IN74ACT640 OCTAL 3-STATE INVERTING BUS TRANSCEIVER High-Speed Silicon-Gate CMOS • • • • The IN74ACT640 is identical in pinout to the LS/ALS640, HC/HCT640. The IN74ACT640 may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. The IN74ACT640 is a 3-state transceiver that is used for 2way asynchronous communication between data buses. The device has an active-low Output Enable pin, which is used to place the I/O ports into high-impedance states. The Direction control determines whether data flows from A to B or from B to A. • TTL/NMOS Compatible Input Levels Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 µA; 0.1 µA @ 25°C Outputs Source/Sink 24 mA ORDERING INFORMATION IN74ACT640N Plastic IN74ACT640DW SOIC TA = -40° to 85° C for all packages PIN ASSIGNMENT LOGIC DIAGRAM FUNCTION TABLE Control Inputs Output Direction Enable L L PIN 20=VCC PIN 10 = GND L H H X X = don’t care 1 Operation Data Transmitted from Bus B to Bus A (inverted) Data Transmitted from Bus A to Bus B (inverted) Buses Isolated (High Impedance State) IN74ACT640 MAXIMUM RATINGS* Symbol Parameter Value Unit VCC DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V VIN DC Input Voltage (Referenced to GND) -0.5 to VCC +0.5 V VOUT DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V IIN DC Input Current, per Pin mA ±20 IOUT DC Output Sink/Source Current, per Pin mA ±50 ICC DC Supply Current, VCC and GND Pins mA ±50 PD Power Dissipation in Still Air, Plastic DIP+ 750 mW SOIC Package+ 500 Tstg Storage Temperature -65 to +150 °C 260 TL Lead Temperature, 1 mm from Case for 10 °C Seconds (Plastic DIP or SOIC Package) * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC DC Supply Voltage (Referenced to GND) VIN, VOUT DC Input Voltage, Output Voltage (Referenced to GND) TJ Junction Temperature (PDIP) TA Operating Temperature, All Package Types IOH Output Current - High IOL Output Current - Low t r, tf Input Rise and Fall Time * VCC =4.5 V VCC =5.5 V (except Schmitt Inputs) * VIN from 0.8 V to 2.0 V Min 4.5 0 -40 0 0 Max 5.5 VCC Unit V V 140 +85 -24 24 10 8.0 °C °C mA mA ns/V This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 2 IN74ACT640 DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND) Guaranteed VCC Limits Symbol Parameter Test Conditions V 25 °C -40°C to 85°C VIH Minimum High- VOUT=0.1 V or VCC-0.1 V 4.5 2.0 2.0 Level Input 5.5 2.0 2.0 Voltage VIL Maximum Low - VOUT=0.1 V or VCC-0.1 V 4.5 0.8 0.8 Level Input 5.5 0.8 0.8 Voltage VOH Minimum High- IOUT ≤ -50 µA 4.5 4.4 4.4 Level Output 5.5 5.4 5.4 Voltage * VIN=VIH or VIL 3.76 3.86 IOH=-24 mA 4.5 4.76 4.86 5.5 IOH=-24 mA VOL Maximum Low- IOUT ≤ 50 µA 4.5 0.1 0.1 Level Output 5.5 0.1 0.1 Voltage * VIN=VIH or VIL 0.44 0.36 IOL=24 mA 4.5 0.44 0.36 5.5 IOL=24 mA IIN Maximum Input VIN=VCC or GND 5.5 ±0.1 ±1.0 Leakage Current 5.5 1.5 Additional Max. VIN=VCC - 2.1 V ∆ICCT ICC/Input IOZ Maximum Three- VIN(OE)= VIH or VIL 5.5 ±0.6 ±6.0 State Leakage VIN=VCC or GND Current VOUT=VCC or GND VOLD=1.65 V Max IOLD +Minimum 5.5 75 Dynamic Output Current VOHD=3.85 V Min IOHD +Minimum 5.5 -75 Dynamic Output Current VIN=VCC or GND ICC Maximum 5.5 8.0 80 Quiescent Supply Current (per Package) * All outputs loaded; thresholds on input associated with output under test. +Maximum test duration 2.0 ms, one output loaded at a time. 3 Unit V V V V µA mA µA mA mA µA IN74ACT640 AC ELECTRICAL CHARACTERISTICS(VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=3.0 ns) Guaranteed Limits Unit Symbol Parameter 25 °C -40°C to 85°C Min Max Min Max tPLH Propagation Delay, A to B or B to A 1.5 1.5 1.0 8.5 ns (Figure 1) tPHL Propagation Delay, A to B or B to A 1.5 8.0 1.0 9.0 ns (Figure 1) tPZH Propagation Delay,Direction or Output 1.5 10.0 1.0 11.0 ns Enable to A or B (Figure 2) tPZL Propagation Delay,Direction or Output 1.5 10.0 1.0 11.0 ns Enable to A or B (Figure 2) tPHZ Propagation Delay,Direction or Output 1.5 10.0 1.0 11.0 ns Enable to A or B (Figure 2) tPLZ Propagation Delay,Direction or Output 1.5 10.0 1.0 11.0 ns Enable to A or B (Figure 2) CIN Maximum Input Capacitance 4.5 4.5 pF COUT Maximum Three-State I/O Capacitance 15 15 pF (Output in High-Impedance State) CPD Typical @25°C,VCC=5.0 V 45 Power Dissipation Capacitance Figure 1. Switching Waveforms Figure 2. Switching Waveforms 4 pF IN74ACT640 EXPANDED LOGIC DIAGRAM 5