INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD65R660CFD,IIPD65R660CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.66Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pulsed 17 A PD Total Dissipation @TC=25℃ 63 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 2 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD65R660CFD,IIPD65R660CFD ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 650 VGS(th) Gate Threshold Voltage VDS=VGS; ID=210μA 3.5 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 4.5 V VGS=10V; ID=2.1A 0.66 Ω Gate-Source Leakage Current VGS= 20V;VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V 5 μA VSD Diode forward voltage IF=3.2A, VGS = 0V isc website：www.iscsemi.cn 2 0.9 V isc & iscsemi is registered trademark