Infineon HYB18T512400AF-37 512-mbit double-data-rate-two sdram Datasheet

D a t a S h e e t , Rev. 1.13, M a i 2 00 4
HYB18T512[400/800/160]AC–[3.7/5]
HYB18T512[400/800/160]AF–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
DDR2 SDRAM
M e m or y P r o du c t s
N e v e r
s t o p
t h i n k i n g .
The information in this document is subject to change without notice.
Edition 2004-05
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
D a t a S h e e t , Rev. 1.13, M a i 2 00 4
HYB18T512[400/800/160]AC–[3.7/5]
HYB18T512[400/800/160]AF–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
DDR2 SDRAM
M e m or y P r o du c t s
N e v e r
s t o p
t h i n k i n g .
HYB18T512[400/800/160]A[C/F]–[3.7/5]
Revision History:
Rev. 1.13
Page
Subjects (major changes since last revision)
all
initial release
2004-05
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Page
Table of Contents
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
512Mbit DDR2 Addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Input/Output Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Block Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2
2.1
2.2
2.2.1
2.2.2
2.2.2.1
2.2.3
2.2.4
2.2.5
2.3
2.4
2.5
2.6
2.6.1
2.6.2
2.6.3
2.6.4
2.6.5
2.6.6
2.7
2.7.1
2.7.2
2.8
2.8.1
2.8.2
2.8.3
2.8.4
2.9
2.9.1
2.9.2
2.10
2.11
2.11.1
2.11.2
2.12
2.13
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Simplified State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Basic Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power On and Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Programming the Mode Register and Extended Mode Registers . . . . . . . . . . . . . . . . . . . . . . . . . .
DDR2 SDRAM Mode Register Set (MRS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DDR2 SDRAM Extended Mode Register Set (EMRS(1)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EMRS(2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EMRS(3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Off-Chip Driver (OCD) Impedance Adjustment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
On-Die Termination (ODT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bank Activate Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Read and Write Commands and Access Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Posted CAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Burst Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Read Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Write Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Write Data Mask . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Burst Interruption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Precharge Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Read Operation Followed by a Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Write followed by Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Auto-Precharge Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Read with Auto-Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Write with Auto-Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Read or Write to Precharge Command Spacing Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Concurrent Auto-Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Auto-Refresh Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Self-Refresh Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Other Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
No Operation Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Deselect Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Clock Frequency Change . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Asynchronous CKE Low Reset Event . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
4
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
5
5.1
5.2
5.3
5.4
5.4.1
5.5
5.6
AC & DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC & AC Logic Input Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Default Output V-I Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Calibrated Output Driver V-I Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input / Output Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power & Ground Clamp V-I Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Data Sheet
5
21
21
22
22
23
23
25
27
27
28
31
35
36
37
38
39
42
45
46
48
48
51
52
52
55
56
57
57
57
58
59
63
63
63
63
64
68
68
69
71
72
74
75
76
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Page
Table of Contents
6
6.1
6.2
IDD Specifications and Conditions
7
Electrical Characteristics & AC Timing - Absolute Specification . . . . . . . . . . . . . . . . . . . . . . . . 80
8
8.1
8.2
8.2.1
8.2.2
8.2.3
8.3
8.3.1
8.3.2
8.3.3
8.4
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating . . . . . . . . . . . . . . . .
Reference Load for Timing Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Slewrate Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Slewrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Slewrate - Differential signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Slewrate - Single ended signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input and Data Setup and Hold Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Timing Definition for Input Setup (tIS) and Hold Time (tIH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Timing Definition for Data Setup (tDS) and Hold Time (tDH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Slew Rate Definition for Input and Data Setup and Hold Times . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overshoot and Undershoot Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
10
DDR2 Component Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
IDD Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
On Die Termination (ODT) Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Data Sheet
6
83
83
83
83
83
83
84
84
84
85
91
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
1
Overview
This chapter gives an overview of the 512-Mbit Double-Data-Rate-Two SDRAM product family and describes its
main characteristics.
1.1
Features
The 512-Mbit Double-Data-Rate-Two SDRAM offers the following key features:
•
•
•
•
•
•
•
•
•
1.8 V ± 0.1 V Power Supply
1.8 V ± 0.1 V (SSTL_18) compatible I/O
DRAM organisations with 4, 8 and 16 data
in/outputs
Double Data Rate architecture: two data transfers
per clock cycle, four internal banks for concurrent
operation
CAS Latency: 3, 4 and 5
Burst Length: 4 and 8
Differential clock inputs (CK and CK)
Bi-directional, differential data strobes (DQS and
DQS) are transmitted / received with data. Edge
aligned with read data and center-aligned with write
data.
DLL aligns DQ and DQS transitions with clock
DQS can be disabled for single-ended data strobe
operation
Table 1
•
•
Commands entered on each positive clock edge,
data and data mask are referenced to both edges of
DQS
Data masks (DM) for write data
Posted CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver impedance adjustment (OCD) and
On-Die-Termination (ODT) for better signal quality.
Auto-Precharge operation for read and write bursts
Auto-Refresh, Self-Refresh and power saving
Power-Down modes
Average Refresh Period 7.8 µs at a TCASE lower
than 85 °C, 3.9 µs between 85 °C and 95 °C
Normal and Weak Strength Data-Output Drivers
•
1K page size for ×4 & ×8, 2K page size for ×16
•
Packages:
P-TFBGA-60-6 for ×4 & ×8 components
P-TFBGA-84-1 for ×16 components
•
•
•
•
•
•
High Performance
Product Type Speed Code
–3.7
–5
Units
Speed Grade
DDR2–533 4–4–4
DDR2–400 3–3–3
—
266
200
MHz
266
200
MHz
200
200
MHz
15
15
ns
15
15
ns
45
40
ns
60
55
ns
max. Clock Frequency
@CL5
@CL4
@CL3
min. RAS-CAS-Delay
min. Row Precharge Time
min. Row Active Time
min. Row Cycle Time
1.2
fCK5
fCK4
fCK3
tRCD
tRP
tRAS
tRC
Description
1.
2.
3.
4.
5.
The 512-Mb DDR2 DRAM is a high-speed DoubleData-Rate-2 CMOS Synchronous DRAM device
containing 536,870,912 bits and internally configured
as a quad-bank DRAM. The 512-Mb device is
organized as either 32 Mbit × 4 I/O × 4 bank, 16 Mbit ×
8 I/O × 4 bank or 8 Mbit × 16 I/O × 4 bank chip. These
synchronous devices achieve high speed transfer rates
starting at 400 Mb/sec/pin for general applications. See
Table 1 for performance figures.
All of the control and address inputs are synchronized
with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential
clocks (CK rising and CK falling). All I/Os are
synchronized with a single ended DQS or differential
DQS-DQS pair in a source synchronous fashion.
The device is designed to comply with all DDR2 DRAM
key features:
Data Sheet
posted CAS with additive latency,
write latency = read latency - 1,
normal and weak strength data-output driver,
Off-Chip Driver (OCD) impedance adjustment and
an On-Die Termination (ODT) function.
7
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
A 16-bit address bus for ×4 and ×8 organised
components and a 15-bit address bus for ×16
components is used to convey row, column and bank
address information in a RAS-CAS multiplexing style.
provided along with various power-saving power-down
modes.
The functionality described and the timing
specifications included in this data sheet are for the
DLL Enabled mode of operation.
The DDR2 device operates with a 1.8 V ± 0.1 V power
supply. An Auto-Refresh and Self-Refresh mode is
1.3
Ordering Information
Table 2
Ordering information
Part Number
Org. Speed
HYB18T512400AC–5
x4
HYB18T512800AC–5
x8
HYB18T512160AC–5
x16
HYB18T512400AC–3.7
x4
HYB18T512800AC–3.7
x8
HYB18T512160AC–3.7
x16
HYB18T512400AF–5
x4
HYB18T512800AF–5
x8
HYB18T512160AF–5
x16
HYB18T512400AF–3.7
x4
HYB18T512800AF–3.7
x8
HYB18T512160AF–3.7
x16
The DDR2 SDRAM is available in P-TFBGA package.
CAS-RCD-RP Clock
(MHz)
Latencies
DDR2–400 3–3–3
200
CAS-RCD-RP Clock
(MHz)
Latencies
Package
—
P-TFBGA-60-6
—
P-TFBGA-84-1
DDR2–533 4–4–4
266
3–3–3
200
P-TFBGA-60-6
P-TFBGA-84-1
DDR2–400 3–3–3
200
—
—
P-TFBGA-60-6
P-TFBGA-84-1
DDR2–533 4–4–4
266
3–3–3
200
P-TFBGA-60-6
P-TFBGA-84-1
Note: For product nomenclature see Chapter 10 of this data sheet
Data Sheet
8
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
1.4
Pin Configuration
The pin configuration of a DDR2 SDRAM is listed by function in Table 3. The abbreviations used in the Pin#/Buffer
Type columns are explained in Table 4 and Table 5 respectively. The pin numbering for the FBGA package is
depicted in Figure 1 for ×4, Figure 2 for ×8 and Figure 3 for ×16.
Table 3
Ball#/Pin#
Pin Configuration of DDR SDRAM
Name
Pin
Type
Buffer
Type
Function
Clock Signals ×4/×8 organizations
E8
CK
F8
CK
F2
CKE
I
SSTL
Clock Signal
I
SSTL
Complementary Clock Signal
I
SSTL
Clock Enable Rank
Clock Signals ×16 organization
J8
CK
I
SSTL
Clock Signal
K8
CK
I
SSTL
Complementary Clock Signal
K2
CKE
I
SSTL
Clock Enable Rank
Control Signals ×4/×8 organizations
F7
RAS
I
SSTL
Row Address Strobe
G7
CAS
I
SSTL
Column Address Strobe
F3
WE
I
SSTL
Write Enable
G8
CS
I
SSTL
Chip Select
Control Signals ×16 organization
K7
RAS
I
SSTL
Row Address Strobe
L7
CAS
I
SSTL
Column Address Strobe
K3
WE
I
SSTL
Write Enable
L8
CS
I
SSTL
Chip Select
Address Signals ×4/×8 organizations
G2
BA0
I
SSTL
G3
BA1
I
SSTL
H8
A0
I
SSTL
H3
A1
I
SSTL
H7
A2
I
SSTL
J2
A3
I
SSTL
J8
A4
I
SSTL
J3
A5
I
SSTL
J7
A6
I
SSTL
K2
A7
I
SSTL
K8
A8
I
SSTL
K3
A9
I
SSTL
H2
A10
I
SSTL
AP
I
SSTL
K7
A11
I
SSTL
L2
A12
I
SSTL
L8
A13
I
SSTL
Data Sheet
Bank Address Bus 1:0
Address Signal 12:0
Address Signal 13
9
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
Table 3
Ball#/Pin#
Pin Configuration of DDR SDRAM
Name
Pin
Type
Buffer
Type
Function
Address Signals ×16 organization
L2
BA0
I
SSTL
L3
BA1
I
SSTL
L1
NC
–
–
M8
A0
I
SSTL
M3
A1
I
SSTL
M7
A2
I
SSTL
N2
A3
I
SSTL
N8
A4
I
SSTL
N3
A5
I
SSTL
N7
A6
I
SSTL
P2
A7
I
SSTL
P8
A8
I
SSTL
P3
A9
I
SSTL
M2
A10
I
SSTL
AP
I
SSTL
P7
A11
I
SSTL
R2
A12
I
SSTL
Bank Address Bus 1:0
Address Signal 12:0
Data Signals ×4/×8 organizations
C8
DQ0
I/O
SSTL
Data Signal 0
C2
DQ1
I/O
SSTL
Data Signal 1
D7
DQ2
I/O
SSTL
Data Signal 2
D3
DQ3
I/O
SSTL
Data Signal 3
Data Signals ×8 organization
D1
DQ4
I/O
SSTL
Data Signal 4
D9
DQ5
I/O
SSTL
Data Signal 5
B1
DQ6
I/O
SSTL
Data Signal 6
B9
DQ7
I/O
SSTL
Data Signal 7
Data Signals ×16 organization
G8
DQ0
I/O
SSTL
Data Signal 0
G2
DQ1
I/O
SSTL
Data Signal 1
H7
DQ2
I/O
SSTL
Data Signal 2
H3
DQ3
I/O
SSTL
Data Signal 3
H1
DQ4
I/O
SSTL
Data Signal 4
H9
DQ5
I/O
SSTL
Data Signal 5
F1
DQ6
I/O
SSTL
Data Signal 6
F9
DQ7
I/O
SSTL
Data Signal 7
C8
DQ8
I/O
SSTL
Data Signal 8
C2
DQ9
I/O
SSTL
Data Signal 9
D7
DQ10
I/O
SSTL
Data Signal 10
Data Sheet
10
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
Table 3
Pin Configuration of DDR SDRAM
Ball#/Pin#
Name
Pin
Type
Buffer
Type
Function
D3
DQ11
I/O
SSTL
Data Signal 11
D1
DQ12
I/O
SSTL
Data Signal 12
D9
DQ13
I/O
SSTL
Data Signal 13
B1
DQ14
I/O
SSTL
Data Signal 14
B9
DQ15
I/O
SSTL
Data Signal 15
Data Strobe ×4/×8 organisations
B7
DQS
I/O
SSTL
Data Strobe
A8
DQS
I/O
SSTL
Data Strobe
Data Strobe ×8 organisations
B3
RDQS
I/O
SSTL
Mode Register Select
A2
RDQS
I/O
SSTL
Data Strobe
Data Strobe ×16 organization
B7
UDQS
I/O
SSTL
Data Strobe Upper Byte
A8
UDQS
I/O
SSTL
Data Strobe Upper Byte
F7
LDQS
I/O
SSTL
Data Strobe Lower Byte
E8
LDQS
I/O
SSTL
Data Strobe Lower Byte
SSTL
Data Mask
Data Mask ×4/×8 organizations
B3
DM
I
Data Mask ×16 organization
B3
UDM
I
SSTL
Data Mask Upper Byte
F3
LDM
I
SSTL
Data Mask Lower Byte
Power Supplies ×4/×8/×16 organizations
A9,C1,C3,C7,
C9
VDDQ
PWR
–
I/O Driver Power Supply
A1
VDD
VSSQ
PWR
–
Power Supply
PWR
–
Power Supply
VSS
PWR
–
Power Supply
A7,B2,B8,D2,
D8
A3,E3
Power Supplies ×4/×8 organizations
E2
E1
E9,H9,L1
E7
J1,K9
VREF
VDDL
VDD
VSSDL
VSS
AI
–
I/O Reference Voltage
PWR
–
Power Supply
PWR
–
Power Supply
PWR
–
Power Supply
PWR
–
Power Supply
Power Supplies ×16 organization
J2
E9, G1, G3,
G7, G9
J1
Data Sheet
VREF
VDDQ
AI
–
I/O Reference Voltage
PWR
–
I/O Driver Power Supply
VDDL
PWR
–
Power Supply
11
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
Table 3
Ball#/Pin#
Pin Configuration of DDR SDRAM
Pin
Type
Buffer
Type
Function
E1, J9, M9, R1 VDD
PWR
–
Power Supply
E7, F2, F8, H2, VSSQ
H8
PWR
–
Power Supply
PWR
–
Power Supply
PWR
–
Power Supply
J7
J3,N1,P9
Name
VSSDL
VSS
Not Connected ×4/×8 organizations
L3,L7, G1
NC
NC
–
Not Connected
–
Not Connected
–
Not Connected
–
On-Die Termination Control
–
On-Die Termination Control
Not Connected ×4 organization
A2, B1, B9,
D1, D9
NC
NC
Not Connected ×16 organization
A2, E2, L1, R3, NC
R7, R8
NC
Other Pins ×4/×8 organizations
F9
ODT
–
Other Pins ×16 organization
K9
Table 4
ODT
–
Abbreviations for Pin Type
Abbreviation
Description
I
Standard input-only pin. Digital levels.
O
Output. Digital levels.
I/O
I/O is a bidirectional input/output signal.
AI
Input. Analog levels.
PWR
Power
GND
Ground
NC
Not Connected
Table 5
Abbreviations for Buffer Type
Abbreviation
Description
SSTL
Serial Stub Terminated Logic (SSTL_18)
LV-CMOS
CMOS
OD
Data Sheet
Low Voltage CMOS
CMOS Levels
Open Drain. The corresponding pin has 2 operational states, active low and tristate, and
allows multiple devices to share as a wire-OR.
12
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
7
8
9
A
VSSQ
DQS
VDDQ
DM
B
DQS
VSSQ
NC
DQ1
VDDQ
C
V DDQ
DQ0
VDDQ
NC
VSSQ
DQ3
D
DQ2
VSSQ
NC
V DDL
V REF
VSS
E
V SSDL
CK
V DD
CKE
WE
F
RAS
CK
ODT
BA0
BA1
G
CAS
CS
A10/AP
A1
H
A2
A0
A3
A5
J
A6
A4
A7
A9
K
A11
A8
A12
NC
L
NC
NC/A13
1
2
3
VDD
NC
VSS
NC
VSSQ
VDDQ
NC/BA2
V SS
VDD
4
5
6
V DD
VSS
MPPT0010
Figure 1
Pin Configuration P-TFBGA-60 (×4) Top View, see the balls throught the package
Notes
1. VDDL and VSSDL are power and ground for the
DLL.They are isolated on the device from VDD,
VDDQ, VSS and VSSQ.
Data Sheet
2. Ball position G1 is Not Connected and will be used
for BA2 on 1-Gbit memory densities and higher
3. Ball position L8 is A13 for 512-Mbit and higher and
is Not Connected on 256-Mbit
13
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
7
8
9
A
VSSQ
DQS
VDDQ
DM/
RDQS
B
DQS
VSSQ
DQ7
DQ1
VDDQ
C
V DDQ
DQ0
VDDQ
DQ4
VSSQ
DQ3
D
DQ2
VSSQ
DQ5
V DDL
V REF
VSS
E
V SSDL
CK
V DD
CKE
WE
F
RAS
CK
ODT
BA0
BA1
G
CAS
CS
A10/AP
A1
H
A2
A0
A3
A5
J
A6
A4
A7
A9
K
A11
A8
A12
NC
L
NC
NC/A13
1
2
3
VDD
NU/
RDQS
VSS
DQ6
VSSQ
VDDQ
NC/BA2
V SS
VDD
4
5
6
V DD
VSS
MPPT0080
Figure 2
Pin Configuration P-TFBGA-60 (×8) Top View, see the balls throught the package
Notes
4. VDDL and VSSDL are power and ground for the DLL.
They are isolated on thedevice from VDD, VDDQ, VSS
and VSSQ.
5. Ball position G1 is Not Connected and will be used
for BA2 on 1-Gbit memory densities and higher
6. Ball position L8 is A13 for 512-Mbit and higher and
is Not Connected on 256-Mbit
1. RDQS / RDQS are enabled by EMRS(1) command.
2. If RDQS / RDQS is enabled, the DM function is
disabled
3. When enabled, RDQS & RDQS are used as strobe
signals during reads.
Data Sheet
14
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
7
8
9
A
VSSQ
UDQS
VDDQ
UDM
B
UDQS
VSSQ
DQ15
DQ9
VDDQ
C
V DDQ
DQ8
VDDQ
DQ12
VSSQ
DQ11
D
UDQ2
VSSQ
DQ13
VDD
NC
VSS
E
VSSQ
LDQS
VDDQ
DQ6
VSSQ
LDM
F
LDQS
VSSQ
DQ7
VDDQ
DQ1
VDDQ
G
V DDQ
DQ0
VDDQ
DQ4
VSSQ
DQ3
H
DQ2
VSSQ
DQ5
V DDL
V REF
VSS
J
V SSDL
CK
V DD
CKE
WE
K
RAS
CK
ODT
BA0
BA1
L
CAS
CS
A10/AP
A1
M
A2
A0
A3
A5
N
A6
A4
A7
A9
P
A11
A8
A12
NC
R
NC
NC/A13
1
2
3
VDD
NC
VSS
DQ14
VSSQ
VDDQ
NC/BA2
V SS
VDD
4
5
6
V DD
VSS
MPPT0110
Figure 3
Pin Configuration P-TFBGA-84 (×16) Top View, see the balls throught the package
Notes
3. Ball position L1 will be used for BA2 on 1-Gbit
memory densities and higher
1. UDQS/UDQS is data strobe for upper byte,
LDQS/LDQS is data strobe for lower byte
2. UDM is the data mask signal for the upper byte
UDQ[7:0], LDM is the data mask signal for the lower
byte LDQ[7:0]
Data Sheet
15
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
1.5
512Mbit DDR2 Addressing
Table 6
512 Mbit DDR2 Addressing
Configuration
128 Mb x 4
64 Mb x 8
32 Mb x 16
Number of Banks
4
4
4
Note
Bank Address
BA[1:0]
BA[1:0]
BA[1:0]
Auto-Precharge
A10 / AP
A10 / AP
A10 / AP
Row Address
A[13:0]
A[13:0]
A[12:0]
Column Address
A11, A[9:0]
A[9:0]
A[9:0]
Number of Column Address Bits 11
10
10
1)
Number of I/Os
4
8
16
2)
Page Size [Bytes]
1024 (1K)
1024 (1K)
2048 (2K)
3)
1) Refered to as ’colbits’
2) Refered to as ’org’
3)
org
PageSize = 2 colbits × -------8
[ Bytes ]
1.6
Input/Output Functional Description
Table 7
Input/Output Functional Description
Symbol
Type
Function
CK, CK
Input
Clock: CK and CK are differential clock inputs. All address and control inputs are
sampled on the crossing of the positive edge of CK and negative edge of CK. Output
(read) data is referenced to the crossing of CK and CK (both directions of crossing).
