Rohm IMX2 General purpose (dual transistors) Datasheet

EMX2 / UMX2N / IMX2
Transistors
General purpose (dual transistors)
EMX2 / UMX2N / IMX2
zExternal dimensions (Unit : mm)
zFeatures
1) Two 2SC2412AK chips in a EMT or UMT or SMT
package.
zEquivalent circuits
(5)
(6)
(3)
(4)
(2)
(1)
Tr1
Tr2
(4) (5)
(5)
(6)
Tr1
Tr2
(6)
(1)
0.5
IMX2
(2)
1.2
1.6
0.13
EMX2 / UMX2N
(3)
(4)
0.5 0.5
1.0
1.6
0.22
EMX2
(3) (2)
(1)
ROHM : EMT6
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
EMX2 / UMX2N
PC
IMX2
Junction temperature
Storage temperature
150(TOTAL)
300(TOTAL)
mW
Tj
150
°C
Tstg
−55 to +150
°C
∗1
1.25
∗2
2.1
0.1Min.
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
0~0.1
Collector power
dissipation
1.3
2.0
mA
0.9
150
0.65
V
IC
Collector current
0.65
7
0.7
VEBO
(3)
V
Emitter-base voltage
(2)
V
50
(1)
60
VCEO
(4)
VCBO
Collector-emitter voltage
(6)
Collector-base voltage
UMX2N
(5)
Unit
0.2
Limits
0.15
Symbol
Parameter
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
zPackage, marking, and packaging specifications
3000
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
1.1
3000
0.95 0.95
1.9
2.9
8000
IMX2
0.8
Basic ordering unit (pieces)
X2
(1)
T108
(2)
X2
TR
(3)
X2
T2R
(6)
Marking
Code
(5)
SMT6
(4)
IMX2
UMT6
0~0.1
UMX2N
EMT6
0.3
EMX2
0.15
Type
Package
Each lead has same dimensions
Rev.A
1/3
EMX2 / UMX2N / IMX2
Transistors
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
60
−
−
V
IC=50µA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
ICBO
7
−
−
−
−
0.1
V
µA
IE=50µA
VCB=60V
VEB=7V
Emitter cutoff current
Collector-emitter saturation voltage
Conditions
IEBO
−
−
0.1
µA
VCE(sat)
−
−
0.4
V
IC/IB=50mA/5mA
hFE
120
−
560
−
VCE=6V, IC=1mA
DC current transfer ratio
Transition frequency
fT
−
180
−
MHz
Output capacitance
Cob
−
2
3.5
pF
VCE=12V, IE= −2mA, f=100MHz ∗
VCB=12V, IE=0mA, f=1MHz
∗Transition frequency of the device.
zElectrical characteristics curves
COLLECTOR CURRENT : IC (mA)
2
1
25°C
−55°C
5
0.5
0.2
0.20mA
0.15mA
40
0.10mA
20
0.05mA
IB=0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig.1
0.4
0.8
1.2
Fig.2
Grounded emitter propagation
characteristics
500
DC CURRENT GAIN : hFE
Ta=100°C
VCE=5V
3V
1V
100
50
20
10
0.2
0.5 1
2
5
10 20
50 100 200
VCE=5V
25°C
200
−55°C
100
50
20
10
0.2
27µA
0.5 1
2
5
10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
Fig.5 DC current gain vs.
collector current ( ΙΙ )
24µA
21µA
6
18µA
15µA
12µA
4
9µA
6µA
2
3µA
0
0
2.0
30µA
Ta=25°C
8
4
IB=0A
12
8
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Grounded emitter output
characteristics ( Ι )
Ta=25°C
200
1.6
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
DC CURRENT GAIN : hFE
0.25mA
60
0
0.1
0
500
80
10
Fig.3
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
10
Ta=100°C
COLLECTOR CURRENT : IC (mA)
20
0.50mA
mA
0.45 A
0.40m
A
m
35
0.
0.30mA
Ta=25°C
VCE=6V
COLLECTOR CURRENT : IC (mA)
100
50
Grounded emitter output
characteristics ( ΙΙ )
0.5
Ta=25°C
0.2
IC/IB=50
20
10
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Rev.A
2/3
EMX2 / UMX2N / IMX2
IC/IB=10
0.2
Ta=100°C
25°C
−55°C
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
0.5
IC/IB=50
Ta=100°C
25°C
−55°C
0.2
0.1
0.05
0.02
0.01
0.2
COLLECTOR CURRENT : IC (mA)
5
Co
b
1
0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Ta=25°C
f=1MHz
IE=0A
IC=0A
2
2
5
10
20
50 100
Ta=25°C
VCE=6V
500
200
100
50
−0.5 −1
−2
−5
−10 −20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
20
Cib
0.5 1
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
10
TRANSITION FREQUENCY : fT (MHz)
0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Transistors
Fig.9 Gain bandwidth product vs.
emitter current
Ta=25°C
f=32MHZ
VCB=6V
200
100
50
20
10
−0.2
−0.5
−1
−2
−5
−10
EMITTER CURRENT : IE (mA)
Fig.11 Base-collector time constant
vs. emitter current
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Similar pages