IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES IDT54/74FCT827AT/BT/CT/DT IDT54/74FCT2827AT/BT/CT FAST CMOS 10-BIT BUFFERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Common features: – Low input and output leakage ≤1µA (max.) – CMOS power levels – True TTL input and output compatibility – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) – Meets or exceeds JEDEC standard 18 specifications – Product available in Radiation Tolerant and Radiation Enhanced versions – Military product compliant to MIL-STD-883, Class B and DESC listed (dual marked) – Available in DIP, SOIC, SSOP, QSOP, CERPACK and LCC packages • Features for FCT827T: – A, B, C and D speed grades – High drive outputs (-15mA IOH, 48mA IOL) • Features for FCT2827T: – A, B and C speed grades – Resistor outputs (-15mA IOH, 12mA IOL Com.) (-12mA IOH, 12mA IOL Mil.) – Reduced system switching noise The FCT827T is built using an advanced dual metal CMOS technology. The FCT827T/FCT2827T 10-bit bus drivers provide highperformance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NANDed output enables for maximum control flexibility. All of the FCT827T high-performance interface family are designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs. All inputs have clamp diodes to ground and all outputs are designed for low-capacitance bus loading in high-impedance state. The FCT2827T has balanced output drive with current limiting resistors. This offers low ground bounce, minimal undershoot and controlled output fall times-reducing the need for external series terminating resistors. FCT2827T parts are plug-in replacements for FCT827T parts. FUNCTIONAL BLOCK DIAGRAM Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 OE1 OE2 2573 drw 01 The IDT logo is a registered trademark of Integrated Device Technology, Inc. MILITARY AND COMMERCIAL TEMPERATURE RANGES 1995 Integrated Device Technology, Inc. 6.22 6.22 AUGUST 1995 DSC-4217/5 1 1 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES INDEX 1 2 3 P24-1 4 D24-1 5 SO24-2 6 SO24-7 7 SO24-8 & 8 9 E24-1 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 OE2 D2 D3 D4 NC D5 D6 D7 4 3 2 1 28 27 26 25 5 24 6 23 7 8 22 L28-1 9 21 20 10 19 11 1213 14 15 16 17 18 Y2 Y3 Y4 NC Y5 Y6 Y7 D8 D9 GND NC OE2 Y9 Y8 OE1 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 GND D1 D0 OE1 NC VCC Y0 Y1 PIN CONFIGURATIONS 2573 drw 02 2573 drw 03 DIP/SOIC/SSOP/QSOP/CERPACK TOP VIEW LCC TOP VIEW FUNCTION TABLE(1) PIN DESCRIPTION Names I/O DI I Description When both are LOW the outputs are enabled. When either one or both are HIGH the outputs are High Z. 10-bit data input. OEI I YI O 10-bit data output. Inputs 2573 tbl 01 ABSOLUTE MAXIMUM RATINGS(1) Military –0.5 to +7.0 Unit V –0.5 to VCC +0.5 V –55 to +125 °C –65 to +135 °C –65 to +150 °C 0.5 W I OUT –60 to +120 mA –60 to +120 OE1 OE2 DI YI Function L L H X L L X H L H X X L H Z Z Transparent Three-State NOTE: 1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance 2573 tbl 02 CAPACITANCE (TA = +25°C, f = 1.0MHz) Symbol Rating Commercial VTERM(2) Terminal Voltage –0.5 to +7.0 with Respect to GND VTERM(3) Terminal Voltage –0.5 to with Respect to VCC +0.5 GND TA Operating 0 to +70 Temperature TBIAS Temperature –55 to +125 Under Bias TSTG Storage –55 to +125 Temperature PT Power