IDT IDT7208 Cmos asynchronous fifo 65,536 x 9 Datasheet

ADVANCED
INFORMATION
IDT7208
CMOS ASYNCHRONOUS FIFO
65,536 x 9
Integrated Device Technology, Inc.
internal pointers that load and empty data on a first-in/first-out
basis. The device uses Full and Empty flags to prevent data
overflow and underflow and expansion logic to allow for
unlimited expansion capability in both word size and depth.
Data is toggled in and out of the device through the use of
the Write (W) and Read (R) pins.
The device's 9-bit width provides a bit for a control or parity
at the user’s option. It also features a Retransmit (RT) capability that allows the read pointer to be reset to its initial position
when RT is pulsed LOW. A Half-Full Flag is available in the
single device and width expansion modes.
The IDT7208 is fabricated using IDT’s high-speed CMOS
technology. It is designed for applications requiring asynchronous and simultaneous read/writes in multiprocessing, rate
buffering, and other applications.
FEATURES:
• 65536 x 9 storage capacity
• High-speed: 15ns access time
• Low power consumption
— Active: 660mW (max.)
— Power-down: 44mW (max.)
• Asynchronous and simultaneous read and write
• Fully expandable in both word depth and width
• Pin and functionally compatible with IDT720x family
• Status Flags: Empty, Half-Full, Full
• Retransmit capability
• High-performance CMOS technology
• Industrial temperature range (-40oC to +85oC) is available, tested to military electrical specifications
DESCRIPTION:
The IDT7208 is a monolithic dual-port memory buffer with
FUNCTIONAL BLOCK DIAGRAM
DATA INPUTS
(D 0 –D 8)
WRITE
CONTROL
W
•
RAM ARRAY
65,536 x 9
WRITE
POINTER
THREESTATE
BUFFERS
READ
CONTROL
R
•
•
•
RS
DATA OUTPUTS
(Q 0 –Q 8 )
•
•
•
•
FLAG
LOGIC
EXPANSION
LOGIC
XI
READ
POINTER
EF
FF
RESET
LOGIC
FL/RT
XO/HF
3274 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
COMMERCIAL TEMPERATURE RANGES
1996 Integrated Device Technology, Inc.
DECEMBER 1996
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.06
DSC-3274/1
1
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
Q0
Q1
Q2
Q3
Q8
GND
XI
FL/RT
FF
RS
Q0
Q1
NC
Q2
EF
XO/HF
Q7
Q6
Q5
Q4
R
W
29
28
27
26
25
24
23
22
21
1
5
6
7
8
9
10
11
12
13
32
31
30
3
2
4
D2
D1
D0
J32-1
D6
D7
NC
FL/RT
RS
EF
/
XO HF
Q7
Q6
Q4
Q5
FF
P28-1
INDEX
Vcc
D4
D5
D6
D7
R
XI
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
15
16
17
18
19
20
D8
D3
D2
D1
D0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Q3
Q8
GND
NC
W
D3
D8
PIN CONFIGURATIONS
NC
Vcc
D4
D5
COMMERCIAL TEMPERATURE RANGES
3274 drw 03
3274 drw 02
PLCC
TOP VIEW
DIP
TOP VIEW
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
Rating
Terminal Voltage with
Respect to GND
Commercial
Unit
–0.5 to + 7.0
V
0 to +70
°C
Temperature Under Bias
–55 to +125
°C
Storage Temperature
–55 to + 125
°C
50
mA
TA
Operating Temperature
TBIAS
TSTG
IOUT
DC Output Current
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Parameter
VCCC
Commercial Supply
Voltage
GND
Supply Voltage
Min.
Typ.
Max.
Unit
4.5
5.0
5.5
V
0
0
0
V
(1)
VIH
Input High Voltage
Commercial
2.0
—
—
V
VIL(1)
Input Low Voltage
Commercial
—
—
0.8
V
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
DC ELECTRICAL CHARACTERISTICS FOR THE 7208
(Commercial: VCC = 5.0V±10%, TA = 0°C to +70°C)
IDT7208
Commercial
tA = 20, 25, 35 ns
Symbol
Parameter
Min.
