IDT IDT71V67703S75BQ

256K X 36, 512K X 18
IDT71V67703
3.3V Synchronous SRAMs
IDT71V67903
3.3V I/O, Burst Counter
Flow-Through Outputs, Single Cycle Deselect
Features
◆
◆
◆
◆
◆
◆
◆
◆
data, address and control registers. There are no registers in the data
output path (flow-through architecture). Internal logic allows the SRAM to
generate a self-timed write based upon a decision which can be left until
the end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V67703/7903 can provide four cycles of
data for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will flow-through from the
array after a clock-to-data access time delay from the rising clock edge of
the same cycle. If burst mode operation is selected (ADV=LOW), the
subsequent three cycles of output data will be available to the user on the
next three rising clock edges. The order of these three addresses are
defined by the internal burst counter and the LBO input pin.
The IDT71V67703/7903 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
256K x 36, 512K x 18 memory configurations
Supports fast access times:
– 7.5ns up to 117MHz clock frequency
– 8.0ns up to 100MHz clock frequency
– 8.5ns up to 87MHz clock frequency
LBO input selects interleaved or linear burst mode
GW
Self-timed write cycle with global write control (GW
GW), byte write
BWE
BW
enable (BWE
BWE), and byte writes (BW
BWx)
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O supply (VDDQ)
Packaged in a JEDEC Standard 100-pin thin plastic quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array (fBGA).
Description
The IDT71V67703/7903 are high-speed SRAMs organized as
256K x 36/512K x 18. The IDT71V67703/7903 SRAMs contain write,
Pin Description Summary
A0-A18
Address Inputs
Input
Synchronous
CE
Chip Enable
Input
Synchronous
CS0, CS1
Chip Selects
Input
Synchronous
OE
Output Enable
Input
Asynchronous
GW
Global Write Enable
Input
Synchronous
BWE
Byte Write Enable
Input
Synchronous
BW1, BW2, BW3, BW4(1)
Individual Byte Write Selects
Input
Synchronous
CLK
Clock
Input
N/A
ADV
Burst Address Advance
Input
Synchronous
ADSC
Address Status (Cache Controller)
Input
Synchronous
ADSP
Address Status (Processor)
Input
Synchronous
LBO
Linear / Interleaved Burst Order
Input
DC
ZZ
Sleep Mode
Input
Asynchronous
I/O0-I/O31, I/OP1-I/OP4
Data Input / Output
I/O
Synchronous
VDD, VDDQ
Core Power, I/O Power
Supply
N/A
VSS
Ground
Supply
N/A
5309 tbl 01
NOTE:
1. BW3 and BW4 are not applicable for the IDT71V67903.
DECEMBER 2003
1
©2002 Integrated Device Technology, Inc.
DSC-5309/05
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Definitions(1)
Symbol
Pin Function
I/O
Active
Description
A 0-A18
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a combi-nation of the
rising edge of CLK and ADSC Low or ADSP Low and CE Low.
ADSC
Address Status
(Cache Controller)
I
LOW
Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is
used to load the address registers with new addresses.
ADSP
Address Status
(Processor)
I
LOW
Synchronous Address Status from Processor. ADSP is an active LOW input that is used to
load the address registers with new addresses. ADSP is gated by CE.
ADV
Burst Address
Advance
I
LOW
Synchronous Address Advance. ADV is an active LOW input that is used to advance the
internal burst counter, controlling burst access after the initial address is loaded. When the
input is HIGH the burst counter is not incremented; that is, there is no address advance.
BWE
Byte Write Enable
I
LOW
Synchronous byte write enable gates the byte write inputs BW1-BW4. If BWE is LOW at the
rising edge of CLK then BWx inputs are passed to the next stage in the circuit. If BWE is
HIGH then the byte write inputs are blocked and only GW can initiate a write cycle.
BW1-BW4
Individual Byte
Write Enables
I
LOW
Synchronous byte write enables. BW1 controls I/O0-7, I/OP1, BW2 controls I/O8-15, I/OP2, etc.
Any active byte write causes all outputs to be disabled.
CE
Chip Enable
I
LOW
Synchronous chip enable. CE is used with CS 0 and CS1 to enable the IDT71V67703/7903.
CE also gates ADSP.
CLK
Clock
I
N/A
This is the clock input. All timing references for the device are made with respect to this
input.
CS0
Chip Select 0
I
HIGH
Synchronous active HIGH chip select. CS 0 is used with CE and CS1 to enable the chip.
CS1
Chip Select 1
I
LOW
Synchrono us active LOW chip select. CS1 is used with CE and CS0 to enable the chip.
GW
Global Write
Enable
I
LOW
Synchronous global write enable. This input will write all four 9-bit data bytes when LOW
on the rising edge of CLK. GW supersedes individual byte write enables.
