIL
Timing Diagrams
· Propagation delay due to address (CE/CE/OE1/OE1 and OE/OE are active)
tC
Y C
V a lid
A d d re s s
tA
tO
A
H
V a lid
D o u t
· Propagation delay due to chip enable and output enable (address valid)
tA
C E
C E
C E
tA
O E
C E
O E
tO
tO
E
D o u t
Rev. 1.10
D
V a lid
4
August 30, 2002
HT23C512
Characteristic Curves
1 .4
1 .5
C
1 .1
0 .9
0 .7
0 .5
5
C
1 .2
1 .1
1
0 .9
0 .8
C C
(V )
V
C C
1 .3
T B 2
1 .3
1 .1
0 .9
0 .7
5
T a = 2 5
C
C C
(V )
V
C C
5 0
7 5
5 0
7 5
1
0 .9
-5 0
-2 5
0
2 5
T e m p e ra tu re ( C )
A
1 .1 5
A c c e s s T im e tA
(N o r m a liz e d )
A
A c c e s s T im e tA
(N o r m a liz e d )
Rev. 1.10
7 5
1 .2 5
1 .0 5
1
0 .9 5
C
5 0
1 .1
= 5 V
1 .1
0 .9
2 5
1 .2
0 .8
5 .5
O p e r a tin g V o lta g e V
0
T e m p e ra tu re ( C )
1 .4
4 .5
-2 5
= 5 V
1 .5
0 .5
T a = 2 5
-5 0
5 .5
S ta n d b y C u r r e n t IS
(N o r m a liz e d )
T B 2
S ta n d b y C u r r e n t IS
(N o r m a liz e d )
4 .5
O p e r a tin g V o lta g e V
T a = 2 5
1 .3
O p e r a tin g C u r r e n t IC
(N o r m a liz e d )
(N o r m a liz e d )
O p e r a tin g C u r r e n t IC
C
1 .3
4 .5
5
O p e r a tin g V o lta g e V
0 .9 5
0 .8 5
0 .7 5
5 .5
C C
1 .0 5
(V )
V
5
C C
= 5 V
-5 0
-2 5
0
2 5
T e m p e ra tu re ( C )
August 30, 2002
HT23C512
1 .2 5
1
0 .9 5
0 .9
4 .5
5
C
C C
(V )
V
C C
Rev. 1.10
-5 0
-2 5
0
2 5
5 0
7 5
5 0
7 5
T e m p e ra tu re ( C )
1 .1 5
A c c e s s T im e tA O
(N o r m a liz e d )
E
1 .0 5
1
0 .9 5
C
0 .8 5
1 .2 5
E
A c c e s s T im e tA O
(N o r m a liz e d )
T a = 2 5
0 .9 5
= 5 V
1 .1
0 .9
1 .0 5
0 .7 5
5 .5
O p e r a tin g V o lta g e V
T a = 2 5
1 .1 5
E
1 .0 5
A c c e s s T im e tA C
(N o r m a liz e d )
A c c e s s T im e tA C
(N o r m a liz e d )
E
1 .1
4 .5
5
O p e r a tin g V o lta g e V
0 .9 5
0 .8 5
0 .7 5
5 .5
C C
1 .0 5
(V )
V
6
C C
= 5 V
-5 0
-2 5
0
2 5
T e m p e ra tu re ( C )
August 30, 2002
HT23C512
HT23C512 MASK ROM ORDERING SHEET
Custom:
Input Medium:
EPROM
DISK
File (Mail Address: [email protected])
User No.
Type/Ref. Name
Q'ty
OTHER
Check Sum
Memory Address
Start
End
Control Pin and Package Form Option:
(a) 28 Pin Type Pin 20:
(1) CE (2) CE (3) OE1 (4) OE1
Pin 22:
(1) OE (2) OE (3) NC
(b) Package Form:
(1) Chip Form (2) 28 DIP (3) 28 SOP
Companion User No.