Typ.
Max.
Unit
ILI(1)
Input Leakage Current (Any Input)
–1
—
1
µA
ILO(2)
Output Leakage Current
–10
—
10
µA
VOH
Output Logic “1” Voltage IOH = –2mA
2.4
—
—
V
VOL
Output Logic “0” Voltage IOL = 8mA
—
—
0.4
V
ICC1(3)
Active Power Supply Current
ICC2(3)
Standby Current (R=W=RS=FL/RT=VIH)
ICC3(L)(3)
Power Down Current (All Input = VCC - 0.2V)
—
(4)
—
120
mA
—
—
12
mA
—
—
8
mA
NOTES:
1. Measurements with 0.4 ≤ VIN ≤ VCC.
2. R ≥ VIH, 0.4 ≤ VOUT ≤ VCC.
3. ICC measurements are made with outputs open (only capacitive loading).
4. Tested at f = 20MHz.
5.06
2
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS(1)
(Commercial: VCC = 5V ± 10%, TA = 0°C to +70°C)
Commercial
7208L20
Symbol
Parameters
fS
tRC
tA
tRR
7208L25
Min.
Max.
Shift Frequency
—
Read Cycle Time
30
Access Time
—
Read Recovery Time
10
tRPW
Read Pulse Width(2)
tRLZ
Read LOW to Data Bus LOW(3)
(3, 4)
7208L35
Min.
Max.
Min.
Max.
Unit
33.3
—
—
35
28.5
—
22.2
MHz
—
45
—
ns
20
—
—
10
25
—
35
ns
—
10
—
ns
20
—
5
—
25
—
35
—
ns
5
—
5
—
ns
ns
tWLZ
Write HIGH to Data Bus Low-Z
5
—
5
—
10
—
tDV
Data Valid from Read HIGH
5
—
5
—
5
—
ns
tRHZ
Read HIGH to Data Bus High-Z(3)
—
15
—
18
—
20
ns
tWC
Write Cycle Time
30
—
35
—
45
—
ns
tWPW
Write Pulse Width(2)
20
—
25
—
35
—
ns
tWR
Write Recovery Time
10
—
10
—
10
—
ns
tDS
Data Set-up Time
12
—
15
—
18
—
ns
tDH
Data Hold Time
0
—
0
—
0
—
ns
tRSC
Reset Cycle Time
30
—
35
—
45
—
ns
tRS
Reset Pulse Width(2)
20
—
25
—
35
—
ns
tRSS
Reset Set-up Time(3)
20
—
25
—
35
—
ns
tRTR
Reset Recovery Time
10
—
10
—
10
—
ns
tRTC
Retransmit Cycle Time
30
—
35
—
45
—
ns
tRT
Retransmit Pulse Width(2)
20
—
25
—
35
—
ns
tRTS
Retransmit Set-up Time(3)
20
—
25
—
35
—
ns
tRSR
Retransmit Recovery Time
10
—
10
—
10
—
ns
tEFL
Reset to EF LOW
—
30
—
35
—
45
ns
tHFH, tFFH
Reset to HF and FF HIGH
—
30
—
35
—
45
ns
tRTF
Retransmit LOW to Flags Valid
—
30
—
35
—
45
ns
tREF
Read LOW to EF LOW
—
20
—
25
—
30
ns
tRFF
Read HIGH to FF HIGH
—
20
—
25
—
30
ns
tRPE
Read Pulse Width after EF HIGH
20
—
25
—
35
—
ns
tWEF
Write HIGH to EF HIGH
—
20
—
25
—
30
ns
tWFF
Write LOW to FF LOW
—
20
—
25
—
30
ns
tWHF
Write LOW to HF Flag LOW
—
30
—
35
—
45
ns
tRHF
Read HIGH to HF Flag HIGH
—
30
—
35
—
45
ns
tWPF
Write Pulse Width after FF HIGH
20
—
25
—
35
—
ns
tXOL
Read/Write LOW to XO LOW
—
20
—
25
—
35
ns
tXOH
Read/Write HIGH to XO HIGH
tXI
XI
tXIR
tXIS
—
20
—
25
—
35
ns
Pulse Width(2)
20
—
25
—
35
—
ns
XI
Recovery Time
10
—
10
—
10
—
ns
XI
Set-up Time
10
—
10
—
15
—
ns
NOTES:
1.