I/O0-I/O31
I/OP1-I/OP4
Data Input/Output
I/O
N/A
Synchronous data input/output (I/O) pins. The data input path is registered, triggered by
the rising edge of CLK. The data output path is flow-through (no output register).
LBO
Linear Burst Order
I
LOW
Asynchronous burst order selection input. When LBO is HIGH, the inter-leaved burst
sequence is selected. When LBO is LOW the Linear burst sequence is selected. LBO is a
static input and must not change state while the device is operating.
OE
Output Enable
I
LOW
Asynchronous output enable. When OE is LOW the data output drivers are enabled on the
I/O pins if the chip is also selected. When OE is HIGH the I/O pins are in a highimpedance state.
V DD
Power Supply
N/A
N/A
3.3V core power supply.
VDDQ
Power Supply
N/A
N/A
3.3V I/O Supply.
V SS
Ground
N/A
N/A
Ground.
NC
No Connect
N/A
N/A
NC pins are not electrically connected to the device.
ZZ
Sleep Mode
1
HIGH
Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down
the IDT71V67703/7903 to its lowest power consumption level. Data retention is guaranteed
in Sleep Mode.
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
5309 tbl 02
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Functional Block Diagram
LBO
AD V
CLK
2
Binary
Counter
AD SC
Q1
ADSP
A0–A17/18
GW
BW E
BW
Burst
Logic
Q0
CLR
CLK EN
ADDRESS
REGISTER
INTERNAL
ADDRESS
Burst
Sequence
CEN
2
A0,A1
18/19
A0*
A1*
A2 - A18
36/18
18/19
Byte 1
Write Register
9
Byte 2
Write Driver
2
9
Byte 3
Write Register
BW
Byte 3
Write Driver
3
9
Byte 4
Write Register
BW
36/18
Byte 1
Write Driver
1
Byte 2
Write Register
BW
256K x 36/
512K x 18BIT
MEMORY
ARRAY
Byte 4
Write Driver
4
9
CE
CS0
CS 1
D
Q
Enable
Register
DATA INPUT
REGISTER
CLK EN
ZZ
Powerdown
OE
OE
I/O0–I/O31
I/OP1–I/OP4
OUTPUT
BUFFER
36/18
5309 drw 01
6.42
3
,
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Symbol
(2)
Rating
Commercial
Unit
VTERM
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA
(7)
Operating Temperature
-0 to +70
o
C
C
Recommended Operating
Temperature Supply Voltage
Grade
Temperature(1)
VSS
VDD
V DDQ
Commercial
0°C to +70°C
0V
3.3V±5%
3.3V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
3.3V±5%
5309 tbl 04
NOTE:
1. TA is the "instant on" case temperature.
Recommended DC Operating
Conditions
Symbol
TBIAS
Temperature
Under Bias
-55 to +125
o
TSTG
Storage
Temperature
-55 to +125
o
C
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
CIN
Input Capacitance
CI/O
I/O Capacitance
3.135
3.3
3.465
V
V DDQ
I/O Supply Voltage
3.135
3.3
3.465
V
VSS
Supply Voltage
0
0
0
V
VIH
Input High Voltage - Inputs
2.0
____
VDD +0.3
V
2.0
____
VDDQ +0.3
V
____
0.8
V
VIL
CIN
Input Capacitance
CI/O
I/O Capacitance
Input High Voltage - I/O
Input Low Voltage
(1)
-0.3
NOTE:
1. VIL (min) = -1.0V for pulse width less than t CYC/2, once per cycle.
Parameter(1)
Conditions
Max.
Unit
Symbol
VIN = 3dV
5
pF
CIN
Input Capacitance
VOUT = 3dV
7
pF
CI/O
I/O Capacitance
5309 tbl 07
(TA = +25° C, f = 1.0MHz)
Parameter(1)
Unit
5309 tbl 05
(TA = +25° C, f = 1.0MHz)
119 BGA Capacitance
Symbol
Max.
165 fBGA Capacitance
(TA = +25° C, f = 1.0MHz)
Parameter(1)
Typ.
Core Supply Voltage
VIH
100-Pin TQFP Capacitance
Symbol
Min.
VDD
5309 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed V DDQ during power supply ramp up.
7. TA is the "instant on" case temperature.
Parameter
Conditions
Max.
Unit
VIN = 3dV
7
pF
VOUT = 3dV
7
pF
5309 tbl 07a
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
4
Conditions
Max.
