EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A zFeatures 1) Two DTA144Ys in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMB9 (1) 0.5 0.13 1.2 1.6 Each lead has same dimensions ROHM : EMT6 zStructure Epitaxial planar type PNP silicon transistor (Built-in resistor type) 2.0 0.9 Abbreviated symbol : B9 IMB9A (4) (5) (6) R1 R2 (6) (1) 0.95 0.95 1.9 2.9 R2=47kΩ (1) (2) R1=10kΩ (5) R2 R1 (3) (2) (4) DTr2 (3) DTr1 DTr1 DTr2 IMB9A (6) (3) (2) (1) R1 R2 0.3 EMB9 / UMB9N R2 R1 (4) (5) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 zEquivalent circuit R2=47kΩ 0to0.1 0.7 0.15 2.1 0.1Min. R1=10kΩ 1.3 (3) (2) (1) 1.25 The following characteristics apply to both DTr1 and DTr2. 0.65 (6) (5) 0.2 (4) UMB9N 0.65 Abbreviated symbol : B9 1.6 0.3to0.6 zAbsolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Symbol Limits Unit VCC −50 V VIN −40 0to0.1 1.1 0.8 0.15 2.8 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : B9 V 6 Output current EMB9, UMB9N Power dissipation IMB9A IO −70 IC (Max.) −100 Pd 150 (TOTAL) 300 (TOTAL) mA ∗1 mW Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 1/2 EMB9 / UMB9N / IMB9A Transistors zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI (off) − − −0.3 VI (on) −1.4 − − VO (on) − −0.1 −0.3 V Input voltage Output voltage Unit Conditions VCC=−5V, IO=−100µA V VO=−0.3V, IO=−1mA IO/II=−5mA/−0.25mA II − − −0.88 mA VI=−5V IO (off) − − −0.5 µA VCC=−50V, VI=0V DC current gain GI 68 − − − VO=−5V, IO=−5mA Transition frequency fT − 250 − MHz VCE=−10mA, IE=5mA, f=100MHz Input resistance R1 7 10 13 kΩ − Resistance ratio R2 / R1 3.7 4.7 5.7 − − Input current Output current ∗ ∗ Transition frequency of the device zPackaging specifications Package Type Taping Code T2R TN T148 Basic ordering unit (pieces) 8000 3000 3000 EMB9 UMB9N IMB9A zElectrical characteristic curves −100 −10m VO=−0.3V 1k VCC=−5V −5m −50 500 −20 −2 −1m −500µ −10 −5 DC CURRENT GAIN : GI OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) −2m Ta=100˚C 25˚C −40˚C −200µ Ta=−40˚C 25˚C 100˚C −100µ −1 −500m −200m −50µ −20µ −10µ −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 100 50 20 10 5 −5µ 2 −2µ −100m −100µ −200µ −500µ −1m 200 VO=−5V Ta=100˚C 25˚C −40˚C −1µ 1 0 −0.5 −1 −1.5 −2 −2.5 −3 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current −1000m lO/lI =20 OUTPUT VOLTAGE : VO (on) (V) −500m Ta=100˚C 25˚C −40˚C −200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/2