CKE
Input
Clock Enable: CKE high activates and CKE low deactivates internal clock signals and
device input buffers and output drivers. Taking CKE low provides Precharge PowerDown and Self-Refresh operation (all banks idle), or Active Power-Down (row Active
in any bank). CKE is synchronous for power down entry and exit and for self-refresh
entry. Input buffers excluding CKE are disabled during self-refresh. CKE is used
asynchronously to detect self-refresh exit condition. Self-refresh termination itself is
synchronous. After VREF has become stable during power-on and initialisation
sequence, it must be maintained for proper operation of the CKE receiver. For proper
self-refresh entry and exit, VREF must be maintained to this input. CKE must be
maintained high throughout read and write accesses. Input buffers, excluding CK, CK,
ODT and CKE are disabled during power-down.
CS
Input
Chip Select: All commands are masked when CS is registered high. CS provides for
external rank selection on systems with multiple ranks. CS is considered part of the
command code.
ODT
Input
On Die Termination: ODT (registered high) enables termination resistance internal to
the DDR2 SDRAM. When enabled, ODT is only applied to each DQ, DQS, DQS and
DM signal for ×4 and DQ, DQS, DQS, RDQS, RDQS and DM for ×8 configurations.
For ×16 configuration ODT is applied to each DQ, UDQS, UDQS, LDQS, LDQS, UDM
and LDM signal. The ODT pin will be ignored if the EMRS(1) is programmed to disable
ODT.
RAS, CAS, WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being
entered
Data Sheet
16
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
Table 7
Input/Output Functional Description
Symbol
Type
Function
DM, LDM, UDM Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked
when DM is sampled high coincident with that input data during a Write access. DM is
sampled on both edges of DQS. Although DM pins are input only, the DM loading
matches the DQ and DQS loading. LDM and UDM are the input mask signals for ×16
components and control the lower or upper bytes. For ×8 components the data mask
function is disabled, when RDQS / RQDS are enabled by EMRS(1) command.
BA[1:0]
Input
Bank Address Inputs: BA[1:0] define to which bank an Activate, Read, Write or
Precharge command is being applied. BA[1:0] also determines if the mode register or
extended mode register is to be accessed during a MRS or EMRS(1) cycle.
A[13:0]
Input
Address Inputs: Provides the row address for Activate commands and the column
address and Auto-Precharge bit A10 (=AP) for Read/Write commands to select one
location out of the memory array in the respective bank. A10 (=AP) is sampled during
a Precharge command to determine whether the Precharge applies to one bank
(A10=low) or all banks (A10=high). If only one bank is to be precharged, the bank is
selected by BA[1:0]. The address inputs also provide the op-code during Mode
Register Set commands.
Row address A13 is used on ×4 and ×8 components only.
DQx
Input/
Output
Data Inputs/Output: Bi-directional data bus. DQ[0:3] for ×4 components, DQ[0:7] for
×8 components, DQ[0:15] for ×16 components.
DQS, (DQS)
LDQS, (LDQS),
UDQS,(UDQS)
Input/
Output
Data Strobe: output with read data, input with write data. Edge aligned with read data,
centered with write data. For the ×16, LDQS corresponds to the data on LDQ[7:0];
UDQS corresponds to the data on UDQ[7:0]. The data strobes DQS, LDQS, UDQS
may be used in single ended mode or paired with the optional complementary signals
DQS, LDQS, UDQS to provide differential pair signaling to the system during both
reads and writes. An EMRS(1) control bit enables or disables the complementary data
strobe signals.
RDQS, (RDQS) Input/
Output
Read Data Strobe: For the ×8 components a RDQS, RDQS pair can be enabled via
the EMRS(1) for read timing. RDQS, RDQS is not supported on ×4 and ×16
components. RDQS, RDQS are edge-aligned with read data. If RDQS, RDQS is
enabled, the DM function is disabled on ×8 components.
NC
—
No Connect: no internal electrical connection is present
VDDQ
VSSQ
VDDL
VSSDL
VDD
VSS
VREF
Supply DQ Power Supply: 1.8 V ± 0.1 V
(BA2), A[15:14]
—
Data Sheet
Supply DQ Ground
Supply DLL Power Supply: 1.8 V ± 0.1 V
Supply DLL Ground
Supply Power Supply: 1.8 V ± 0.1 V
Supply Ground
Supply Reference Voltage
BA2, A[15:14] are additional address pins for future generation DRAMs and are not
connected on this component.
17
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Overview
DQS,
DQS
Block Diagrams
COL0,1
CK, CK
16
4
4
4
COL 0, 1
2
9
A0 -A13,
BA0, BA1
16
11 Column-Address
Counter/Latch
Address Register
CS
WE
CAS
RAS
CKE
CK
CK
2
16
Refresh Counter
16
Command
Decode
Mode
Registers
Row-Address MUX
Control Logic
2
Bank Control Logic
14
16
Bank0
Row-Address Latch
& Decoder
MPBT0040
Block Diagram 32 Mbit × 4 I/O × 4 Internal Memory Banks
device; it does not represent an actual circuit
implementation.
3. DM is a unidirectional signal (input only), but is
internally loaded to match the load of the
bidirectional DQ and DQS signals.
Notes
1. 64Mbit x 4 Organisation with 14 Row, 2 Bank and
11 Column External Addresses
2. This Functional Block Diagram is intended to
facilitate user understanding of the operation of the
Data Sheet
4
512 (x16)
Column
lumn
Co
Decoder
CDecoder
olu
mn
Colum
n
Decoder
Decoder
I/OGating
DM MaskLogic
8192
Sense Amplifier
16384
Bank1
Bank2
Bank0
Memory
Array
(16384x 512x 16)
Bank3
16
16
16
Read Latch
Figure 4
4
4
4
Write
FIFO
&
Drivers
4
Data
4
1
1
4
1
1
1
1
Mask
COL0,1
4
4
1
2
DQS
Generator
Data
4
MUX
4
4
Receivers
DQS
Drivers
Input
Register
1
1
DLL
CK, CK
DQ0DQ3,
DM
1.7
18
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
COL0,1
8
8
CK, CK
32
8
8
COL0,1
10 Column-Address
Counter/Latch
2
16
Refresh Counter
16
CS
WE
CAS
RAS
A0 - A13,
BA0, BA1
Address Register
16
Mode
Registers
Command
Decode
Control Logic
Row-Address MUX
CKE
CK
CK
2
8
2
Bank Control Logic
14
16
Bank0
Row-Address Latch
& Decoder
MPBT0050
Block Diagram 16 Mbit × 8 I/O × 4 Internal Memory Banks
device; it does not represent an actual circuit
implementation.
3. DM is a unidirectional signal (input only), but is
internally loaded to match the load of the
bidirectional DQ and DQS signals.
Notes
1. 64Mb x 8 Organisation with 14 Row, 2 Bank and 10
Column External Addresses
2. This Functional Block Diagram is intended to
facilitate user understanding of the operation of the
Data Sheet
8
Data
Write
FIFO
&
Drivers
4
256 (x32)
Column
Column
Decoder
Column
Decoder
Column
Decoder
Decoder
I/O Gating
DM Mask Logic
8192
Sense Amplifier
16384
Bank1
Bank2
Bank0
Memory
Array
(16384x 256 x 32)
Bank3
32
32
32
Read Latch
Figure 5
8
8
1
1
8
1
1
8
1
1
8
8
Mask
COL0,1
1
1
DQS
Generator
Data
8
MUX
8
8
Receivers
DQS
Drivers
Input
Register
1
1
DLL
CK, CK
DQ0DQ7,
DM
DQS,
DQS
Overview
19
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
COL0,1
16
16
CK, CK
64
COL 0, 1
A0 - A12,
BA0, BA1
15
2
Address Register
CS
WE
CAS
RAS
CKE
CK
CK
16
16
Write
FIFO
&
Drivers
8
2
15
Refresh Counter
15
Mode
Registers
Command
Decode
Control Logic
Row-Address MUX
10 Column-Address
Counter/Latch
2
Bank Control Logic
13
15
Bank0
Row-Address Latch
& Decoder
MPBT0060
Block Diagram 8 Mbit × 16 I/O × 4 Internal Memory Banks
Notes
device; it does not represent an actual circuit
implementation.
3. LDM, UDM is a unidirectional signal (input only), but
is internally loaded to match the load of the
bidirectional LDQS and UDQS signals.
1. 32 Mb × 16 Organisation with 13 Row, 2 Bank and
10 Column External Adresses
2. This Functional Block Diagram is intended to
facilitate user understanding of the operation of the
Data Sheet
16
16
16
Data
16
2
2
16
2
2
8
256 (x64)
Column
Column
Decoder
Column
Decoder
Column
Decoder
Decoder
I/O Gating
DMMask Logic
16384
Sense Amplifier
8192
Bank1
Bank2
Bank0
Memory
Array
(16384x256 x64)
Bank3
64
64
64
Read Latch
Figure 6
UDQS,
UDQS
LDQS,
LDQS
UDQ0UDQ7,
UDQM
2
Mask
2
2
DQS
16
16
MUX
16
16
Receivers
COL0,1
16
Data
1
DQS
Generator
Drivers
Input
Register
2
2
DLL
CK, CK
LDQ0LDQ7,
LDM
Overview
20
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2
Functional Description
2.1
Simplified State Diagram
Auto
Refreshing
Initialization
Sequence
REF
tRFC
RE
PD_entry
MRS
Idle
CKEH
FS
tMRD
Setting
MRS or
EMRS
PRE
AC
T
Precharge
PD
CKEL
Self
Refresh
REFA
CKEL
SX
Activating
tRCD
Writing_AP
_A
P
PRE
P
Writing
Active PD
Reading
Wr
CKEL
Read
Re
_A
ad
it e
Write
Reading_AP
Precharging
Wr
Write_AP
RL + BL/2 + tRTP
tRP
Read_AP
WL + BL/2 + WR
i te
PD_entry
CKEH
Re
Bank
Active
ad
Automatic Sequence
Command Sequence
MPFT0010
Figure 7
Simplified State Diagram
bank, enabling / disabling on-die termination,
Power-Down entry / exit - among other things are not captured in full detail.
Note: This Simplified State Diagram is intended to
provide a floorplan of the possible state
transitions and thecommands to control them. In
particular situations involving more than one
Data Sheet
21
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.2
Basic Functionality
select the row for ×4 and ×8 components, A[12:0] select
the row for ×16 components.
Read and write accesses to the DDR2 SDRAM are
burst oriented; accesses start at a selected location
and continue for the burst length of four or eight in a
programmed sequence.
The address bits registered coincident with the Read or
Write command are used to select the starting column
location for the burst access and to determine if the
Auto-Precharge command is to be issued.
Accesses begin with the registration of an Activate
command, which is followed by a Read or Write
command. The address bits registered coincident with
the activate command are used to select the bank and
row to be accessed. BA[1:0] select the bank, A[13:0]
2.2.1
Prior to normal operation, the DDR2 SDRAM must be
initialized. The following sections provide detailed
information covering device initialization, register
definition, command description and device operation.
Power On and Initialization
DDR2 SDRAM’s must be powered up and initialized in a predefined manner. Operational procedures other than
those specified may result in undefined operation.
Power-up and Initialization Sequence
The following sequence is required for POWER UP and Initialization.
6. Issue EMRS(3) command. To issue EMRS(3)
command, provide “high” to BA[1:0].
7. Issue EMRS(1) to enable DLL. To issue “DLL
Enable” command, provide “low” to A0 and “high” to
BA0 and “low” to BA1 and A13.
8. Issue a MRS command for “DLL reset”. To issue
DLL reset command, provide “high” to A8 and “low”
to BA[1:0] and A13.
9. Issue Precharge-all command.
10. Issue 2 or more Auto-refresh commands.
11. Issue a MRS command with low on A8 to initialize
device operation (i.e. to program operating
parameters without resetting the DLL.)
12. At least 200 clocks after step 8, execute Off Chip
Driver impedance adjustment ( OCD Calibration). If
OCD calibration is not used, EMRS OCD Default
command (A9 = A8 = A7 = 1) followed by EMRS
OCD Calibration Mode Exit command
(A9 = A8 = A7 = 0) must be issued with other
operating parameters of EMRS(1).
13. The DDR2 SDRAM is now ready for normal
operation.
1. Apply power and attempt to maintain CKE below
0.2 × VDDQ and ODT at a low state (all other inputs
may be undefined). To guarantee ODT off, VREF
must be valid and a low level must be applied to the
ODT pin. Maximum power up interval for VDD / VDDQ
is specified as 10.0 ms. The power interval is
defined as the amount of time it takes for VDD / VDDQ
to power-up from 0 V to 1.8 V ± 100 mV. At least
one of these two sets of conditions must be met:
– VDD, VDDL and VDDQ are driven from a single
power converter output, AND
– VTT is limited to 0.95 V max, AND
– Vref tracks VDDQ/2
or
2.
3.
4.
5.
– Apply VDD before or at the same time as VDDL.
– Apply VDDL before or at the same time as VDDQ.
– Apply VDDQ before or at the same time as VTT &
Vref.
Start clock (CK, CK) and maintain stable power and
clock condition for a minimum of 200 µs..
Apply NOP or Deselect commands and take CKE
high.
Wait minimum of 400 ns, then issue a Precharge-all
command.
Issue EMRS(2) command. To issue EMRS(2)
command, provide “low” to BA0 and “high” to BA1.
Data Sheet
22
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
CK, CK
CKE
ODT "low"
tRP
400 ns
NOP
PRE
ALL
EMRS(2)
tMRS
tMRS
EMRS(3)
tMRS
EMRS(1)
tMRS
MRS
tRP
PRE
ALL
tRFC
1st Auto
refresh
2nd Auto
refresh
tRFC
tMRS
MRS
Follow OCD
flowchart
EMRS(1)
OCD
tMRS
EMRS(1)
OCD
Any
Command
min. 200 cycles to lock the DLL
Extended
Mode
Register(1) Set
with DLL enable
Mode
Register
Set with
DLL reset
Mode
Register
Set w/o
DLL reset
OCD Drive(1)
or
OCD default
OCD
calibration
mode exit
Figure 8
Initialization Sequence after Power Up
2.2.2
Programming the Mode Register and Extended Mode Registers
For application flexibility, burst length, burst type, CAS
latency, DLL reset function, write recovery time (tWR)
are user defined variables and must be programmed
with a Mode Register Set (MRS) command.
Additionally, DLL disable function, additive CAS
latency, driver impedance, On Die Termination (ODT),
single-ended strobe and Off Chip Driver impedance
adjustment (OCD) are also user defined variables and
must be programmed with an Extended Mode Register
Set (EMRS) command.
must be issued before read or write cycles may begin.
All banks must be in a precharged state and CKE must
be high at least one cycle before the Mode Register Set
Command can be issued. Either MRS or EMRS
Commands are activated by the low signals of CS,
RAS, CAS and WE at the positive edge of the clock.
Contents of the Mode Register (MRS) or Extended
Mode Registers (EMRS(#)) can be altered by reexecuting the MRS and EMRS Commands. If the user
chooses to modify only a subset of the MRS or EMRS
variables, all variables must be redefined when the
MRS or EMRS commands are issued.
The address input data during this cycle defines the
parameters to be set as shown in the MRS and EMRS
table. A new command may be issued after the mode
register set command cycle time (tMRD).
When both bank addresses BA[1:0] are low, the DDR2
SDRAM enables the MRS command. When the bank
addresses BA0 is high and BA1 is low, the DDR2
SDRAM enables the EMRS(1) command.
MRS, EMRS and DLL Reset do not affect array
contents, which means reinitialization including those
can be executed any time after power-up without
affecting array contents.
Also any programming of EMRS(2) or EMRS(3) must
be followed by programming of MRS and EMRS(1).
After initial power up, all MRS and EMRS Commands
2.2.2.1
DDR2 SDRAM Mode Register Set (MRS)
and clock cycle requirements during normal operation
as long as all banks are in the precharged state. The
mode register is divided into various fields depending
on functionality.
The mode register stores the data for controlling the
various operating modes of DDR2 SDRAM. It programs
CAS latency, burst length, burst sequence, test mode,
DLL reset, Write Recovery (WR) and various vendor
specific options to make DDR2 SDRAM useful for
various applications.
Burst length is defined by A[2:0] with options of 4 and 8
bit burst length. Burst address sequence type is defined
by A3 and CAS latency is defined by A[6:4]. A7 is used
for test mode and must be set to low for normal MRS
operation. A8 is used for DLL reset. A[11:9] are used for
write recovery time (tWR) definition for Auto-Precharge
mode. With address bit A12 two Power-Down modes
can be selected, a “standard mode” and a “low-power”
Power-Down mode, where the DLL is disabled.
Address bit A13 and all “higher” address bits have to
be set to “low” for compatibility with other DDR2
memory products with higher memory densities.
The default value of the mode register is not defined,
therefore the mode register must be written after
power-up for proper operation. The mode register is
written by asserting low on CS, RAS, CAS, WE,
BA[1:0], while controlling the state of address pins
A[13:0]. The DDR2 SDRAM should be in all bank
precharged (idle) mode with CKE already high prior to
writing into the mode register. The mode register set
command cycle time (tMRD) is required to complete the
write operation to the mode register. The mode register
contents can be changed using the same command
Data Sheet
23
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
MR
Mode Register Definition
BA1
BA0
A13
A12
0
0
01)
PD
w
reg. addr
(BA[1:0] = 00B)
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
WR
DLL
TM
CL
BT
BL
w
w
w
w
w
w
A0
1) A13 is only available for ×4 and ×8 configuration.
Field Bits
Type1) Description
BL
[2:0]
w
Burst Length
Number of sequential bits per DQ related to one read/write command.
010 4
011 8
BT
3
w
Burst Type
See Table 12 for internal address sequence of low order address bits; see Chapter 2.6.2.
0
Sequential
1
Interleaved
CL
[6:4]
w
CAS Latency
Number of clock cycles from read command to first data valid window; see Chapter 2.6.1.
Note: All other bit combinations are RESERVED.
010
011
100
101
2 2)
3
4
5
TM
7
w
Test Mode
0
Normal mode
1
Vendor specific test mode
DLL
8
w
DLL Reset
Reset of DLL is required after application of a stable clock; see .
0
No
1
Yes
WR
[11:9] w
Write Recovery
Number of clock cycles for write recovery during auto-precharge. WR in clock cycles is
calculated by dividing tWR (in ns) by tCK (in ns) and rounding up to the next integer:
WR[cycles] ≥ tWR(ns) / tCK(ns)
The mode register must be programmed to fulfill the minimum requirement for the
analogue tWR timing. WRmin is determined by tCK,max and WRmax is determined by tCK,min.
Note: All other bit combinations are RESERVED.
001
010
011
100
101
PD
12
w
2
3
4
5
6
Active Power-Down Mode Select
0
Fast exit (use tXARD)
1
Slow exit (use tXARDs)
1) w = write only register bits
2) CAS Latency 2 is optional for Jedec compliant devices. This option is implemented in this device but is neither tested nor
guaranteed.
Data Sheet
24
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.2.3
DDR2 SDRAM Extended Mode Register Set (EMRS(1))
BAO, while controlling the state of the address pins.
The DDR2 SDRAM should be in all bank precharge
with CKE already high prior to writing into the extended
mode register. The mode register set command cycle
time (tMRD) must be satisfied to complete the write
operation to the EMRS(1). Mode register contents can
be changed using the same command and clock cycle
requirements during normal operation as long as all
banks are in precharge state.
The Extended Mode Register EMRS(1) stores the data
for enabling or disabling the DLL, output driver
strength, additive latency, OCD program, ODT, DQS
and output buffers disable, RQDS and RDQS enable.
The default value of the extended mode register
EMRS(1) is not defined, therefore the extended mode
register must be written after power-up for proper
operation. The extended mode register is written by
asserting low on CS, RAS, CAS, WE, BA1 and high on
EMR(1)
Extended Mode Register Definition
BA1
BA0
A13
A12
0
1
01)
Q
reg. addr
A11
(BA[1:0] = 01B)
A10
RDQS DQS
OFF
w
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
OCD Program
Rtt
AL
Rtt
DIC
DLL
w
w
w
w
w
w
w
1) A13 is only available for ×4 and ×8 configuration.
Field
Bits
Type1) Description
DLL
0
w
DLL Enable
The DLL must be enabled for normal operation. See .
0
Enable
1
Disable
DIC
1
w
Off-chip Driver Impedance Control
0
Normal (Driver Size = 100%)
1
Weak (Driver Size = 60%)
RTT
2,6
w
Nominal Termination Resistance of ODT
Note: All other bit combinations are RESERVED.
00
10
01
AL
[5:3]
w
∞ (ODT disabled)
75 Ohm
150 Ohm
Additive Latency
The additive latency must be programmed into the device to delay all read and write
commands; see Chapter 2.5.
Note: All other bit combinations are RESERVED.