Unit
VIN = 3dV
7
pF
VOUT = 3dV
7
pF
5309 tbl 07b
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
A6
A7
CE
CS0
BW4
BW3
BW2
BW1
CS1
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A8
A9
Pin Configuration – 256K x 36, 100-Pin TQFP
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/OP3
I/O16
I/O17
VDDQ
VSS
I/O18
I/O19
I/O20
I/O21
VSS
VDDQ
I/O22
I/O23
VSS(1)
VDD
NC
VSS
I/O24
I/O25
VDDQ
VSS
I/O26
I/O27
I/O28
I/O29
VSS
VDDQ
I/O30
I/O31
I/OP4
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
51
30
I/OP2
I/O15
I/O14
VDDQ
VSS
I/O13
I/O12
I/O11
I/O10
VSS
VDDQ
I/O9
I/O8
VSS
NC
VDD
ZZ(2)
I/O7
I/O6
VDDQ
VSS
I/O5
I/O4
I/O3
I/O2
VSS
VDDQ
I/O1
I/O0
I/OP1
NC
A17
A10
A11
A12
A13
A14
A15
A16
NC
NC
VSS
VDD
LBO
A5
A4
A3
A2
A1
A0
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Top View
NOTES:
1. Pin 14 does not have to be directly connected to VSS as long as the input voltage is < VIL.
2. Pin 64 can be left unconnected and the device will always remain in active mode.
6.42
5
5309 drw 02a
,
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
A6
A7
CE
CS0
NC
NC
BW2
BW1
CS1
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A8
A9
Pin Configuration – 512K x 18, 100-Pin TQFP
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
NC
NC
1
80
2
79
3
VDDQ
VSS
NC
NC
I/O8
I/O9
VSS
VDDQ
I/O10
I/O11
VSS(1)
VDD
NC
VSS
I/O12
I/O13
VDDQ
VSS
I/O14
I/O15
I/OP2
NC
VSS
VDDQ
NC
NC
NC
4
78
77
5
76
6
75
7
74
73
8
9
72
71
10
11
70
12
69
13
68
14
67
66
15
16
65
64
17
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
A10
NC
NC
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
NC
VDD
ZZ(2)
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
NC
VSS
VDDQ
NC
NC
NC
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
A18
A11
A12
A13
A14
A15
A16
A17
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Top View
NOTES:
1. Pin 14 does not have to be directly connected to VSS as long as the input voltage is < VIL.
2. Pin 64 can be left unconnected and the device will always remain in active mode.
6.42
6
5309 drw 02b
,
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Configuration – 256K x 36, 119 BGA
1
2
3
4
5
6
7
A
VDDQ
A6
A4
ADSP
A8
A16
VDDQ
B
NC
CS0(4)
A3
ADSC
A9
A17
NC
C
NC
A7
A2
VDD
A12
A15
NC
D
I/O16
I/OP3
VSS
NC
VSS
I/OP2
I/O15
E
I/O17
I/O18
VSS
CE
VSS
I/O13
I/O14
F
VDDQ
I/O19
VSS
OE
VSS
I/O12
VDDQ
G
I/O20
I/O21
BW3
ADV
BW2
I/O11
I/O10
H
I/O22
I/O23
VSS
GW
VSS
I/O9
I/O8
J
VDDQ
V DD
NC
VDD
NC
VDD
VDDQ
K
I/O24
I/O26
VSS
CLK
VSS
I/O6
I/O7
L
I/O25
I/O27
BW4
NC
BW1
I/O4
I/O5
M
VDDQ
I/O28
VSS
BWE
VSS
I/O3
VDDQ
N
I/O29
I/O30
VSS
A1
VSS
I/O2
I/O1
P
I/O31
I/OP4
VSS
A0
VSS
I/OP1
I/O 0
R
NC
A5
LBO
VDD
VSS(1)
A13
NC
T
NC
NC
A 10
A11
A14
NC
ZZ(2)
VDDQ
DNU(3)
DNU(3)
DNU(3)
DNU(3)
DNU(3)
U
VDDQ
5309 drw 02c
Top View
Pin Configuration – 512K x 18, 119 BGA
A
1
2
VDDQ
A6
(4)
3
4
5
6
7
A4
ADSP
A8
A16
VDDQ
B
NC
CS0
A3
ADSC
A9
A18
NC
C
NC
A7
A2
VDD
A13
A17
NC
D
I/O8
NC
VSS
NC
VSS
I/OP1
NC
E
NC
I/O9
VSS
CE
VSS
NC
I/O7
F
VDDQ
NC
VSS
OE
VSS
I/O6
VDDQ
G
NC
I/O10
BW2
ADV
VSS
NC
I/O5
H
I/O11
NC
VSS
GW
VSS
I/O4
NC
J
VDDQ
V DD
NC
VDD
NC
VDD
VDDQ
K
NC
I/O12
VSS
CLK
VSS
NC
I/O3
L
I/O13
NC
VSS
NC
BW1
I/O2
NC
M
VDDQ
I/O14
VSS
BWE
VSS
NC
VDDQ
N
I/O15
NC
VSS
A1
VSS
I/O1
NC
P
NC
I/OP2
VSS
A0
VSS
NC
I/O0
R
NC
A5
LBO
VDD
VSS(1)
A12
NC
T
NC
A10
A 15
NC
A14
A11
ZZ (2)
VDDQ
DNU(3)
DNU(3)
DNU(3)
DNU(3)
DNU(3)
U
VDDQ
5309 drw 02d
Top View
NOTES:
1. R5 does not have to be directly connected to VSS as long as the input voltage is < VIL.
2. T7 can be left unconnected and the device will always remain in active mode.
3. DNU= Do not use; these signals can either be left unconnected or tied to Vss.
4. On future 18M devices CS0 will be removed, B2 will be used for address expansion.
6.42
7
,
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Configuration – 256K x 36, 165 fBGA
1
2
3
4
5
6
7
8
9
10
11
A
NC
A7
CE
BW3
BW2
CS1
BWE
ADSC
ADV
A8
NC
B
NC
A6
CS0
BW4
BW1
CLK
GW
OE
ADSP
A9
NC(3)
C
I/OP3
NC
VDDQ
V SS
V SS
VSS
VSS
VSS
VDDQ
NC
I/OP2
D
I/O17
I/O16
VDDQ
V DD
V SS
VSS
VSS
VDD
VDDQ
I/O15
I/O14
E
I/O19
I/O18
VDDQ
V DD
V SS
VSS
VSS
VDD
VDDQ
I/O13
I/O12
F
I/O21
I/O20
VDDQ
V DD
V SS
VSS
VSS
VDD
VDDQ
I/O11
I/O10
G
I/O23
I/O22
VDDQ
V DD
V SS
VSS
VSS
VDD
VDDQ
I/O9
I/O8
H
VSS (1)
NC
NC
V DD
V SS
VSS
VSS
VDD
NC
NC
ZZ(2)
J
I/O25
I/O24
VDDQ
V DD
V SS
VSS
VSS
VDD
VDDQ
I/O7
I/O6
K
I/O27
I/O26
VDDQ
V DD
V SS
VSS
VSS
VDD
VDDQ
I/O5
I/O4
L
I/O29
I/O28
VDDQ
V DD
V SS
VSS
VSS
VDD
VDDQ
I/O3
I/O2
M
I/O31
I/O30
VDDQ
V DD
V SS
VSS
VSS
VDD
VDDQ
I/O1
I/O0
N
I/OP4
NC
VDDQ
V SS
NC
NC(3)
NC
(3)
(3)
(4)
VSS
VDDQ
NC
I/OP1
(4)
P
NC
NC
A5
A2
DNU
A1
DNU
A10
A13
A14
A17
R
LBO
NC(3)
A4
A3
DNU(4)
A0
DNU(4)
A11
A12
A15
A16
5309tbl 17a
Pin Configuration – 512K x 18, 165 fBGA
1
2
3
4
5
6
7
8
9
10
11
A
NC(3)
A7
CE
BW2
NC
CS1
BWE
ADSC
ADV
A8
A10
B
NC
A6
CS 0
NC
BW1
CLK
GW
OE
ADSP
A9
NC(3)
C
NC
NC
VDDQ
V SS
VSS
V SS
VSS
VSS
VDDQ
NC
I/OP1
D
NC
I/O8
VDDQ
V DD
VSS
V SS
VSS
VDD
VDDQ
NC
I/O7
E
NC
I/O9
VDDQ
V DD
VSS
V SS
VSS
VDD
VDDQ
NC
I/O6
F
NC
I/O10
VDDQ
V DD
VSS
V SS
VSS
VDD
VDDQ
NC
I/O5
G
NC
I/O11
VDDQ
V DD
VSS
V SS
VSS
VDD
VDDQ
NC
I/O4
H
VSS(1)
NC
NC
V DD
VSS
V SS
VSS
VDD
NC
NC
ZZ(2)
J
I/O12
NC
VDDQ
V DD
VSS
V SS
VSS
VDD
VDDQ
I/O3
NC
K
I/O13
NC
VDDQ
V DD
VSS
V SS
VSS
VDD
VDDQ
I/O2
NC
L
I/O14
NC
VDDQ
V DD
VSS
V SS
VSS
VDD
VDDQ
I/O1
NC
M
I/O15
NC
VDDQ
V DD
VSS
V SS
VSS
VDD
VDDQ
I/O0
NC
NC
N
I/OP2
NC
(3)
VDDQ
V SS
(3)
NC
(4)
NC
VSS
VDDQ
NC
NC
(4)
P
NC
NC
A5
A2
DNU
A1
DNU
A11
A14
A15
A18
R
LBO
NC(3)
A4
A3
DNU(4)
A0
DNU(4)
A12
A13
A16
A17
5309 tbl 17b
NOTES:
1. H1 does not have to be directly connected to V SS, as long as the input voltage is < VIL.
2. H11 can be left unconnected and the device will always remain in active mode.
3. Pin N6, B11, A1, R2 and P2 are reserved for 18M, 36M, 72M, and 144M and 288M respectively.
4. DNU= Do not use; these signals can either be left unconnected or tied to Vss.
6.42
8
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 5%)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
|ILI|
Input Leakage Current
VDD = Max., VIN = 0V to V DD
___
5
µA
|ILI|
LBO Input Leakage Current(1)
VDD = Max., VIN = 0V to V DD
___
30
µA
5
µA
V
|ILO|
Output Leakage Current
VOUT = 0V to V CC
___
VOL
Output Low Voltage
IOL = +8mA, VDD = Min.