Dissipation 0.5 DC Output Current Output Symbol Parameter(1) CIN Input Capacitance COUT Output Capacitance Conditions VIN = 0V Typ. 6 VOUT = 0V 8 Max. Unit 10 pF 12 NOTE: 1. This parameter is measured at characterization but not tested. pF 2573 lnk 04 2573 lnk 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals only. 3. Outputs and I/O terminals only. 6.22 2 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified: Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10% Symbol VIH VIL Parameter Input HIGH Level Test Conditions(1) Guaranteed Logic HIGH Level Input LOW Level Current(4) II H Input HIGH II L Input LOW Current (4) I OZH High Impedance Output Current I OZL (3-State Output Min. 2.0 Typ.(2) — Max. — Unit V Guaranteed Logic LOW Level — — 0.8 V VCC = Max. VI = 2.7V — — ±1 µA VI = 0.5V — — ±1 VO = 2.7V — — ±1 VO = 0.5V — — ±1 VCC = Max. pins) (4) Current(4) II Input HIGH VIK Clamp Diode Voltage VH Input Hysteresis I CC Quiescent Power Supply Current µA VCC = Max., VI = VCC (Max.) — — ±1 µA VCC = Min., IIN = –18mA — –0.7 –1.2 V — — 200 — mV — 0.01 1 VCC = Max., VIN = GND or VCC mA 2573 lnk 05 OUTPUT DRIVE CHARACTERISTICS FOR FCT827T Symbol VOH Parameter Output HIGH Voltage VOL Output LOW Voltage I OS Short Circuit Current Test Conditions(1) VCC = Min. I OH = –6mA MIL. VIN = VIH or V IL I OH = –8mA COM'L. I OH = –12mA MIL. I OH = –15mA COM'L. VCC = Min. I OL = 32mA MIL. VIN = VIH or V IL I OL = 48mA COM'L. VCC = Max., VO = GND (3) Min. 2.4 Typ.(2) 3.3 Max. — Unit V 2.0 3.0 — V — 0.3 0.5 V –60 –120 –225 mA 2573 lnk 06 OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T Symbol I ODL Parameter Output LOW Current Test Conditions(1) VCC = 5V, VIN = VIH or VIL, VOUT = 1.5V (3) Min. 16 Typ.(2) 48 Max. — Unit mA I ODH Output HIGH Current VCC = 5V, VIN = VIH or V IL, VOUT = 1.5V (3) –16 –48 — mA VOH Output HIGH Voltage 2.4 3.3 — V VOL Output LOW Voltage VCC = Min. VIN = VIH or VIL VCC = Min. VIN = VIH or V IL — 0.3 0.50 V I OH = –12mA MIL. I OH = –15mA COM'L. I OL = 12mA NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at Vcc = 5.0V, +25°C ambient. 3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second. 4. The test limit for this parameter is ±5µA at TA = –55°C. 6.22 2573 lnk 07 3 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES POWER SUPPLY CHARACTERISTICS Symbol ∆ICC ICCD IC Parameter Quiescent Power Supply Current TTL Inputs HIGH Dynamic Power Supply Current (4) Total Power Supply Current (6) Test Conditions(1) VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OE1 = OE2 = GND One Input Toggling 50% Duty Cycle VCC = Max. Min. — Typ.(2) 0.5 Max. 2.0 Unit mA VIN = VCC FCT827T VIN = GND FCT2827T — 0.15 0.25 mA/ MHz — 0.06 0.12 VIN = VCC — 1.5 3.5 FCT827T Outputs Open fi = 10MHz 50% Duty Cycle VIN = GND FCT2827T — 0.6 2.2 VIN = 3.4V — 1.8 4.5 OE1 = OE2 = GND VIN = GND FCT2827T — 0.9 3.2 One Bit Toggling VCC = Max. VIN = VCC — 3.0 6.0 (5) FCT827T FCT827T Outputs Open fi = 2.5MHz 50% Duty Cycle VIN = GND FCT2827T — 1.2 3.4 (5) VIN = 3.4V — 5.0 14.0 (5) OE1 = OE2 = GND VIN = GND FCT2827T — 3.2 11.4 (5) FCT827T mA Eight Bits Toggling NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25°C ambient. 