000
001
010
011
100
Data Sheet
0
1
2
3
4
25
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
Field
Bits
OCD
[9:7]
Program
Type1) Description (cont’d)
w
Off-Chip Driver Calibration Program
Every calibration mode command should be followed by “OCD calibration mode exit”
before any other command will be issued; see Chapter 2.3.
000 OCD calibration mode exit, maintain setting
001 Drive 1
010 Drive 0
100 Adjust mode
Note: When Adjust Mode is issued, AL from previously set value must be applied.
111 OCD calibration default
Note: After setting to default, OCD mode needs to be exited by setting A[9:7] to 000.
DQS
10
w
Complement Query Strobe (DQS, RDQS Output)
If enabled the complement query strobe (DQS output) is driven high one clock cycle
before valid query data (DQ) is driven onto the data bus; see Chapter 2.6.3.
0
Enable
1
Disable
RDQS
11
w
Read Data Strobe Output (RDQS, RDQS)
0
Disable
1
Enable
Qoff
12
w
Output Disable
Disabling the DRAM outputs (DQ, DQS, DQS, RDQS, RDQS) allows users to
measure IDD during Read operations without including the output buffer current.
0
Output buffers enabled
1
Output buffers disabled
1) w = write only register bits
operation. With A12 set to “high” the SDRAM outputs
are disabled and in Hi-Z. “High” on BA0 and “low” for
BA1 have to be set to access the EMRS(1). A13 and all
“higher” address bits have to be set to “low” for
compatibility with other DDR2 memory products with
higher memory densities. Refer to Mode Register
Definition (BA[1:0] = 00B).
A0 is used for DLL enable or disable. A1 is used for
enabling half-strength data-output driver. A2 and A6
enables ODT (On-Die termination) and sets the Rtt
value. A[5:3] are used for additive latency settings and
A[9:7] enables the OCD impedance adjustment mode.
A10 enables or disables the differential DQS and
RDQS signals, A11 disables or enables RDQS.
Address bit A12 have to be set to “low” for normal
Single-ended and Differential Data Strobe Signals
If RDQS is enabled in ×8 components, the DM function
is disabled. RDQS is active for reads and don’t care for
writes.
Table 8 lists all possible combinations for DQS, DQS,
RDQS, RQDS which can be programmed by A[11:10]
address bits in EMRS. RDQS and RDQS are available
in ×8 components only.
Table 8
Single-ended and Differential Data Strobe Signals
EMRS(1)
Strobe Function Matrix
Signaling
A11
A10
RDQS/DM
(RDQS Enable) (DQS Enable)
RDQS
DQS
DQS
0 (Disable)
0 (Enable)
DM
Hi-Z
DQS
DQS
differential DQS signals
0 (Disable)
1 (Disable)
DM
Hi-Z
DQS
Hi-Z
single-ended DQS signals
1 (Enable)
0 (Enable)
RDQS
RDQS
DQS
DQS
differential DQS signals
1 (Enable)
1 (Disable)
RDQS
Hi-Z
DQS
Hi-Z
single-ended DQS signals
DLL Enable/Disable
Data Sheet
26
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
the DLL is enabled (and subsequently reset), 200 clock
cycles must occur before a Read command can be
issued to allow time for the internal clock to be
synchronized with the external clock. Failing to wait for
synchronization to occur may result in a violation of the
tAC or tDQSCK parameters.
The DLL must be enabled for normal operation. DLL
enable is required during power up initialization, and
upon returning to normal operation after having the DLL
disabled. The DLL is automatically disabled when
entering Self-Refresh operation and is automatically reenabled upon exit of Self-Refresh operation. Any time
Output Disable (Qoff)
DRAM outputs allows users to measure IDD currents
during Read operations, without including the output
buffer current.
Under normal operation, the DRAM outputs are
enabled during Read operation for driving data (Qoff bit
in the EMRS(1) is set to 0). When the Qoff bit is set to
1, the DRAM outputs will be disabled. Disabling the
2.2.4
EMRS(2)
BA1,while controlling the states of the address pins.
The DDR2 SDRAM should be in all bank precharge
with CKE already high prior to writing into the extended
mode register(2). The mode register set command
cycle time (tMRD) must be satisfied to complete the write
operation to the extended mode register(2). Mode
register contents can be changed using the same
command and clock cycle requirements during normal
operation as long as all banks are in precharge state.
The Extended Mode Registers EMRS(2) and EMRS(3)
are reserved for future use and must be programmed
when setting the mode register during initialization.
The extended mode register(2) controls refresh related
features. The default value of the extended mode register(2) is not defined, therefore the extended mode
register(2) must be written after Power-up for proper
operation.
The extended mode register EMRS(2) is written by
asserting low on CS, RAS, CAS, WE, BA0 and high on
EMRS(2) Programming
Extended Mode Register Definition
BA1
BA0
1
0
A13
A12
A11
A10
(BA[1:0] = 01B)
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
01)2)
reg.addr
1) A13 is only available for ×4 and ×8 configuration.
2) Must be programmed to “0”
2.2.5
EMRS(3)
The Extended Mode Register EMRS(3) is reserved for
future use and all bits except BA0 and BA1 must be
EMRS(3) Programming
Extended Mode Register Definition
BA1
BA0
1
1
A13
A12
A11
A10
programmed to 0 when setting the mode register during
initialization.
(BA[1:0] = 01B)
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
01)2)
reg. addr
1) A13 is only available for ×4 and ×8 configuration.
2) Must be programmed to “0”
Data Sheet
27
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.3
Off-Chip Driver (OCD) Impedance Adjustment
command being issued. MRS should be set before
entering OCD impedance adjustment and On Die
Termination (ODT) should be carefully controlled
depending on system environment.
DDR2 SDRAM supports driver calibration feature and
the flow chart below is an example of the sequence.
Every calibration mode command should be followed
by “OCD calibration mode exit” before any other
Start
EMRS: OCD calibration mode exit
EMRS: Drive (1)
DQ & DQS High; DQS Low
Test
EMRS: Drive (0)
DQ & DQS Low; DQS High
ALL OK
ALL OK
Need Calibration
Test
Need Calibration
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS:
Enter Adjust Mode
EMRS:
Enter Adjust Mode
BL = 4 code input to all DQs
Inc, Dec or NOP
BL = 4 code input to all DQs
Inc, Dec or NOP
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
End
MPFT0020
Figure 9
OCD Impedance Adjustment Flow Chart
Note
1. MRS should be set before entering OCD impedance adjustment and ODT should be carefully controlled
depending on system environment
Data Sheet
28
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
Extended Mode Register Set for OCD impedance adjustment
voltage conditions. Output driver characteristics for
OCD calibration default are specified in Table 10. OCD
applies only to normal full strength output drive setting
defined by EMRS(1) and if half strength is set, OCD
default output driver characteristics are not applicable.
When OCD calibration adjust mode is used, OCD
default output driver characteristics are not applicable.
After OCD calibration is completed or driver strength is
set to default, subsequent EMRS(1) commands not
intended to adjust OCD characteristics must specify
A[9:7] as ’000’ in order to maintain the default or
calibrated value.
OCD impedance adjustment can be done using the
following EMRS(1) mode. In drive mode all outputs are
driven out by DDR2 SDRAM and drive of RDQS is
dependent on EMRS(1) bit enabling RDQS operation.
In Drive(1) mode, all DQ, DQS (and RDQS) signals are
driven high and all DQS (and RDQS) signals are driven
low. In Drive(0) mode, all DQ, DQS (and RDQS) signals
are driven low and all DQS (and RDQS) signals are
driven high. In adjust mode, BL = 4 of operation code
data must be used. In case of OCD calibration default,
output driver characteristics have a nominal impedance
value of 18 Ohms during nominal temperature and
Table 9
Output driver characteristics for OCD calibration
A9
A8
A7
Operation
0
0
0
OCD calibration mode exit
0
0
1
Drive(1) DQ, DQS, (RDQS) high and DQS (RDQS) low
0
1
0
Drive(0) DQ, DQS, (RDQS) low and DQS (RDQS) high
1
0
0
Adjust mode
1
1
1
OCD calibration default
OCD impedance adjust
after OCD calibration, all DQs of a given DDR2 SDRAM
will be adjusted to the same driver strength setting. The
maximum step count for adjustment is 16 and when the
limit is reached, further increment or decrement code
has no effect. The default setting may be any step
within the maximum step count range. When Adjust
mode command is issued, AL from previously set value
must be applied.
To adjust output driver impedance, controllers must
issue the ADJUST EMRS(1) command along with a 4
bit burst code to DDR2 SDRAM as in Table 10. For this
operation, Burst Length has to be set to BL = 4 via MRS
command before activating OCD and controllers must
drive the burst code to all DQs at the same time. DT0 in
Table 10 means all DQ bits at bit time 0, DT1 at bit time
1, and so forth. The driver output impedance is
adjusted for all DDR2 SDRAM DQs simultaneously and
Table 10
Off- Chip-Driver Adjust Program
4 bit burst code inputs to all DQs
Operation
DT0
DT1
DT2
DT3
Pull-up driver strength
Pull-down driver strength
0
0
0
0
NOP (no operation)
NOP (no operation)
0
0
0
1
Increase by 1 step
NOP
0
0
1
0
Decrease by 1 step
NOP
0
1
0
0
NOP
Increase by 1 step
1
0
0
0
NOP
Decrease by 1 step
0
1
0
1
Increase by 1 step
Increase by 1 step
0
1
1
0
Decrease by 1 step
Increase by 1 step
1
0
0
1
Increase by 1 step
Decrease by 1 step
1
0
1
0
Decrease by 1 step
Decrease by 1 step
Other Combinations
Data Sheet
Reserved
29
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
For proper operation of adjust mode, WL = RL - 1 =
AL + CL - 1 clocks and tDS / tDH should be met as
Figure 10. Input data pattern for adjustment, DT[0:3] is
fixed and not affected by MRS addressing mode (i.e.
sequential or interleave).
Burst length of 4 have to be programmed in the MRS for
OCD impedance adjustment.
CK, CK
CMD
NOP
EMRS(1)
NOP
NOP
NOP
NOP
WL
NOP
EMRS(1)
NOP
tWR
DQS
DQS_in
tDS tDH
DQ_in
DT0
DT1
DT2
DT3
DM
Figure 10
OCD1
OCD calibration
mode exit
OCD adjust mode
Timing Diagram Adjust Mode
Drive Mode
mode” command and all output drivers are turned-off
Drive mode, both Drive(1) and Drive(0), is used for
controllers to measure DDR2 SDRAM Driver
impedance before OCD impedance adjustment. In this
mode, all outputs are driven out tOIT after “enter drive
tOIT after “OCD calibration mode exit” command. See
Figure 11.
CK, CK
CMD
EMRS(1)
NOP
NOP
NOP
NOP
tOIT
DQS_in
EMRS(1)
NOP
NOP
NOP
tOIT
DQS high & DQS low for Drive(1), DQS low & DQS high for Drive 0
DQS high for Drive(1)
DQS high for Drive(0)
DQ_in
OCD calibration
mode exit
Enter Drive Mode
Figure 11
Data Sheet
OCD2
Timing Diagram Drive Mode
30
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.4
On-Die Termination (ODT)
the ODT control pin. UDQS and LDQS are terminated
only when enabled in the EMRS(1) by address bit
A10 = 0.
On-Die Termination (ODT) is a new feature on DDR2
components that allows a DRAM to turn on/off
termination resistance for each DQ, DQS, DQS, DM for
×4 and DQ, DQS, DQS, DM, RDQS (DM/RDQS share
the same pin), RDQS for ×8 configuration via the ODT
control pin. DQS is terminated only when enabled in the
EMRS(1) by address bit A10 = 0. For ×8 configuration
RDQS is only terminated, when enabled in the
EMRS(1) by address bits A10 = 0 and A11 = 1.
The ODT feature is designed to improve signal integrity of the memory channel by allowing the DRAM controller to independently turn on/off termination
resistance for any or all DRAM devices.
The ODT function can be used for all active and
standby modes. ODT is turned off and not supported in
Self-Refresh mode.
For ×16 configuration ODT is applied to each DQ,
UDQS, UDQS, LDQS, LDQS, UDM and LDM signal via
VDDQ
VDDQ
sw1
sw2
Rval1
Rval2
DRAM
Input
Buffer
Input
Pin
Rval1
Rval2
sw1
sw2
VSSQ
VSSQ
Figure 12
Functional Representation of ODT
Target Rtt = 0.5 × Rval1 or 0.5 × Rval2.
Switch sw1 or sw2 is enabled by the ODT pin. Selection
between sw1 or sw2 is determined by “Rtt (nominal)” in
EMRS(1) address bits A6 & A2.
Data Sheet
The ODT pin will be ignored if the Extended Mode
Register (EMRS(1)) is programmed to disable ODT.
31
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
ODT Truth Tables
organisations (×4, ×8 and ×16). To activate termination
of any of these pins, the ODT function has to be
enabled in the EMRS(1) by address bits A6 and A2.
The ODT Truth Table shows which of the input pins are
terminated depending on the state of address bit A10
and A11 in the EMRS(1) for all three device
Table 11
ODT Truth Table
Input Pin
EMRS(1)
Address Bit A10
EMRS(1)
Address Bit A11
X
X
×4 components
DQ[3:0]
DQS
X
X
DQS
0
X
DM
X
X
DQ[7:0]
X
X
DQS
X
X
DQS
0
X
RDQS
X
1
RDQS
0
1
DM
X
0
DQ[15:0]
X
X
LDQS
X
X
LDQS
0
X
UDQS
X
X
UDQS
0
X
LDM
X
X
UDM
X
X
×8 components
×16 components
Note: X = don’t care; 0 = bit set to low; 1 = bit set to high
ODT timing modes
Depending on the operating mode synchronous or
asynchronous ODT timings apply. Synchronous
timings (tAOND, tAOFD, tAON and tAOF) apply for all modes,
when the on-die DLL is enabled.
These modes are:
Asynchronous ODT timings (tAOFPD, tAONPD) apply when
the on-die DLL is disabled.
•
•
•
•
These modes are:
•
Active Mode
Standby Mode
Fast Exit Active Power Down Mode (with MRS bit
A12 is set to “0”)
Data Sheet
32
Slow Exit Active Power Down Mode (with MRS bit
A12 is set to “1”)
Precharge Power Down Mode
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T
T
T
T
T
T
T
T
0
1
2
3
4
5
6
7
T
8
CK, CK
CKE
see note 1
t
IS
t
ODT
IS
tAOFD (2.5 tCK)
tAOND (2 tck)
Rtt
DQ
tAON(min)
tAOF(min)
tAOF(max)
tAON(max)
ODT01
Figure 13
ODT Timing for Active and Standby (Idle) Modes
Note:
to turn on. ODT turn on time max. (tAON max) is when
the ODT resistance is fully on. Both are measured
from tAOND.
3. ODT turn off time min. (tAOF min) is when the device
starts to turn off the ODT resistance.ODT turn off
time max. (tAOF max) is when the bus is in high
impedance. Both are measured from tAOFD.
1. Synchronous ODT timings apply for Active Mode
and Standby Mode with CKE “high” and for the
“Fast Exit” Active Power Down Mode (MRS bit A12
set to “0”). In all these modes the on-die DLL is
enabled.
2. ODT turn-on time (tAON,min) is when the device
leaves high impedance and ODT resistance begins
T
1
T
0
T
3
T
2
T
4
T
5
T
6
T
7
T
8
CK, CK
CKE
"low"
tIS
ODT
tIS
tAOFPD,min
tAOFPD,max
DQ
Rtt
tAONPD,min
tAONPD,max
ODT02
Figure 14
ODT Timing for Precharge Power-Down and Active Power-Down Mode (with slow exit)
(Asynchronous ODT timings)
Note: Asynchronous ODT timings apply for Precharge Power-Down Mode and “Slow Exit” Active Power Down
Mode (MRS bit A12 set to “1”), where the on-die DLL is disabled in this mode of operation.
Data Sheet
33
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
Mode entry:
As long as the timing parameter tANPD, min is satisfied
when ODT is turned on or off before entering these
power-down modes, synchronous timing parameters
can be applied. If tANPD, min is not satisfied,
asynchronous timing parameters apply.
T-
T-
T-
T-
T-
T
5
4
3
2
1
0
T
1
T
2
CK, CK
tANPD (3 tCK)
t
CKE
IS
ODT turn-off, tANPD >= 3 tCK :
t
IS
ODT
Synchronou
timings
apply
RTT
tAOFD
ODT turn-off, tANPD <3 tCK :
ODT
Asynchronou
timings
apply
RTT
tAOFPDmax
ODT turn-on, tANPD >= 3 tCK :
t
IS
ODT
tAOND
Synchronou
timings
apply
RTT
t
IS
ODT turn-on, tANPD < 3 tCK :
tAONPDmax
ODT
RTT
ODT0
3
Figure 15
Data Sheet
Asynchronou
timings
apply
ODT Mode entry Timing Diagram
34
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
Mode exit:
As long as the timing parameter tAXPD, min is satisfied
when ODT is turned on or off after exiting these powerdown modes, synchronous timing parameters can be
T
1
T
0
T
5
applied. If tAXPD, min is not satisfied, asynchronous timing
parameters apply.
T
6
T
7
T
8
T
9
T10
CK, CK
t IS
tAXPD
CKE
t IS
ODT turn-off, tAXPD >= tAXPDmin:
Synchronous
ODT
timings apply
Rtt
tAOFD
ODT turn-off, tAXPD < tAXPDmin:
Asynchronous
t IS
ODT
timings apply
Rtt
tAOFPDmax
ODT turn-on, tAXPD >= tAXPDmin:
Synchronou s
t IS
timings apply
ODT
Rtt
tAOND
t IS
ODT turn-on, tAXPD < tAXPDmin:
Asynchronous
ODT
Rtt
timings apply
tAONPDmax
ODT04
Figure 16
ODT Mode exit Timing Diagram
2.5
Bank Activate Command
(with or without Auto-Precharge) on the following clock
cycle. If a R/W command is issued to a bank that has
not satisfied the tRCD, min specification, then additive
latency must be programmed into the device to delay
the R/W command which is internally issued to the
device. The additive latency value must be chosen to
assure tRCD, min is satisfied. Additive latencies of 0, 1, 2,
3 and 4 are supported. Once a bank has been activated
it must be precharged before another Bank Activate
command can be applied to the same bank. The bank
active and precharge times are defined as tRAS and tRP,
The Bank Activate command is issued by holding CAS
and WE high with CS and RAS low at the rising edge of
the clock. The bank addresses BA[1:0] are used to
select the desired bank. The row addresses A0 through
A13 are used to determine which row to activate in the
selected bank for ×4 and ×8 organised components.
For ×16 components row addresses A0 through A12
have to be applied. The Bank Activate command must
be applied before any Read or Write operation can be
executed. Immediately after the bank active command,
the DDR2 SDRAM can accept a read or write command
Data Sheet
35
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
more time for RAS precharge for a Precharge-All
command. The rules are as follows:
respectively. The minimum time interval between
successive Bank Activate commands to the same bank
is determined (tRC). The minimum time interval between
Bank Active commands, to any other bank, is the Bank
A to Bank B delay time (tRRD).
1. Sequential Bank Activation Restriction (JEDEC
ballot item 1293.15): No more than 4 banks may be
activated in a rolling tFAW window. Converting to
clocks is done by deviding tFAW(ns) by tCK(ns) and
rounding up to next integer value. As an example of
the rolling window, if (tFAW/tCK) rounds up to 10
clocks, and an activate command is issued in clock
N, no more than three further activate commands
may be issued in clocks N + 1 through N + 9.
2. Precharge All Allowance: tRP for a Precharge-All
command will equal to tRP + 1 tCK, where tRP is the
value for a single bank precharge.
In order to ensure that components with 8 internal
memory banks do not exceed the instantaneous
current supplying capability, certain restrictions on
operation of the 8 banks must be observed. There are
two rules.
One for restricting the number of sequential Active
commands that can be issued and another for allowing
T
0
T
1
T
2
T
3
T
4
T
n
Tn+1
Tn+2
Tn+3
CK, CK
Internal RAS-CAS delay tRCDmin.
Address
Bank A
Row Addr.
Bank A
Col. Addr.
Bank B
Row Addr.
Bank B
Col. Addr.
Bank A
Addr.
NOP
Bank B
Addr.
Bank A
Precharge
NOP
Bank B
Precharge
Bank A
Row Addr.
Bank A to Bank B delay tRRD.
additive latency AL=2
Command
Bank A
Activate
Posted CAS
Read A
Bank B
Activate
Read A Begins
Posted CAS
Read B
tRAS Row Active Time (Bank A)
Bank A
Activate
tRP Row Precharge Time (Bank A)
tCCD
tRC Row Cycle Time (Bank A)
ACT
Figure 17
Bank Activate Command Cycle: tRCD = 3, AL = 2, tRP = 3, tRRD = 2
2.6
Read and Write Commands and Access Modes
In case of a 4-bit burst operation (burst length = 4) the
page length of 2048 is divided into 512 uniquely
addressable segments (4-bits × 4 I/O each). The 4-bit
burst operation will occur entirely within one of the 512
segments (defined by CA[8:0] beginning with the
column address supplied to the device during the Read
or Write Command (CA[9:0] & A11). The second, third
and fourth access will also occur within this segment,
however, the burst order is a function of the starting
address, and the burst sequence.