___
0.4
VOH
Output High Voltage
IOH = -8mA, VDD = Min.
2.4
___
V
5309 tbl 08
NOTE:
1. The LBO pin will be internally pulled to VDD if it is not actively driven in the application and the ZZ in will be internally pulled to V SS if not actively driven.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1)
7.5ns
8ns
8.5ns
Unit
Symbol
IDD
ISB1
ISB2
IZZ
Parameter
Operating Power Supply Current
Test Conditions
Com'l
Ind
Com'l
Ind
Com'l
Ind
265
285
210
230
190
210
50
70
50
70
50
70
Device Deselected, Outputs Open, V DD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = fMAX (2,.3)
145
165
140
160
135
155
ZZ > VHD, VDD = Max.
50
70
50
70
50
70
Device Se lected, Outputs Open, V DD = Max.,
VDDQ = Max., VIN > VIH or < VIL, f = fMAX(2)
mA
CMOS Standby Power Supply Current Device Deselected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = 0(2,3)
Clock Running Power Supply Current
Full Sleep Mode Supply Current
mA
mA
5309 tbl 09
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while ADSC = LOW; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
AC Test Conditions
AC Test Load
(VDDQ = 3.3V/2.5V)
Input Pulse Levels
0 to
2ns
Input Timing Reference Levels
1.5V
Output Timing Reference Levels
1.5V
AC Test Load
VDDQ/2
50Ω
3V
Input Rise/Fall Times
mA
I/O
Z0 = 50Ω
,
5309 drw 03
6
See Figure 1
5
Figure 1. AC Test Load
5309 tbl 10
4
∆tCD 3
(Typical, ns)
2
1
20 30 50
80 100
Capacitance (pF)
200
5309 drw 05
Figure 2. Lumped Capacitive Load, Typical Derating
6.42
9
,
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Synchronous Truth Table (1,3)
Address
Used
CE
CS0
CS 1
ADSP
ADSC
ADV
GW
BWE
BWx
OE (2)
CLK
I/O
Deselected Cycle, Power Down
None
H
X
X
X
L
X
X
X
X
X
↑
HI-Z
Deselected Cycle, Power Down
None
L
X
H
L
X
X
X
X
X
X
↑
HI-Z
Deselected Cycle, Power Down
None
L
L
X
L
X
X
X
X
X
X
↑
HI-Z
Deselected Cycle, Power Down
None
L
X
H
X
L
X
X
X
X
X
↑
HI-Z
Deselected Cycle, Power Down
None
L
L
X
X
L
X
X
X
X
X
↑
HI-Z
Read Cycle, Begin Burst
External
L
H
L
L
X
X
X
X
X
L
↑
DOUT
Read Cycle, Begin Burst
External
L
H
L
L
X
X
X
X
X
H
↑
HI-Z
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
H
X
L
↑
DOUT
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
H
L
↑
DOUT
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
H
H
↑
HI-Z
Write Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
L
X
↑
DIN
Write Cycle, Begin Burst
External
L
H
L
H
L
X
L
X
X
X
↑
DIN
Read Cycle, Continue Burst
Next
X
X
X
H
H
L
H
H
X
L
↑
DOUT
Read Cycle, Continue Burst
Next
X
X
X
H
H
L
H
H
X
H
↑
HI-Z
Read Cycle, Continue Burst
Next
X
X
X
H
H
L
H
X
H
L
↑
DOUT
Read Cycle, Continue Burst
Next
X
X
X
H
H
L
H
X
H
H
↑
HI-Z
Read Cycle, Continue Burst
Next
H
X
X
X
H
L
H
H
X
L
↑
DOUT
Read Cycle, Continue Burst
Next
H
X
X
X
H
L
H
H
X
H
↑
HI-Z
Read Cycle, Continue Burst
Next
H
X
X
X
H
L
H
X
H
L
↑
DOUT
Read Cycle, Continue Burst
Next
H
X
X
X
H
L
H
X
H
H
↑
HI-Z
Write Cycle, Continue Burst
Next
X
X
X
H
H
L
H
L
L
X
↑
DIN
Write Cycle, Continue Burst
Next
X
X
X
H
H
L
L
X
X
X
↑
DIN
Write Cycle, Continue Burst
Next
H
X
X
X
H
L
H
L
L
X
↑
DIN
Write Cycle, Continue Burst
Next
H
X
X
X
H
L
L
X
X
X
↑
DIN
Read Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
H
X
L
↑
DOUT
Read Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
H
X
H
↑
HI-Z
Read Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
X
H
L
↑
DOUT
Read Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
X
H
H
↑
HI-Z
Read Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
H
X
L
↑
DOUT
Read Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
H
X
H
↑
HI-Z
Read Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
X
H
L
↑
DOUT
Read Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
X
H
H
↑
HI-Z
Write Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
L
L
X
↑
DIN
Write Cycle, Suspend Burst
Current
X
X
X
H
H
H
L
X
X
X
↑
DIN
Write Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
L
L
X
↑
DIN
Write Cycle, Suspend Burst
Current
H
X
X
X
H
H
L
X
X
X
↑
DIN
Operation
5309 tbl 11
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. OE is an asynchronous input.
