HY HY4N65T 650v / 4a n-channel enhancement mode mosfet Datasheet

HY4N65T / HY4N65FT
650V / 4A
N-Channel Enhancement Mode MOSFET
650V, RDS(ON)=2.8W@VGS=10V, ID=2A
Features
TO-220AB
ITO-220AB
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low CRSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1
1
2
Mechanical Information
3
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Marking & Ordering Information
2
3
2
Drain
3
Source
1
TYPE
MARKING
PACKAGE
PACKING
HY4N65T
4N65T
TO-220AB
50PCS/TUBE
HY4N65FT
4N65FT
ITO-220AB
50PCS/TUBE
Gate
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Symbol
HY4N65T
HY4N65FT
Units
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
+30
V
Continuous Drain Current
TC=25℃
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TC=25℃
Avalanche Energy with Single Pulse
IAS=4A, VDD=150V, L=22.5mH
Operating Junction and Storage Temperature Range
ID
4
4
A
IDM
16
16
A
PD
71
0.57
26
0.21
W
EAS
180
mJ
TJ, TSTG
-55 to +150
℃
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Symbol
HY4N65T
HY4N65FT
Units
Junction-to-Case Thermal Resistance
RqJC
1.76
4.8
℃/W
Junction-to-Case Thermal Resistance
RqJA
50
110
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV 1.0, 20-Sept-2012
PAGE.1
HY4N65T / HY4N65FT
Electrical Characteristics ( TC=25℃, Unless otherwise noted )
Paramter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
BVDSS
VGS=0V、ID=250uA
650
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS、ID=250uA
2.0
-
4.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V、ID=2A
-
2.5
2.8
W
Zero Gate Voltage Drain Current
IDSS
VDS=650V、VGS=0V
-
-
10
uA
Gate Body Leakage Current
IGSS
VGS=+30V、VDS=0V
-
-
+100
nA
-
16.2
20
-
3.2
-
Static
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
5.6
-
Turn-On Delay Time
td(on)
-
16.8
22
-
36
46
-
21.8
32
-
19.2
28
-
480
-
-
65
-
-
1.3
-
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=520V,ID=4A
VGS=10V
VDD=325V,ID=4A
VGS=10V,RG=25W
VDS=25V,VGS=0V
f=1.0MHZ
nC
ns
pF
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
-
-
4.0
A
Max. Pulsed Source Current
ISM
-
-
-
16.0
A
Diode Forward Voltage
VSD
IS=4A、VGS=0V
-
-
1.4
V
Reverse Recovery Time
trr
-
210
-
ns
Reverse Recovery Charge
Qrr
VGS=0V、IS=4A
di/dt=100A/us
-
0.8
-
uC
NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%
REV 1.0, 20-Sept-2012
PAGE.2
HY4N65T / HY4N65FT
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
10
6
ID - Drain Source Current (A)
ID - Drain-to-Source Current (A)
7
VGS= 20V~ 8.0V
7.0V
5
4
6.0V
3
2
5.0V
1
0
VDS =50V
1
25oC
TJ = 125oC
-55oC
0.1
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
50
1
Fig.1 Output Characteristric
9
12
RDS(ON) - On Resistance(W)
6
4
VGS=10V
2
VGS = 20V
ID =2.0A
10
8
6
4
2
0
0
0
2
4
6
4
8
5
ID - Drain Current (A)
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
1000
12
f = 1MHz
VGS = 0V
800
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
8
RDS(ON) - On Resistance(W)
2
600
Ciss
400
200
Coss
Crss
0
ID =4.0A
VDS=520V
10
VDS=325V
8
VDS=130V
6
4
2
0
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV 1.0, 20-Sept-2012
30
0
2
4
6
8
10
12
14
16
Qg - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
PAGE.3
18
HY4N65T / HY4N65FT
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
1.2
VGS =10 V
ID =2.0A
BVDSS - Breakdown Voltage
(Normalized)
RDS(ON) - On-Resistance
(Normalized)
2.5
2
1.5
1
0.5
ID = 250mA
1.1
1
0.9
0.8
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (oC)
TJ - Junction Temperature (oC)
Fig.7 On-Resistance vs Junction Temperature
Fig.8 Breakdown Voltage vs Junction Temperature
100
IS - Source Current (A)
VGS = 0V
10
TJ = 125oC
25oC
1
-55oC
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
1.4
Fig.9 Body Diode Forward Voltage Characteristic
REV 1.0, 20-Sept-2012
PAGE.4
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