After a bank has been activated, a read or write cycle
can be executed. This is accomplished by setting RAS
high, CS and CAS low at the clock’s rising edge. WE
must also be defined at this time to determine whether
the access cycle is a read operation (WE high) or a
write operation (WE low). The DDR2 SDRAM provides
a wide variety of fast access modes. A single Read or
Write Command will initiate a serial read or write
operation on successive clock cycles at data rates of up
to 667 Mb/sec/pin for main memory. The boundary of
the burst cycle is restricted to specific segments of the
page length.
In case of a 8-bit burst operation (burst length = 8) the
page length of 2048 is divided into 256 uniquely
addressable double segments (8-bits × 4 I/O each).
The 8-bit burst operation will occur entirely within one
of the 256 double segments (defined by CA[7:0])
For example, the 32Mbit × 4 I/O × 4 Bank chip has a
page length of 2048 bits (defined by CA[9:0] & CA11).
Data Sheet
36
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
minimum CAS to CAS delay (tCCD) is a minimum of 2
clocks for read or write cycles.
beginning with the column address supplied to the
device during the Read or Write Command (CA[9:0] &
CA11).
For 8 bit burst operation (BL = 8) the minimum CAS to
CAS delay (tCCD) is 4 clocks for read or write cycles.
A new burst access must not interrupt the previous 4 bit
burst operation in case of BL = 4 setting. Therefore the
T
0
T
1
T
2
T
3
Burst interruption is allowed with 8 bit burst operation.
For details see Chapter 2.6.6.
T
4
T
5
T
6
T
7
T12
CK, CK
CMD
NOP
READ A
NOP
READ B
tCCD
NOP
READ C
NOP
NOP
NOP
NOP
tCCD
DQS,
DQS
DQ
Dout A0
Dout A1
Dout A2
Dout A3
Dout B0
Dout B1
Dout B2
Dout B3
Dout C0
Dout C1
Dout C2
Dout C3
RB
Figure 18
Read Burst Timing Example: (CL = 3, AL = 0, RL = 3, BL = 4)
2.6.1
Posted CAS
the CAS latency (CL). Therefore if a user chooses to
issue a Read/Write command before the tRCD, min, then
AL greater than 0 must be written into the EMRS(1).
The Write Latency (WL) is always defined as RL - 1
(Read Latency -1) where Read Latency is defined as
the sum of Additive Latency plus CAS latency
(RL=AL+CL). If a user chooses to issue a Read
command after the tRCD, min period, the Read Latency is
also defined as RL = AL + CL.
Posted CAS operation is supported to make command
and data bus efficient for sustainable bandwidths in
DDR2 SDRAM. In this operation, the DDR2 SDRAM
allows a Read or Write command to be issued
immediately after the RAS bank activate command (or
any time during the RAS to CAS delay time, tRCD
period). The command is held for the time of the
Additive Latency (AL) before it is issued inside the
device. The Read Latency (RL) is the sum of AL and
0
1
2
3
4
5
6
7
8
9
10
11
CK, CK
WL = RL -1 = 4
CMD
Activate
Bank A
Write
Bank A
Read
Bank A
AL = 2
DQS,
DQS
CL = 3
tRCD
RL = AL + CL = 5
DQ
Dout0
Dout1
Dout2
Dout3
Din0
Din1
Din2
Din3
PostCAS1
Figure 19
Data Sheet
Activate to Read Timing Example : Read followed by a write to the same bank, Activate to
Read delay < tRCDmin: AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL -1) = 4, BL = 4
37
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
0
1
2
3
4
5
6
7
8
9
10
11
12
CK, CK
WL = RL -1 = 4
Activate
Bank A
CMD
Write
Bank A
Read
Bank A
AL = 2
DQS,
DQS
CL = 3
tRCD
RL = AL + CL = 5
DQ
Dout0
Dout1
Dout2
Dout3
Dout4
Dout5
Dout6
Dout7
Din0
Din1
Din2
Din3
PostCAS3
Figure 20
Read to Write Timing Example : Read followed by a write to the same bank, Activate to Read
delay < tRCDmin: AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL -1) = 4, BL = 8
0
1
2
3
4
5
6
7
8
9
10
11
CK, CK
AL = 0
Activate
Bank A
CMD
Read
Bank A
Write
Bank A
CL = 3
DQS,
DQS
WL = RL -1 = 2
tRCD
RL = AL + CL = 3
DQ
Dout0
Dout1
Dout2
Dout3
Din0
Din1
Din2
Din3
PostCAS2
Figure 21
Read to Write Timing Example : Read followed by a write to the same bank, Activate to Read
delay = tRCDmin: AL = 0, CL = 3, RL = (AL + CL) = 3, WL = (RL -1) = 2, BL = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
CK, CK
WL = 3
CMD
Activate
Bank A
Write
Bank A
Read
Bank A
tRCD > tRCDmin.
DQS,
DQS
RL = 4
DQ
Dout0
Dout1
Dout2
Dout3
Din0
Din1
Din2
Din3
PostCAS5
Figure 22
Read to Write Timing Example : Read followed by a write to the same bank, Activate to Read
delay > tRCDmin: AL = 1, CL = 3, RL = 4, WL = 3, BL = 4
2.6.2
Burst Mode Operation
mode, full interleave address ordering is supported,
however, sequential address ordering is nibble based
for ease of implementation. The burst length is
programmable and defined by the addresses A[2:0] of
the MRS. The burst type, either sequential or
interleaved, is programmable and defined by the
Burst mode operation is used to provide a constant flow
of data to memory locations (write cycle), or from
memory locations (read cycle). The parameters that
define how the burst mode will operate are burst
sequence and burst length. The DDR2 SDRAM
supports 4 bit and 8 bit burst modes only. For 8 bit burst
Data Sheet
38
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
write burst when burst length = 8 is used, see the
Chapter 2.6.6. A Burst Stop command is not supported
on DDR2 SDRAM devices.
address bit 3 (A3) of the MRS. Seamless burst read or
write operations are supported. Interruption of a burst
read or write operation is prohibited, when burst length
= 4 is programmed. For burst interruption of a read or
Table 12
Burst Length and Sequence
Burst Length
Starting Address
(A2 A1 A0)
Sequential Addressing
(decimal)
Interleave Addressing
(decimal)
4
000
0, 1, 2, 3
0, 1, 2, 3
001
1, 2, 3, 0
1, 0, 3, 2
010
2, 3, 0, 1
2, 3, 0, 1
011
3, 0, 1, 2
3, 2, 1, 0
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
011
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
111
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
8
Note:
1. Page length is a function of I/O organization: 128Mb X 4 organization (CA[9:0], CA11); Page Length = 1 kByte;
64Mb X 8 organization (CA[9:0]); Page Length = 1 kByte; 32Mb X 16 organization (CA[9:0]); Page Length = 2
kByte
2. Order of burst access for sequential addressing is “nibble-based” and therefore different from SDR or DDR
components
2.6.3
Read Command
data bus. The first bit of the burst is synchronized with
the rising edge of the data strobe (DQS). Each
subsequent data-out appears on the DQ pin in phase
with the DQS signal in a source synchronous manner.
The RL is equal to an additive latency (AL) plus CAS
latency (CL). The CL is defined by the Mode Register
Set (MRS). The AL is defined by the Extended Mode
Register Set (EMRS(1)).
The Read command is initiated by having CS and CAS
low while holding RAS and WE high at the rising edge
of the clock. The address inputs determine the starting
column address for the burst. The delay from the start
of the command until the data from the first cell appears
on the outputs is equal to the value of the read latency
(RL). The data strobe output (DQS) is driven low one
clock cycle before valid data (DQ) is driven onto the
Data Sheet
39
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
t CH
t CL
t CK
CLK
CLK, CLK
CLK
t DQSCK
t AC
DQS
DQS,
DQS
DQS
t RPRE
t RPST
t LZ
DQ
Dout
Dout
t DQSQmax
Dout
Dout
t DQSQmax
t QH
t HZ
t QH
DO-Read
Figure 23
Basic Read Timing Diagram
T
0
T
1
T
2
T
3
T
4
T
5
T
6
T
7
T
8
CK, CK
CMD
Post CAS
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
<= tDQSCK
DQS,
DQS
AL = 2
CL = 3
RL = 5
DQ
Dout A0
Dout A1
Dout A2
Dout A3
BRead523
Figure 24
Burst Operation Example 1: RL = 5 (AL = 2, CL = 3, BL = 4)
The seamless read operation is supported by enabling a read command at every BL / 2 number of clocks. This
operation is allowed regardless of same or different banks as long as the banks are activated.
Data Sheet
40
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T
0
T
1
T
2
T
3
T
4
T
5
T
6
T
7
T
8
CK, CK
CM
D
NOP
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
<= tDQSCK
DQS,
DQS
CL = 3
DQ'
s
RL = 3
Dout A0
Dout A1
Dout A2
Dout A3
Dout A4
Dout A5
Dout A6
Dout A7
BRead303
Figure 25
Read Operation Example 2: RL = 3 (AL = 0, CL = 3, BL = 8)
T
0
T
1
T
3
T
4
T
5
T
6
T
7
T
8
T
9
CK, CK
CMD
Posted CAS
READ A
NOP
NOP
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
BL/2 + 2
DQS,
DQS
WL = RL - 1 = 4
RL = 5
DQ
Dout A0
Dout A1
Dout A2
Dout A3
Din A0
Din A1
Din A2
Din A3
BRBW514
Figure 26
Read followed by Write Example: RL = 5, WL = (RL-1) = 4, BL = 4
The minimum time from the read command to the write command is defined by a read-to-write turn-around time,
which is BL/2 + 2 clocks.
Data Sheet
41
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T
0
T
1
T
2
T
3
T
4
T
5
T
6
T
7
T
8
CK, CK
CMD
Post CAS
READ A
Post CAS
READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS,
DQS
AL = 2
CL = 3
RL = 5
DQ
Dout A0
Dout A1
Dout A2
Dout A3
Dout B0
Dout B1
Dout B2
Dout B3
SBR523
Figure 27
Seamless Read Operation Example: RL = 5, AL = 2, CL = 3, BL = 4
The seamless read operation is supported by enabling a read command at every BL / 2 number of clocks. This
operation is allowed regardless of same or different banks as long as the banks are activated.
T
0
T
1
T
2
T
3
T
4
T
5
T
6
T
7
T
8
T
9
T10
CK, CK
CMD
Post CAS
READ A
NOP
NOP
NOP
Post CAS
READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS,
DQS
CL = 3
DQ
RL = 3
Dout A0
Dout A1
Dout A2
Dout A3
Dout A4
Dout A5
Dout A4
Dout A7
Dout B0
Dout B1
Dout B2
Dout B3
Dout B4
Dout B5
Dout B6
Dout B7
SBR_BL8
Figure 28
Seamless Read Operation Example: RL = 3, AL = 0, CL = 3, BL = 8 (non interrupting)
The seamless, non interrupting 8-bit read operation is supported by enabling a read command at every BL/2
number of clocks. This operation is allowed regardless of same or different banks as long as the banks are
activated.
2.6.4
Write Command
successive edges of the DQS until the burst length is
completed. When the burst has finished, any additional
data supplied to the DQ pins will be ignored. The DQ
signal is ignored after the burst write operation is
complete. The time from the completion of the burst
write to bank precharge is named “write recovery time”
(tWR) and is the time needed to store the write data into
the memory array. tWR is an analog timing parameter
(see AC & DC Operating Conditions) and is not the
programmed value for WR in the MRS.
The Write command is initiated by having CS, CAS and
WE low while holding RAS high at the rising edge of the
clock. The address inputs determine the starting
column address. Write latency (WL) is defined by a
read latency (RL) minus one and is equal to (AL + CL 1). A data strobe signal (DQS) has to be driven low
(preamble) a time tWPRE prior to the WL. The first data
bit of the burst cycle must be applied to the DQ pins at
the first rising edge of the DQS following the preamble.
The tDQSS specification must be satisfied for write
cycles. The subsequent burst bit data are issued on
Data Sheet
42
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
t DQSH
t DQSL
DQS
DQS,
DQS
DQS
t WPST
t WPRE
Din
Din
Din
t DS
Figure 29
Din
t DH
Basic Write Timing
T0
T1
T2
T3
T4
T5
T6
T7
T9
CK, CK
CMD
P o st C A S
W R IT E A
NOP
NOP
NOP
NOP
NOP
NOP
<= tDQSS
NOP
P re c h a rg e
C o m p le tio n o f
th e B u rs t W rite
DQS,
DQS
tW R
WL = RL-1 = 4
DQ
DIN A0 DIN A1 DIN A2 DIN A3
BW543
Figure 30
Example Timing Diagram : Write Operation: RL = 5 (AL = 2, CL = 3), WL = 4, BL = 4
T0
T1
T2
T3
T4
T5
T6
T7
T9
CK, CK
CMD
P ost C A S
W R IT E A
NOP
NOP
NOP
NOP
<= tDQSS
NOP
P recha rge
B ank A
A ctiva te
C om pletion of
the B urst W rite
DQS,
DQS
tW R
WL = RL-1 = 2
DQ
NOP
tR P
DIN A0 DIN A1 DIN A2 DIN A3
BW322
Figure 31
Data Sheet
Write Operation Example: RL = 3 (AL = 0, CL = 3), WL = 2, BL = 4
43
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
T4
T5
T6
T7
T9
T8
CK, CK
W rite to R ea d = (C L - 1)+ B L/2 + tW T R (2) = 6
CMD
NOP
NOP
P o st C A S
READ A
NOP
NOP
NOP
NOP
NOP
NOP
DQS,
DQS
DQ
C L= 3
A L= 2
tW T R
W L = RL - 1 = 4
DIN A0 DIN A1 DIN A2 DIN A3
R L= 5
BWBR
Write followed by Burst Read Example: RL = 5 (AL = 2, CL = 3), WL = 4, tWTR = 2, BL = 4
Figure 32
The minimum number of clocks from the write command to the read command is (CL - 1) +BL/2 + tWTR, where tWTR
is the write-to-read turn-around time tWTR expressed in clock cycles. The tWTR is not a write recovery time (tWR) but
the time required to transfer 4 bit write data from the input buffer into sense amplifiers in the array.
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
P ost C A S
W R IT E A
NOP
P o st C A S
W R IT E B
NOP
NOP
NOP
NOP
NOP
NOP
DQS,
DQS
W L = RL - 1 = 4
DQ
DIN A0 DIN A1 DIN A2 DIN A3 DIN B0 DIN B1 DIN B2 DIN B3
SBR
Figure 33
Seamless Write Operation Example 1: RL = 5, WL = 4, BL = 4
The seamless write operation is supported by enabling a write command every BL/2 number of clocks. This
operation is allowed regardless of same or different banks as long as the banks are activated.
Data Sheet
44
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
W R IT E A
NOP
NOP
NOP
NOP
W R IT E B
NOP
NOP
NOP
DQS,
DQS
W L = RL - 1 = 2
DQ
DIN A0 DIN A1 DIN A2 DIN A3 DIN A4 DIN A5 DIN A5 DIN A7 DIN B0 DIN B1 DIN B2 DIN B3 DIN B4 DIN B5 DIN B6 DIN B7
SBW_BL8
Figure 34
Seamless Write Operation Example 2: RL = 3, WL = 2, BL = 8, non interrupting
The seamless, non interrupting 8-bit burst write operation is supported by enabling a write command at every BL/2
number of clocks. This operation is allowed regardless of same or different banks as long as the banks are
activated.
2.6.5
Write Data Mask
One write data mask input (DM) for ×4 and ×8
components and two write data mask inputs (LDM,
UDM) for ×16 components are supported on DDR2
SDRAM’s, consistent with the implementation on DDR
SDRAM’s. It has identical timings on write operations
as the data bits, and though used in a uni-directional
manner, is internally loaded identically to data bits to
insure matched system timing. Data mask is not used
during read cycles. If DM is high during a write burst
coincident with the write data, the write data bit is not
written to the memory. For ×8 components the DM
function is disabled, when RDQS / RDQS are enabled
by EMRS(1).
t DQSH
t DQSL
DQS
DQS,
DQS
DQS
t WPST
t WPRE
DQ
D
D
t DS
DM
D
D
Mask
Mask
t DH
Mask
Mask
don't care
Figure 35
Data Sheet
Write Data Mask Timing
45
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
T4
T5
T6
T7
T9
CK, CK
CMD
W R IT E A
NOP
NOP
NOP
NOP
NOP
NOP
P re ch a rg e
B ank A
A ctiva te
<= tDQSS
DQS,
DQS
WL = RL-1 = 2
DQ
tW R
tR P
DIN A0 DIN A1 DIN A2 DIN A3
DM
DM
Figure 36
Write Operation with Data Mask Example: RL = 3 (AL = 0, CL = 3), WL = 2, tWR = 3, BL = 4
2.6.6
Burst Interruption
6. Read or Write burst with Auto-Precharge enabled is
not allowed to be interrupted.
7. Read burst interruption is allowed by a Read with
Auto-Precharge command.
8. Write burst interruption is allowed by a Write with
Auto-Precharge command.
9. All command timings are referenced to burst length
set in the mode register. They are not referenced to
the actual burst. For example, Minimum Read to
Precharge timing is AL + BL/2 where BL is the burst
length set in the mode register and not the actual
burst (which is shorter because of interrupt).
Minimum Write to Precharge timing is WL + BL/ 2 +
tWR, where tWR starts with the rising clock after the
un-interrupted burst end and not form the end of the
actual burst end.
Interruption of a read or write burst is prohibited for
burst length of 4 and only allowed for burst length of 8
under the following conditions:
1. A Read Burst of 8 can only be interrupted by
another Read command. Read burst interruption by
a Write or Precharge Command is prohibited.
2. A Write Burst of 8 can only be interrupted by
another Write command. Write burst interruption by
a Read or Precharge Command is prohibited.
3. Read burst interrupt must occur exactly two clocks
after the previous Read command. Any other Read
burst interrupt timings are prohibited.
4. Write burst interrupt must occur exactly two clocks
after the previous Write command. Any other Read
burst interrupt timings are prohibited.
5. Read or Write burst interruption is allowed to any
bank inside the DDR2 SDRAM.
Data Sheet
46
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
READ A
NOP
READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS,
DQS
DQ
Dout A0 Dout A1
Dout A2 Dout A3 Dout B0 Dout B1
Dout B2 Dout B3 Dout B4 Dout B5
Dout B6 Dout B7
RBI
Figure 37
Read Interrupt Timing Example 1: (CL = 3, AL = 0, RL = 3, BL = 8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
C K, C K
CMD
NOP
W R IT E A
NOP
W R IT E B
NOP
NOP
NOP
NOP
NOP
NOP
DQS,
DQS
DQ
Din A0
Din A1
Din A2
Din A3
Din B0
Din B1
Din B2
Din B3
Dout B4 Din B5
Din B6
Din B7
WBI
Figure 38
Data Sheet
Write Interrupt Timing Example 2: (CL = 3, AL = 0, WL = 2, BL = 8)
47
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.7
Precharge Command
charge Command can be used to precharge each bank
independently or all banks simultaneously. Three
address bits A10, BA0 and BA1 are used to define
which bank to precharge when the command is issued.
The Precharge Command is used to precharge or close
a bank that has been activated. The Precharge
Command is triggered when CS, RAS and WE are low
and CAS is high at the rising edge of the clock. The PreTable 13
Bank Selection for Precharge by Address Bits
A10
BA0
BA1
Precharge Bank(s)
LOW
LOW
LOW
Bank 0 only
LOW
LOW
HIGH
Bank 1 only
LOW
HIGH
LOW
Bank 2 only
LOW
HIGH
HIGH
Bank 3 only
HIGH
Don’t Care
Don’t Care
all banks
Note: The bank address assignment is the same for activating and precharging a specific bank.
2.7.1
Read Operation Followed by a Precharge
The following rules apply as long as the tRTP timing
parameter - Internal Read to Precharge Command
delay time - is less or equal two clocks, which is the
case for operating frequencies less or equal 266 Mhz
(DDR2 400 and 533 speed sorts):
A new bank active command may be issued to the
same bank if the following two conditions are satisfied
simultaneously:
1. The RAS precharge time (tRP) has been satisfied
from the clock at which the precharge begins.
2. The RAS cycle time (tRC, min) from the previous bank
activation has been satisfied.
Minimum Read to Precharge command spacing to the
same bank = AL + BL/2 clocks. For the earliest possible
precharge, the Precharge command may be issued on
the rising edge which is “Additive Latency (AL) + BL/2
clocks” after a Read Command, as long as the
minimum tRAS timing is satisfied.
T0
T1
T2
T3
For operating frequencies higher than 266 MHz, tRTP
becomes > 2 clocks and one additional clock cycle has
to be added for the minimum Read to Precharge
command spacing, which now becomes AL + BL/2 + 1
clocks.
