Vishay IL766-1 Optocoupler, photodarlington output, ac input, internal rbe Datasheet

IL766/ ILD766
VISHAY
Vishay Semiconductors
Optocoupler, Photodarlington Output, AC Input, Internal RBE
Features
•
•
•
•
•
•
•
Internal RBE for Better Stability
BVCEO > 60 V
AC or Polarity Insensitive Inputs
Built-In Reverse Polarity Input Protection
Industry Standard DIP Package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A/C 1
6 B
C/A 2
5 C
NC 3
4 E
A/C 1
8 E
C/A 2
7 C
A/C 3
6 C
C/A 4
5 E
i179039
e3
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• BSI IEC60950 IEC60065
Pb
Pb-free
The IL766 is single channel optocouplers. The
ILD766 has two isolated channels in a single DIP
package.
Order Information
Part
Remarks
Applications
ILD766-1
CTR > 500 @ IF = 2.0 mA, DIP-8
Designed for applications requiring detection or monitoring of AC signals.
ILD766-2
CTR > 500 @ IF = 1.0 mA, DIP-8
IL766-1
CTR > 500 @ IF = 2.0 mA, DIP-6
Description
IL766-2
CTR > 500 @ IF = 1.0 mA, DIP-6
IL766-1X007
CTR > 500 @ IF = 2.0 mA, SMD-6 (option 7)
The IL766/ ILD766 are bidirectional input optically
coupled isolators. They consist of two Gallium Arsenide infrared emitting diodes coupled to a silicon
NPN photodarlington per channel.
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Each Channel
Parameter
Symbol
Value
Unit
IF
60
mA
Power dissipation, single channel
Pdiss
200
mW
Power dissipation, dual channel
Pdiss
90
mW
Forward continuous current
Test condition
Derate linearly from 25 °C, single channel
2.6
mW/°C
Derate linearly from 25 °C, dual channel
1.2
mW/°C
Document Number 83643
Rev. 1.4, 26-Oct-04
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1
IL766/ ILD766
VISHAY
Vishay Semiconductors
Output
Each Channel
Symbol
Value
Unit
Collector-emitter breakdown voltage
Parameter
Test condition
BVCEO
60
V
Collector-base breakdown voltage
BVCBO
70
V
Power dissipation
Pdiss
Derate linearly from 25 °C
100
mW
1.33
mW/°C
Coupler
Symbol
Value
Unit
Isolation test voltage
Parameter
t = 1.0 sec.
Test condition
VISO
5300
VRMS
Isolation resistance
Tamb = 25 °C
RIO
≥ 1012
Ω
Tamb = 100 °C
RIO
≥
Ω
1011
Total power dissipation (LED plus detector),
single channel
Ptot
250
mW
Total power dissipation (LED plus detector),
dual channel
Ptot
400
mW
Derate linearly from 25 °C, single channel
3.3
mW/°C
Derate linearly from 25 °C, dual channel
5.3
mW/°C
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Comparative tracking index per DIN IEC
112/VDE0303, part 1
175
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to +100
°C
Lead soldering time at 260 °C
Tsld
10
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = ± 10 mA
Forward voltage
Symbol
Min
VF
Typ.
Max
Unit
1.2
1.5
V
Max
Unit
Output
Symbol
Min
Typ.
Collector-emitter breakdown voltage
Parameter
IC = 1.0 mA
Test condition
BVCEO
60
75
Collector-base breakdown voltage
IC = 10 µA
BVCBO
60
90
Collector-emitter leakage current
VCE = 10 V
ICEO
V
V
10
100
nA
Typ.
Max
Unit
1.0
V
Coupler
Parameter
Saturation voltage, collector-emitter
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2
Test condition
IF = ± 10 mA,
IC = 10 mA
Symbol
VCEsat
Min
Document Number 83643
Rev. 1.4, 26-Oct-04
IL766/ ILD766
VISHAY
Vishay Semiconductors
Current Transfer Ratio
Parameter
Test condition
DC Current Transfer Ratio
VCE = 5.0 V, IF = ± 2.0 mA,
Symbol
Min
CTRDC
500
Symbol
Min
Typ.