2.
3.
4.
Timings referenced as in AC Test Conditions.
Pulse widths less than minimum are not allowed.
Values guaranteed by design, not currently tested.
Only applies to read data flow-through mode.
5.06
3
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
5V
GND to 3.0V
5ns
1.5V
1.5V
See Figure 1
1.1KΩ
D.U.T.
680Ω
30pF*
CAPACITANCE(1) (TA = +25°C, f = 1.0 MHz)
Symbol
Parameter
Condition
Max.
Unit
Input Capacitance
VIN = 0V
10
pF
Output Capacitance
VOUT = 0V
10
pF
CIN(1)
(1,2)
COUT
OR EQUIVALENT CIRCUIT
3274 drw 04
Figure 1. Output Load
NOTES:
1. This parameter is sampled and not 100% tested.
2. With output deselected.
*Includes jig and scope capacitances.
SIGNAL DESCRIPTIONS
Inputs:
DATA IN (D0–D8) — Data inputs for 9-bit wide data.
Controls:
RESET (RS) — Reset is accomplished whenever the Reset
(RS) input is taken to a LOW state. During reset, both internal
read and write pointers are set to the first location. A reset is
required after power-up before a write operation can take place.
Both the Read Enable (R) and Write Enable (W) inputs must
be in the HIGH state during the window shown in Figure 2
(i.e. tRSS before the rising edge of RS) and should not
change until tRSR after the rising edge of RS.
WRITE ENABLE (W) — A write cycle is initiated on the falling
edge of this input if the Full Flag (FF) is not set. Data set-up and
hold times must be adhered-to, with respect to the rising edge
of the Write Enable (W). Data is stored in the RAM array
sequentially and independently of any on-going read operation.
After half of the memory is filled, and at the falling edge of the
next write operation, the Half-Full Flag (HF) will be set to LOW,
and will remain set until the difference between the write pointer
and read pointer is less-than or equal to one-half of the total
memory of the device. The Half-Full Flag (HF) is reset by the
rising edge of the read operation.
To prevent data overflow, the Full Flag (FF) will go LOW on
the falling edge of the last write signal, which inhibits further write
operations. Upon the completion of a valid read operation, the
Full Flag (FF) will go HIGH after tRFF, allowing a new valid write
to begin. When the FIFO is full, the internal write pointer is
blocked from W, so external changes in W will not affect the FIFO
when it is full.
READ ENABLE (R) — A read cycle is initiated on the falling
edge of the Read Enable (R), provided the Empty Flag (EF) is not
set. The data is accessed on a First-In/First-Out basis, independent of any ongoing write operations. After Read Enable (R)
goes HIGH, the Data Outputs (Q0 through Q8) will return to a
high-impedance condition until the next Read operation. When
all the data has been read from the FIFO, the Empty Flag (EF)
will go LOW, allowing the “final” read cycle but inhibiting further
read operations, with the data outputs remaining in a highimpedance state. Once a valid write operation has been accomplished, the Empty Flag (EF) will go HIGH after tWEF and a valid
Read can then begin. When the FIFO is empty, the internal read
pointer is blocked from R so external changes will not affect the
FIFO when it is empty.
FIRST LOAD/RETRANSMIT (FL/RT) — This is a dualpurpose input. In the Depth Expansion Mode, this pin is
grounded to indicate that it is the first device loaded (see
Operating Modes). The Single Device Mode is initiated by
grounding the Expansion In (XI).
The IDT7208 can be made to retransmit data when the
Retransmit Enable Control (RT) input is pulsed LOW. A retransmit operation will set the internal read pointer to the first location
and will not affect the write pointer. The status of the Flags will
change depending on the relative locations of the read and write
pointers. Read Enable (R) and Write Enable (W) must be in the
HIGH state during retransmit. This feature is useful when less
than 65,536 writes are performed between resets. The retransmit feature is not compatible with the Depth Expansion Mode.