T4
T5
T6
T7
T8
CK, CK
CMD
P ost C A S
READ A
NOP
NOP
P re ch a rg e
NOP
NOP
B ank A
A ctiva te
NOP
NOP
tR P
A L + B L /2 clks
DQS,
DQS
AL = 1
CL = 3
RL = 4
DQ
Dout A0
> = tR A S
Dout A1
Dout A2
Dout A3
CL = 3
> = tR C
> = tR T P
BR-P413
Figure 39
Data Sheet
Read Operation Followed by Precharge Example 1:
RL = 4 (AL = 1, CL = 3), BL = 4, tRTP ≤ 2 clocks
48
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
P ost C A S
READ A
NOP
NOP
NOP
NOP
P re ch a rg e
NOP
NOP
A L + B L /2 clks
B ank A
A ctiva te
tR P
DQS,
DQS
AL = 1
CL = 3
RL = 4
DQ
Dout A0
> = tR A S
Dout A1
Dout A2
Dout A3
Dout A4
Dout A5
Dout A6
Dout A7
CL = 3
> = tR C
> = tR T P
Figure 40
BR-P413(8)
second 4-bit prefetch
first 4-bit prefetch
Read Operation Followed by Precharge Example 2:
RL = 4 (AL = 1, CL = 3), BL = 8, tRTP ≤ 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
P o st C A S
READ A
NOP
NOP
NOP
NOP
P re ch a rg e
A L + B L /2 clks
NOP
B ank A
A ctiva te
NOP
tR P
DQS,
DQS
CL = 3
AL = 2
RL = 5
DQ
Dout A0
> = tR A S
Dout A1
Dout A2
Dout A3
CL = 3
> = tR C
> = tR T P
Figure 41
Data Sheet
BR-P523
Read Operation Followed by Precharge Example 3:
RL = 5 (AL = 2, CL = 3), BL = 4, tRTP ≤ 2 clocks
49
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
P ost C A S
READ A
NOP
NOP
NOP
P re ch a rg e
A
NOP
NOP
A L + B L /2 clo cks
NOP
B ank A
A ctiva te
tR P
DQS,
DQS
AL = 2
CL = 4
RL = 6
DQ
Dout A0
> = tR A S
Dout A1
Dout A2
Dout A3
CL = 4
> = tR C
> = tR T P
Figure 42
BR-P624
Read Operation Followed by Precharge Example 4:
RL = 6, (AL = 2, CL = 4), BL = 4, tRTP ≤ 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
READ A
NOP
NOP
NOP
NOP
P re ch a rg e
NOP
NOP
A L + B L /2 clks + 1
B ank A
A ctiva te
tR P
DQS,
DQS
CL = 4
RL = 4
DQ
Dout A0
Dout A1
Dout A2
Dout A3
Dout A4
Dout A5
Dout A6
Dout A7
> = tR A S
> = tR T P
first 4-bit prefetch
Figure 43
Data Sheet
BR-P404(8)
second 4-bit prefetch
Read Operation Followed by Precharge Example 5:
RL = 4, (AL = 0, CL = 4), BL = 8, tRTP > 2 clocks
50
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.7.2
Write followed by Precharge
to the Precharge command. No Precharge command
should be issued prior to the tWR delay, as DDR2
SDRAM does not support any burst interrupt by a
Precharge command. tWR is an analog timing
parameter (see Chapter 7) and is not the programmed
value for tWR in the MRS.
Minimum Write to Precharge command spacing to the
same bank = WL + BL/2 + tWR. For write cycles, a delay
must be satisfied from the completion of the last burst
write cycle until the Precharge command can be
issued. This delay is known as a write recovery time
(tWR) referenced from the completion of the burst write
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
P ost C A S
W R IT E A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
P re ch a rg e
A
C o m p le tio n o f
th e B u rst W rite
DQS,
DQS
tW R
WL = 3
DQ
DIN A0 DIN A1 DIN A2 DIN A3
BW-P3
Figure 44
Write followed by Precharge Example 1: WL = (RL - 1) = 3, BL = 4, tWR = 3
T0
T1
T2
T3
T4
T5
T6
T7
T9
CK, CK
CMD
P o st C A S
W R IT E A
NOP
NOP
NOP
NOP
NOP
NOP
P re ch a rg e
A
C o m p le tio n o f
th e B u rst W rite
DQS,
DQS
tW R
WL = 4
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
BW-P4
Figure 45
Data Sheet
Write followed by Precharge Example 2: WL = (RL - 1) = 4, BL = 4, tWR = 3
51
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.8
Auto-Precharge Operation
Auto-Precharge is also implemented for Write
Commands.The precharge operation engaged by the
Auto-Precharge command will not begin until the last
data of the write burst sequence is properly stored in
the memory array. This feature allows the precharge
operation to be partially or completely hidden during
burst read cycles (dependent upon CAS Latency) thus
improving system performance for random data
access.
Before a new row in an active bank can be opened, the
active bank must be precharged using either the Precharge Command or the Auto-Precharge function.
When a Read or a Write Command is given to the
DDR2 SDRAM, the CAS timing accepts one extra
address, column address A10, to allow the active bank
to automatically begin precharge at the earliest
possible moment during the burst read or write cycle. If
A10 is low when the Read or Write Command is issued,
then the Auto-Precharge function is enabled.
The RAS lockout circuit internally delays the precharge
operation until the array restore operation has been
completed so that the Auto-Precharge command may
be issued with any read or write command.
During Auto-Precharge, a Read Command will execute
as normal with the exception that the active bank will
begin to precharge internally on the rising edge which
is CAS Latency (CL) clock cycles before the end of the
read burst.
2.8.1
Read with Auto-Precharge
becomes AL + tRTP + tRP. For BL = 8 the time from Read
with Auto-Precharge to the next Activate command is
AL + 2 + tRTP + tRP. Note that (tRTP + tRP) has to be
rounded up to the next integer value. In any event
internal precharge does not start earlier than two clocks
after the last 4-bit prefetch.
If A10 is high when a Read Command is issued, the
Read with Auto-Precharge function is engaged. The
DDR2 SDRAM starts an Auto-Precharge operation on
the rising edge which is (AL + BL/2) cycles later from
the Read with AP command if tRAS(min) and tRTP are
satisfied. If tRAS(min) is not satisfied at the edge, the start
point of Auto-Precharge operation will be delayed until
tRAS(min) is satisfied. If tRTPmin is not satisfied at the edge,
the start point of Auto-Precharge operation will be
delayed until tRTPmin is satisfied.
A new bank active (command) may be issued to the
same bank if the following two conditions are satisfied
simultaneously:
1. The RAS precharge time (tRP) has been satisfied
from the clock at which the Auto-Precharge begins.
2. The RAS cycle time (tRC) from the previous bank
activation has been satisfied.
In case the internal precharge is pushed out by tRTP, tRP
starts at the point where the internal precharge
happens (not at the next rising clock edge after this
event). So for BL = 4 the minimum time from Read with
Auto-Precharge to the next Activate command
Data Sheet
52
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
P o ste d C A S
R E A D w /A P
NOP
NOP
NOP
NOP
NOP
NOP
NOP
B ank
A ctiva te
A10 ="high"
AL + BL/2
A u to -P re ch a rg e B e g in s
DQS,
DQS
AL = 2
CL = 3
tRP
RL = 5
DQ
Dout A0
Dout A1
Dout A2
Dout A3
tRAS
tRCmin.
BR-AP5231
Figure 46
Read with Auto-Precharge Example 1, followed by an Activation to the Same Bank (tRC Limit):
RL = 5 (AL = 2, CL = 3), BL = 4, tRTP ≤ 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
P o ste d C A S
R E A D w /A P
NOP
NOP
NOP
NOP
NOP
B ank
A ctiva te
NOP
NOP
A10 ="high"
tRAS(min)
A u to -P re ch a rg e B e g in s
DQS,
DQS
AL = 2
CL = 3
tRP
RL = 5
DQ
Dout A0
Dout A1
Dout A2
Dout A3
tRC
BR-AP5232
Figure 47
Data Sheet
Read with Auto-Precharge Example 2, followed by an Activation to the Same Bank (tRAS Limit):
RL = 5 (AL = 2, CL = 3), BL = 4, tRTP ≤ 2 clocks
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512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
P o ste d C A S
R E A D w /A P
NOP
NOP
NOP
A10 ="high"
NOP
NOP
NOP
AL + BL/2
NOP
B ank
A ctiva te
tRP
A u to -P re ch a rg e B e g in s
DQS,
DQS
AL = 1
CL = 3
RL = 4
DQ
Dout A0
Dout A1
Dout A2
Dout A3 Dout A4
Dout A5
Dout A6
Dout A7
>= tRTP
BR-AP413(8)2
second 4-bit prefetch
first 4-bit prefetch
Figure 48
Read with Auto-Precharge Example 3, followed by an Activation to the Same Bank:
RL = 4 (AL = 1, CL = 3), BL = 8, tRTP ≤ 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK, CK
CMD
P o ste d C A S
R E A D w /A P
A10 ="high"
NOP
NOP
NOP
NOP
NOP
NOP
B ank
A ctiva te
NOP
AL + tRTP + tRP
A u to -P re ch a rg e B e g in s
DQS,
DQS
AL = 1
CL = 3
RL = 4
DQ
Dout A0
Dout A1
Dout A2
Dout A3
tRP
tRTP
BR-AP4133
first 4-bit prefetch
Figure 49
Data Sheet
Read with Auto-Precharge Example 4, followed by an Activation to the Same Bank:
RL = 4 (AL = 1, CL = 3), BL = 4, tRTP > 2 clocks
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.8.2
Write with Auto-Precharge
1. The last data-in to bank activate delay time (tDAL =
WR + tRP) has been satisfied.
2. The RAS cycle time (tRC) from the previous bank
activation has been satisfied.
If A10 is high when a Write Command is issued, the
Write with Auto-Precharge function is engaged. The
DDR2 SDRAM automatically begins precharge
operation after the completion of the write burst plus the
write recovery time delay (tWR), programmed in the
MRS register, as long as tRAS is satisfied. The bank
undergoing Auto-Precharge from the completion of the
write burst may be reactivated if the following two
conditions are satisfied.
T0
T1
T2
In DDR2 SDRAM’s the write recovery time delay (tWR)
has to be programmed into the MRS mode register. As
long as the analog tWR timing parameter is not violated,
WR can be programmed between 2 and 6 clock cycles.
Minimum Write to Activate command spacing to the
same bank = WL + BL/2 + tDAL.
T3
T4
T5
T6
T7
CK, CK
W R IT E
w /A P
CMD
NOP
NOP
A10 ="high"
NOP
NOP
NOP
NOP
Completion of the Burst Write
B ank A
A ctiva te
A u to -P re ch a rg e B e g in s
DQS,
DQS
WR
WL = RL-1 = 2
DQ
NOP
tRP
tDAL
DIN A0 DIN A1 DIN A2 DIN A3
tRCmin.
>=tRASmin.
BW-AP223
Write with Auto-Precharge Example 1 (tRC Limit): WL = 2, tDAL = 6 (WR = 3, tRP = 3), BL = 4
Figure 50
T0
T3
T4
T5
T6
NOP
NOP
NOP
T8
T7
T9
T12
CK, CK
P o s te d C A S
W R IT E w /A P
CMD
A10 ="high"
NOP
NOP
NOP
NOP
B ank A
A ctiva te
Completion of the Burst Write
A u to -P re ch a rg e B e g in s
DQS,
DQS
WR
WL = RL-1 = 4
tRP
tDAL
DQ
DIN A0 DIN A1 DIN A2 DIN A3
>=tRC
>=tRAS
BW-AP423
Figure 51
Data Sheet
Write with Auto-Precharge Example 2 (WR + tRP Limit): WL = 4, tDAL = 6 (WR = 3, tRP = 3), BL = 4
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.8.3
Read or Write to Precharge Command Spacing Summary
The following table summarizes the minimum
command delays between Read, Read w/AP, Write,
Table 14
Write w/AP to the Precharge commands to the same
banks and Precharge-All commands.
Minimum Command Delays
From Command
To Command
Minimum Delay between “From
Command” to “To Command”
Units Notes
READ
PRECHARGE (to same banks as
READ)
AL + BL/2 + max(tRTP, 2) - 2
tCK
1)2)
PRECHARGE-ALL
AL + BL/2 + max(tRTP, 2) - 2
1)2)
PRECHARGE (to same banks as
READ w/AP)
AL + BL/2 + max(tRTP, 2) - 2
tCK
tCK
PRECHARGE-ALL
AL + BL/2 + max(tRTP, 2) - 2
1)2)
PRECHARGE (to same banks as
WRITE)
WL + BL/2 + tWR
tCK
tCK
PRECHARGE-ALL
WL + BL/2 + tWR
2)3)
PRECHARGE (to same banks as
WRITE w/AP)
WL + BL/2 + WR
tCK
tCK
PRECHARGE-ALL
WL + BL/2 + WR
2)
PRECHARGE (to same banks as
PRECHARGE)
1
tCK
tCK
PRECHARGE-ALL
1
tCK
tCK
tCK
2)
READ w/AP
WRITE
WRITE w/AP
PRECHARGE
PRECHARGE-ALL PRECHARGE
1
PRECHARGE-ALL
1
1)2)
2)3)
2)
2)
2)
2)
1) RU{tRTP(ns) / tCK(ns)} must be used, where RU stands for “Round Up”
2) For a given bank, the precharge period should be counted from the latest precharge command, either one bank precharge or prechargeall, issued to that bank. The precharge period is satisfied after tRP or tRP, all depending on the latest precharge command issued to that bank
3) RU{tWR(ns) / tCK(ns)} must be used, where RU stands for “Round Up”
Data Sheet
56
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.8.4
Concurrent Auto-Precharge
The minimum delay from a Read or Write command
with Auto-Precharge enabled, to a command to a
different bank, is summarized in Table 15. As defined,
the WL = RL - 1 for DDR2 devices which allows the
command gap and corresponding data gaps to be
minimized.
DDR2 devices support the “Concurrent AutoPrecharge” feature. A Read with Auto-Precharge
enabled, or a Write with Auto-Precharge enabled, may
be followed by any command to the other bank, as long
as that command does not interrupt the read or write
data transfer, and all other related limitations (e.g.
contention between Read data and Write data must be
avoided externally and on the internal data bus.
Table 15
Command Delay Table
From Command To Command (different bank,
non-interrupting command)
Minimum Delay with Concurrent Auto- Units
Precharge Support
Note
WRITE w/AP
Read or Read w/AP
(CL -1) + (BL/2) + tWTR
1)
Write or Write w/AP
BL/2
Precharge or Activate
1
Read or Read w/AP
BL/2
Write or Write w/AP
BL/2 + 2
Precharge or Activate
1
Read w/AP
tCK
tCK
tCK
tCK
tCK
tCK
2)
2)
1) RU{tWTR(ns)/tCK(ns)} must be used where RU stands for “Round Up”
2) This rule only applies to a selective Precharge command to another banks, a Precharge-All command is illegal
2.9
Refresh
DDR2 SDRAM requires a refresh of all rows in any rolling 64 ms interval. The necessary refresh can be generated
in one of two ways: by explicit Auto-Refresh commands or by an internally timed Self-Refresh mode.
2.9.1
Auto-Refresh Command
external address bus is required once this cycle has
started.
Auto-Refresh is used during normal operation of the
DDR2 SDRAM’s. This command is non persistent, so it
must be issued each time a refresh is required. The
refresh addressing is generated by the internal refresh
controller. This makes the address bits ”don’t care”
during an Auto-Refresh command. The DDR2 SDRAM
requires Auto-Refresh cycles at an average periodic
interval of tREF(maximum).
When the refresh cycle has completed, all banks of the
SDRAM will be in the precharged (idle) state. A delay
between the Auto-Refresh Command and the next
Activate Command or subsequent Auto-Refresh
Command must be greater than or equal to the AutoRefresh cycle time (tRFC).
To allow for improved efficiency in scheduling and
switching between tasks, some flexibility in the
absolute refresh interval is provided. A maximum of
eight Auto-Refresh commands can be posted to any
given DDR2 SDRAM, meaning that the maximum
absolute interval between any Auto-Refresh command
and the next Auto-Refresh command is 9 × tREFI.
When CS, RAS and CAS are held low and WE high at
the rising edge of the clock, the chip enters the AutoRefresh mode. All banks of the SDRAM must be
precharged and idle for a minimum of the precharge
time (tRP) before the Auto-Refresh Command can be
applied. An internal address counter supplies the
addresses during the refresh cycle. No control of the
Data Sheet
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
CK, CK
"high"
CKE
CMD
P re ch a rg e
NOP
> = t RFC
> = t RFC
> = tRP
NOP
AUTO
REFRESH
NOP
AUTO
REFRESH
NOP
NOP
ANY
AR
Figure 52
Auto Refresh Timing
2.9.2
Self-Refresh Command
The Self-Refresh command can be used to retain data,
even if the rest of the system is powered down. When
in the Self-Refresh mode, the DDR2 SDRAM retains
data without external clocking. The DDR2 SDRAM
device has a built-in timer to accommodate SelfRefresh operation. The Self-Refresh Command is
defined by having CS, RAS, CAS and CKE held low
with WE high at the rising edge of the clock. ODT must
be turned off before issuing Self Refresh command, by
either driving ODT pin low or using EMRS(1)
command. Once the command is registered, CKE must
be held low to keep the device in Self-Refresh mode.
The DLL is automatically disabled upon entering Self
Refresh and is automatically enabled upon exiting Self
Refresh. When the DDR2 SDRAM has entered SelfRefresh mode all of the external control signals, except
CKE, are “don’t care”. The DRAM initiates a minimum
of one Auto Refresh command internally within tCKE
period once it enters Self Refresh mode. The clock is
internally disabled during Self-Refresh Operation to
save power. The minimum time that the DDR2 SDRAM
must remain in Self Refresh mode is tCKE. The user may
change the external clock frequency or halt the external
Data Sheet
clock one clock after Self-Refresh entry is registered,
however, the clock must be restarted and stable before
the device can exit Self-Refresh operation.
The procedure for exiting Self Refresh requires a
sequence of commands. First, the clock must be stable
prior to CKE going back HIGH. Once Self-Refresh Exit
command is registered, a delay of at least tXSNR must
be satisfied before a valid command can be issued to
the device to allow for any internal refresh in progress.
CKE must remain high for the entire Self-Refresh exit
period tXSRD for proper operation. Upon exit from Self
Refresh, the DDR2 SDRAM can be put back into Self
Refresh mode after tXSNR expires. NOP or deselect
commands must be registered on each positive clock
edge during the Self-Refresh exit interval tXSNR. ODT
should be turned off during tXSNR.
The use of Self Refresh mode introduces the possibility
that an internally timed refresh event can be missed
when CKE is raised for exit from Self Refresh mode.
Upon exit from Self Refresh, the DDR2 SDRAM
requires a minimum of one extra auto refresh command
before it is put back into Self Refresh Mode.
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T4
T3
T5
Tm
Tn
Tr
CK/CK
tRP
tis
tis
tCKE
CKE
tis
tAOFD
>=tXSRD
>= tXSNR
ODT
Self Refresh
Entry
CMD
NOP
CK/CK may
be halted
Figure 53
Non-Read
Command
Read
Command
CK/CK must
be stable
Self Refresh Timing
Note:
1. Device must be in the “All banks idle” state before
entering Self Refresh mode.
2. tXSRD (≥ 200 tCK) has to be satisfied for a Read or a Read
3. tXSNR has to be satisfied for any command except a
Read or a Read with Auto-Precharge command
4. Since CKE is an SSTL input, VREF must be
maintained during Self Refresh.
with Auto-Precharge command.
2.10
Power-Down
referred as “standard active power-down mode” and a
fast power-down exit timing defined by the tXARD timing
parameter can be used. When A12 is set to “high” this
mode is referred as a power saving “low power active
power-down mode”. This mode takes longer to exit
from the power-down mode and the tXARDS timing
parameter has to be satisfied.
Power-down is synchronously entered when CKE is
registered low, along with NOP or Deselect command.
CKE is not allowed to go low while mode register or
extended mode register command time, or read or write
operation is in progress. CKE is allowed to go low while
any other operation such as row activation, Precharge,
Auto-Precharge or Auto-Refresh is in progress, but
power-down IDD specification will not be applied until
finishing those operations.
Entering power-down deactivates the input and output
buffers, excluding CK, CK, ODT and CKE. Also the DLL
is disabled upon entering Precharge Power-down or
slow exit active power-down, but the DLL is kept
enabled during fast exit active power-down. In powerdown mode, CKE low and a stable clock signal must be
maintained at the inputs of the DDR2 SDRAM, and all
other input signals are “Don’t Care”. Power-down
duration is limited by 9 times tREFI of the device.
The DLL should be in a locked state when power-down
is entered. Otherwise DLL should be reset after exiting
power-down mode for proper read operation. DRAM
design guarantees it’s DLL in a locked state with any
CKE intensive operations as long as DRAM controller
complies with DRAM specifications.
If power-down occurs when all banks are precharged,
this mode is referred to as Precharge Power-down; if
power-down occurs when there is a row active in any
bank, this mode is referred to as Active Power-down.
For Active Power-down two different power saving
modes can be selected within the MRS register,
address bit A12. When A12 is set to “low” this mode is
Data Sheet
The power-down state is synchronously exited when
CKE is registered high (along with a NOP or Deselect
command). A valid, executable command can be
applied with power-down exit latency, tXP, tXARD or
tXARDS, after CKE goes high. Power-down exit latencies
are defined in Table 40.
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
Power-Down Entry
Active Power-down mode entry is prohibited as long as
a Write Burst and the internal write recovery is in
progress. In case of a write command, active powerdown mode entry is allowed when WL + BL/2 + tWTR is
satisfied.