Max
Unit
%
Switching Characteristics
Parameter
Test condition
Rise time, fall time
VCC = 10 V, IF = ± 2.0 mA, RL = 100 Ω
Typ.
tr , tf
Max
Unit
µs
100
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
200
60
IC Collector Current (mA)
180
Input Current - IF (mA)
40
20
0
-20
160
140
120
100
80
-40
60
40
20
-60
-2.0
-1.0
0
Input Voltage - VF (V)
iil766_01
1.0
2.0
iil766_03
0
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VCE Collector Voltage (V)
iil766_03
Figure 1. Input Characteristics
Figure 3. Transistor Output Current vs. Voltage
10
80
ID Dark Current (nA)
IC Collector Current (mA)
100
90
70
60
50
40
30
4
3
10
10
2
10
1
20
10
0
1
0
il766_02
iil766_02
10
20 30 40 50 60 70 80
Collector Voltage (V)
90 100
Figure 2. Transistor Current vs. Voltage
Document Number 83643
Rev. 1.4, 26-Oct-04
l766_04
iil766_04
0
25
50
75
100
125
Temperature (°C)
Figure 4. ICEO at VCE = 10 V vs. Temperature
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IL766/ ILD766
VISHAY
Vishay Semiconductors
600
10
NCTRce - Normalized CTR
Normalized @
I F = 10 mA
TA = 25°C
R L = 10k
500
V CE = 5 V
400
Tfall (µs)
1
300
200
.1
R L = 1k
V CE = 1 V
100
0
.01
.1
1
10
I F - LED Current - mA
iil766_05
1
100
10
I F - LED Current - mA
iil766_08
Figure 5. Normalized CTR vs. Forward Current
Figure 8. tfall vs. Forward Current
20
30
R L = 1k
Trise (µs)
20
Tphl (µs)
RL = 1k
RL = 10k
10
.0
10
R L = 10k
0
10
1
iil766_06
1
iil766_09
IF - LED Current - mA
Figure 6. tr vs. Forward Current
10
I F - LED Current - mA
Figure 9. ton vs. Forward Current
700
600
IF
F=10 KHz,
RL
DF=50%
VO
tD
tR
500
Toff (µs)
VO
R L = 10k
VCC =10 V
400
300
tPLH
tPHL
tS
VTH=1.5 V
tF
200
IF =2 mA
R L = 1k
100
0
1
iil766_07
iil766_10
Figure 7. Saturated Switching Characteristics MeasurementsSchematic and Waveform
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4
10
I F - LED Current - mA
Figure 10. toff vs. Forward Current
Document Number 83643
Rev. 1.4, 26-Oct-04
IL766/ ILD766
VISHAY
Vishay Semiconductors
400
30
R L = 1k
300
R L = 10k
Tplh (µs)
Ton (µs)
20
R L = 10k
200
10
100
R L = 1k
0
0
1
1
10
I F - LED Current - mA
iil766_11
Figure 11. tphl vs. Forward Current
10
I F - LED Current - mA
iil766_12
Figure 12. tplh vs. Forward Current
Package Dimensions in Inches (mm)
3
2
1
4
5
6
pin one ID
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.114 (2.90)
.130 (3.0)
.010 (.25)
typ.
.300–.347
(7.62–8.81)
i178004
Document Number 83643
Rev. 1.4, 26-Oct-04
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IL766/ ILD766
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
3
2
1
5
6
7
8
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
i178006
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Option 7
.300 (7.62)
TYP.
.255 (6.5)
.248 (6.3)
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
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18447
Document Number 83643
Rev. 1.4, 26-Oct-04
IL766/ ILD766
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83643
Rev. 1.4, 26-Oct-04
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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