EXPANSION IN (XI) — This input is a dual-purpose pin.
Expansion In (XI) is grounded to indicate an operation in the
single device mode. Expansion In (XI) is connected to Expansion Out (XO) of the previous device in the Depth Expansion or
Daisy-Chain Mode.
5.06
4
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
COMMERCIAL TEMPERATURE RANGES
and will remain set until the difference between the write pointer
and read pointer is less than or equal to one half of the total
memory of the device. The Half-Full Flag (HF) is then reset by
the rising edge of the read operation.
In the Depth Expansion Mode, Expansion In (XI) is connected to Expansion Out (XO) of the previous device. This
output acts as a signal to the next device in the Daisy Chain by
providing a pulse to the next device when the previous device
reaches the last location of memory. There will be an XO pulse
when the Write pointer reaches the last location of memory, and
an additional XO pulse when the Read pointer reaches the last
location of memory.
Outputs:
FULL FLAG (FF) — The Full Flag (FF) will go LOW, inhibiting
further write operations, when the device is full. If the read
pointer is not moved after Reset (RS), the Full Flag (FF) will go
LOW after 65,536 writes.
EMPTY FLAG (EF) — The Empty Flag (EF) will go LOW,
inhibiting further read operations, when the read pointer is equal
to the write pointer, indicating that the device is empty.
EXPANSION OUT/HALF-FULL FLAG (XO/HF) — This is a
dual-purpose output. In the single device mode, when Expansion In (XI) is grounded, this output acts as an indication of a halffull memory.
After half of the memory is filled, and at the falling edge of the
next write operation, the Half-Full Flag (HF) will be set to LOW
DATA OUTPUTS (Q0-Q8) — Q0-Q8 are data outputs for 9bit wide data. These outputs are in a high-impedance condition
whenever Read (R) is in a HIGH state.
t RSC
t RS
RS
t RSS
t RSR
W
t RSS
R
t EFL
EF
t HFH , t FFH
,
HF FF
3274 drw 05
NOTE:
1. W and R = VIH around the rising edge of RS.
Figure 2. Reset
t RC
t RPW
t RR
tA
tA
R
t DV
t RLZ
DATA
Q 0 –Q 8
OUT
VALID
t RHZ
DATA
OUT
VALID
t WC
t WPW
t WR
W
t DS
D 0 –D 8
DATA
t DH
IN
DATA
VALID
IN
VALID
3274 drw 06
Figure 3. Asynchronous Write and Read Operation
5.06
5
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
COMMERCIAL TEMPERATURE RANGES
IGNORED
WRITE
LAST WRITE
FIRST READ
R
W
t WFF
t RFF
FF
3274 drw 07
Figure 4. Full FlagTiming From Last Write to First Read
IGNORED
READ
LAST READ
FIRST WRITE
W
R
t REF
t WEF
EF
tA
DATAOUT
VALID
3274 drw 08
Figure 5. Empty Flag Timing From Last Read to First Write
t
RTC
t RT
RT
t RTS
t RTR
,
W R
RTF
,
,
FLAG VALID
HF EF FF
3274 drw 09
NOTE:
1. EF, FF and HF may change status during Retransmit, but flags will be valid at tRTC.
Figure 6. Retransmit
5.06
6
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
COMMERCIAL TEMPERATURE RANGES
W
t WEF
EF
t RPE
R
3274 drw 10
Figure 7. Minimum Timing for an Empty Flag Coincident Read Pulse.
R
t
RFF
FF
t WPF
W
3274 drw 11
Figure 8. Minimum Timing for an Full Flag Coincident Write Pulse.
W
t RHF
R
t WHF
HF
HALF-FULL OR LESS
MORE THAN HALF-FULL
HALF-FULL OR LESS
3274 drw 12
Figure 9. Half-Full Flag Timing
W
WRITE TO
LAST PHYSICAL
LOCATION
READ FROM
LAST PHYSICAL
LOCATION
R
t XOL
t XOH
t XOL
t XOH
XO
3274 drw 13
Figure 10. Expansion Out
5.06
7
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
t
XI
COMMERCIAL TEMPERATURE RANGES
t XIR
XI
t XIS
W
WRITE TO
FIRST PHYSICAL
LOCATION
t XIS
READ FROM
FIRST PHYSICAL
LOCATION
R
3274 drw 14
Figure 11. Expansion In
OPERATING MODES:
Care must be taken to assure that the appropriate flag is
monitored by each system (i.e. FF is monitored on the device
where W is used; EF is monitored on the device where R is
used).
tus flags (EF, FF and HF) can be detected from any one device.