3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi) ICC = Quiescent Current ∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices) fi = Input Frequency Ni = Number of Inputs at fi All currents are in milliamps and all frequencies are in megahertz. 6.22 2573 tbl 08 4 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES SWITCHING CHARACTERISTICS OVER OPERATING RANGE FCT827AT/FCT2827AT Com'l. Symbol tPLH tPHL tPZH tPZL tPHZ tPLZ Parameter Propagation Delay DI to YI Output Enable Time OEI to YI Output Disable Time OEI to YI FCT827BT/FCT2827BT Mil. Com'l. Mil. Condition(1) Min.(2) Max. Min.(2) Max. Min.(2) Max. Min.(2) Max. Unit CL = 50pF RL = 500Ω CL = 300pF(3) RL = 500Ω CL = 50pF RL = 500Ω CL = 300pF(3) RL = 500Ω CL = 5pF(3) RL = 500Ω CL = 50pF RL = 500Ω 1.5 8.0 1.5 9.0 1.5 5.0 1.5 6.5 ns 1.5 15.0 1.5 17.0 1.5 13.0 1.5 14.0 1.5 12.0 1.5 13.0 1.5 8.0 1.5 9.0 1.5 23.0 1.5 25.0 1.5 15.0 1.5 16.0 1.5 9.0 1.5 9.0 1.5 6.0 1.5 7.0 1.5 10.0 1.5 10.0 1.5 7.0 1.5 8.0 ns ns 2573 tbl 09 FCT827CT/FCT2827CT Com'l. Symbol tPLH tPHL tPZH tPZL tPHZ tPLZ Parameter Propagation Delay DI to YI Output Enable Time OEI to YI Output Disable Time OEI to YI FCT827DT Mil. Com'l. Mil. Condition(1) Min.(2) Max. Min.(2) Max. Min.(2) Max. Min.(2) Max. Unit CL = 50pF RL = 500Ω CL = 300pF(3) RL = 500Ω CL = 50pF RL = 500Ω CL = 300pF(3) RL = 500Ω CL = 5pF(3) RL = 500Ω CL = 50pF RL = 500Ω 1.5 4.4 1.5 5.0 1.5 3.8 — — ns 1.5 10.0 1.5 11.0 1.5 7.5 — — 1.5 7.0 1.5 8.0 1.5 5.0 — — 1.5 14.0 1.5 15.0 1.5 9.0 — — 1.5 5.7 1.5 6.7 1.5 4.3 — — 1.5 6.0 1.5 7.0 1.5 4.3 — — NOTES: 1. See test circuit and waveforms. 2. Minimum limits are guaranteed but not tested on Propagation Delays. 3. These conditions are guaranteed but not tested. ns ns 2573 tbl 10 6.22 5 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES TEST CIRCUITS AND WAVEFORMS SWITCH POSITION TEST CIRCUITS FOR ALL OUTPUTS V CC 7.0V Closed Open 2573 lnk 11 DEFINITIONS: CL= Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator. D.U.T. 50pF RT Open Drain Disable Low All Other Tests V OUT Pulse Generator Switch Enable Low 500Ω VIN Test 500Ω CL 2573 drw 04 SET-UP, HOLD AND RELEASE TIMES DATA INPUT TIMING INPUT ASYNCHRONOUS CONTROL PRESET CLEAR ETC. SYNCHRONOUS CONTROL PRESET CLEAR CLOCK ENABLE ETC. tH tSU tREM tSU PULSE WIDTH 3V 1.5V 0V 3V 1.5V 0V LOW-HIGH-LOW PULSE 1.5V tW 3V 1.5V 0V HIGH-LOW-HIGH PULSE 1.5V 2573 drw 06 3V 1.5V 0V tH 2573 drw 05 PROPAGATION DELAY ENABLE AND DISABLE TIMES ENABLE SAME PHASE INPUT TRANSITION tPLH tPHL OUTPUT tPLH OPPOSITE PHASE INPUT TRANSITION tPHL 3V 1.5V 0V VOH 1.5V VOL DISABLE 3V CONTROL INPUT 1.5V OUTPUT NORMALLY LOW 3V 1.5V 0V SWITCH CLOSED 3.5V 1.5V tPZH OUTPUT NORMALLY HIGH 2573 drw 07 SWITCH OPEN 0V tPLZ tPZL 3.5V 0.3V VOL tPHZ 0.3V VOH 1.5V 0V 0V 2573 drw 08 NOTES: 1. Diagram shown for input Control Enable-LOW and input Control DisableHIGH 2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; tF ≤ 2.5ns; tR ≤ 2.5ns 6.22 6 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES ORDERING INFORMATION IDT XX Temp. Range FCT X Family XX Device Type X Package X Process Blank B Commercial MIL-STD-883, Class B P D E L SO PY Q Plastic DIP CERDIP CERPACK Leadless Chip Carrier Small Outline IC Shrink Small Outline Package Quarter-size Small Outline Package 827AT 827BT 827CT 827DT Non-Inverting 10-Bit Buffer Blank 2 High Drive Balanced Drive 54 74 –55°C to +125°C 0°C to +70°C 2573 drw 09 6.22 7