Package Marking :
Delivery Date
:
Q'ty:
CUSTOM CONFIRMED BY:
(NAME, DATE, POSITION & CO. CHOP)
HOLTEK CONFIRMED BY:
(SALES)
Rev. 1.10
(SALES MANAGER)
7
August 30, 2002
HT23C512
Package Information
28-pin DIP (600mil) outline dimensions
A
1 5
2 8
B
1
1 4
H
C
D
E
Symbol
Rev. 1.10
F
=
G
I
Dimensions in mil
Min.
Nom.
Max.
A
1445
¾
1465
B
535
¾
555
C
145
¾
155
D
125
¾
145
E
16
¾
20
F
50
¾
70
G
¾
100
¾
H
595
¾
615
I
635
¾
670
a
0°
¾
15°
8
August 30, 2002
HT23C512
28-pin SOP (300mil) outline dimensions
2 8
1 5
A
B
1
1 4
C
C '
G
H
D
E
Symbol
Rev. 1.10
=
F
Dimensions in mil
Min.
Nom.
Max.
A
394
¾
419
B
290
¾
300
C
14
¾
20
C¢
697
¾
713
D
92
¾
104
E
¾
50
¾
F
4
¾
¾
G
32
¾
38
H
4
¾
12
a
0°
¾
10°
9
August 30, 2002
HT23C512
Product Tape and Reel Specifications
Reel dimensions
D
T 2
A
C
B
T 1
SOP 28W (300mil)
Symbol
Description
Dimensions in mm
A
Reel Outer Diameter
330±1.0
B
Reel Inner Diameter
62±1.5
C
Spindle Hole Diameter
13.0+0.5
-0.2
D
Key Slit Width
2.0±0.5
T1
Space Between Flange
24.8+0.3
-0.2
T2
Reel Thickness
30.2±0.2
Rev. 1.10
10
August 30, 2002
HT23C512
Carrier tape dimensions
P 0
D
P 1
t
E
F
W
C
D 1
B 0
P
K 0
A 0
SOP 28W (300mil)
Symbol
Description
Dimensions in mm
W
Carrier Tape Width
24.0±0.3
P
Cavity Pitch
12.0±0.1
E
Perforation Position
1.75±0.1
F
Cavity to Perforation (Width Direction)
11.5±0.1
D
Perforation Diameter
1.5+0.1
D1
Cavity Hole Diameter
1.5+0.25
P0
Perforation Pitch
4.0±0.1
P1
Cavity to Perforation (Length Direction)
2.0±0.1
A0
Cavity Length
10.85±0.1
B0
Cavity Width
18.34±0.1
K0
Cavity Depth
2.97±0.1
t
Carrier Tape Thickness
0.35±0.01
C
Cover Tape Width
Rev. 1.10
21.3
11
August 30, 2002
HT23C512
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No.3, Creation Rd. II, Science-based Industrial Park, Hsinchu, Taiwan
Tel: 886-3-563-1999
Fax: 886-3-563-1189
http://www.holtek.com.tw
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11F, No.576, Sec.7 Chung Hsiao E. Rd., Taipei, Taiwan
Tel: 886-2-2782-9635
Fax: 886-2-2782-9636
Fax: 886-2-2782-7128 (International sales hotline)
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Tel: 021-6485-5560
Fax: 021-6485-0313
http://www.holtek.com.cn
Holtek Semiconductor (Hong Kong) Ltd.
RM.711, Tower 2, Cheung Sha Wan Plaza, 833 Cheung Sha Wan Rd., Kowloon, Hong Kong
Tel: 852-2-745-8288
Fax: 852-2-742-8657
Holmate Semiconductor, Inc.
48531 Warm Springs Boulevard, Suite 413, Fremont, CA 94539
Tel: 510-252-9880
Fax: 510-252-9885
http://www.holmate.com
Copyright Ó 2002 by HOLTEK SEMICONDUCTOR INC.
The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used
solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable
without further modification, nor recommends the use of its products for application that may present a risk to human life
due to malfunction or otherwise. Holtek reserves the right to alter its products without prior notification. For the most
up-to-date information, please visit our web site at http://www.holtek.com.tw.
Rev. 1.10
12
August 30, 2002
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