Active Power-down mode can be entered after an
Activate command. Precharge Power-down mode can
be entered after a Precharge, Precharge-All or internal
precharge command. It is also allowed to enter powermode after an Auto-Refresh command or MRS /
EMRS(1) command when tMRD is satisfied.
In case of a write command with Auto-Precharge,
Power-down mode entry is allowed after the internal
precharge command has been executed, which is WL
+ BL/2 + WR starting from the write with AutoPrecharge command. In this case the DDR2 SDRAM
enters the Precharge Power-down mode.
Active Power-down mode entry is prohibited as long as
a Read Burst is in progress, meaning CKE should be
kept high until the burst operation is finished. Therefore
Active Power-Down mode entry after a Read or Read
with Auto-Precharge command is allowed after
RL + BL/2 is satisfied.
T0
T1
T2
Tn
Tn+1
Tn+2
CK, CK
CM D
NOP
A ctivate
NOP
V alid
C om m and
NOP
NOP
NOP
tIS
CKE
tIS
tXARD or
tXARDS *)
Act.PD 0
Active
Power-Down
Exit
Active
Power-Down
Entry
Figure 54
Active Power-Down Mode Entry and Exit after an Activate Command
Note: Active Power-Down mode exit timing tXARD (“fast exit”) or tXARDS (“slow exit”) depends on the programmed
state in the MRS, address bit A12.
T0
T1
T2
T3
T4
T5
T6
T7
T8
Tn
Tn+1
Tn+2
CK, CK
CMD
READ
R E A D w /A P
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
V a lid
C om m a nd
tIS
CKE
RL + BL/2
tIS
DQ S,
DQS
AL = 1
DQ
tXARD or
tXARDS *)
CL = 3
RL = 4
Dout A0 Dout A1
Dout A2
Dout A3
Active
Power-Down
Entry
Figure 55
Active
Power-Down
Exit
Act.PD 1
Active Power-Down Mode Entry and Exit Example after a Read Command:
RL = 4 (AL = 1, CL =3), BL = 4
Note: Active Power-Down mode exit timing tXARD (“fast exit”) or tXARDS (“slow exit”) depends on the programmed
state in the MRS, address bit A12.
Data Sheet
60
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
T4
T5
T6
Tn
T7
Tn+1
Tn+2
CK, CK
CMD
W R IT E
NOP
NOP
NOP
NOP
CKE
NOP
NOP
NOP
NOP
NOP
V alid
C o m m and
NOP
tIS
WL + BL/2 + tWTR
tIS
DQS,
DQS
WL = RL - 1 = 2
DQ
tWTR
tXARD or
tXARDS *)
DIN A0 DIN A1 DIN A2 DIN A3
Active
Power-Down
Entry
Figure 56
Active
Power-Down
Exit
Act.PD 2
Active Power-Down Mode Entry and Exit Example after a Write Command:
WL = 2, tWTR = 2, BL = 4
Note: Active Power-Down mode exit timing tXARD (“fast exit”) or tXARDS (“slow exit”) depends on the programmed
state in the MRS, address bit A12.
T0
T1
T2
T3
T4
T5
T6
Tn
T7
Tn+1
Tn+2
CK, CK
CM D
W R IT E
w /A P
NOP
CKE
NOP
NOP
NOP
NOP
NOP
WL + BL/2 + WR
NOP
tIS
NOP
NOP
V a lid
Com m and
NOP
tIS
DQS,
DQS
WL = RL - 1 = 2
DQ
WR
tXARD or
tXARDS *)
DIN A0 DIN A1 DIN A2 DIN A3
Active
Power-Down
Entry
Figure 57
Active
Power-Down
Exit
Act.PD 3
Active Power-Down Mode Entry and Exit Example after a Write Command with AP:
WL = 2, WR = 3, BL = 4
Note: Active Power-Down mode exit timing tXARD (“fast exit”) or tXARDS (“slow exit”) depends on the programmed
state in the MRS, address bit A12. WR is the programmed value in the MRS mode register.
Data Sheet
61
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
T0
T1
T2
T3
Tn
Tn+1
Tn+2
CK, CK
CMD
NOP
Precharge
NOP
NOP
NOP
NOP
NOP
Valid
Command
NOP
tIS
CKE
tIS
tXP
tRP
Precharge
Power-Down
Entry
Figure 58
Precharge
Power-Down
Exit
Precharge Power Down Mode Entry and Exit
Note: "Precharge" may be an external command or an internal precharge following Write with AP.
T0
T1
T2
T3
T4
Tn
CK, CK
tRFC
Auto
Refresh
CMD
tXP
Valid
Command
CKE
tis
CKE can go low one clock after an Auto-Refresh command
When tRFC expires the DRAM is in Precharge Power-Down Mode
Figure 59
T0
ARPD
Auto-Refresh command to Power-Down entry
T1
T2
T3
T4
T5
T6
T7
CK, CK
CMD
MRS or
EMRS
t MRD
CKE
Enters Precharge Power-Down Mode
Figure 60
Data Sheet
MRS_PD
MRS, EMRS command to Power-Down entry
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.11
Other Commands
2.11.1
No Operation Command
registered when CS is low with RAS, CAS, and WE
held high at the rising edge of the clock. A No Operation
Command will not terminate a previous operation that
is still executing, such as a burst read or write cycle.
The No Operation Command (NOP) should be used in
cases when the SDRAM is in a idle or a wait state. The
purpose of the No Operation Command is to prevent
the SDRAM from registering any unwanted commands
between operations. A No Operation Command is
2.11.2
Deselect Command
The Deselect Command performs the same function as
a No Operation Command. Deselect Command occurs
2.12
when CS is brought high, the RAS, CAS, and WE
signals become don’t care.
Input Clock Frequency Change
satisfied the input clock frequency can be changed. A
stable new clock frequency has to be provided, before
CKE can be changed to a “high” logic level again. After
tXP has been satisfied a DLL RESET command via
EMRS(1) has to be issued. During the following DLL relock period of 200 clock cycles, ODT must remain off.
After the DLL-re-lock period the DRAM is ready to
operate with the new clock frequency.
During operation the DRAM input clock frequency can
be changed under the following conditions:
•
•
During Self-Refresh operation
DRAM is in Precharge Power-down mode and ODT
is completely turned off.
The DDR2-SDRAM has to be in Precharged Powerdown mode and idle. ODT must be already turned off
and CKE must be at a logic “low” state. After a minimum
of two clock cycles after tRP and tAOFD have been
T0
T1
T2
T3
T4
Tx
Tx+1
Ty
Ty+1
Ty+2
Tz
Ty+3
CK, CK
CMD
NOP
NOP
NO P
NOP
NOP
NOP
NOP
NOP
NO P
D LL
RESET
NO P
V alid
C o m m a nd
CKE
tRP
tAOFD
tXP
Minimum 2 clocks
required before
changing the frequency
Frequency Change
occurs here
200 clocks
Stable new clock
before power-down exit
ODT is off during
DLL RESET
Frequ.Ch.
Figure 61
Data Sheet
Input Frequency Change Example during Precharge Power-Down mode
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.13
Asynchronous CKE Low Reset Event
contents of the memory array. If this event occurs, the
memory controller must satisfy a time delay (tdelay)
before turning off the clocks. Stable clocks must exist at
the input of DRAM before CKE is raised “high” again.
The DRAM must be fully re-initialized as described the
initialization sequence (section 2.2.1, step 4 thru 13).
DRAM is ready for normal operation after the
initialization sequence. See Chapter 7.
In a given system, Asynchronous Reset event can
occur at any time without prior knowledge. In this
situation, memory controller is forced to drop CKE
asynchronously low, immediately interrupting any valid
operation. DRAM requires CKE to be maintained “high”
for all valid operations as defined in this data sheet. If
CKE asynchronously drops “low” during any valid
operation, the DRAM is not guaranteed to preserve the
stable clocks
CK, CK
tdelay
CKE
CKE drops low due to an
asynchronous reset event
Figure 62
Data Sheet
Clocks can be turned off after
this point
Asynchronous Low Reset Event
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HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Truth Tables
3
Truth Tables
Table 16
Command Truth Table
Function
CS RAS CAS WE BA0 A[13:11] A10 A[9:0]
BA1
Previous Current
Cycle
Cycle
CKE
Notes
1)2)3)4)
5)
(Extended) Mode
Register Set
H
H
L
L
L
L
BA
OP Code
Auto-Refresh
H
H
L
L
L
H
X
X
X
X
Self-Refresh Entry
H
L
L
L
L
H
X
X
X
X
6)
Self-Refresh Exit
L
H
H
X
X
X
X
X
X
X
6)
Single Bank Precharge H
H
L
L
H
L
BA
X
L
X
5)
Precharge all Banks
H
H
L
L
H
L
X
X
H
X
Bank Activate
H
H
L
L
H
H
BA
Row Address
Write
H
H
L
H
L
L
BA
Column
L
Column
5)7)
Write with AutoPrecharge
H
H
L
H
L
L
BA
Column
H
Column
5)7)
Read
H
H
L
H
L
H
BA
Column
L
Column
5)7)
Read with AutoPrecharge
H
H
L
H
L
H
BA
Column
H
Column
5)7)
No Operation
H
X
L
H
H
H
X
X
X
X
Device Deselect
H
X
H
X
X
X
X
X
X
X
Power Down Entry
H
L
H
X
X
X
X
X
X
X
8)
L
H
H
H
H
X
X
X
X
X
X
X
4)8)
L
H
H
H
Power Down Exit
L
H
5)
1) All DDR2 SDRAM commands are defined by states of CS, WE, RAS, CAS, and CKE at the rising edge of the clock.
2) The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
3) “X” means “H or L (but a defined logic level)”.
4) Operation that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
5) Bank addresses (BAx) determine which bank is to be operated upon. For (E)MRS BAx selects an (Extended) Mode
Register.
6)
VREF must be maintained during Self refresh Operation
7) Burst reads or writes at BL = 4 cannot be terminated.
8) The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the
refresh requirements outlined in Chapter 2.9.
Data Sheet
65
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Truth Tables
Table 17
Clock Enable (CKE) Truth Table for Synchronous Transitions
Current State1) CKE
Command (N)2) 3)
Action (N)2)
Notes4)5)
Maintain Power-Down
7)8)11)
Previous Cycle6) Current Cycle6)
RAS, CAS, WE, CS
(N-1)
(N)
Power-Down
L
L
X
L
H
DESELECT or NOP Power-Down Exit
9)10)11)7)
L
L
X
11)8)12)
L
H
DESELECT or NOP Self Refresh Exit
9)13)14)12)
Bank(s)
Active
H
L
DESELECT or NOP Active Power-Down Entry
9)10)15)11)7)
All Banks Idle
H
L
DESELECT or NOP Precharge Power-Down
Entry
9)10)15)11)
H
L
AUTOREFRESH
16)14)11)7)
Any State other H
than
listed above
H
Refer to the Command Truth Table
Self Refresh
Maintain Self Refresh
Self Refresh Entry
17)
1) Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
2) Command (N) is the command registered at clock edge N, and Action (N) is a result of Command (N)
3) The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
4) CKE must be maintained high while the device is in OCD calibration mode.
5) Operation that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
6) CKE (N) is the logic state of CKE at clock edge N; CKE (N-1) was the state of CKE at the previous clock edge.
7) The Power-Down Mode does not perform any refresh operations. The duration of Power-Down Mode is therefor limited by
the refresh requirements
8) “X” means “don’t care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven
high or low in Power Down if the ODT function is enabled (Bit A2 or A6 set to “1” in EMRS(1)).
9) All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
10) Valid commands for Power-Down Entry and Exit are NOP and DESELECT only.
11) Minimum CKE high time is 3 clocks, minimum CKE low time is 3 clocks.
12) VREF must be maintained during Self Refreh Operation
13) On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR
period. Read commands may be issued only after tXSRD (200 clocks) is satisfied.
14) Valid commands for Self Refresh Exit are NOP and DESELCT only.
15) Power-Down and Self Refresh can not be entered while Read or Write operations, (Extended) mode Register operations,
Precharge or Refresh operations are in progress. See Chapter 2.10 and Chapter 2.9.2 for a detailed list of restrictions.
16) Self Refresh mode can only be entered from the All Banks Idle state.
17) Must be a legal command as defined in the Command Truth Table.
Table 18
Data Mask (DM) Truth Table
Name (Function)
DM
DQs
Notes
Write Enable
L
Valid
1)
Write Inhibit
H
X
1)
1)
Used to mask write data; provided coincident with the corresponding data.
Data Sheet
66
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Operating Conditions
4
Operating Conditions
Table 19
Absolute Maximum Ratings
Symbol
Parameter
VDD
VDDQ
VDDL
VIN, VOUT
TSTG
Rating
Units
Notes
Voltage on VDD pin relative to VSS
-1.0 to +2.3
V
1)
Voltage on VDDQ pin relative to VSS
-0.5 to +2.3
V
1)
Voltage on VDDL pin relative to VSS
-0.5 to +2.3
V
1)
Voltage on any pin relative to VSS
-0.5 to +2.3
V
1)
Storage Temperature
-55 to +100
°C
1)
1) Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Table 20
DRAM Component Operating Temperature Range
Symbol
Parameter
TOPER
Operating Temperature
Rating
Units
Notes
0 to 95
o
1)2)3)4)
C
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM. For measurement conditions,
please refer to the JEDEC document JESD51-2.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation,
the DRAM case temperature must be maintained between 0 - 95 oC under all other specification parameters.
3) Above 85 oC case temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs.
4) Self-Refresh period is hard-coded in the chip and therefore it is imperative that the system ensures the DRAM is below
85oC case temperature before initiating self-refresh operation.
Data Sheet
67
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
5
AC & DC Operating Conditions
5.1
DC Operating Conditions
Table 21
Recommended DC Operating Conditions (SSTL_18)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
VDDDL
VDDQ
VREF
VTT
Supply Voltage
1.7
1.8
1.9
V
1)
Supply Voltage for DLL
1.7
1.8
1.9
V
1)
Supply Voltage for Output
1.7
1.8
1.9
V
1)
Input Reference Voltage
0.49 × VDDQ
0.5 × VDDQ
0.51 × VDDQ
V
2)3)
Termination Voltage
VREF – 0.04
VREF
VREF + 0.04
V
4)
VDDQ tracks with VDD, VDDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
2) The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
expected to be about 0.5 × VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
3) Peak to peak ac noise on VREF may not exceed ± 2% VREF (dc)
4) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal
to VREF, and must track variations in die dc level of VREF.
1)
Table 22
ODT DC Electrical Characteristics
Parameter / Condition
Symbol
Min.
Nom.
Max.
Units
Notes
Termination resistor impedance value for
EMRS(1)(A6,A2)= 0,1
Rtt1(eff)
60
75
90
Ω
1)
Termination resistor impedance value for
EMRS(1)(A6,A2)=1,0
Rtt2(eff)
120
150
180
Ω
1)
Deviation of VM with respect to VDDQ / 2
delta VM
–6.00
—
+ 6.00
%
2)
1)
Measurement Definition for Rtt(eff): Apply VIH(ac) and VIL(ac) to test pin separately, then measure current I(VIHac) and I(VILac)
respectively. Rtt(eff) = (VIH(ac) – VIL(ac)) /(I(VIHac) – I(VILac)).
2) Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load: delta VM =((2 x VM / VDDQ) – 1) x
100%
Table 23
Input and Output Leakage Currents
Symbol
Parameter / Condition
Min.
Max.
Units
Notes
IIL
Input Leakage Current; any input 0 V < VIN < VDD
–2
+2
µA
1)
IOL
Output Leakage Current; 0 V < VOUT < VDDQ
–5
+5
µA
2)
1) all other pins not under test = 0 V
2) DQ’s, DQS, DQS and ODT are disabled
Data Sheet
68
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
5.2
DC & AC Logic Input Levels
relative to the rising or falling edges of DQS crossing at
DDR2 SDRAM pin timing are specified for either single
ended or differential mode depending on the setting of
the EMRS(1) “Enable DQS” mode bit; timing
advantages of differential mode are realized in system
design. The method by which the DDR2 SDRAM pin
timing are measured is mode dependent. In single
ended mode, timing relationships are measured
Table 24
VREF. In differential mode, these timing relationships
are measured relative to the crosspoint of DQS and its
complement, DQS. This distinction in timing methods is
verified by design and characterization but not subject
to production test. In single ended mode, the DQS (and
RDQS) signals are internally disabled and don’t care.
Single-ended DC & AC Logic Input Levels
Symbol
Parameter
Min.
Max.
Units
VIH(dc)
VIL(dc)
VIH(ac)
VIL(ac)
DC input logic high
VREF + 0.125
V
DC input low
–0.3
VDDQ + 0.3
VREF – 0.125
AC input logic high
VREF + 0.250
—
V
AC input low
—
VREF – 0.250
V
Table 25
Symbol
V
Single-ended AC Input Test Conditions
Condition
Value
Units
Notes
VREF
VSWING(max)
Input reference voltage
0.5 x VDDQ
V
1)2)
Input signal maximum peak to peak swing
1.0
V
1)2)
SLEW
Input signal minimum slew rate
1.0
V / ns
3)4)
1.
1) This timing and slew rate definition is valid for all single-ended signals except tIS, tIH, tDS, tDH.
2) Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test.
3) The input signal minimum slew rate is to be maintained over the range from VIL(dc)max to VIH(ac)min for rising edges and the
range from VIH(dc)min to VIL(ac)max for falling edges as shown in Figure 63
4) AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to VIL(ac
on the negative transitions.
Start of Falling Edge Input Timing
Start of Rising Edge Input Timing
VDDQ
VIH(ac) min
VIH(dc) min
VSWING(MAX)
VREF
VIL(dc) max
VIL(ac) max
delta TF
Falling Slew =
Figure 63
Data Sheet
delta TR
VIH (dc) min - V IL(ac) max
Rising Slew =
delta TF
VSS
VIH(ac) min - VIL(dc) max
delta TR
Single-ended AC Input Test Conditions Diagram
69
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
Table 26
Differential DC and AC Input and Output Logic Levels
Symbol
Parameter
Min.
Max.
Units
VIN(dc)
VID(dc)
VID(ac)
VIX(ac)
DC input signal voltage
–0.3
DC differential input voltage
0.25
AC differential input voltage
0.5
AC differential cross point input
voltage
0.5 × VDDQ – 0.175
VDDQ + 0.3
VDDQ + 0.6
VDDQ + 0.6
0.5 × VDDQ + 0.175
VOX(ac)
AC differential cross point output
voltage
0.5 × VDDQ – 0.125
0.5 × VDDQ + 0.125
1)
2)
3)
4)
5)
Notes
1)
2)
V
3)
V
4)
V
5)
VIN(dc) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS etc.
VID(dc) specifies the input differential voltage VTR– VCP required for switching. The minimum value is equal to VIH(dc) – VIL(dc).
VID(ac) specifies the input differential voltage VTR – VCP required for switching. The minimum value is equal to VIH(ac) – VIL(ac).
The value of VIX(ac) is expected to equal 0.5 × VDDQ of the transmitting device and VIX(ac) is expected to track variations in
VDDQ. VIX(ac) indicates the voltage at which differential input signals must cross.
The value of VOX(ac) is expected to equal 0.5 × VDDQ of the transmitting device and VOX(ac) is expected to track variations in
VDDQ. VOX(ac) indicates the voltage at which differential input signals must cross.
VDDQ
VTR
Crossing Point
VID
VCP
VIX or VOX
VSSQ
SSTL18_3
Figure 64
Data Sheet
Differential DC and AC Input and Output Logic Levels Diagram
70
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
5.3
Output Buffer
Table 27
SSTL_18 Output AC Test Conditions
Symbol
Parameter
SSTL_18 Class II
Units
Notes
VOH
VOL
VOTR
Minimum Required Output Pull-up
VTT + 0.603
VTT – 0.603
0.5 × VDDQ
V
1)
V
1)
V
2)
Maximum Required Output Pull-down
Output Timing Measurement Reference Level
1) SSTL_18 test load for VOH and VOL is different from the referenced load described in Chapter 8.1. The SSTL_18 test load
has a 20 Ohm series resistor additionally to the 25 Ohm termination resistor into VTT. The SSTL_18 definition assumes that
± 335 mV must be developed across the effectively 25 Ohm termination resistor (13.4 mA × 25 Ohm = 335 mV). With an
additional series resistor of 20 Ohm this translates into a minimum requirement of 603 mV swing relative to VTT, at the ouput
device (13.4 mA × 45 Ohm = 603 mV).
2) The VDDQ of the device under test is referenced.
Table 28
Symbol
IOH
IOL
1)
SSTL_18 Output DC Current Drive
Parameter
SSTL_18 Class II
Units
Notes
Output Minimum Source DC Currentl
–13.4
mA
1)2)3)
Output Minimum Sink DC Current
13.4
mA
2)3)4)
VDDQ = 1.7 V; VOUT = 1.42 V. (VOUT–VDDQ) / IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ –
280 mV.
2) The dc value of VREF applied to the receiving device is set to VTT
3) The values of IOH(dc) and IOL(dc) are based on the conditions given in 1) and 4). They are used to test drive current capability
to ensure VIHmin. plus a noise margin and VILmax minus a noise margin are delivered to an SSTL_18 receiver. The actual
current values are derived by shifting the desired driver operating points along 21 Ohm load line to define a convenient
current for measurement.