Figure 13 demonstrates an 18-bit word width by using two
IDT7208s. Any word width can be attained by adding additional IDT7208s (Figure 13).
Single Device Mode
A single IDT7208 may be used when the application
requirements are for 65,536 words or less. The IDT7208 is
in a Single Device Configuration when the Expansion In (XI)
control input is grounded (see Figure 12).
Bidirectional Operation
Applications which require data buffering between two
systems (each system capable of Read and Write operations)
can be achieved by pairing IDT7208s as shown in Figure 16.
Both Depth Expansion and Width Expansion may be used in
this mode.
Depth Expansion
The IDT7208 can easily be adapted to applications when
the requirements are for greater than 65,536 words. Figure 14
demonstrates Depth Expansion using three IDT7208s. Any
depth can be attained by adding additional IDT7208s. The
IDT7208 operates in the Depth Expansion mode when the
following conditions are met:
1. The first device must be designated by grounding the First
Load (FL) control input.
2. All other devices must have FL in the HIGH state.
3. The Expansion Out (XO) pin of each device must be tied to
the Expansion In (XI) pin of the next device. See Figure 14.
4. External logic is needed to generate a composite Full Flag
(FF) and Empty Flag (EF). This requires the ORing of all
EFs and ORing of all FFs (i.e. all must be set to generate the
correct composite FF or EF). See Figure 14.
5. The Retransmit (RT) function and Half-Full Flag (HF) are
not available in the Depth Expansion Mode.
USAGE MODES:
Width Expansion
Word width may be increased simply by connecting the
corresponding input control signals of multiple devices. Sta-
Data Flow-Through
Two types of flow-through modes are permitted, a read
flow-through and write flow-through mode. For the read flowthrough mode (Figure 17), the FIFO permits a reading of a
single word after writing one word of data into an empty FIFO.
The data is enabled on the bus in (tWEF + tA) ns after the rising
edge of W, called the first write edge, and it remains on the bus
until the R line is raised from LOW-to-HIGH, after which the
bus would go into a three-state mode after tRHZ ns. The EF line
would have a pulse showing temporary deassertion and then
would be asserted.
In the write flow-through mode (Figure 18), the FIFO
permits the writing of a single word of data immediately after
reading one word of data from a full FIFO. The R line causes
the FF to be deasserted but the W line being LOW causes it to
be asserted again in anticipation of a new data word. On the
rising edge of W, the new word is loaded in the FIFO. The W
line must be toggled when FF is not asserted to write new data
in the FIFO and to increment the write pointer.
Compound Expansion
The two expansion techniques described above can be
applied together in a straightforward manner to achieve large
FIFO arrays (see Figure 15).
5.06
8
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
COMMERCIAL TEMPERATURE RANGES
(HALF–FULL FLAG)
(HF)
WRITE (W)
READ ( R)
9
IDT
7208
DATA IN (D)
FULL FLAG ( FF)
9
DATA OUT (Q)
EMPTY FLAG (EF)
RETRANSMIT (RT)
RESET (RS)
EXPANSION IN ( XI)
3274 drw 15
Figure 12. Block Diagram of 65,536 x 9 FIFO Used in Single Device Mode
HF
18
HF
9
9
DATA IN (D)
WRITE (W)
IDT
7208
READ (R)
IDT
7208
FULL FLAG ( FF)
EMPTY FLAG (EF)
RESET (RS)
RETRANSMIT (RT)
9
9
XI
XI
18
DATA
OUT (Q)
3274 drw 16
NOTE:
1. Flag detection is accomplished by monitoring the FF,
Do not connect any output signals together.
EF
and HF signals on either (any) device used in the width expansion configuration.