3. ZZ - low for the table.
6.42
10
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Synchronous Write Function Truth Table (1, 2)
Operation
GW
BWE
BW 1
BW 2
BW 3
BW 4
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write all Bytes
L
X
X
X
X
X
Write all Bytes
H
L
L
L
L
L
Write Byte 1(3)
H
L
L
H
H
H
Write Byte 2(3)
H
L
H
L
H
H
Write Byte 3(3)
H
L
H
H
L
H
Write Byte 4(3)
H
L
H
H
H
L
5309 tbl 12
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. BW3 and BW4 are not applicable for the IDT71V67903.
3. Multiple bytes may be selected during the same cycle.
Asynchronous Truth Table (1)
Operation(2)
OE
ZZ
I/O Status
Power
Read
L
L
Data Out
Active
Read
H
L
High-Z
Active
Write
X
L
High-Z – Data In
Active
Deselected
X
L
High-Z
Standby
Sleep Mode
X
H
High-Z
Sleep
5309 tbl 13
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
Interleaved Burst Sequence Table ( LBO=VDD)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
0
0
1
1
1
0
Third Address
1
0
1
1
0
0
0
1
Fourth Address(1)
1
1
1
0
0
1
0
0
5309 tbl 14
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
Linear Burst Sequence Table ( LBO=VSS)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
1
0
1
1
0
0
Third Address
1
0
1
1
0
0
0
1
Fourth Address(1)
1
1
0
0
0
1
1
0
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
6.42
11
5309 tbl 15
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics (VDD = 3.3V ±5%, Commercial and Industrial
Temperature Ranges)
7.5ns
Symbol
Parameter
8ns
8.5ns
Min.
Max.
Min.
Max.
Min.
Max.
Unit
8.5
____
10
____
11.5
____
ns
Clock Parameter
tCYC
Clock Cycle Time
tCH(1)
Clock High Pulse Width
3
____
4
____
4.5
____
ns
tCL(1)
Clock Low Pulse Width
3
____
4
____
4.5
____
ns
____
7.5
____
8
____
8.5
ns
2
____
2
____
ns
Output Parameters
tCD
Clock High to Valid Data
tCDC
Clock High to Data Change
2
____
tCLZ(2)
Clock High to Output Active
0
____
0
____
0
____
ns
tCHZ(2)
Clock High to Data High-Z
2
3.5
2
3.5
2
3.5
ns
tOE
Output Enable Access Time
____
3.5
____
3.5
____
3.5
ns
tOLZ(2)
Output Enable Low to Output Active
0
____
0
____
0
____
ns
tOHZ(2)
Output Enable High to Output High-Z
____
3.5
____
3.5
____
3.5
ns
1.5
____
2
____
2
____
ns
2
____
2
____
ns
Set Up Times
tSA
Address Setup Time
tSS
Address Status Setup Time
1.5
____
tSD
Data In Setup Time
1.5
____
2
____
2
____
ns
tSW
Write Setup Time
1.5
____
2
____
2
____
ns
1.5
____
2
____
2
____
ns
1.5
____
2
____
2
____
ns
tSAV
tSC
Address Advance Setup Time
Chip Enable/Select Setup Time
Hold Times
tHA
Address Hold Time
0.5
____
0.5
____
0.5
____
ns
tHS
Address Status Hold Time
0.5
____
0.5
____
0.5
____
ns
0.5
____
0.5
____
ns
tHD
Data In Hold Time
0.5
____
tHW
Write Hold Time
0.5
____
0.5
____
0.5
____
ns
tHAV
Address Advance Hold Time
0.5
____
0.5
____
0.5
____
ns
0.5
____
0.5
____
0.5
____
ns
100
____
100
____
100
____
ns
100
____
100
____
ns
40
____
50
____
tHC
Chip Enable/Select Hold Time
Sleep Mode and Configuration Parameters
tZZPW
ZZ Pulse Width
tZZR(3)
ZZ Recovery Time
100
____
tCFG(4)
Configuration Set-up Time
34
____
NOTES:
1. Measured as HIGH above VIH and LOW below VIL.
2. Transition is measured ±200mV from steady-state.
3. Device must be deselected when powered-up from sleep mode.
4. tCFG is the minimum time required to configure the device based on the LBO input. LBO is a static input and must not change during normal operation.