4)
VDDQ = 1.7 V; VOUT = 280 mV. VOUT / IOL must be less than 21 Ohm for values of VOUT between 0 V and 280 mV.
Table 29
OCD Default Characteristics
Symbol
Description
Min.
Nominal
Max.
Units
Notes
—
Output Impedance
12.6
18
23.4
Ohms
1)2)
—
Pull-up / Pull down mismatch
0
—
4
Ohms
1)2)3)
—
Output Impedance step size
for OCD calibration
0
—
1.5
Ohms
4)
SOUT
Output Slew Rate
1.5
—
5.0
V / ns
1)5)6)7)8)
1)
VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V
2)
Impedance measurement condition for output source dc current: VDDQ = 1.7 V, VOUT = 1420 mV;
(VOUT–VDDQ) / IOH must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ – 280 mV. Impedance
measurement condition for output sink dc current: VDDQ = 1.7 V; VOUT = –280 mV; VOUT / IOL must be less than
23.4 Ohms for values of VOUT between 0 V and 280 mV.
Mismatch is absolute value between pull-up and pull-down, both are measured at same temperature and
voltage.
This represents the step size when the OCD is near 18 ohms at nominal conditions across all process
parameters and represents only the DRAM uncertainty. A 0 Ohm value (no calibration) can only be achieved
if the OCD impedance is 18 ± 0.75 Ohms under nominal conditions.
Slew rates measured from VIL(ac) to VIH(ac) with the load specified in Chapter 8.2.
The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as
measured from AC to AC. This is verified by design and characterisation but not subject to production test.
3)
4)
5)
6)
Data Sheet
71
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
7) Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQ’s is included
in tDQSQ and tQHS specification.
8) DRAM output slew rate specification applies to 400, 533 and 667 MT/s speed bins.
5.4
Default Output V-I Characteristics
DDR2 SDRAM output driver characteristics are defined
for full strength default operation as selected by the
EMRS(1) bits A[9:7] =’111’. Figure 65 and Figure 66
Table 30
show the driver characteristics graphically and the
tables show the same data suitable for input into
simulation tools.
Full Strength Default Pull-up Driver Characteristics
Voltage (V)
Pull-up Driver Current [mA]
Min.
Nominal Default low
Nominal Default high
Max.
0.2
–8.5
–11.1
–11.8
–15.9
0.3
–12.1
–16.0
–17.0
–23.8
0.4
–14.7
–20.3
–22.2
–31.8
0.5
–16.4
–24.0
–27.5
–39.7
0.6
–17.8
–27.2
–32.4
–47.7
0.7
–18.6
–29.8
–36.9
–55.0
0.8
–19.0
–31.9
–40.8
–62.3
0.9
–19.3
–33.4
–44.5
–69.4
1.0
–19.7
–34.6
–47.7
–75.3
1.1
–19.9
–35.5
–50.4
–80.5
1.2
–20.0
–36.2
–52.5
–84.6
1.3
–20.1
–36.8
–54.2
–87.7
1.4
–20.2
–37.2
–55.9
–90.8
1.5
–20.3
–37.7
–57.1
–92.9
1.6
–20.4
–38.0
–58.4
–94.9
1.7
–20.6
–38.4
–59.6
–97.0
1.8
—
–38.6
–60.8
–99.1
1.9
—
—
—
–101.1
Note: The driver characteristics evaluation conditions are:
1. Nominal Default 25oC (Tcase), VDDQ = 1.8 V, typical process
2. Minimum 95 oC (Tcase), VDDQ = 1.7V, slow–slow process
3. Maximum 0 oC (Tcase). VDDQ = 1.9 V, fast–fast process
Data Sheet
72
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
0
Pullup current (mA)
-20
-40
Minimum
Nominal Default Low
Nominal Default High
Maximum
-60
-80
-100
-120
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
VDDQ to VOUT (V)
Figure 65
Full Strength Default Pull-up Driver Diagram
Table 31
Full Strength Default Pull–down Driver Characteristics
Voltage (V)
Pull-down Driver Current [mA]
Minimum
Nominal Default low
Nominal Default high
Maximum
0.2
8.5
11.3
11.8
15.9
0.3
12.1
16.5
16.8
23.8
0.4
14.7
21.2
22.1
31.8
0.5
16.4
25.0
27.6
39.7
0.6
17.8
28.3
32.4
47.7
0.7
18.6
30.9
36.9
55.0
0.8
19.0
33.0
40.9
62.3
0.9
19.3
34.5
44.6
69.4
1.0
19.7
35.5
47.7
75.3
1.1
19.9
36.1
50.4
80.5
1.2
20.0
36.6
52.6
84.6
1.3
20.1
36.9
54.2
87.7
1.4
20.2
37.1
55.9
90.8
1.5
20.3
37.4
57.1
92.9
1.6
20.4
37.6
58.4
94.9
1.7
20.6
37.7
59.6
97.0
1.8
—
37.9
60.9
99.1
1.9
—
—
—
101.1
Note: The driver characteristics evaluation conditions are:
1. Nominal Default 25 oC (Tcase), VDDQ = 1.8 V, typical process,
2. Minimum 95 oC (Tcase), VDDQ = 1.7V, slow-slow process,
3. Maximum 0 oC (Tcase). VDDQ = 1.9 V, fast-fast process
Data Sheet
73
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
Pulldown current (mA)
120
100
80
Minimum
Nominal Default Low
Nominal Default High
Maximum
60
40
20
0
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
VOUT to VSSQ (V)
Figure 66
Full Strength Default Pull–down Driver Diagram
5.4.1
Calibrated Output Driver V-I Characteristics
looking at one DQ only. If the calibration procedure is
used, it is possible to cause the device to operate
outside the bounds of the default device characteristics
tables and figure. In such a situation, the timing
parameters in the specification cannot be guaranteed.
It is solely up to the system application to ensure that
the device is calibrated between the minimum and
maximum default values at all times. If this can’t be
guaranteed by the system calibration procedure, recalibration policy and uncertainty with DQ to DQ
variation, it is recommended that only the default
values to be used. The nominal maximum ad minimum
values represent the change in impedance from
nominal low and high as a result of voltage and
temperature change from the nominal condition to the
maximum and minimum conditions. If calibrated at an
extreme condition, the amount of variation could be as
much as from the nominal minimum to the nominal
maximum or vice versa.
DDR2 SDRAM output driver characteristics are defined
for full strength calibrated operation as selected by the
procedure outlined in the Off-Chip Driver (OCD)
Impedance Adjustment. The Table 32 and Table 33
show the data in tabular format suitable for input into
simulation tools. The nominal points represent a device
at exactly 18 ohms. The nominal low and nominal high
values represent the range that can be achieved with a
maximum 1.5 ohms step size with no calibration error
at the exact nominal conditions only (i.e. perfect
calibration procedure, 1.5 ohm maximum step size
guaranteed by specification). Real system calibration
error needs to be added to these values. It must be
understood that these V-I curves are represented here
or in supplier IBIS models need to be adjusted to a
wider range as a result of any system calibration error.
Since this is a system specific phenomena, it cannot be
quantified here. The values in the calibrated tables
represent just the DRAM portion of uncertainty while
Data Sheet
74
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
Table 32
Voltage (V)
Full Strength Calibrated Pull-down Driver Characteristics
Calibrated Pull-down Driver Current [mA]
Nominal Minimum
(21 Ohms)
Normal Low
(18.75 Ohms)
Nominal
(18 ohms)
Normal High
(17.25 Ohms)
Nominal
Maximum
(15 Ohms)
0.2
9.5
10.7
11.5
11.8
13.3
0.3
14.3
16.0
16.6
17.4
20.0
0.4
18.7
21.0
21.6
23.0
27.0
Note: The driver characteristics evaluation conditions are:
1.
2.
3.
4.
Nominal 25 oC (Tcase), VDDQ = 1.8 V, typical process
Nominal Low and Nominal High 25 oC (Tcase), VDDQ = 1.8V, any process
Nominal Minimum 95 oC (Tcase). VDDQ = 1.7 V, any process
Nominal Maximum 0 oC (Tcase), VDDQ = 1.9 V, any process
Table 33
Voltage (V)
Full Strength Calibrated Pull-up Driver Characteristics
Calibrated Pull-up Driver Current [mA]
Nominal
Minimum
(21 Ohms)
Normal Low
(18.75 Ohms)
Nominal
(18 ohms)
Normal High
(17.25 Ohms)
Nominal
Maximum
(15 Ohms)
0.2
–9.5
–10.7
–11.4
–11.8
–13.3
0.3
–14.3
–16.0
–16.5
–17.4
–20.0
0.4
–18.3
–21.0
–21.2
–23.0
–27.0
Note: The driver characteristics evaluation conditions are:
1.
2.
3.
4.
Nominal 25 oC (Tcase), VDDQ = 1.8 V, typical process
Nominal Low and Nominal High 25 oC (Tcase), VDDQ = 1.8V, any process
Nominal Minimum 95 oC (Tcase). VDDQ = 1.7 V, any process
Nominal Maximum 0 oC (Tcase), VDDQ = 1.9 V, any process
5.5
Input / Output Capacitance
Table 34
Input / Output Capacitance
Symbol
Parameter
min.
max.
Units
CCK
Input capacitance, CK and CK
1.0
2.0
pF
CDCK
Input capacitance delta, CK and CK
—
0.25
pF
CI
Input capacitance, all other input-only pins
1.0
2.0
pF
CDI
Input capacitance delta, all other input-only pins
—
0.25
pF
CIO
Input/output capacitance,
DQ, DM, DQS, DQS, RDQS, RDQS
3.0
4.0
pF
CDIO
Input/output capacitance delta,
DQ, DM, DQS, DQS, RDQS, RDQS
—
0.5
pF
Data Sheet
75
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
5.6
Power & Ground Clamp V-I Characteristics
Power and Ground clamps are provided on address
(A[13:0], BA[1:0]), RAS, CAS, CS, WE, CKE and ODT
Table 35
pins. The V-I characteristics for pins with clamps is
shown in Table 35.
Power & Ground Clamp V-I Characteristics
Voltage across clamp (V)
Minimum Power Clamp
Current (mA)
Minimum Ground Clamp Current (mA)
0.0
0
0
0.1
0
0
0.2
0
0
0.3
0
0
0.4
0
0
0.5
0
0
0.6
0
0
0.7
0
0
0.8
0.1
0.1
0.9
1.0
1.0
1.0
2.5
2.5
1.1
4.7
4.7
1.2
6.8
6.8
1.3
9.1
9.1
1.4
11.0
11.0
1.5
13.5
13.5
1.6
16.0
16.0
1.7
18.2
18.2
1.8
21.0
21.0
Data Sheet
76
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
IDD Specifications and Conditions
6
IDD Specifications and Conditions
Table 36
IDD Measurement Conditions
Parameter
Symbol Notes
1)2)3)4)5)6)
Operating Current 0
IDD0
One bank Active - Precharge; tCK = tCKmin., tRC = tRCmin., tRAS = tRASmin., CKE is HIGH, CS is
high between valid commands. Address and control inputs are SWITCHING, Databus inputs
are SWITCHING.
Operating Current 1
IDD1
One bank Active - Read - Precharge; IOUT = 0 mA, BL = 4, tCK = tCKmin., tRC = tRCmin., tRAS =
tRASmin., tRCD = tRCDmin.,AL = 0, CL = CLmin.; CKE is HIGH, CS is high between valid commands.
Address and control inputs are SWITCHING, Databus inputs are SWITCHING.
Precharge Power-Down Current
IDD2P
All banks idle; CKE is LOW; tCK = tCKmin;Other control and address inputs are STABLE, Data
bus inputs are FLOATING.
Precharge Standby Current
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCKmin.; Other control and address inputs are
SWITCHING, Data bus inputs are SWITCHING.
IDD2N
Precharge Quiet Standby Current
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCKmin.; Other control and address inputs are
STABLE, Data bus inputs are FLOATING.
IDD2Q
Active Power-Down Current
IDD3P(0)
All banks open; tCK = tCKmin., CKE is LOW; Other control and address inputs are STABLE, Data
bus inputs are FLOATING. MRS A12 bit is set to “0” (Fast Power-down Exit);
Active Power-Down Current
IDD3P(1)
All banks open; tCK = tCKmin., CKE is LOW; Other control and address inputs are STABLE, Data
bus inputs are FLOATING. MRS A12 bit is set to “1” (Slow Power-down Exit);
Active Standby Current
IDD3N
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLmin.; tCK = tCKmin.;
tRAS = tRASmax., tRP = tRPmin.; CKE is HIGH, CS is high between valid commands. Address inputs
are SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.
Operating Current
IDD4R
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLmin.; tCK = tCKmin.;
tRAS = tRASmax., tRP = tRPmin.; CKE is HIGH, CS is high between valid commands. Address inputs
are SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.
Operating Current
IDD4W
Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLmin.; tCK = tCKmin.;
tRAS = tRASmax., tRP = tRPmin.; CKE is HIGH, CS is high between valid commands. Address inputs
are SWITCHING; Data Bus inputs are SWITCHING;
Burst Refresh Current
tCK = tCKmin., Refresh command every tRFC = tRFCmin. interval, CKE is HIGH, CS is HIGH
between valid commands, Other control and address inputs are SWITCHING, Data bus
inputs are SWITCHING.
IDD5B
Distributed Refresh Current
tCK = tCKmin., Refresh command every tRFC = tREFI interval, CKE is LOW and CS is HIGH
between valid commands, Other control and address inputs are SWITCHING, Data bus
inputs are SWITCHING.
IDD5D
Data Sheet
77
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
IDD Specifications and Conditions
Table 36
IDD Measurement Conditions
Parameter
Symbol Notes
1)2)3)4)5)6)
Self-Refresh Current
CKE ≤ 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are
FLOATING, Data bus inputs are FLOATING. RESET = Low. IDD6 current values are
guaranteed up to TCASE of 85 °C max.
IDD6
All Bank Interleave Read Current
All banks are being interleaved at minimum tRC without violating tRRD using a burst length of
4. Control and address bus inputs are STABLE during DESELECTS. Iout = 0 mA.
IDD7
VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V
2) IDD specifications are tested after the device is properly initialized.
3) IDD parameter are specified with ODT disabled.
1)
4) Data Bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS and UDQS.
5) Definitions for IDD: LOW is defined as VIN ≤ VIL(ac)max; HIGH is defined as VIN ≥ VIH(ac)min; STABLE is defined as inputs are
stable at a HIGH or LOW level; FLOATING is defined as inputs are VREF = VDDQ / 2; SWITCHING is defined as: Inputs are
changing between HIGH and LOW every other clock (once per two clocks) for address and control signals, and inputs
changing between HIGH and LOW every other clock (once per clock) for DQ signals not including mask or strobes.
6) Timing parameter minimum and maximum values for IDD current measurements are defined in Table 38.
Table 37
IDD Specification
Product Type Speed Code –3.7
–5
Speed Grade
DDR2 – 533
DDR2 – 400
Unit
Notes
Symbol
Max.
Max.
IDD0
65
55
mA
×4/×8
80
70
mA
×16
75
60
mA
×4/×8
90
75
mA
×16
4
4
mA
×16/×4/×8
40
32
mA
×16/×4/×8
30
25
mA
×16/×4/×8
16
13
mA
×16/×4/×8 MRS(12)=0
5
5
mA
×16/×4/×8 MRS(12)=1
40
35
mA
×16/×4/×8
90
70
mA
×4/×8
100
85
mA
×16
IDD4W
95
75
mA
×4/×8
110
90
mA
×16
IDD5B
IDD5D
IDD6
130
120
mA
×16/×4/×8
6
6
mA
IDD1
IDD2P
IDD2N
IDD2Q
IDD3P
IDD3N
IDD4R
IDD7
1)
×16/×4/×8
4
4
mA
1)
2
2
mA
1)
140
130
mA
×4/×8
220
210
mA
×16
, standard products
, low power products
IDD6: 0 ≤ TCASE ≤ 85 oC
Data Sheet
78
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
IDD Specifications and Conditions
6.1
IDD Test Conditions
For testing the IDD parameters, the following timing parameters are used:
Table 38
IDD Measurement Test Condition
Parameter
Symbol
-3.7
-5
Units
Notes
DDR2–533 4–4–4 DDR2–400 3–3–3
CAS Latency
CLmin
4
3
tCK
Clock Cycle Time
tCKmin
tRCDmin
tRCmin
3.75
5
ns
15
15
ns
60
55
ns
Active bank A to Active bank B command
delay
tRRDmin
7.5
7.5
ns
1)
10
10
ns
2)
Active to Precharge Command
tRASmin
tRPmin
tRFCmin
45
40
ns
15
15
ns
105
105
ns
Active to Read or Write delay
Active to Active / Auto-Refresh command
period
Precharge Command Period
Auto-Refresh to Active / Auto-Refresh
command period
1) ×4 & ×8 (1 kB page size)
2) ×16 (2 kB page size)
6.2
On Die Termination (ODT) Current
current consumption for any terminated input pin,
depends on the input pin is in tri-state or driving “0” or
“1”, as long a ODT is enabled during a given period of
time.
The ODT function adds additional current consumption
to the DDR2 SDRAM when enabled by the EMRS(1).
Depending on address bits A6 & A2 in the EMRS(1) a
“week” or “strong” termination can be selected. The
.
Table 39
ODT current per terminated input pin:
ODT Current
EMRS(1) State min.
typ.
max.
Unit
Enabled ODT current per DQ
IODTO
added IDDQ current for ODT enabled;
ODT is HIGH; Data Bus inputs are FLOATING
A6 = 0, A2 = 1
5
6
7.5
mA/DQ
A6 = 1, A2 = 0
2.5
3
3.75
mA/DQ
Active ODT current per DQ
IODTT
added IDDQ current for ODT enabled;
ODT is HIGH; worst case of Data Bus inputs are
STABLE or SWITCHING.
A6 = 0, A2 = 1
10
12
15
mA/DQ
A6 = 1, A2 = 0
5
6
7.5
mA/DQ
Note: For power consumption calculations the ODT duty cycle has to be taken into account
Data Sheet
79
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Electrical Characteristics & AC Timing - Absolute Specification
7
Electrical Characteristics & AC Timing - Absolute Specification
Table 40
Timing Parameter by Speed Grade - DDR2-400 & DDR2-5331)2)3)4)5)6)
Symbol Parameter
tAC
tDQSCK
tCH
tCL
tHP
tCK
–5
DDR2–400 3–3–3
–3.7
DDR2–533 4–4–4
Unit Notes
Min.
Max.
Min.
Max.
DQ output access time from CK / CK
–600
+ 600
–500
+500
ps
DQS output access time from CK / CK
–500
+ 500
–450
+450
ps
CK, CK high-level width
0.45
0.55
0.45
0.55
CK, CK low-level width
0.45
0.55
0.45
0.55
tCK
tCK
Clock half period
min. (tCL, tCH)
min. (tCL, tCH)
Clock cycle time
5000
8000
5000
8000
ps
8)9)
5000
8000
3750
8000
ps
8)10)
7)
tIS
tIH
tDS
tDH
tIPW
Address and control input setup time
350
—
250
—
ps
11)
Address and control input hold time
475
—
375
—
ps
11)
DQ and DM input setup time
150
—
100
—
ps
12)
DQ and DM input hold time
275
—
225
—
ps
12)
Address and control input pulse width
(each input)
0.6
—
0.6
—
tCK
tDIPW
tHZ
DQ and DM input pulse width (each input) 0.35
—
0.35
—
tCK
Data-out high-impedance time from CK /
CK
—
tACmax
—
tACmax
ps
13)
tLZ(DQ)
tLZ(DQS)
tDQSQ
DQ low-impedance time from CK / CK
2×tACmin
2×tACmin
13)
tACmin
tACmin
tACmax
tACmax
ps
DQS low-impedance from CK / CK
tACmax
tACmax
ps
13)
DQS-DQ skew (for DQS & associated DQ —
signals)
350
—
300
ps
14)
tQHS
tQH
tDQSS
Data hold skew factor
—
450
—
400
ps
Data output hold time from DQS
tHP-tQHS
—
tHP-tQHS
—
Write command to 1st DQS latching
transition
WL
–0.25
WL
+0.25
WL
–0.25
WL
+0.25
tCK
tDQSL,H
DQS input low (high) pulse width (write
cycle)
0.35
—
0.35
—
tCK
tDSS
DQS falling edge to CK setup time (write
cycle)
0.2
—
0.2
—
tCK
tDSH
DQS falling edge hold time from CK (write 0.2
cycle)
—
0.2
—
tCK
tMRD
tWPRE
tWPST
tRPRE
tRPST
tRAS
tRC
Mode register set command cycle time
2
—
2
—
Write preamble
0.25
—
0.25
—
Write postamble
0.40
0.60
0.40
0.60
Read preamble
0.9
1.1
0.9
1.1
Read postamble
0.40
0.60
0.40
0.60
tCK
tCK
tCK
tCK
tCK
Active to Precharge command
40
70000
45
70000
ns
Active to Active/Auto-Refresh command
period
55
—
60
—
ns
Data Sheet
80
15)
13)
13)
16)
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Electrical Characteristics & AC Timing - Absolute Specification
Timing Parameter by Speed Grade - DDR2-400 & DDR2-5331)2)3)4)5)6)
Table 40
Symbol Parameter
–5
DDR2–400 3–3–3
–3.7
DDR2–533 4–4–4
Min.