Figure 13. Block Diagram of 65,536 x 18 FIFO Memory Used in Width Expansion Mode
5.06
9
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
COMMERCIAL TEMPERATURE RANGES
TRUTH TABLES
TABLE I – RESET AND RETRANSMIT
SINGLE DEVICE CONFIGURATION/WIDTH EXPANSION MODE
Inputs
Mode
Reset
Internal Status
Outputs
RS
RT
XI
Read Pointer
Write Pointer
EF
FF
HF
0
X
0
Location Zero
Location Zero
0
1
1
Retransmit
1
0
0
Location Zero
Unchanged
X
X
X
Read/Write
1
1
0
Increment (1)
Increment (1)
X
X
X
NOTE:
1. Pointer will Increment if flag is HIGH.
7208 tbl 07
TABLE II – RESET AND FIRST LOAD
DEPTH EXPANSION/COMPOUND EXPANSION MODE
Inputs
Mode
Internal Status
Outputs
RS
FL
XI
Read Pointer
Write Pointer
EF
FF
Reset First Device
0
0
(1)
Location Zero
Location Zero
0
1
Reset all Other Devices
0
1
(1)
Location Zero
Location Zero
0
1
Read/Write
1
X
(1)
X
X
X
X
7208 tbl 08
NOTES:
1. XI is connected to XO of previous device. See Figure 14.
2. RS = Reset Input, FL/RT = First Load/Retransmit, EF = Empty Flag Output, FF = Full Flag Output, XI = Expansion Input, HF = Half-Full Flag Output
XO
W
FF
D
9
IDT
7208
R
EF
9
9
Q
FL
VCC
XI
XO
FF
FULL
9
IDT
7208
EF
EMPTY
FL
XI
XO
FF
9
IDT
7208
EF
RS
FL
XI
3274 drw 17
Figure 14. Block Diagram of 196,608 x 9 FIFO Memory (Depth Expansion)
5.06
10
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
COMMERCIAL TEMPERATURE RANGES
Q 0 –Q 8
Q 9 –Q 17
Q (N-8)
-Q N
Q (N-8)
-Q N
•••
Q 0 –Q 8
Q 9 –Q 17
IDT7208
DEPTH
EXPANSION
BLOCK
IDT7208
DEPTH
EXPANSION
BLOCK
,
IDT7208
DEPTH
EXPANSION
BLOCK
,
•••
R W RS
D 0 -D 8
D 9 -D 17
D (N-8) -D N
D 0 –D N
•••
D 9 -D N
NOTES:
1. For depth expansion block see section on Depth Expansion and Figure 14.
2. For Flag detection see section on Width Expansion and Figure 13.
D 18 -D N
D (N-8) -D N
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Figure 15. Compound FIFO Expansion
WA
FF A
IDT
7208
IDT
7201A
D A 0-8
RB
EF B
HF B
Q B 0-8
SYSTEM A
SYSTEM B
Q A 0-8
RA
D B 0-8
IDT
7208
WB
HF A
FF B
EF A
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Figure 16. Bidirectional FIFO Operation
DATA IN
W
t RPE
R
EF
t WEF
t REF
tA
t WLZ
DATA OUT
DATA VALID
OUT
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Figure 17. Read Data Flow-Through Mode
5.06
11
IDT7208 CMOS ASYNCHRONOUS FIFO
65,536 x 9
COMMERCIAL TEMPERATURE RANGES
R
t
WPF
W
t RFF
FF
t WFF
DATA
DATA IN
t
DATA
IN
DH
VALID
t DS
A
DATA
OUT
t
OUT
VALID
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Figure 18. Write Data Flow-Through Mode
ORDERING INFORMATION
IDT
XXXX
X
XX
X
X
Device
Type
Power
Speed
Package
Process/
Temperature
Range
5.06
Blank
Commercial (0°C to +70°C)
P
J
Plastic DIP
Plastic Leaded Chip Carrier
20
25
35
Commercial Only
Commercial Only
Commercial Only
L
Low Power
7208
65,536 x 9 FIFO
Access Time (tA)
Speed in ns
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12
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