Rohm IMN10 Switching diode ultra high speed switching high reliability. Datasheet

Switching Diode
Datasheet
IMN10
Application
Dimensions (Unit : mm)
Ultra high speed switching
Land size figure (Unit : mm)
19
2.9±0.2
0.3±0.1 各リードとも同寸法
Each lead has same dimension
0.05
(5)
0.95 0.95
(6)
2 .4
(4)
0.15±0.1
0.06
1.0M IN .
+0.2
-0.1
1.6
1) Small mold type. (SMD6)
0.6
0.45 0.35 0.35 0.45
2.8±0.2
Features
0~0.1
(3)
(2)
(1)
0.8±0.1
1.9±0.2
0.95
ROHM : SMD6
JEDEC : S0T-457
JEITA : SC-74
Anode
Structure
1.1±0.2
0.1
0.95
0.8MIN.
SMD6
0.3~0.6
2) High reliability.
week code
1Pin Mark
Cathode
Construction
Taping specifications (Unit : mm)
4.0±0.1
φ1.55±0.1
0
2.0±0.05
0.3±0.1
φ1.05MIN
4.0±0.1
3.2±0.1
3.2±0.1
8.0±0.2
5.5±0.2
0~0.5
3.2±0.1
3.5±0.05
1.75±0.1
Silicon epitaxial planar
1.35±0.1
Absolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
80
V
Reverse voltage (DC)
VR
80
V
Forward current (Single)
IFM
300
mA
Forward current (Double)
IFM
450
mA
Average rectified forward current (single)
Io
100
mA
Isurge
4
A
Power dissipation (TOTAL)(*1)
Pd
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
Surge current (t=1s)
(*1) Not exceed 200mW per element.
Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF
-
-
1.2
V
Reverse current
IR
-
-
0.1
A VR=70V
Capacitance between terminals
Ct
-
-
3.5
pF VR=6V, f=1MHz
Reverse recovery time
trr
-
-
4
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1/3
ns
IF=100mA
VR=6V, IF=5mA,RL=50
2013.02 - Rev.D
Data Sheet
IMN10
100
10000
1000
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : IF(mA)
Ta = 75°C
Ta = 125°C
10
Ta = 150°C
1
Ta = 25°C
Ta = 125°C
Ta = 150°C
100
Ta = 75°C
10
Ta = 25°C
1
Ta = 25°C
0.1
Ta = 25°C
0.01
0.1
0
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
20
30
40
50
FORWARD VOLTAGE : VF(mV)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
80
Ta=25°C
IF=100mA
n=30pcs
f = 1MHz
1
940
AVE : 921.7mV
930
920
910
900
0.1
0
5
10
15
20
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
1.5
100
Ta=25°C
VR=80V
n=10pcs
80
70
60
50
40
AVE : 9.655nA
Ta=25°C
f=1MHz
VR=6V
n=10pcs
1.4
1.3
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
90
REVERSE CURRENT : IR(nA)
70
950
10
30
60
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1.2
AVE : 1.040pF
1.1
1
0.9
0.8
20
0.7
10
0.6
0
0.5
Ct DISPERSION MAP
IR DISPERSION MAP
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2/3
2013.01 - Rev.D
Data Sheet
IMN10
10
20
Ta=25°C
VR=6V
IF=5mA
RL=50
n=10pcs
PEAK SURGE
FORWARD CURRENT : IFSM(A)
RESERVE RECOVERY TIME : trr(ns)
9
IFSM
8.3ms
15
1cyc.
10
AVE : 3.50A
5
8
7
6
5
4
AVE : 1.93ns
3
2
1
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
5
100
IFSM
IFSM
8.3ms 8.3ms
time
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
4
1cyc.
3
2
1
0
10
1
1
10
100
0.1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
1000
10
9
8
100
Rth(j-c)
Mounted on epoxy board
10
IM=10mA
IF=100mA
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE : Rth (°C/W)
Rth(j-a)
7
6
5
AVE : 2.54kV
4
3
2
AVE : 0.97kV
time
1
1ms 300s
1
0.001
0
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
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© 2013 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
3/3
2013.02 - Rev.D
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
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R1102A
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