6.42
12
ns
5309 tbl 16
6.42
13
Output
Disabled
tSC
tSA
tSS
tHS
tOLZ
tOE
O1(Ax)
tHC
tHA
Flow-through
Read
Ax
tOHZ
Ay
(1)
tCH
tCD
tSAV
tHAV
O1(Ay)
tCDC
tSW
tCL
O3(Ay)
O4(Ay)
(Burst wraps around
to its initial state)
ADV HIGH suspends burst
Burst Flow-through Read
O2(Ay)
tHW
O1(Ay)
tCHZ
O2(Ay)
5309 drw 06
,
NOTES:
1. O1 (Ax) represents the first output from the external address Ax. O1 (Ay) represents the first output from the external address Ay; O2 (Ay) represents the next output data in the burst sequence of the base
address Ay, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. ZZ input is LOW and LBO is Don't Care for this cycle.
3. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH.
DATAOUT
OE
AD V
(Note 3)
C E, CS 1
G W , BW E, BW x
ADDRESS
ADSC
AD SP
CLK
tCYC
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Timing Waveform of Flow-Through Read Cycle (1,2)
6.42
14
Ax
(2)
Single Read
tSA
tHA
tSS
tHS
tCLZ
tCD
tOE
O1(Ax)
tOHZ
tSW
Ay
tCH
Write
I1(Ay)
tSD tHD
tCL
tHW
Az
tCD
tOLZ
O2(Az)
O3(Az)
Flow-through Burst Read
O1(Az)
tCDC
5309 drw 07
O4(Az)
,
NOTES:
1. Device is selected through entire cycle; CE and CS1 are LOW, CS0 is HIGH.
2. ZZ input is LOW and LBO is Don't Care for this cycle.
3. O1 (Ax) represents the first output from the external address Ax. I1 (Ay) represents the first input from the external address Ay; O1 (Az) represents the first output from the external address Az; O2 (Az) represents
the next output data in the burst sequence of the base address Az, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
DATAOUT
DATAIN
OE
ADV
GW
ADDRESS
ADSP
CLK
tCYC
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Timing Waveform of Combined Flow-Through Read and Write Cycles (1,2,3)
6.42
15
tHC
O3(Aw)
tSC
tSA
tHA
tSS
tHS
Ax
O4(Aw)
(1)
Ay
tCL
tOHZ
I1(Ax)
I1(Ay)
I2(Ay)
(ADV suspends burst)
tSAV
G W is ignored when ADSP initiates a cycle and is sampled on the next cycle rising edge
tCH
I2(Ay)
(2)
I3(Ay)
tHAV
I4(Ay)
tSD
I1(Az)
tHW
tSW
Az
I2(Az)
tHD
5309 drw 08
I3(Az)
Timing Waveform of Write Cycle No. 1 - GW Controlled
,
NOTES:
1. ZZ input is LOW, BWE is HIGH and LBO is Don't Care for this cycle.
2. O4 (Aw) represents the final output data in the burst sequence of the base address Aw. I1 (Ax) represents the first input from the external address Ax. I1 (Ay) represents the first input from the external
address Ay; I2 (Ay) represents the next input data in the burst sequence of the base address Ay, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the
LBO input. In the case of input I2 (Ay) this data is valid for two cycles because ADV is high and has suspended the burst.
3. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH.
DATAOUT
DATAIN
OE
ADV
(Note 3)
CE, CS 1
GW
ADDRESS
ADSC
ADSP
CLK
tCYC
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
(1,2,3)
6.42
16
tHC
Burst
Read
O3(Aw)
tSC
tSA
tHA
tSS
tHS
O4(Aw)
Ax
Ay
tCL
Single
Write
tOHZ
I1(Ax)
I1(Ay)
Burst Write
I2(Ay)
(AD V HIGH suspends burst)
I2(Ay)
BW x is ignored when ADSP initiates a cycle and is sampled on the next clock rising edge
BW E is ignored when ADSP initiates a cycle and is sampled on the next cycle rising edge
tCH
I3(Ay)
I4(Ay)
tSD
Extended
Burst Write
I1(Az)
tSAV
tHW
tSW
tHW
tSW
Az
I2(Az)
tHD
5309 drw 09
I3(Az)
Timing Waveform of Write Cycle No. 2 - Byte Controlled
NOTES:
1. ZZ input is LOW, GW is HIGH and LBO is Don't Care for this cycle.
2. O4 (Aw) represents the final output data in the burst sequence of the base address Aw. I1 (Ax) represents the first input from the external address Ax. I1 (Ay) represents the first input from the external address
Ay; I2 (Ay) represents the next input data in the burst sequence of the base address Ay, etc. where A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
In the case of input I2 (Ay) this data is valid for two cycles because ADV is high and has suspended the burst.