Max.
Min.
Max.
Unit Notes
tRFC
Auto-Refresh to Active/Auto-Refresh
command period
105
—
105
—
ns
17)
tRCD
Active to Read or Write delay
(with and without Auto-Precharge)
15
—
15
—
ns
18)
tRP
tRRD
Precharge command period
15
—
15
—
ns
Active bank A to Active bank B command
period
7.5
—
7.5
—
ns
19)
10
—
10
—
ns
20)
tCCD
tWR
tDAL
CAS A to CAS B command period
2
Write recovery time
15
Auto-Precharge write recovery +
precharge time
tWTR
tRTP
tCK
2
—
ns
WR + tRP —
WR + tRP —
tCK
21)
Internal Write to Read command delay
10
—
7.5
—
ns
22)
Internal Read to Precharge command
delay
7.5
—
7.5
—
ns
tXARD
Exit power down to any valid command
(other than NOP or Deselect)
2
—
2
—
tCK
23)
tXARDS
Exit active power-down mode to Read
command (slow exit, lower power)
6 - AL
—
6 - AL
—
tCK
23)
tXP
Exit precharge power-down to any valid
command (other than NOP or Deselect)
2
—
2
—
tCK
tXSRD
tXSNR
tCKE
tREFI
Exit Self-Refresh to Read command
200
—
200
—
tCK
Exit Self-Refresh to non-Read command
tRFC+10
—
tRFC+10
CKE minimum high and low pulse width
3
—
3
—
Average periodic refresh Interval
—
7.8
—
7.8
—
3.9
—
3.9
tCK
µs
µs
0
12
0
12
ns
tIS+tCK+tIH ––
ns
tOIT
tDELAY
OCD drive mode output delay
—
Minimum time clocks remain ON after CKE tIS+tCK+tIH —
asynchronously drops LOW
15
ns
24)25)
26)
27)
1) VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V) See notes 3)4)5)6)
2) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be
powered down and then restarted through the specified initialization sequence before normal operation can continue.
3) Timings are guaranteed with CK/CK differential slew rate of 2.0 V/ns. For DQS signals timings are guaranteed with a
differential slew rate of 2.0 V/ns in differential strobe mode and a slew rate of 1 V/ns in single ended mode. For other slew
rates see Chapter 8 of this datasheet.
4) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross.
The DQS / DQS, RDQS/ RDQS, input reference level is the crosspoint when in differential strobe mode;
The input reference level for signals other than CK/CK, DQS / DQS, RDQS / RDQS, tIS, tiH, tDS, tDH is VREF.
For tIS, tiH, tDS, tDH input reference levels see Chapter 8.3 of this datasheet.
5) Inputs are not recognized as valid until
recognized as LOW.
VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is
6) The output timing reference voltage level is VTT. See Chapter 8 for the reference load for timing measurements.
7) Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e.
this value can be greater than the minimum specification limits for tCL and tCH).
8) For input frequency change during DRAM operation, see Chapter 2.12 of this datasheet.
Data Sheet
81
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Electrical Characteristics & AC Timing - Absolute Specification
9) CL = 3
10) CL = 4 & 5
11) For timing definition, slew rate and slew rate derating see Chapter 8.3
12) For timing definition, slew rate and slew rate derating see Chapter 8.3
13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is
no longer driving (tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as
valid data transitions.These parameters are verified by design and characterisation, but not subject to production test.
14) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as
output slew rate mis-match between DQS / DQS and associated DQ in any given cycle.
15) The maximum limit for this parameter is not a device limit. The device operate with a greater value for this parameter, but
system performance (bus turnaround) degrades accordingly.
16) tRAS(max) is calculated from the maximum amount of time a DDR2 device can operate without a Refresh command which is
equal to 9 x tREFI.
17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.
18) The tRCD timing parameter is valid for both activate command to read or write command with and without Auto-Precharge.
Therefore a separate parameter tRAP for activate command to read or write command with Auto-Precharge is not necessary
anymore.
19) ×4 & ×8 (1k page size)
20) ×16 (2k page size)
21) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period.
WR refers to the WR parameter stored in the MRS.
22) tWTR is at least two clocks independent of operation frequency.
23) User can choose two different active power-down modes for additional power saving via MRS address bit A12.
24) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range
between 85oC and 95oC.
25) 0 oC - 85 oC
26) 85 oC - 95 oC
27) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode. In case of clock
frequency change during power-down, a specific procedure is required as describes in Chapter 2.12.
Table 41
ODT AC Electrical Characteristics and Operating Conditions (all speed bins)
Symbol
Parameter / Condition
tAOND
tAON
tAONPD
ODT turn-on delay
ODT turn-on
Max.
Units
2
2
tCK
tAC(min)
tAC(min) + 2 ns
tAC(max) + 1 ns
2 tCK + tAC(max) + 1 ns
ns
tAOFD
tAOF
tAOFPD
ODT turn-off delay
2.5
2.5
tCK
ODT turn-off
tAC(min)
tAC(min) + 2 ns
tAC(max) + 0.6 ns
2.5 tCK + tAC(max) + 1 ns
ns
tANPD
ODT to Power Down Mode
Entry Latency
3
—
tCK
tAXPD
ODT Power Down Exit Latency 8
—
tCK
ODT turn-on (Power-Down
Modes)
ODT turn-off (Power-Down
Modes)
Min.
Notes
1)
ns
2)
ns
1) ODT turn on time min. is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time
max is when the ODT resistance is fully on. Both are measure from tAOND.
2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in
high impedance. Both are measured from tAOFD.
Data Sheet
82
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
8
Reference Loads, Setup & Hold Timing Definition and Slew Rate
Derating
8.1
Reference Load for Timing Measurements
transmission line terminated at the tester electronics.
This reference load is also used for output slew rate
characterisation. The output timing reference voltage
level for single ended signals is the crosspoint with VTT.
The figure represents the timing reference load used in
defining the relevant timing parameters of the device. It
is not intended to either a precise representation of the
typical system environment nor a depiction of the actual
load presented by a production tester. System
designers should use IBIS or other simulation tools to
correlate the timing reference load to a system
environment. Manufacturers correlate to their
production test conditions, generally a coaxial
The output timing reference voltage level for differential
signals is the crosspoint of the true (e.g. DQS) and the
complement (e.g. DQS) signal.
VDDQ
CK, CK
DUT
DQ
DQS
DQS
RDQS
RDQS
25 Ohm
VTT = VDDQ / 2
Timing Reference Points
Figure 67
Reference Load for Timing Measurements
8.2
Slewrate Measurements
8.2.1
Output Slewrate
For differential signals (e.g. DQS / DQS) output slew
rate is measured between DQS - DQS = 500 mV and
DQS – DQS = + 500 mV. Output slew rate is verified by
design and characterisiation, but not subject to
production test.
With the reference load for timing measurements
output slew rate for falling and rising edges is measured
between VTT – 250 mV and VTT + 250 mV for single
ended signals.
8.2.2
Input Slewrate - Differential signals
Input slewrate for differential signals (CK / CK, DQS /
DQS, RDQS / RDQS) for rising edges are measured
from f.e. CK - CK = –250 mV to CK – CK = +500 mV
8.2.3
and from CK – CK = +250 mV to CK – CK = –500mV
for falling edges.
Input Slewrate - Single ended signals
Input slew rate for single ended signals (other than tIS,
tIH, tDS and tDH) are measured from dc-level to ac-level:
VREF –125 mV to VREF + 250 mV for rising edges and
Data Sheet
from VREF + 125 mV to VREF – 250 mV for falling edges.
For slew rate definition of the input and data setup and
hold parameters see Chapter 8.3 of this datasheet.
83
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
8.3
Input and Data Setup and Hold Time
8.3.1
Timing Definition for Input Setup (tIS) and Hold Time (tIH)
Address and control input setup time (tIS) is referenced
from the input signal crossing at the VIH(ac) level for a
rising signal and VIL(ac) for a falling signal applied to the
device under test. Address and control input hold time
(tIH) is referenced from the input signal crossing at the
VIL(dc) level for a rising signal and VIH(dc) for a falling
signal applied to the device under test.
.
CK
CK
t
IS
t
t
IH
IS
t
IH
V DDQ
V IH(ac) min
V IH(dc) min
V REF
V IL(dc) max
V IL(ac) max
V SS
Figure 68
Input, setup and Hold Time Diagram
8.3.2
Timing Definition for Data Setup (tDS) and Hold Time (tDH)
2. Data input hold time with differential data strobe
enabled MR[bit10]=0, is referenced from the input
signal crossing at the VIL(dc) level to the differential
data strobe crosspoint for a rising signal and VIH(dc)
to the differential data strobe crosspoint for a falling
signal applied to the device under test. Input
waveform timing with single-ended data strobe
enabled MR[bit10]=1, is referenced from the input
signal crossing at the VIL(dc) level to the singleended data strobe crossing VREF for a rising signal
and VIH(dc) to the single-ended data strobe crossing
VREF for a falling signal applied to the device under
test.
1. Data input setup time with differential data strobe
enabled MR[bit10]=0, is referenced from the input
signal crossing at the VIH(ac) level to the differential
data strobe crosspoint for a rising signal, and from
the input signal crossing at the VIL(ac) level to the
differential data strobe crosspoint for a falling signal
applied to the device under test. Input waveform
timing with single-ended data strobe enabled
MR[bit10]=1, is referenced from the input signal
crossing at the VIH(ac) level to the data strobe
crossing VREF for a rising signal, and from the input
signal crossing at the VIL(ac) level to the singleended data strobe crossing VREF for a falling signal
applied to the device under test.
Data Sheet
84
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
DQS
Differential Input
Waveform
DQS
Single-ended Input
Waveform
DQS
V REF
t
DS
t
DH
t
t
DS DH
V DDQ
V IH(ac) min
V IH(dc) min
V REF
V IL(dc) max
V IL(ac) max
V SS
Figure 69
Data, Setup and Hold Time Diagram
8.3.3
Slew Rate Definition for Input and Data Setup and Hold Times
Setup (tDS) nominal slew rate for a rising signal is
defined as the slew rate between the last crossing of
VREF(dc) and the first crossing of VIH(ac)min. Setup (tDS)
nominal slew rate for a falling signal is defined as the
slew rate between the last crossing of VREF(dc) and the
first crossing of VIL(ac)max. If the actual signal is always
earlier than the nominal slew rate line between shaded
‘VREF(dc) to ac region’, use nominal slew rate for derating
value.(Figure 70)
Hold (tDH) nominal slew rate for a rising signal is defined
as the slew rate between the last crossing of VIL(dc)max
and the first crossing of VREF(dc). Hold (tDH) nominal slew
rate for a falling signal is defined as the slew rate
between the last crossing of VIH(dc)min and the first
crossing of VREF(dc). If the actual signal is always later
than the nominal slew rate line between shaded ‘dc
level to VREF(dc) region’, use nominal slew rate for
derating value. (Figure 72)
If the actual signal is later than the nominal slew rate
line anywhere between shaded ‘VREF(dc) to ac region’,
the slew rate of a tangent line to the actual signal from
the ac level to dc level is used for derating value.
(Figure 71)
If the actual signal is earlier than the nominal slew rate
line anywhere between shaded ‘dc to VREF(dc) region’,
the slew rate of a tangent line to the actual signal from
the dc level to VREF(dc) level is used for derating
value.(Figure 73)
Data Sheet
85
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
CK,DQS
CK,DQS
t
t IS ,t DS
IH ,t DH
t IS ,t DS
t
,t
IH DH
V DDQ
V IH (ac)
min
V
min
IH (dc)
Nominal
slew rate
V REF(dc)
Nominal
slew rate
V
V
IL (dc)
IL (ac)
max
V REF to ac
region
max
V SS
Delta TF
Figure 70
Delta TR
Setup Slew Rate
=
Falling Signal
Vref(dc) - VIL(ac)max
Setup Slew Rate
=
Rising Signal
VIH(ac)min - VREF(dc)
Delta TF
Delta TR
Slew Rate Definition Nominal Diagram for tIS(tDS)
Note: DQS, DQS signals must be monotonic between VIL(dc)max and VIH(dc)min.
Data Sheet
86
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
CK,DQS
CK,DQS
V IH (ac)
min
V
min
IH (dc)
t
t IS ,t DS
V DDQ
VREF to ac
region
IH ,t DH
t
,t
t ,t
IS DS IH DH
Nominal
line
Tangent
line
V REF
Tangent
line
V
IL (dc)
max
V IL (ac)
max
VREF to ac
region
Nominal
line
Delta TR
V SS
Delta TF
Figure 71
Setup Slew Rate
=
Falling Signal
tangent line [VREF(dc) - VIL(ac)max]
Setup Slew Rate
=
Rising Signal
tangent line [VIH(ac)min - VREF(dc)]
Delta TF
Delta TR
Slew Rate Definition Tangent Diagram for tIS(tDS)
Note: DQS, DQS signals must be monotonic between VIL(dc)max and VIH(dc)min.
Data Sheet
87
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
CK ,DQS
CK ,DQS
V
t
t IS ,t DS
IH ,t DH
t
IS
,t
t ,t
DS IH DH
DDQ
V IH (ac)
min
V
min
IH (dc)
Dc to VREF
region
V REF(dc)
Dc to VREF
region
V IL (dc)
max
V IL (ac)
max
Nominal
slew rate
Nominal
slew rate
V SS
Delta TR
Hold Slew Rate
Falling Signal
VIH(dc)min - VREF(dc)
=
Hold Slew Rate
=
Rising Signal
Figure 72
Delta TF
Delta TF
VREF(dc) - VIL(dc)max
Delta TR
Slew Rate Definition Nominal Diagram for tIH(tDH)
Note: DQS, DQS signals must be monotonic between VIL(dc)max and VIH(dc)min.
Data Sheet
88
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
CK,DQS
CK,DQS
V
t
t IS ,t DS
DDQ
IH ,t DH
t
,t
t ,t
IS DS IH DH
Nominal
V IH (ac)
min
V
min
IH (dc)
slew rate
Dc to VREF
region
Tangent
line
V REF(dc)
Dc to VREF
region
V IL (dc)
max
V IL (ac)
max
Tangent
line
Nominal
slew rate
V SS
Delta TR
Hold Slew Rate
Falling Signal
Tangent line [VIH(dc)min - VREF(dc)]
=
Hold Slew Rate
=
Rising Signal
Figure 73
Delta TF
Delta TF
Tangent line [VREF(dc) - VIL(dc)max]
Delta TR
Slew Rate Definition Tangent Diagram for tIH(tDH)
Note: DQS, DQS signals must be monotonic between VIL(dc)max and VIH(dc)min.
Data Sheet
89
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
Table 42
Input Setup (tIS) and Hold (tIH) Time Derating Table
Command / Address
Slew rate (V/ns)
Units
2.0 V/ns
1.5 V/ns
1.0 V/ns
∆ tIS
∆ tIH
∆ tIS
∆ tIH
∆ tIS
∆ tIH
4.0
187
94
217
124
247
154
ps
3.5
179
89
209
119
239
149
ps
3.0
167
83
197
113
227
143
ps
2.5
150
75
180
105
210
135
ps
2.0
125
45
155
75
185
105
ps
1.5
83
21
113
51
143
81
ps
1.0
0
0
30
30
60
60
ps
0.9
–11
–14
19
16
49
46
ps
0.8
–25
–31
5
–1
35
29
ps
0.7
–43
–54
–13
–24
17
6
ps
0.6
–67
–83
–37
–53
–7
–23
ps
0.5
–110
–125
–80
–95
–50
–65
ps
0.4
–175
–188
–145
–158
–115
–128
ps
0.3
–285
–292
–255
–262
–225
–232
ps
0.25
–350
–375
–320
–345
–290
–315
ps
0.2
–525
–500
–495
–470
–465
–440
ps
0.15
–800
–708
–770
–678
–740
–648
ps
0.1
–1450
–1125
–1420
–1095
–1390
–1065
ps
1) For all input signals the total tIS (input setup time) and
value to the derating value listed in this table.
Data Sheet
Notes
1)
CK, CK Differential Slew Rate
tIH (input hold time) required is calculated by adding the individual
90
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
DQ Slewrate (V/ns)
Table 43
Data Setup (tDS) and Hold Time (tDH) Derating Table1)2)
DQS, DQS Differential Slew Rate
4.0 V/ns 3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
∆
∆
∆
∆
∆
∆
∆
∆
∆
∆
∆
∆
∆
∆
∆
∆
∆
tDS
tDH tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
∆
2.0
125 45 125 45
125 45
—
—
—
—
—
—
—
—
—
—
—
—
1.5
83
21 83
21
83
21
95
33
—
—
—
—
—
—
—
—
—
—
1.0
0
0
0
0
0
0
12
12
24
24
—
—
—
—
—
—
—
—
0.9
—
—
–11 –14 –11 –14 1
–2
13
10
25
22
—
—
—
—
—
—
0.8
—
—
—
—
–25 –31 –13 –19 –1
–7
11
5
23
17
—
—
—
—
0.7
—
—
—
—
—
—
–31 –42 –19 –30 –7
–6
17
6
—
—
0.6
—
—
—
—
—
—
—
—
–43 –49 –31 –47 –19
–35
–7
–23
5
–11
0.5
—
—
—
—
—
—
—
—
—
—
–74 –89 –62
–77
–50
–65
–38
–53
0.4
—
—
—
—
—
—
—
—
—
—
—
–18 5
—
–127 –140 –115 –128 –103 –116
1) All units in ps.
2) For all input signals the total tDS (setup time) and
value to the derating value listed in this table.
tDH (hold time) required is calculated by adding the individual datasheet
8.4
Overshoot and Undershoot Specification
Table 44
AC Overshoot / Undershoot Specification for Address and Control Pins
Parameter
DDR2–400
DDR2–533
Units
Maximum peak amplitude allowed for overshoot area
0.9
0.9
V
Maximum peak amplitude allowed for undershoot area
0.9
0.9
V
Maximum overshoot area above VDD
0.75
0.56
V.ns
Maximum undershoot area below VSS
0.75
0.56
V.ns
Volts (V)
Maximum Amplitude
Overshoot Area
VDD
VSS
Maximum Amplitude
Undershoot Area
Time (ns)
Figure 74
Data Sheet
AC Overshoot / Undershoot Diagram for Address and Control Pins
91
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
Table 45
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
DDR2–400
DDR2–533
Units
Maximum peak amplitude allowed for overshoot area
0.9
0.9
V
Maximum peak amplitude allowed for undershoot area
0.9
0.9
V
Maximum overshoot area above VDDQ
0.38
0.28
V.ns
Maximum undershoot area below VSSQ
0.38
0.28
V.ns
Volts (V)
Maximum Amplitude
Overshoot Area
VDDQ
VSSQ
Maximum Amplitude
Undershoot Area
Time (ns)
Figure 75
Data Sheet
AC Overshoot / Undershoot Diagram for Clock, Data, Strobe and Mask Pins
92
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Package Dimensions
9
Package Dimensions
10.5
11 x 0.8 = 8.8
0.8
5)
A
2)
2)
10
8 x 0.8 = 6.4
0.8
2.2 MAX.
B
1)
0.18 MAX.
0.2
4) 3)
0.1 C
1.2 MAX.
0.31 MIN.
0.1 C
ø0.46 ±0.05
60x
A B
ø0.15 M
C
ø0.08 M
C SEATING PLANE
1) Dummy pads without ball
2) Middle of packages edges
3) Package orientation mark A1
4) Bad unit marking (BUM)
5) Die sort fiducial
Figure 76
Data Sheet
Package Pinout P-TFBGA-60-6 (top view)
93
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Package Dimensions
12.5
14 x 0.8 = 11.2
0.8
5)
A
2)
4)
2)
10
8 x 0.8 = 6.4
0.8
2.2 MAX.
B
1)
0.18 MAX.
0.2
3)
0.1 C
0.31 MIN.
1.2 MAX.
0.1 C
ø0.46 ±0.05
84x
ø0.15 M
A B
C
ø0.08 M
C SEATING PLANE
1) Dummy pads without ball
2) Middle of packages edges
3) Package orientation mark A1
4) Bad unit marking (BUM)
5) Die sort fiducial
Figure 77
Data Sheet
Package Pinout P-TFBGA-84-1 (top view)
94
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
DDR2 Component Nomenclature
10
DDR2 Component Nomenclature
Table 46
Nomenclature Fields and Examples
Example for
Field Number
DDR2 DRAM
1
2
3
4
5
HYB
18
T
512
16
6
7
8
9
10
0
A
C
–5
Table 47
DDR2 DRAM Nomenclature
Field
Description
Values
Coding
1
INFINEON
Component Prefix
HYB
Constant
2
Interface Voltage [V]
18
SSTL1.8
3
DRAM Technology
T
DDR2
4
Component Density [Mbit]
256
256 Mbit
512
512 Mbit
1G
1 Gbit
2G
2 Gbit
40
×4
80
×8
16
×16
5+6
Number of I/Os
7
Product Variations
0 .. 9
look up table
8
Die Revision
A
First
B
Second
C
FBGA,
lead-containing
F
FBGA, lead-free
–3.7
DDR2-533
–5
DDR2-400
9
10
11
Data Sheet
Package,
Lead-Free Status
Speed Grade
11
N/A for Components
95
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
www.infineon.com
Published by Infineon Technologies AG