3. CS0 timing transitions are identical but inverted to the CE and CS1 signals. For example, when CE and CS1 are LOW on this waveform, CS0 is HIGH.
DATAOUT
DATAIN
OE
ADV
(Note 3)
CE, CS1
BWx
BWE
ADDRESS
ADSC
ADSP
CLK
tCYC
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
(1,2,3)
,
6.42
17
tSS
tSC
tSA
tHS
tOLZ
tOE
Ax
Single Read
O1(Ax)
tHC
tHA
tCH
tCL
tZZPW
Snooze Mode
NOTES:
1. Device must power up in deselected Mode.
2. LBO is Don't Care for this cycle.
3. It is not necessary to retain the state of the input registers throughout the Power-down cycle.
4. CS0 timing transitions are identical but inverted to the CE and CS1 signaals. For example, when CE and CS1 are LOW
ZZ
DATAOUT
OE
ADV
(Note 4)
CE,CS 1
GW
ADDRESS
ADSC
ADSP
CLK
tCYC
on this waveform, CS0 is HIGH.
tZZR
Az
5309 drw 13
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Timing Waveform of Sleep (ZZ) and Power-Down Modes (1,2,3)
,
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Non-Burst Read Cycle Timing Waveform
CLK
AD SP
AD SC
ADDRESS
Av
Aw
Ax
Ay
Az
G W , BW E, BW x
CE, CS 1
CS0
OE
(Av)
DATAOUT
(Aw)
(Ax)
(Ay)
NOTES:
1. ZZ input is LOW, ADV is HIGH and LBO is Don't Care for this cycle.
2. (Ax) represents the data for address Ax, etc.
3. For read cycles, ADSP and ADSC function identically and are therefore interchangable.
5309 drw 10
,
Non-Burst Write Cycle Timing Waveform
CLK
AD SP
ADSC
ADDRESS
Av
Aw
Ax
Ay
Az
(Ax)
(Ay)
(Az)
GW
CE, CS 1
CS0
DATAIN
(Av)
(Aw)
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NOTES:
1. ZZ input is LOW, ADV and OE are HIGH, and LBO is Don't Care for this cycle.
2. (Ax) represents the data for address Ax, etc.
3. Although only GW writes are shown, the functionality of BWE and BWx together is the same as GW.
4. For write cycles, ADSP and ADSC have different limitations.
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,
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
100-Pin Thin Plastic Quad Flatpack (TQFP) Package Diagram Outline
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19
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
119 Ball Grid Array (BGA) Package Diagram Outline
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20
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
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21
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Ordering Information
IDT
XXX
S
X
XX
Device
Type
Power
Speed
Package
X
Process/
Temperature Rance
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
PF
BG
BQ
100-Pin Plastic Thin Quad Flatpack (TQFP)
119 Ball Grid Array (BGA)
165 fine pitch Ball Grid Array (fBGA)
75
80
85
Access Time in Tenths of Nanoseconds
71V67703
71V67903
256K x 36 Flow-Through Burst Synchronous SRAM
512K x 18 Flow-Through Burst Synchronous SRAM
,
5309 drw 12
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22
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Datasheet Document History
12/31/99
04/26/00
Created Datasheet from 71V677 and 71V679 Datasheets
For 2.5V I/O offering, see 71V67702 AND 71V67902 Datasheets.
Add capacitance for BGA package; Insert clarification note to Absolute Max Ratings and Recommended
Operating Temperature tables.
Replace Pin U6 with TRST pin in BGA pin configuration; Add pin description note in pinout
Inserted 100 pin TQFP Package Diagram Outline
Pg. 4
Pg. 7
Pg. 18
05/24/00
07/12/00
12/18/00
10/29/01
10/22/02
04/15/03
12/20/03
Pg. 1,4,8,21
22
Pg. 5,6,7,8
Pg. 20
Pg. 5,6,8
Pg. 7
Pg. 20
Pg. 9
Pg. 1,2
Pg. 7
Pg. 8
Pg. 9
Pg. 1-23
Pg. 4,9,12,
22
Pg. 4
Pg. 7
Add new package offering, 13 x 15 fBGA
Correct note 2 on BGA and TQFP pin configuration
Correction in the 119 BGA Package Diagram Outline
Remove note from TQFP and BQ165 pinouts
Add/Remove note from BG119 pinout
Update BG 119 pinout
Updated ISB2 levels for 7.5-8.5ns.
Remove JTAG pins
Changed U2-U6 pins to DNU.
Changed P5,P7,R5 & R7 to DNU pins.
Raised specs by 10mA on 7.5ns, 8ns and 8.5ns.
Changed datasheet from Advanced to Final Release.
Added I temp to datasheet.
Updated 165 fBGA table from TBD to 7.
Updated 119BGS pin configurations- reordered I/O signals on P6, P7 (128K x 36) and P7, N6, L6, K7,
H6, G7, F6, E7, D6 (256K x 18).
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